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21. 发明授权

US08338827B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08338827B2
公开(公告)日：2012-12-25
申请号：US12612021
申请日：2009-11-04
申请人： Shunpei Yamazaki , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
发明人： Shunpei Yamazaki , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
IPC分类号： H01L29/10
CPC分类号： H01L29/66742 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , H01L27/1225 , H01L29/66969 , H01L29/78618 , H01L29/7869
摘要： In a thin film transistor which uses an oxide semiconductor, buffer layers containing indium, gallium, zinc, oxygen, and nitrogen are provided between the oxide semiconductor layer and the source and drain electrode layers.
摘要翻译：在使用氧化物半导体的薄膜晶体管中，在氧化物半导体层和源极和漏极电极层之间设置包含铟，镓，锌，氧和氮的缓冲层。

22. 发明授权

US08338226B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08338226B2
公开(公告)日：2012-12-25
申请号：US12748520
申请日：2010-03-29
申请人： Yuji Asano , Junichi Koezuka
发明人： Yuji Asano , Junichi Koezuka
IPC分类号： H01L21/20
CPC分类号： H01L29/7869 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , H01L27/1225 , H01L29/66969 , H01L29/78618
摘要： An object is to provide a thin film transistor including an oxide semiconductor layer, in which the contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and whose electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. The thin film transistor including an oxide semiconductor layer is formed in such a manner that buffer layers whose conductivity is higher than that of the oxide semiconductor layer are formed and the oxide semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layers. In addition, the buffer layers whose conductivity is higher than that of the oxide semiconductor layer are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere.
摘要翻译：目的是提供一种薄膜晶体管，其包括氧化物半导体层，其中氧化物半导体层与源极和漏极电极层之间的接触电阻降低并且其电特性稳定。另一个目的是提供制造薄膜晶体管的方法。包括氧化物半导体层的薄膜晶体管形成为形成电导率高于氧化物半导体层的缓冲层的方式，并且氧化物半导体层和源极和漏极电极层通过缓冲层。此外，在氮气气氛中对导电率高于氧化物半导体层的缓冲层进行反溅射处理和热处理。

23. 发明申请

US20070048890A1 Semiconductor device fabrication method and semiconductor device 失效
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20070048890A1
公开(公告)日：2007-03-01
申请号：US11327483
申请日：2006-01-09
申请人： Yuji Asano , Morio Kato
发明人： Yuji Asano , Morio Kato
IPC分类号： H01L21/00
CPC分类号： H01L31/0216
摘要： A semiconductor device fabrication method in which when a semiconductor device with a built-in light receiving element is fabricated, a section for dividing the light receiving element is protected from damage caused by, for example, etching. An antireflection coating is formed not only on a light receiving area in a divided photodiode area but on a division area including a junction area between a division section outside the light receiving area for dividing a photodiode and a cathode. A polycrystalline silicon film is formed so as to cover the antireflection coating. Accordingly, the antireflection coating on the junction area between the division section outside the light receiving area and the cathode is protected against, for example, etching by the polycrystalline silicon film. As a result, the appearance of a crystal defect, a change in impurity concentration, or the like is suppressed in this area. Therefore, a high-performance high-quality semiconductor device with a built-in photodiode can be fabricated.
摘要翻译：一种半导体器件制造方法，其中当制造具有内置光接收元件的半导体器件时，用于分割光接收元件的部分被保护免受例如蚀刻引起的损坏。防反射涂层不仅形成在分光电二极管区域的光接收区域上，而且形成在包含用于分割光电二极管的光接收区域外的分割部分与阴极之间的接合区域的分割区域上。形成多晶硅膜以覆盖抗反射涂层。因此，防止在光接收区域外的分割部分与阴极之间的接合区域上的抗反射涂层被防止例如多晶硅膜的蚀刻。结果，在该区域中抑制了晶体缺陷的出现，杂质浓度的变化等。因此，可以制造具有内置光电二极管的高性能高品质半导体器件。

