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21. 发明申请

US20060282814A1 Method for verifying and choosing lithography model 有权
公开(公告)号：US20060282814A1
公开(公告)日：2006-12-14
申请号：US11141805
申请日：2005-05-31
申请人： Gokhan Percin , Ram Ramanujam , Franz Zach
发明人： Gokhan Percin , Ram Ramanujam , Franz Zach
IPC分类号： G06F17/50
CPC分类号： G03F7/70616 , G03F7/705 , G03F7/70516
摘要： A test mask with both verification structures and calibration structures is provided to enable the formation of an image of at least one verification structure and at least one calibration structure at a plurality of different test site locations under different dose and defocus conditions to allow the calibration structures to be measured and to obtain at least one computational model for optical proximity correction purposes.

22. 发明申请

US20060268254A1 Method for measuring and verifying stepper illumination 有权
标题翻译：步进照明的测量和验证方法
公开(公告)号：US20060268254A1
公开(公告)日：2006-11-30
申请号：US11141803
申请日：2005-05-31
申请人： Gokhan Percin , Abdurrahman Sezginer , Franz Zach
发明人： Gokhan Percin , Abdurrahman Sezginer , Franz Zach
IPC分类号： G03B27/72
CPC分类号： G03F7/7025 , G03F7/70591
摘要： An apparatus and method for characterizing an illumination pupil of an exposure tool comprises forming a plurality of pinhole test patterns at a plurality of test site locations to facilitate locating test pattern edges for extracting therefrom the illumination pupil characteristics of the exposure tool.
摘要翻译：用于表征曝光工具的照明光瞳的装置和方法包括在多个测试位置处形成多个针孔测试图案，以便于定位测试图案边缘以从其中提取曝光工具的照明光瞳特性。

23. 发明授权

US07277165B2 Method of characterizing flare 有权
标题翻译：表征火炬的方法
公开(公告)号：US07277165B2
公开(公告)日：2007-10-02
申请号：US10860853
申请日：2004-06-04
申请人： Bo Wu , Abdurrahman Sezginer
发明人： Bo Wu , Abdurrahman Sezginer
IPC分类号： G01N21/00
CPC分类号： G03F7/70941 , G03F1/44 , G03F7/70591
摘要： A method of measuring flare in an optical lithographic system utilizes an exposure mask with first and second discrete opaque features each having rotational symmetry of order greater than four and of different respective areas. The exposure mask is positioned in the lithographic system such that actinic radiation emitted by the lithographic system illuminates the sensitive surface of an exposure target through the exposure mask. The extent to which regions of the sensitive surface that are within the geometric image of a feature of the exposure mask are exposed to actinic radiation during due to flare is measured.
摘要翻译：一种在光学平版印刷系统中测量光斑的方法利用具有第一和第二离散不透明特征的曝光掩模，每个不透明特征具有大于四的旋转对称性以及不同的相应区域。曝光掩模位于光刻系统中，使得由光刻系统发射的光化辐射通过曝光掩模照射曝光目标的敏感表面。测量在曝光掩模的特征的几何图像内的敏感表面的区域在由于耀斑期间暴露于光化辐射的程度。

24. 发明授权

US07266800B2 Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes 有权
标题翻译：用于设计可制造图案的方法和系统，其描述了图案化工艺的图案和位置依赖性质
公开(公告)号：US07266800B2
公开(公告)日：2007-09-04
申请号：US10861170
申请日：2004-06-04
申请人： Abdurrahman Sezginer
发明人： Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F7/70425 , G03F7/705 , G06F17/50 , G06F2217/12 , Y02P90/265
摘要： Computational models of a patterning process are described. Any one of these computational models can be implemented as computer-readable program code embodied in computer-readable media. The embodiments described herein explain techniques that can be used to adjust parameters of these models according to measurements, as well as how predictions made from these models can be used to correct lithography data. Corrected lithography data can be used to manufacture a device, such as an integrated circuit.
摘要翻译：描述了图案化过程的计算模型。这些计算模型中的任何一个可以被实现为体现在计算机可读介质中的计算机可读程序代码。这里描述的实施例解释了可以用于根据测量来调整这些模型的参数的技术，以及如何使用这些模型做出的预测来校正光刻数据。校正的光刻数据可用于制造诸如集成电路的器件。

25. 发明授权

US07246343B2 Method for correcting position-dependent distortions in patterning of integrated circuits 有权
标题翻译：用于校正集成电路图案化中的位置相关失真的方法
公开(公告)号：US07246343B2
公开(公告)日：2007-07-17
申请号：US10933192
申请日：2004-09-01
申请人： Devendra Joshi , Abdurrahman Sezginer , Franz X. Zach
发明人： Devendra Joshi , Abdurrahman Sezginer , Franz X. Zach
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.
摘要翻译：公开了一种用于减少对光刻应用位置相关校正所需的计算时间的方法和系统，通常是屏蔽数据。通常在广泛分离的位置处对重复的簇或对象的几个实例确定光学邻近度或过程校正，然后基于它们在曝光区域中的位置将校正内插到重复簇的其他实例。或者，可以将光学邻近校正应用于不同的闪光强度值的对象的重复簇或者图案化缺陷的另一参数，例如通过计算重复簇的每个实例的位置处的闪光的值，以及内插光学接近度校正到这些闪光值。

