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21. 发明授权

US08075800B2 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US08075800B2
公开(公告)日：2011-12-13
申请号：US10558406
申请日：2004-05-28
申请人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
发明人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
IPC分类号： C09K13/00 , H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1454
摘要： A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.
摘要翻译：一种抛光浆料，其含有在其中的介质中分散四价金属氢氧化物颗粒的浆料和添加剂，其特征在于，添加剂是含有选自由通式（I）表示的单体组中的至少一种单体组分的聚合物，和（II）（在通式（I）和（II）中，R 1表示氢，甲基，苯基，苯偶酰基，氯基，二氟甲基，三氟甲基或氰基， R2和R3表示氢或碳原子数1〜18的烷基链，羟甲基，乙酰基或二丙酰基，不包括氢的情况，R4表示吗啉代基，硫代吗啉基，吡咯烷基或哌啶子基）。本发明提供了一种抛光浆料，其中颗粒形成具有待除去的抛光膜的化学反应层，其具有非常小的颗粒的机械作用并通过pa机械去除 d没有划痕，添加剂实现了高平面性。

22. 发明申请

US20110275285A1 POLISHING SOLUTION FOR CMP AND POLISHING METHOD USING THE POLISHING SOLUTION 有权
标题翻译：使用抛光溶液的CMP抛光方法的抛光方案
公开(公告)号：US20110275285A1
公开(公告)日：2011-11-10
申请号：US13139117
申请日：2011-06-10
申请人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
发明人： Eiichi Satou , Munehiro Oota , Kanshi Chinone , Shigeru Nobe , Kazuhiro Enomoto , Tadahiro Kimura , Masato Fukasawa , Masanobu Habiro , Yousuke Hoshi
IPC分类号： B24B1/00 , C09G1/02
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The polishing solution for CMP according to the invention comprises abrasive grains, an additive and water, and the polishing solution comprises an organic compound satisfying specified conditions as the additive. The polishing method of the invention is for polishing of a substrate having a silicon oxide film on the surface, and the polishing method comprises a step of polishing the silicon oxide film with a polishing pad while supplying the polishing solution for CMP between the silicon oxide film and the polishing pad.
摘要翻译：根据本发明的用于CMP的抛光溶液包括磨粒，添加剂和水，并且抛光溶液包含满足特定条件的添加剂的有机化合物。本发明的抛光方法是用于在表面上抛光具有氧化硅膜的基板，并且抛光方法包括用抛光垫抛光氧化硅膜的步骤，同时在氧化硅膜之间提供用于CMP的抛光溶液和抛光垫。

23. 发明申请

US20110009033A1 POLISHING SLURRY FOR METAL FILMS AND POLISHING METHOD 有权
标题翻译：金属膜抛光浆和抛光方法
公开(公告)号：US20110009033A1
公开(公告)日：2011-01-13
申请号：US12667154
申请日：2008-07-04
申请人： Takaaki Tanaka , Masato Fukasawa , Shigeru Nobe , Takafumi Sakurada , Takashi Shinoda
发明人： Takaaki Tanaka , Masato Fukasawa , Shigeru Nobe , Takafumi Sakurada , Takashi Shinoda
IPC分类号： B24B1/00 , C09K13/00
CPC分类号： H01L21/7684 , C09G1/02 , H01L21/3212 , H01L21/76819
摘要： Provided are a polishing slurry for metal films and a polishing method which restrain the generation of erosion and seams, and makes the flatness of a surface polished therewith or thereby high. The slurry and the method are a polishing slurry, for metal films, comprising abrasive grains, a methacrylic acid based polymer and water, and a polishing method using the slurry, respectively.
摘要翻译：提供了用于金属膜的抛光浆料和抑制侵蚀和接缝的产生的抛光方法，并且使得用其抛光的表面的平坦度或因此高。浆料和方法是研磨浆料，对于包含磨料颗粒，甲基丙烯酸类聚合物和水的金属膜和分别使用该浆料的抛光方法。

