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21. 发明授权

US08508690B2 Optical element and backlight unit and liquid crystal display having the same 有权
标题翻译：光学元件和背光单元以及具有相同的液晶显示器
公开(公告)号：US08508690B2
公开(公告)日：2013-08-13
申请号：US12537820
申请日：2009-08-07
申请人： Jeong-Ho Park , Young-Soo Do , Oh-Hyun Kwon
发明人： Jeong-Ho Park , Young-Soo Do , Oh-Hyun Kwon
IPC分类号： G02F1/1335
CPC分类号： G02B5/0278 , G02B5/0215 , G02B5/0221 , G02B5/0231 , G02B5/0263 , G02B6/0053
摘要： An optical element capable of increasing an angular field while improving luminance by condensing light, and a backlight unit and a liquid crystal display including the same. The optical element includes a light-transmitting base film; a plurality of diffusing cavities or convex diffusing structures formed in one surface of the base film to diffuse light entering the base film; and a light-condensing pattern formed in the surface of the base film where the diffusing cavities or convex diffusing structures are formed so as to condense incident light.
摘要翻译：一种能够通过聚光来增加角度场而提高亮度的光学元件，以及背光单元和包括该光学元件的液晶显示器。光学元件包括透光基膜; 形成在基膜的一个表面中的多个扩散空穴或凸扩散结构，以漫射进入基膜的光; 以及形成在基膜的表面中的聚光图案，其中形成有扩散空穴或凸形扩散结构以使入射光冷凝。

22. 发明授权

US08310997B2 Apparatus and method for dynamic channel allocation in multiple channel wireless communication system 有权
标题翻译：多通道无线通信系统动态信道分配的装置及方法
公开(公告)号：US08310997B2
公开(公告)日：2012-11-13
申请号：US12013719
申请日：2008-01-14
申请人： Nam-Gi Kim , Jae-Hee Cho , Jung-Je Son , Min-Hee Cho , Jae-Hyuk Jang , Jeong-Ho Park
发明人： Nam-Gi Kim , Jae-Hee Cho , Jung-Je Son , Min-Hee Cho , Jae-Hyuk Jang , Jeong-Ho Park
IPC分类号： H04W4/00
CPC分类号： H04W72/0406
摘要： An apparatus and method for dynamic channel allocation in a multiple channel wireless communication system are provided. The apparatus includes a scheduler for dividing resources to be used for a band Adaptive Modulation and Coding (AMC) channel and a diversity channel, a generator for generating a MAP heading field including physical distribution information on the band AMC channel and the diversity channel, and a mapper for mapping the MAP heading field to a predetermined physical resource region.
摘要翻译：提供了一种用于多信道无线通信系统中的动态信道分配的装置和方法。该装置包括用于划分用于频带自适应调制和编码（AMC）信道和分集信道的资源的调度器，用于生成包括关于频带AMC信道和分集信道的物理分布信息的MAP前导字段的发生器，以及用于将MAP标题字段映射到预定物理资源区域的映射器。

