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21. 发明授权

US08184411B2 MTJ incorporating CoFe/Ni multilayer film with perpendicular magnetic anisotropy for MRAM application 有权
标题翻译： MTJ结合CoFe / Ni多层膜具有MRAM应用的垂直磁各向异性
公开(公告)号：US08184411B2
公开(公告)日：2012-05-22
申请号：US12589614
申请日：2009-10-26
申请人： Kunliang Zhang , Min Li , Pokang Wang , Yuchen Zhou , Cheng T. Horng , Ru-Ying Tong
发明人： Kunliang Zhang , Min Li , Pokang Wang , Yuchen Zhou , Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11B5/33
CPC分类号： G11B5/3153 , B82Y40/00 , C23C14/165 , G01R33/098 , G01R33/1284 , G11B5/1278 , G11B2005/0024 , H01F10/30 , H01F10/3259 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T156/10 , Y10T428/1107 , Y10T428/1114
摘要： A MTJ for a spintronic device is disclosed and includes a thin composite seed layer made of at least Ta and a metal layer having fcc(111) or hcp(001) texture as in Ta/Ti/Cu to enhance perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (CoFe/Ni)x, (Co/NiFe)x, (Co/NiCo)x, (CoFe/NiFe)x, or (CoFe/NiCo)x composition where x is from 5 to 30. In one embodiment, a CPP-TMR spin valve has one or both of a laminated free layer and laminated reference layer with the aforementioned compositions. The MTJ includes an interfacial layer made of CoFeB, CoFeB/CoFe, or CoFe/CoFeB between each laminated structure and the tunnel barrier. The laminated layers are deposited by a low power and high Ar pressure process to avoid damaging interfaces between adjoining layers. Annealing occurs at 220° C. to 400° C. A laminated layer with high PMA may also be included in one or more layers of a spin transfer oscillator.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括由至少Ta制成的薄复合种子层和具有如Ta / Ti / Cu中的fcc（111）或hcp（001）织构的金属层以增强垂直磁各向异性（PMA）在具有（CoFe / Ni）x，（Co / NiFe）x，（Co / NiCo）x，（CoFe / NiFe）x或（CoFe / NiCo）x）组合物的叠层层中，x为5〜在一个实施方案中，CPP-TMR自旋阀具有上述组成的层压自由层和层压参考层之一或两者。 MTJ包括在每个层压结构和隧道势垒之间由CoFeB，CoFeB / CoFe或CoFe / CoFeB制成的界面层。层压层通过低功率和高Ar压力过程沉积，以避免相邻层之间的界面损坏。在220℃至400℃发生退火。具有高PMA的叠层也可以包括在一个或多个自旋转移振荡器层中。

22. 发明申请

US20120113540A1 MODIFIED FIELD GENERATION LAYER FOR MICROWAVE ASSISTED MAGNETIC RECORDING 有权
标题翻译：用于微波辅助磁记录的修改场生成层
公开(公告)号：US20120113540A1
公开(公告)日：2012-05-10
申请号：US12927083
申请日：2010-11-05
申请人： Kunliang Zhang , Min Li , Yuchen Zhou
发明人： Kunliang Zhang , Min Li , Yuchen Zhou
IPC分类号： G11B5/02
CPC分类号： G11B5/1278 , G11B5/3133 , G11B2005/001 , G11B2005/0024
摘要： A spin torque oscillator is described in which the conventional Field Generation Layer (FGL) is replaced by a bilayer, one of whose members exhibits perpendicular magnetic anisotropy while the other exhibits conventional in-plane anisotropy. Provided the layer with the perpendicular anisotropy is the one that is closest to the spacer layer, the device is able to generate microwaves at current densities as low as 1×108 A/cm2.
摘要翻译：描述了一种自旋扭矩振荡器，其中常规的场产生层（FGL）由双层代替，其中一个构件呈现垂直的磁各向异性，而另一个表现出常规的面内各向异性。如果具有垂直各向异性的层是最接近间隔层的层，该器件能够产生低至1×108A / cm 2的电流密度的微波。

23. 发明申请

US20120038012A1 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US20120038012A1
公开(公告)日：2012-02-16
申请号：US13317485
申请日：2011-10-19
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1+10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1 + 10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

24. 发明申请

US20110318608A1 TMR device with novel pinned layer 审中-公开
标题翻译： TMR器件具有新颖的钉扎层
公开(公告)号：US20110318608A1
公开(公告)日：2011-12-29
申请号：US12803545
申请日：2010-06-29
申请人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
发明人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
IPC分类号： G11B5/39 , B05D5/00
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114
摘要： The invention discloses how the insertion of a layer of CoFeB serves to increase the robustness of an MTF device by smoothing the interface between the tunnel barrier and the pinned layer.
摘要翻译：本发明公开了如何通过平滑隧道势垒和被钉扎层之间的界面来增加CoFeB层的插入来增加MTF装置的鲁棒性。