24. 发明授权

US5532840A Facsimile machine 失效
标题翻译：传真机
公开(公告)号：US5532840A
公开(公告)日：1996-07-02
申请号：US171420
申请日：1993-12-22
申请人： Yuji Asano , Wataru Tomida
发明人： Yuji Asano , Wataru Tomida
IPC分类号： G11C29/00 , H04N1/32 , H04N1/327 , H04N1/21
CPC分类号： G11C29/88 , H04N1/32363 , H04N1/32379 , H04N1/32704 , H04N1/32708 , H04N1/3271 , H04N1/32719 , H04N1/32723 , H04N1/32728 , H04N1/32732
摘要： In this facsimile machine, it is determined whether data to be stored in a RAM is image data, and, if the data is image data, a normal cluster for writing the image data into is ensured. If the data is not image data, a defective cluster is selected, and the data is written into the defective cluster. In this case, if no defective cluster is selected, a normal cluster is selected, and the data is written into the normal cluster. Upon termination of the data writing operation, the data is managed on a classification (kind) basis. Accordingly, a facsimile machine is provided that is low in price and can easily carry out individual management for preservation of data while maintaining preservation (storage) quality of data even when a semiconductor memory that is not guaranteed in quality is used as the storage medium for the data.
摘要翻译：在该传真机中，确定要存储在RAM中的数据是否是图像数据，并且如果数据是图像数据，则确保了用于写入图像数据的正常集群。如果数据不是图像数据，则选择有缺陷的簇，并将数据写入缺陷簇。在这种情况下，如果没有选择有缺陷的集群，则选择正常集群，并将数据写入正常集群。在数据写入操作终止时，以分类（种类）为基础来管理数据。因此，提供廉价的传真机，并且即使当质量不保证的半导体存储器被用作存储介质时，也可以容易地进行用于数据保存的个体管理，同时保持数据的保存（存储）质量数据。

25. 发明授权

US4982225A Image forming apparatus for controlling the humidity and operating parameters associated with an image forming process 失效
标题翻译：用于控制与图像形成处理相关联的湿度和操作参数的图像形成装置
公开(公告)号：US4982225A
公开(公告)日：1991-01-01
申请号：US471800
申请日：1990-01-29
申请人： Kenji Sakakibara , Yuji Asano
发明人： Kenji Sakakibara , Yuji Asano
IPC分类号： G03D13/00 , G03B27/32 , G03F7/00 , G03G21/20
CPC分类号： G03F7/0022 , G03B27/32 , G03G21/203 , G03B2227/325
摘要： An image forming apparatus including an image forming device for forming an image on a photosensitive recording medium is disclosed. The image forming device forms the image in accordance with at least one operating parameter. A humidity detecting sensor detects an ambient humidity in the apparatus. A heater changes a relative humidity in the apparatus. A controller controls the heater in accordance with the sensed humidity and optimizes the at least one operating parameter at a temperature changed by the heater.
摘要翻译：公开了一种图像形成装置，包括用于在感光记录介质上形成图像的图像形成装置。图像形成装置根据至少一个操作参数形成图像。湿度检测传感器检测装置中的环境湿度。加热器改变设备中的相对湿度。控制器根据感测到的湿度来控制加热器，并且在由加热器改变的温度下优化至少一个操作参数。

