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21. 发明授权

US08110482B2 Miscut semipolar optoelectronic device 有权
标题翻译： Miscut半极光电子器件
公开(公告)号：US08110482B2
公开(公告)日：2012-02-07
申请号：US12710181
申请日：2010-02-22
申请人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： John F. Kaeding , Dong-Seon Lee , Michael Iza , Troy J. Baker , Hitoshi Sato , Benjamin A. Haskell , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02433 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
摘要翻译：使用有意识的基板改善半极性（Al，In，Ga，B）N半导体薄膜生长的方法。具体地说，该方法包括有意地将基板，基板加载到反应器中，在氮气和/或氢气和/或氨气流下加热基板，在加热的基板上沉积In x Ga 1-x N成核层，沉积半极性氮化物半导体薄膜在InxGa1-xN成核层上，并在氮气过压下冷却衬底。

22. 发明授权

US08044383B2 Thin P-type gallium nitride and aluminum gallium nitride electron-blocking layer free gallium nitride-based light emitting diodes 失效
标题翻译：薄型P型氮化镓和氮化镓铝电子阻挡层，无氮化镓基发光二极管
公开(公告)号：US08044383B2
公开(公告)日：2011-10-25
申请号：US12611063
申请日：2009-11-02
申请人： Hong Zhong , Anurag Tyagi , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Hong Zhong , Anurag Tyagi , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/18 , H01L33/02
摘要： A light emitting diode (LED) having a p-type layer having a thickness of 100 nm or less, an n-type layer, and an active layer, positioned between the p-type layer and the n-type layer, for emitting light, wherein the LED does not include a separate electron blocking layer.
摘要翻译：具有厚度为100nm以下的p型层的发光二极管（LED），位于p型层和n型层之间的n型层和有源层，用于发光，其中LED不包括单独的电子阻挡层。

23. 发明授权

US07956371B2 High efficiency light emitting diode (LED) 有权
标题翻译：高效率发光二极管（LED）
公开(公告)号：US07956371B2
公开(公告)日：2011-06-07
申请号：US11608439
申请日：2006-12-08
申请人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L33/38
CPC分类号： H01L33/20 , G02B6/0018 , H01L33/507 , H01L33/508 , H01L33/58 , H01L33/60 , H01L2933/0091
摘要： An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.
摘要翻译：一种（Al，Ga，In）N发光二极管（LED），其中从芯片和/或磷光体转换层的光提取被优化。通过LED和封装光学器件的新颖成形，实现了高效率的发光二极管。

24. 发明申请

US20110037052A1 METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) GROWTH OF HIGH PERFORMANCE NON-POLAR III-NITRIDE OPTICAL DEVICES 有权
标题翻译：金属化学气相沉积（MOCVD）高性能非极性III-NITRIDE光学器件的生长
公开(公告)号：US20110037052A1
公开(公告)日：2011-02-17
申请号：US12914906
申请日：2010-10-28
申请人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Mathew C. Schmidt , Kwang Choong Kim , Hitsohi Sato , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/0075 , B82Y20/00 , H01L21/0237 , H01L21/02389 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01S5/34333 , H01S2304/04
摘要： A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.
摘要翻译：一种器件生长和p接触处理的方法，其产生非极性III族氮化物发光二极管和激光二极管的改善的性能。使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

25. 发明申请

US20100283078A1 TRANSPARENT MIRRORLESS LIGHT EMITTING DIODE 审中-公开
标题翻译：透明无光发光二极管
公开(公告)号：US20100283078A1
公开(公告)日：2010-11-11
申请号：US12836348
申请日：2010-07-14
申请人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L33/58 , H01L33/48
CPC分类号： H01L33/22 , H01L33/32 , H01L33/54 , H01L33/60 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49109 , H01L2924/00014 , H01L2924/00
摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.
摘要翻译：一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或与成形的光学元件组合，其可以是模制成球体的环氧树脂，玻璃，硅或其它材料或倒锥形，其中进入倒锥形的大部分光处于临界角内并被提取。本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。

26. 发明授权

US07781789B2 Transparent mirrorless light emitting diode 有权
标题翻译：透明无反射镜发光二极管
公开(公告)号：US07781789B2
公开(公告)日：2010-08-24
申请号：US11940898
申请日：2007-11-15
申请人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
发明人： Steven P. DenBaars , Shuji Nakamura , James S. Speck
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L29/24 , H01L29/18 , H01L21/00
CPC分类号： H01L33/22 , H01L33/32 , H01L33/54 , H01L33/60 , H01L2224/16245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49109 , H01L2924/00014 , H01L2924/00
摘要： An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e., creating microcones) may also assist in light extraction, as well as minimizing internal reflections.
摘要翻译：一种（Al，Ga，In）N发光二极管（LED），其中可以在进入成形光学元件之前随后将其提取到空气中，从LED的一个或多个表面提取多方向光。特别地，（Al，Ga，In）N和透明接触层（例如ITO或ZnO）嵌入或与成形的光学元件组合，其可以是模制成球体的环氧树脂，玻璃，硅或其它材料或倒锥形，其中进入倒锥形的大部分光处于临界角内并被提取。本发明还通过消除反射镜和/或镜像表面来最小化LED内的内部反射，以便通过LED的发射层（或有源层）使LED的光的再吸收最小化。为了帮助最小化内部反射，可以使用透明电极，例如ITO或ZnO。通过图案化或各向异性蚀刻（即，制造微孔）的表面粗糙化也可以有助于光提取，以及最小化内部反射。