26. 发明申请

US20060248497A1 Apparatus and method for compensating a lithography projection tool 有权
公开(公告)号：US20060248497A1
公开(公告)日：2006-11-02
申请号：US11203329
申请日：2005-08-13
申请人： Hsu-Ting Huang , Abdurrahman Sezginer
发明人： Hsu-Ting Huang , Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/44
摘要： An apparatus and method of compensating for lens imperfections in a projection lithography tool, includes extracting from a diffraction image created by the projection lithography tool a lens transmittance function, and then using the extracted lens transmittance function as a compensator in the lithography projection tool. Another preferred apparatus and method of synthesizing a photomask pattern includes obtaining a phase and an amplitude of a transmittance function of an imaging system; forming a computational model of patterning that includes the transmittance function of the imaging system; and then synthesizing a mask pattern from a given target pattern, by minimizing differences between the target pattern and another pattern that the computational model predicts the synthesized mask pattern will form on a wafer.

27. 发明申请

US20060236271A1 Optical lithography correction process 有权
标题翻译：光学光刻校正过程
公开(公告)号：US20060236271A1
公开(公告)日：2006-10-19
申请号：US11101872
申请日：2005-04-09
申请人： Franz Zach
发明人： Franz Zach
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G06F2217/12 , Y02P90/265 , Y10S977/834
摘要： A apparatus and method for correcting a process critical layout includes characterizing the influence of individual ones of a set of worst case process variations on a simulated nano-circuit layout design and then correcting layout geometries in the simulated nano-circuit layout based on such characterizations.
摘要翻译：用于校正过程关键布局的装置和方法包括表征一组最坏情况处理变化中的各个对模拟纳米电路布局设计的影响，然后基于这种表征来校正模拟纳米电路布局中的布局几何形状。

28. 发明申请

US20060228041A1 Optical lithography verification process 有权
标题翻译：光刻光刻验证过程
公开(公告)号：US20060228041A1
公开(公告)日：2006-10-12
申请号：US11102206
申请日：2005-04-09
申请人： Devendra Joshi
发明人： Devendra Joshi
IPC分类号： G06K9/40
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： An apparatus and method for optical lithography verification includes filtering a lithography simulation of proposed sub-lightwave pattern formations during at least one design phase or manufacturing phase of an article of manufacture having sub-lightwave structures and then detecting design phase or manufacturing phase defects in response to the filtering of the lithography simulation.
摘要翻译：用于光学光刻验证的装置和方法包括在具有亚光波结构的制品的至少一个设计阶段或制造阶段过滤提出的亚光波形图形的光刻模拟，然后检测响应中的设计阶段或制造阶段缺陷对光刻模拟的滤波。

29. 发明申请

US20060075371A1 Method and system for semiconductor design hierarchy analysis and transformation 有权
公开(公告)号：US20060075371A1
公开(公告)日：2006-04-06
申请号：US10955067
申请日：2004-09-30
申请人： Vishnu Kamat
发明人： Vishnu Kamat
IPC分类号： G06F17/50 , G06F9/455
CPC分类号： G06F17/5068
摘要： A method and apparatus for partitioning of the input design into repeating patterns called template cores for the application of reticle enhancement methods, design verification for manufacturability and design corrections for optical and process effects is accomplished by hierarchy analysis to extract cell overlap information. Also hierarchy analysis is performed to extract hierarchy statistics. Finally template core candidates are identified. This allows to the design to be made amenable for design corrections or other analyses or modifications that are able to leverage the hierarchy of the design since the cell hierarchy could otherwise be very deep or cells could have significant overlap with each other.

30. 发明申请

US20060048091A1 Method for correcting position-dependent distortions in patterning of integrated circuits 有权
标题翻译：用于校正集成电路图案化中的位置相关失真的方法
公开(公告)号：US20060048091A1
公开(公告)日：2006-03-02
申请号：US10933192
申请日：2004-09-01
申请人： Devendra Joshi , Abdurrahman Sezginer , Franz Zach
发明人： Devendra Joshi , Abdurrahman Sezginer , Franz Zach
IPC分类号： G06F17/50 , G03F1/00 , G21K5/00
CPC分类号： G03F1/36
摘要： A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.
摘要翻译：公开了一种用于减少对光刻应用位置相关校正所需的计算时间的方法和系统，通常是屏蔽数据。通常在广泛分离的位置处对重复的簇或对象的几个实例确定光学邻近度或过程校正，然后基于它们在曝光区域中的位置将校正内插到重复簇的其他实例。或者，可以将光学邻近校正应用于不同的闪光强度值的对象的重复簇或者图案化缺陷的另一参数，例如通过计算重复簇的每个实例的位置处的闪光的值，以及内插光学接近度校正到这些闪光值。

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