26. 发明授权

US4905036A Image forming process and system, including heating step or device for increased density of images 失效
标题翻译：图像形成过程和系统，包括加热步骤或增加图像密度的设备
公开(公告)号：US4905036A
公开(公告)日：1990-02-27
申请号：US112217
申请日：1987-10-26
申请人： Yuji Asano , Jun Sakai , Yumio Matsumoto , Osamu Takagi , Akira Sago , Kiyoharu Hayakawa , Masashi Ueda , Yukichi Sawaki , Keiko Suzuki
发明人： Yuji Asano , Jun Sakai , Yumio Matsumoto , Osamu Takagi , Akira Sago , Kiyoharu Hayakawa , Masashi Ueda , Yukichi Sawaki , Keiko Suzuki
IPC分类号： G03B27/32 , G03F7/00 , G03B27/52
CPC分类号： G03F7/002 , G03B27/32 , G03B2227/325
摘要： A process and system for forming images on a recording sheet, according to source image information as provided on an original, wherein a pressure-sensitive photosensitive sheet is image-wise exposed to a radiation, to form thereon latent images corresponding to the source image information, and a pressure is applied to the image-wise exposed photosensitive sheet, to cause a chemical reaction and thereby develop the latent images into visible images on the recording sheet. The thus pressurized recording sheet is heated so that the chemical reaction is promoted to thereby increase a density of the visible images.
摘要翻译：根据原稿上提供的源图像信息，在记录片材上形成图像的方法和系统，其中压敏感光片被成像地暴露于辐射，以在其上形成与源图像信息对应的潜像并且对图像曝光的感光片施加压力，引起化学反应，从而将潜像显影成记录片材上的可见图像。加热这样加压的记录纸，从而促进化学反应，从而增加可见图像的浓度。

27. 发明授权

US4806984A Color-tone controlling method and apparatus therefor 失效
标题翻译：色调控制方法及其装置
公开(公告)号：US4806984A
公开(公告)日：1989-02-21
申请号：US154235
申请日：1988-02-10
申请人： Yuji Asano
发明人： Yuji Asano
IPC分类号： G03B27/73 , G03C7/00 , G03F7/00 , G03B27/32 , G03B27/52
CPC分类号： G03F7/002 , G03C7/00 , G03B2227/325
摘要： Disclosed is a color-tone controlling method and apparatus therefor, in which a desirably selected one of a plurality of color-tone plates of various colors such as red, green, blue, and so on is put onto a back surface of a color photosensitive medium, so that when a front surface of the color photosensitive medium is exposed to image carrying light, a part of light transmitted through the color photosensitive medium of the same color as that of the color-tone plate is reflected on the color-tone plate so as to re-expose the back surface of the color photosensitive medium.
摘要翻译：公开了一种色调控制方法及其设备，其中将各种颜色的多个色调板（例如红色，绿色，蓝色等）中期望选择的一个色调板放置在彩色感光体的背面上介质，使得当彩色光敏介质的前表面暴露于承载光的图像时，透过与色调板相同颜色的彩色感光介质透射的光的一部分在色调板上反射以便重新曝光彩色光敏介质的背面。

28. 发明授权

US08378393B2 Conductive oxynitride and method for manufacturing conductive oxynitride film 有权
标题翻译：导电氮氧化物及其制造方法
公开(公告)号：US08378393B2
公开(公告)日：2013-02-19
申请号：US12609032
申请日：2009-10-30
申请人： Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
发明人： Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
IPC分类号： H01L29/78
CPC分类号： C23C14/5846 , C04B35/58 , C04B2235/3284 , C04B2235/3286 , C23C14/0057 , C23C14/0676 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： An electrode formed using a transparent conductive oxide is likely to be crystallized by heat treatment performed in the manufacturing process of a semiconductor device. In the case of a thin film element using an electrode having a significantly uneven surface due to crystallization, a short circuit is likely to occur and thus reliability of the element is degraded. An object is to provide a light-transmitting conductive oxynitride which is not crystallized even if subjected to heat treatment and a manufacturing method thereof. It is found that an oxynitride containing indium, gallium, and zinc, to which hydrogen atoms are added as impurities, is a light-transmitting conductive film which is not crystallized even if heated at 350° C. and the object is achieved.
摘要翻译：使用透明导电氧化物形成的电极可能通过在半导体器件的制造过程中进行的热处理而结晶化。在使用由于结晶而具有显着不平坦表面的电极的薄膜元件的情况下，可能发生短路，因此元件的可靠性降低。本发明的目的是提供即使经受热处理也不结晶的透光导电氮氧化物及其制造方法。发现含有氢原子作为杂质的含有铟，镓和锌的氮氧化物是透光性导电膜，即使在350℃下加热也不会结晶，实现了目的。