25. 发明申请

US20110288015A1 Treatment of renal dysfunction and multiple myeloma using pacap compounds 有权
标题翻译：使用pacap化合物治疗肾功能障碍和多发性骨髓瘤
公开(公告)号：US20110288015A1
公开(公告)日：2011-11-24
申请号：US11632734
申请日：2005-07-21
申请人： Akira Arimura , Min Li
发明人： Akira Arimura , Min Li
IPC分类号： A61K38/16 , A61P3/10 , A61P9/12 , A61P13/12 , A61P35/00
CPC分类号： C07K14/57563 , A61K38/00
摘要： The present invention relates to methods and compositions for the treatment, management, or prevention of multiple myeloma and/or renal dysfunction in mammals. The methods of the invention comprise the administration of an effective amount of one or more pituitary adenylate cyclase activating polypeptide (“PACAP”) compounds, which includes PACAP, vasoactive intestinal peptide (“VIP”), their agonists, analogs, fragments, or derivatives, having one or more PACAP activities. The invention also provides pharmaceutical compositions comprising one or more PACAP compounds of the invention either alone or in combination with one or more other prophylactic/therapeutic agents useful in therapy for the treatment, management, or prevention of multiple myeloma and/or renal dysfunction.
摘要翻译：本发明涉及用于治疗，管理或预防哺乳动物多发性骨髓瘤和/或肾功能障碍的方法和组合物。本发明的方法包括施用有效量的一种或多种垂体腺苷酸环化酶活化多肽（“PACAP”）化合物，其包括PACAP，血管活性肠肽（“VIP”），其激动剂，类似物，片段或衍生物，具有一个或多个PACAP活动。本发明还提供包含本发明的一种或多种PACAP化合物的药物组合物，其单独或与一种或多种其它用于治疗，治疗或预防多发性骨髓瘤和/或肾功能障碍的预防/治疗剂组合。

26. 发明授权

US08064244B2 Thin seeded Co/Ni multilayer film with perpendicular anisotropy for spintronic device applications 有权
标题翻译：用于自旋电子器件应用的具有垂直各向异性的薄种子Co / Ni多层膜
公开(公告)号：US08064244B2
公开(公告)日：2011-11-22
申请号：US12456621
申请日：2009-06-19
申请人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Kenichiro Yamada , Katsuhiko Koui
发明人： Kunliang Zhang , Min Li , Yuchen Zhou , Soichi Oikawa , Kenichiro Yamada , Katsuhiko Koui
IPC分类号： G11C11/00
CPC分类号： G01R33/098 , G01R33/1284 , G11C11/161 , H01L43/08 , H01L43/10 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129 , Y10T428/1136 , Y10T428/1143
摘要： A spin valve structure for a spintronic device is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)x multilayer. The (Co/Ni)x multilayer is deposited by a low power and high Ar pressure process to avoid damaging Co/Ni interfaces and thereby preserving PMA. As a result, only a thin seed layer is required. PMA is maintained even after annealing at 220° C. for 10 hours. Examples of GMR and TMR spin valves are described and may be incorporated in spin transfer oscillators and spin transfer MRAMs. The free layer is preferably made of a FeCo alloy including at least one of Al, Ge, Si, Ga, B, C, Se, Sn, or a Heusler alloy, or a half Heusler alloy to provide high spin polarization and a low magnetic damping coefficient.
摘要翻译：公开了一种用于自旋电子器件的自旋阀结构，并且包括至少由Ta制成的复合种子层和具有fcc（111）或hcp（001）织构的金属层，以增强覆盖层（Co）中的垂直磁各向异性（PMA） / Ni）x多层。（Co / Ni）x多层通过低功率和高Ar压力工艺沉积，以避免损坏Co / Ni界面，从而保留PMA。结果，仅需要薄的种子层。即使在220℃退火10小时后也保持PMA。描述了GMR和TMR自旋阀的实例，并且可以结合在自旋转移振荡器和自旋转移MRAM中。自由层优选由包括Al，Ge，Si，Ga，B，C，Se，Sn或Heusler合金或Heusler合金中的至少一种的FeCo合金制成，以提供高自旋极化和低磁性阻尼系数。