24. 发明授权

US07838482B2 CMP polishing compound and polishing method 有权
标题翻译： CMP抛光剂和抛光方法
公开(公告)号：US07838482B2
公开(公告)日：2010-11-23
申请号：US10544073
申请日：2004-01-30
申请人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
发明人： Masato Fukasawa , Masato Yoshida , Naoyuki Koyama , Yuto Ootsuki , Chiaki Yamagishi , Kazuhiro Enomoto , Kouji Haga , Yasushi Kurata
IPC分类号： C11D7/02 , C11D7/26 , C11D7/32
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1409 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films.
摘要翻译：本发明涉及一种包括氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中水溶性聚合物是具有任意一种N-单取代产物的骨架的化合物和选自丙烯酰胺，甲基丙烯酰胺及其α-取代产物的任意一种的N，N-二取代的产物。对于100重量份的研磨浆料，水溶性聚合物的量优选为0.01重量份以上且10重量份以下。因此，可以提供可以有效地快速地研磨由氧化硅等制成的膜的抛光浆料和抛光方法，并且在用于使层间绝缘膜，BPSG的平坦化的CMP技术中容易地进一步控制其工艺薄膜，用于浅沟槽隔离的绝缘膜，以及其他薄膜。

25. 发明申请

US20090156007A1 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20090156007A1
公开(公告)日：2009-06-18
申请号：US12320752
申请日：2009-02-04
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

26. 发明申请

US20070218811A1 CMP POLISHING SLURRY AND METHOD OF POLISHING SUBSTRATE 审中-公开
标题翻译： CMP抛光浆料和抛光底材的方法
公开(公告)号：US20070218811A1
公开(公告)日：2007-09-20
申请号：US11576010
申请日：2005-09-25
申请人： Yasushi Kurata , Kazuhiro Enomoto , Naoyuki Koyama , Masato Fukasawa
发明人： Yasushi Kurata , Kazuhiro Enomoto , Naoyuki Koyama , Masato Fukasawa
IPC分类号： C09G1/00
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053
摘要： A CMP polishing slurry of the present invention, contains cerium oxide particles, a dispersant, a polycarboxylic acid, a strong acid having a pKa of its first dissociable acidic group at 3.2 or less, and water, the pH of the polishing slurry is 4.0 or more and 7.5 or less, wherein the strong acid is contained 100 to 1,000 ppm or 50 to 1,000 ppm, or the strong acid is a monovalent strong acid contained 50 to 500 ppm or is a bivalent strong acid contained 100 to 1,000 ppm. The preferable polycarboxylic acid is a polyacrylic acid. The present invention allows polishing in the CMP methods of surface-smoothening an interlayer dielectric film, a BPSG film and a shallow-trench-isolation insulation film with high speed operation efficiently and easier process management and cause smaller fluctuation in film thickness due to difference in pattern density.
摘要翻译：本发明的CMP抛光浆料含有氧化铈颗粒，分散剂，多元羧酸，其第一离解酸性基团的pKa为3.2以下的强酸和水，研磨浆料的pH为4.0或更优选为7.5以下，其中强酸含量为100〜1000ppm或50〜1000ppm，强酸为50〜500ppm的一价强酸，或二价强酸为100〜1000ppm。优选的多元羧酸是聚丙烯酸。本发明允许在CMP方法中对具有高速操作的层间电介质膜，BPSG膜和浅沟槽隔离绝缘膜的表面平滑化进行抛光，从而有效地且更容易地进行工艺管理，并且由于差异导致膜厚度的变动较小图案密度。