29. 发明申请

US20070254398A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20070254398A1
公开(公告)日：2007-11-01
申请号：US11528536
申请日：2006-09-28
申请人： Toshihiro Wakabayashi , Takao Setoyama , Yuji Asano , Akio Igarashi
发明人： Toshihiro Wakabayashi , Takao Setoyama , Yuji Asano , Akio Igarashi
IPC分类号： H01L21/425
CPC分类号： H01L21/8249 , H01L27/0635 , H01L27/1443 , H01L31/102 , H01L31/18
摘要： A method of manufacturing a high-speed operable and broadband operable semiconductor device where a light-receiving element section, a CMOS element and a bipolar transistor element having a double polysilicon structure are formed on one chip. By performing the same conductivity type ion implantation, the same conductivity type diffusion layers (examples thereof include N-type diffusion layers, an anode diffusion layer, P-type well diffusion layer and collector diffusion layer as P-type diffusion layers, a cathode diffusion layer and collector contact diffusion layer as N-type diffusion layers, a source/drain diffusion layer and base Poly-Si diffusion layer as N-type diffusion layers, and a source/drain diffusion layer and base Poly-Si diffusion layer as P-type diffusion layers) are simultaneously formed in two or more regions among a light-receiving element region, CMOS element region and bipolar transistor element region of a semiconductor substrate or of an epitaxial layer over the semiconductor substrate.
摘要翻译：一种制造高速可操作和宽带可操作的半导体器件的方法，其中在一个芯片上形成具有双重多晶硅结构的光接收元件部分，CMOS元件和双极晶体管元件。通过进行相同的导电型离子注入，具有相同的导电型扩散层（其例子包括N型扩散层，阳极扩散层，P型阱扩散层和作为P型扩散层的集电极扩散层，阴极扩散作为N型扩散层的层和集电极接触扩散层，作为N型扩散层的源极/漏极扩散层和基底多晶硅扩散层，以及作为P-型扩散层的源极/漏极扩散层和基极多晶硅扩散层，类型扩散层）同时形成在半导体衬底的光接收元件区域，CMOS元件区域和双极晶体管元件区域或半导体衬底上的外延层的两个或更多个区域中。

30. 发明授权

US06846694B2 Semiconductor device with built-in light receiving element, production method thereof, and optical pickup incorporating the same 有权
标题翻译：具有内置光接收元件的半导体器件及其制造方法和包含该光接收元件的光学拾取器
公开(公告)号：US06846694B2
公开(公告)日：2005-01-25
申请号：US10384774
申请日：2003-03-11
申请人： Toshihiko Fukushima , Kazuhiro Natsuaki , Takao Setoyama , Yuji Asano , Morio Katou
发明人： Toshihiko Fukushima , Kazuhiro Natsuaki , Takao Setoyama , Yuji Asano , Morio Katou
IPC分类号： H01L27/14 , H01L21/00 , H01L21/8222 , H01L23/58 , H01L27/06 , H01L27/144 , H01L31/00 , H01L31/10 , H01L31/103 , H01L31/109 , H01L31/18
CPC分类号： H01L31/1804 , H01L27/1443 , H01L31/02161 , H01L31/103 , Y02E10/547 , Y02P70/521
摘要： A method for producing a semiconductor device with a built-in light receiving element is provided. The device comprises a light receiving element region for receiving and converting an optical signal to an electric signal, the light receiving element region being provided on a substrate. The method comprises the steps forming an anti-reflection film in the light receiving element region on the substrate, and forming a protection film, the protection film serving as an etch stop film in a subsequent etching step.
摘要翻译：提供一种具有内置光接收元件的半导体器件的制造方法。该装置包括用于接收光信号并将其转换为电信号的光接收元件区域，该光接收元件区域设置在基板上。该方法包括在基板上的光接收元件区域中形成抗反射膜的步骤，以及在随后的蚀刻步骤中形成保护膜，该保护膜用作蚀刻停止膜。

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