23. 发明申请

US20110085108A1 OPTICAL DEVICE, AND BACKLIGHT UNIT AND LIQUID CRYSTAL DISPLAY INCLUDING THE SAME 审中-公开
标题翻译：光学装置和背光单元以及包括其的液晶显示器
公开(公告)号：US20110085108A1
公开(公告)日：2011-04-14
申请号：US12996933
申请日：2009-06-09
申请人： Jeong-Ho Park , Young-Soo Do , Do-Yun Kim , Jung-Ae An
发明人： Jeong-Ho Park , Young-Soo Do , Do-Yun Kim , Jung-Ae An
IPC分类号： G02F1/1335 , G02B5/02 , G02F1/13357
CPC分类号： G02B5/0278 , G02B5/0231 , G02B5/0257 , G02B5/0263
摘要： An optical device which maintains luminance characteristics to the greatest extent, improves light-collecting effects, and realizes a wide viewing angle, and a backlight unit and an LCD including the same. The optical device includes a light-transmitting base film. A plurality of convex portions is formed on at least one surface of the base film, and microscopic optical patterns have peaks and valleys, which abut each other, on part of the convex portions. Alternatively, a plurality of third fine optical patterns is formed on at least one surface of the base film. A portion of each third fine optical patterns abutting the base film forms a figure having long and short axes. Each of the third fine optical patterns has a peak with a height that decreases from the center to both ends thereof along the long axis.
摘要翻译：保持最大程度的亮度特性的光学装置，提高聚光效果，实现广视角，以及背光单元和包括该光学装置的LCD。光学装置包括透光基膜。在基膜的至少一个表面上形成有多个凸部，在凸部的一部分上形成有微小的光学图案，并具有彼此抵接的峰谷。或者，在基膜的至少一个表面上形成多个第三精细光学图案。与基膜邻接的每个第三精细光学图案的一部分形成具有长轴和短轴的图形。每个第三精细光学图案具有沿着长轴从其中心到两端减小的高度的峰。

24. 发明授权

US07894632B2 Apparatus and method of estimating center line of intersection 有权
标题翻译：估计中心线交点的装置和方法
公开(公告)号：US07894632B2
公开(公告)日：2011-02-22
申请号：US11858181
申请日：2007-09-20
申请人： Jeong-Ho Park , Seong Ik Cho , Gee Ju Chae
发明人： Jeong-Ho Park , Seong Ik Cho , Gee Ju Chae
IPC分类号： G06K9/00
CPC分类号： G06K9/00798
摘要： Provided are a method and apparatus for estimating a center line of an intersection by recognizing a crosswalk on a road input through a camera installed in a vehicle. The apparatus includes a road information providing unit which provides information about a road being traveled based on location information of a traveling vehicle; a crosswalk recognizing unit which recognizes a crosswalk based on an input image of the intersection and the information about the road and obtains a distance from the traveling vehicle to the crosswalk; and an intersection center line estimating unit which estimates the center line of the intersection based on the information about the road and the distance from the traveling vehicle to the crosswalk. Since the center line of the intersection is estimated, the apparatus and method of estimating a center line of an intersection according to the present invention can prevent traffic accidents occurring frequently at an intersection and helps indicate direction information of ‘real vehicle navigation.’
摘要翻译：提供一种用于通过识别通过安装在车辆中的相机输入的道路上的人行横道来估计交叉路口的中心线的方法和装置。该装置包括道路信息提供单元，其基于行驶车辆的位置信息提供关于正在行驶的道路的信息; 基于交叉口的输入图像识别人行横道的人行横道识别单元和关于道路的信息，并获得从行进车辆到人行横道的距离; 以及基于关于道路的信息和从行驶车辆到人行横道的距离来估计交叉口的中心线的交叉路口中心线估计单元。由于估计了交点的中心线，所以根据本发明的估计交叉路口的中心线的装置和方法可以防止交叉路口频繁发生的交通事故，并且有助于指示“真正的车辆导航”的方向信息。

25. 发明授权

US07396727B2 Transistor of semiconductor device and method for fabricating the same 有权
标题翻译：半导体器件的晶体管及其制造方法
公开(公告)号：US07396727B2
公开(公告)日：2008-07-08
申请号：US11615812
申请日：2006-12-22
申请人： Jeong-Ho Park
发明人： Jeong-Ho Park
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/8236
CPC分类号： H01L29/66666 , H01L21/26586 , H01L29/105 , H01L29/7827
摘要： A transistor which may effectively control the short channel effect with a vertical transistor structure. This structure may prevent the degradation of a transistor's performance caused by the hot carrier effect. The transistor has a source region having a concentration of implanted impurity ions on a semiconductor substrate; a channel region having a cylindrical shape over the source region; a drain region formed over the channel region; a gate insulation layer formed over the source region, a side of the channel region, and the drain region; and a gate conductor extending over an upper portion and one side of the channel region.
摘要翻译：可以用垂直晶体管结构有效地控制短沟道效应的晶体管。这种结构可以防止由热载流子效应引起的晶体管性能的劣化。晶体管具有在半导体衬底上具有注入的杂质离子浓度的源区; 在所述源极区域上具有圆柱形状的沟道区域; 漏极区，形成在所述沟道区上; 形成在源极区域，沟道区域侧和漏极区域上的栅极绝缘层; 以及在沟道区域的上部和一侧延伸的栅极导体。