27. 发明授权

US07338828B2 Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) 有权
标题翻译：用金属有机化学气相沉积（MOCVD）生长平面非极性{1 -1 0 0} m面氮化镓
公开(公告)号：US07338828B2
公开(公告)日：2008-03-04
申请号：US11444083
申请日：2006-05-31
申请人： Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/02658 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L21/0262
摘要： A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.
摘要翻译：生长平面非极性m面III-氮化物材料的方法，例如m面氮化镓（GaN）外延层，其中III-氮化物材料生长在合适的衬底上，例如m面硅碳化物（m-SiC）基板，使用金属有机化学气相沉积（MOCVD）。该方法包括进行溶剂清洁和浸渍基底以从表面除去氧化物，退火基板，在退火的基板上生长诸如氮化铝（AlN）的成核层，以及生长非极性m面使用MOCVD在成核层上的III-氮化物外延层。

28. 发明授权

US07220324B2 Technique for the growth of planar semi-polar gallium nitride 有权
标题翻译：平面半极性氮化镓生长技术
公开(公告)号：US07220324B2
公开(公告)日：2007-05-22
申请号：US11372914
申请日：2006-03-10
申请人： Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Troy J. Baker , Benjamin A. Haskell , Paul T. Fini , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： H01L29/00
CPC分类号： C30B29/406 , C30B25/02 , C30B25/18 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L33/007 , Y10S438/938
摘要： A method for growing planar, semi-polar nitride film on a miscut spinel substrate, in which a large area of the planar, semi-polar nitride film is parallel to the substrate's surface. The planar films and substrates are: (1) {10 11} gallium nitride (GaN) grown on a {100} spinel substrate miscut in specific directions, (2) {10 13} gallium nitride (GaN) grown on a {110} spinel substrate, (3) {11 22} gallium nitride (GaN) grown on a {1 100} sapphire substrate, and (4) {10 13} gallium nitride (GaN) grown on a {1 100} sapphire substrate.
摘要翻译：一种在杂交尖晶石衬底上生长平面，半极性氮化物膜的方法，其中大面积的平面半极性氮化物膜平行于衬底的表面。平面膜和衬底是：（1）在{100}尖晶石衬底上在特定方向上生长的{10 11}氮化镓（GaN），（2）{10 22}氮化镓 “100”蓝宝石衬底，以及（4）在{1 100}蓝宝石衬底上生长的{10 13}氮化镓（GaN）。

29. 发明申请

US20170327969A1 PLANAR NONPOLAR GROUP III-NITRIDE FILMS GROWN ON MISCUT SUBSTRATES 审中-公开
公开(公告)号：US20170327969A1
公开(公告)日：2017-11-16
申请号：US15607319
申请日：2017-05-26
申请人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
发明人： Kenji Iso , Hisashi Yamada , Makoto Saito , Asako Hirai , Steven P. DenBaars , James S. Speck , Shuji Nakamura
IPC分类号： C30B25/18 , C30B25/02 , C30B29/40 , H01L33/32 , H01L33/16 , H01L29/20 , H01L29/04 , B82Y20/00 , H01L21/02 , H01S5/32 , H01S5/343
CPC分类号： C30B25/18 , B82Y20/00 , C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/2003 , H01L33/16 , H01L33/32 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nonpolar III-nitride film grown on a miscut angle of a substrate. The miscut angle towards the direction is 0.75° or greater miscut and less than 27° miscut towards the direction. Surface undulations are suppressed and may comprise faceted pyramids. A device fabricated using the film is also disclosed. A nonpolar III-nitride film having a smooth surface morphology fabricated using a method comprising selecting a miscut angle of a substrate upon which the nonpolar III-nitride films are grown in order to suppress surface undulations of the nonpolar III-nitride films. A nonpolar III-nitride-based device grown on a film having a smooth surface morphology grown on a miscut angle of a substrate which the nonpolar III-nitride films are grown. The miscut angle may also be selected to achieve long wavelength light emission from the nonpolar film.

30. 发明授权

US09040327B2 Al(x)Ga(1-x)N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes 有权
标题翻译： Al（x）Ga（1-x）不含氮包覆的非极性III族氮化物基激光二极管和发光二极管
公开(公告)号：US09040327B2
公开(公告)日：2015-05-26
申请号：US13495231
申请日：2012-06-13
申请人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
发明人： Daniel F. Feezell , Mathew C. Schmidt , Kwang-Choong Kim , Robert M. Farrell , Daniel A. Cohen , James S. Speck , Steven P. DenBaars , Shuji Nakamura
IPC分类号： H01L21/00 , H01L29/06 , H01L33/32 , B82Y20/00 , H01L33/16 , H01L33/02 , H01L33/06 , H01S5/32 , H01S5/343
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/02 , H01L33/06 , H01L33/16 , H01S5/3211 , H01S5/34333
摘要： A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.
摘要翻译：一种制造Al x Ga 1-x N不包覆非极性III族氮化物基激光二极管或发光二极管的方法。由于在非极性晶面中没有极化场，这些非极性器件具有用作光波导的厚量子阱，以有效地将光学模式限制在有源区，并且不需要含Al波导覆层。

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