27. 发明申请

US20060289826A1 Hazardous substance decomposer and process for producing the same 有权
标题翻译：有害物质分解器及其生产方法
公开(公告)号：US20060289826A1
公开(公告)日：2006-12-28
申请号：US10558406
申请日：2004-05-28
申请人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
发明人： Naoyuki Koyama , Youichi Machii , Masato Yoshida , Masato Fukasawa , Toranosuke Ashizawa
IPC分类号： C09K13/00 , H01L21/461 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1454
摘要： A polishing slurry containing a slurry dispersing particles of tetravalent metal hydroxide in a medium therein and an additive, characterized in that the additive is a polymer containing at least one kind of monomer component selected from a group of monomers represented with a general formulae (I) and (II) below (In the general formulae (I) and (II), R1 denotes hydrogen, a methyl group, a phenyl group, a benzil group, a chlorine group, a difluoromethyl group, a trifluoromethyl group or a cyano group, R2 and R3 denote hydrogen or an alkyl chain having 1 to 18 carbon atoms, a methylol group, an acetyl group or a diacetonyl group, and a case where both are hydrogen is not included. R4 denotes a morpholino group, a thiomorpholino group, a pyrrolidinyl group or a piperidino group.) The invention provides a polishing slurry in which particles form a chemical reaction layer with a polishing film to be removed with a very small mechanical action of the particles and mechanical removal by a pad without scratches and the additive realizes high planarity.
摘要翻译：一种抛光浆料，其含有在其中的介质中分散四价金属氢氧化物颗粒的浆料和添加剂，其特征在于，添加剂是含有选自由通式（I）表示的单体组中的至少一种单体组分的聚合物，和（II）（在通式（I）和（II）中，R 1表示氢，甲基，苯基，苯偶酰基，氯基，二氟甲基，三氟甲基或氰基，R 2和R 3表示氢或具有1至18个碳原子的烷基链，羟甲基，乙酰基或二丙酰基并且不包括氢的情况，R 4表示吗啉代基，硫代吗啉代基，吡咯烷基或哌啶子基）。本发明提供了一种研磨浆料，其中颗粒形成具有用非常小的机械作用除去的抛光膜的化学反应层颗粒和通过垫没有划痕的机械去除和添加剂实现高平坦度。

28. 发明授权

US09293344B2 Cmp polishing slurry and method of polishing substrate 有权
标题翻译： CMP抛光浆料和抛光底物的方法
公开(公告)号：US09293344B2
公开(公告)日：2016-03-22
申请号：US11572523
申请日：2005-07-20
申请人： Masato Fukasawa , Naoyuki Koyama , Yasushi Kurata , Kouji Haga , Toshiaki Akutsu , Yuuto Ootsuki
发明人： Masato Fukasawa , Naoyuki Koyama , Yasushi Kurata , Kouji Haga , Toshiaki Akutsu , Yuuto Ootsuki
IPC分类号： C09K13/00 , B24B1/00 , H01L21/3105 , C09G1/02 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： The present invention relates to a CMP polishing slurry comprising cerium oxide particles, a dispersant, a water-soluble polymer and water, wherein the water-soluble polymer is a polymer obtained in polymerization of a monomer containing at least one of a carboxylic acid having an unsaturated double bond and the salt thereof by using at least one of a cationic azo compound and the salt thereof as a polymerization initiator. The present invention provides a polishing slurry and a polishing method allowing polishing efficiently uniformly at high speed without scratch and also allowing easy process management in the CMP technology of smoothening an interlayer dielectric film, BPSG film, and insulation film for shallow trench isolation.
摘要翻译：本发明涉及包含氧化铈颗粒，分散剂，水溶性聚合物和水的CMP抛光浆料，其中所述水溶性聚合物是在含有至少一种具有不饱和双键及其盐通过使用阳离子偶氮化合物及其盐中的至少一种作为聚合引发剂。本发明提供一种研磨浆料和抛光方法，其能够高速均匀地进行抛光而无划伤，并且还能够使用CMP层叠电介质膜，BPSG膜和用于浅沟槽隔离的绝缘膜的CMP技术进行简单的处理管理。

29. 发明申请

US20120064721A1 POLISHING SLURRY AND POLISHING METHOD 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US20120064721A1
公开(公告)日：2012-03-15
申请号：US13299699
申请日：2011-11-18
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/304
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

30. 发明授权

US08084363B2 Polishing slurry and polishing method 有权
标题翻译：抛光浆和抛光方法
公开(公告)号：US08084363B2
公开(公告)日：2011-12-27
申请号：US12320752
申请日：2009-02-04
申请人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
发明人： Jin Amanokura , Takafumi Sakurada , Sou Anzai , Masato Fukasawa , Shouichi Sasaki
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1436 , C09K3/1463
摘要： The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.
摘要翻译：本发明涉及用于形成半导体器件布线的工艺中的抛光用抛光浆料和抛光方法等。提供抛光浆料，即使抛光表面由两种或更多种物质制成，并且还能够抑制抛光后的金属残留和划痕，并且使用这种方法进行化学机械抛光，从而提供具有高平整度的抛光表面。本发明的研磨浆是研磨含有表面活性剂和有机溶剂中的至少一种，金属氧化物溶解剂和水的研磨浆料，或含有表面经烷基改性的水和研磨剂的研磨浆料，优选地，其还含有金属氧化剂，水溶性聚合物和金属抑制剂。

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