26. 发明申请

US20080157277A1 MIM CAPACITOR 审中-公开
标题翻译： MIM电容器
公开(公告)号：US20080157277A1
公开(公告)日：2008-07-03
申请号：US11964562
申请日：2007-12-26
申请人： Jeong-Ho Park , Ho-Yeong Choe
发明人： Jeong-Ho Park , Ho-Yeong Choe
IPC分类号： H01L21/283 , H01L29/92
CPC分类号： H01L28/40
摘要： Embodiments relate to a metal-insulator-metal (MIM) capacitor that may include a lower insulation layer where a capacitor lower metal layer is already formed, an intermediate structure, a first conductive structure, and a second conductive structure. The intermediate structure may include a first capacitor insulation pattern, a capacitor middle metal layer, a second capacitor insulation pattern, a capacitor upper metal layer, and an insulation pattern formed in sequence over the lower insulation layer. The first conductive structure may include a copper-based material and may be coupled between the capacitor upper metal layer and the capacitor lower metal layer. The second conductive structure may include a copper-based material and is coupled to the capacitor middle metal layer.
摘要翻译：实施例涉及金属 - 绝缘体 - 金属（MIM）电容器，其可以包括已经形成电容器下部金属层的下部绝缘层，中间结构，第一导电结构和第二导电结构。中间结构可以包括在下绝缘层上依次形成的第一电容器绝缘图案，电容器中间金属层，第二电容器绝缘图案，电容器上金属层和绝缘图案。第一导电结构可以包括铜基材料并且可以耦合在电容器上金属层和电容器下金属层之间。第二导电结构可以包括铜基材料并且耦合到电容器中间金属层。

27. 发明申请

US20070166930A1 TRANSISTOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件的晶体管及其制造方法
公开(公告)号：US20070166930A1
公开(公告)日：2007-07-19
申请号：US11615812
申请日：2006-12-22
申请人： Jeong-Ho Park
发明人： Jeong-Ho Park
IPC分类号： H01L21/336
CPC分类号： H01L29/66666 , H01L21/26586 , H01L29/105 , H01L29/7827
摘要： A transistor which may effectively control the short channel effect with a vertical transistor structure. This structure may prevent the degradation of a transistor's performance caused by the hot carrier effect. The transistor has a source region having a concentration of implanted impurity ions on a semiconductor substrate; a channel region having a cylindrical shape over the source region; a drain region formed over the channel region; a gate insulation layer formed over the source region, a side of the channel region, and the drain region; and a gate conductor extending over an upper portion and one side of the channel region.
摘要翻译：可以用垂直晶体管结构有效地控制短沟道效应的晶体管。这种结构可以防止由热载流子效应引起的晶体管性能的劣化。晶体管具有在半导体衬底上具有注入的杂质离子浓度的源区; 在所述源极区域上具有圆柱形状的沟道区域; 漏极区，形成在所述沟道区上; 形成在源极区域，沟道区域侧和漏极区域上的栅极绝缘层; 以及在沟道区域的上部和一侧延伸的栅极导体。