27. 发明授权

US08008740B2 Low resistance tunneling magnetoresistive sensor with composite inner pinned layer 有权
标题翻译：低电阻隧道磁阻传感器，具有复合内固定层
公开(公告)号：US08008740B2
公开(公告)日：2011-08-30
申请号：US12586523
申请日：2009-09-23
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Yu-Hsia Chen , Min Li
IPC分类号： H01L43/00
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of
摘要翻译：通过在AP2 / Ru / AP1钉扎层配置中采用复合内固定（AP1）层制造高性能TMR传感器。在一个实施例中，Ru结合层上存在10至80埃厚的CoFeB或CoFeB合金层，CoFeB或CoFeB合金上为5至50埃厚的Fe或Fe合金层，厚度为5至30埃在Fe或Fe合金上形成Co或Co丰富的合金层。当在TMR堆叠中使用CoFe AP2层，MgO（NOX）隧道势垒和CoFe / NiFe自由层时，实现约48％的RA比为<2欧姆 - um2的MR比。观察到改善的RA均匀性和较少的头噪声。可选地，可以在耦合层和CoFeB或CoFeB合金层之间插入CoFe层以改善钉扎强度并增强结晶。

28. 发明授权

US07990718B2 Heat dissipation device having a clip assembly 失效
标题翻译：具有夹子组件的散热装置
公开(公告)号：US07990718B2
公开(公告)日：2011-08-02
申请号：US12535675
申请日：2009-08-04
申请人： Hui Xia , Min Li
发明人： Hui Xia , Min Li
IPC分类号： H05K7/20
CPC分类号： H01L23/4093 , H01L2924/0002 , H01L2924/00
摘要： A heat dissipation device for removing heat from an electronic component mounted on a printed circuit board includes a heat sink, a wire clip and two operating members. The heat sink has a bottom for in contact with the electronic component. The wire clip includes a middle part spanning over the heat sink and two latching legs extending oppositely from two opposite ends of the middle part, respectively, the two latching legs being located in front of and in rear of the heat sink, respectively. Each operating member includes a plate cam placed on the heat sink and a handle extending laterally from the plate cam. The middle part of the wire clip extends through the plate cams and can be lifted away from the heat sink by turning the operating members from an unlocking state to a locking state.
摘要翻译：用于从安装在印刷电路板上的电子部件除去热量的散热装置包括散热器，线夹和两个操作构件。散热器具有与电子部件接触的底部。电线夹包括跨过散热器的中间部分和分别从中间部分的两个相对端相对延伸的两个闩锁腿，两个闩锁腿分别位于散热器的前面和后面。每个操作构件包括放置在散热器上的平板凸轮和从板凸轮横向延伸的手柄。线夹的中间部分延伸穿过板凸轮，并且可以通过将操作构件从解锁状态转动到锁定状态而将其从散热器提升离开。

29. 发明授权

US07990660B2 Multiple CCP layers in magnetic read head devices 有权
公开(公告)号：US07990660B2
公开(公告)日：2011-08-02
申请号：US12930756
申请日：2011-01-14
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen
IPC分类号： G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/3983 , Y10T428/1121
摘要： An improved CPP magnetic read device whose oxide barrier comprises at least two separate CCP layers is disclosed. These two CCP layers differ in the PIT and IAO treatments that they received relative to the PIT/IAO treatment that would be used when only a single CCP layer is formed.

30. 发明申请

US20110183158A1 CPP structure with enhanced GMR ratio 有权
标题翻译： CPP结构具有增强的GMR比
公开(公告)号：US20110183158A1
公开(公告)日：2011-07-28
申请号：US13065975
申请日：2011-04-04
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Chyu-Jiuh Torng
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y40/00 , G11B5/3906 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F10/3295 , H01F41/18 , H01F41/303 , H01L43/10 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T428/1114 , Y10T428/1129 , Y10T428/115
摘要： A CPP-GMR spin valve having a CoFe/NiFe composite free layer is disclosed in which Fe content of the CoFe layer ranges from 20 to 70 atomic % and Ni content in the NiFe layer varies from 85 to 100 atomic % to maintain low Hc and λS values. A higher than normal Fe content in the CoFe layer improves the MR ratio by ≧16% compared with conventional CoFe/NiFe free layers in which the Fe content in CoFe is typically
摘要翻译：公开了一种具有CoFe / NiFe复合自由层的CPP-GMR自旋阀，其中CoFe层的Fe含量为20〜70原子％，NiFe层的Ni含量为85〜100原子％，保持低Hc， λS值。与FeFe中的Fe含量通常<20原子％，NiFe中的Ni含量<85原子％的常规CoFe / NiFe自由层相比，CoFe层中高于正常Fe含量使MR比提高了16％。 CPP-GMR性能也可以通过在被钉扎层和自由层之间的铜间隔物中结合约束电流通路层来优化。对于具有AP2 / Ru / AP1配置的钉扎层，通过由[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成的AP1层来进一步提高自旋阀性能。

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