28. 发明申请

US20070166891A1 METHOD OF FABRICATING A FIN FIELD EFFECT TRANSISTOR IN A SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件中制造Fin场效应晶体管的方法
公开(公告)号：US20070166891A1
公开(公告)日：2007-07-19
申请号：US11608589
申请日：2006-12-08
申请人： Jeong-Ho Park
发明人： Jeong-Ho Park
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L29/7851 , H01L29/665 , H01L29/66795
摘要： A method for fabricating a fin FET in a semiconductor device. The method includes sequentially depositing first and second insulation films on a semiconductor substrate, etching the first and second insulation films using a first mask to form a trench, and depositing a first conductor in the trench.
摘要翻译：一种在半导体器件中制造鳍式FET的方法。该方法包括在半导体衬底上依次沉积第一和第二绝缘膜，使用第一掩模蚀刻第一和第二绝缘膜以形成沟槽，以及在沟槽中沉积第一导体。

29. 发明申请

US20070132036A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070132036A1
公开(公告)日：2007-06-14
申请号：US11637056
申请日：2006-12-12
申请人： Jeong-Ho Park
发明人： Jeong-Ho Park
IPC分类号： H01L21/336 , H01L29/76
CPC分类号： H01L29/66553 , H01L29/42376 , H01L29/665 , H01L29/66545 , H01L29/66621 , H01L29/7833
摘要： A method for manufacturing a semiconductor device, includes sequentially forming a first insulation film and a dummy gate electrode on a semiconductor substrate; forming a lightly doped junction region by using the dummy gate electrode as a mask, forming a first spacer on a side wall of the dummy gate electrode, and then forming a heavily doped junction region. The method further includes forming a second insulation film on the semiconductor substrate where the heavily doped junction region is formed, and removing the dummy gate electrode to form a cavity exposing a portion of the first insulation layer; forming a second spacer on a side wall of the cavity; sequentially forming a gate insulation film and a gate conductor on the second spacer, and then removing the second insulation film and a portion of the gate insulation film; and forming a salicide film on a top of the gate conductor and in the lightly doped junction region.
摘要翻译：一种半导体器件的制造方法，包括在半导体衬底上依次形成第一绝缘膜和伪栅电极; 通过使用伪栅极电极作为掩模形成轻掺杂的结区域，在虚拟栅电极的侧壁上形成第一间隔物，然后形成重掺杂的结区域。该方法还包括在半导体衬底上形成第二绝缘膜，其中形成重掺杂结区，以及去除伪栅电极以形成露出第一绝缘层的一部分的空腔; 在所述空腔的侧壁上形成第二间隔件; 在所述第二间隔物上依次形成栅极绝缘膜和栅极导体，然后去除所述第二绝缘膜和所述栅极绝缘膜的一部分; 以及在栅极导体的顶部和在轻掺杂的结区中形成自对准硅膜。

30. 发明授权

US06383379B1 Method of preparing a microbial culture for wastewater treatment 有权
标题翻译：制备污水处理微生物培养基的方法
公开(公告)号：US06383379B1
公开(公告)日：2002-05-07
申请号：US09529071
申请日：2000-06-19
申请人： Ki-Seung Choi , Jin-Man Kim , Myung-Ho Cho , Seung-Hwan Kim , Jeong-Ho Park
发明人： Ki-Seung Choi , Jin-Man Kim , Myung-Ho Cho , Seung-Hwan Kim , Jeong-Ho Park
IPC分类号： B01D100
CPC分类号： C02F3/34 , C02F3/12 , C02F3/348 , C12N1/20 , C12N1/26 , Y02W10/15
摘要： A method of preparing a microbial culture for wastewater treatment comprising the steps of supplying an aerated material derived from an aeration tank (13) to a bioreactor (17) and cultivating a microorganism existing in the aerated material by adding a culture having a relatively long preservation time and a large number of effective microorganisms.
摘要翻译：一种制备用于废水处理的微生物培养物的方法，包括以下步骤：将来自曝气池（13）的充气材料供应到生物反应器（17），并通过添加具有较长保存性的培养物培养存在于充气材料中的微生物时间和大量有效的微生物。

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