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21. 发明申请

US20080057344A1 Formation of Titanium Nitride Film 审中-公开
标题翻译：氮化钛薄膜的形成
公开(公告)号：US20080057344A1
公开(公告)日：2008-03-06
申请号：US10584642
申请日：2004-12-27
申请人： Seishi Murakami , Kunihiro Tada
发明人： Seishi Murakami , Kunihiro Tada
IPC分类号： B32B33/00 , B05C11/10 , C23C16/34
CPC分类号： H01L21/76846 , C23C16/34 , H01L21/28088 , H01L21/28556 , H01L21/7685 , H01L21/76864 , H01L21/7687 , H01L2221/1078
摘要： Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.
摘要翻译：公开了通过四氯化钛和氨的反应在基板上形成氮化钛膜的方法，同时使下层的腐蚀最小化。通过在供给受限区域中使四氯化钛和氨彼此反应而在底物上形成第一氮化钛层，同时使下层的腐蚀最小化。此后，在反应限制区域的第一氮化钛层上形成第二氮化钛层，同时实现良好的阶梯覆盖。

22. 发明授权

US06169032A CVD film formation method 失效
标题翻译： CVD膜形成方法
公开(公告)号：US06169032A
公开(公告)日：2001-01-02
申请号：US09102911
申请日：1998-06-23
申请人： Seishi Murakami , Tatsuo Hatano
发明人： Seishi Murakami , Tatsuo Hatano
IPC分类号： H01L2144
CPC分类号： C23C16/34 , C23C16/46 , C23C16/54 , H01L21/67017 , H01L21/76843
摘要： The present invention provides an apparatus and method for forming a film by loading an object to be processed into a process chamber, moving up supporting pins to receive the susceptor, heating the object to be processed with heat radiation for a predetermined time by means of a heater housed in the susceptor while the supporting pins is being moved up, mounting the object to be processed on the susceptor, introducing arbitrarily chosen gases to adjust an inner pressure and temperature in accordance with the film formation conditions, and introducing a raw material gas into the process chamber, thereby starting film formation. After completion of the film-formation, only the supply of the raw material gas is stopped, whereas supply of other gases is gradually stopped. When the object to be processed is unloaded from the process chamber after completion of the film formation process, first, supporting pins are moved up to move the object to be processed away from the heater housed in the susceptor. The object to be processed is cooled in this manner. By virtue of a series of operations, a rapid change temperature and, a rapid change in pressure applied to the object to be processed is avoided, resulting in preventing a rapid temperature change.
摘要翻译：本发明提供了一种用于通过将待加工物体加载到处理室中形成膜的装置和方法，使支撑销向上移动以接收基座，通过热辐射将热处理的物体加热预定时间收纳在基座上的加热器，同时支撑销向上移动，将待处理对象安装在基座上，引入任意选择的气体，以根据成膜条件调节内部压力和温度，并将原料气体引入处理室，从而开始成膜。在成膜完成之后，仅停止供应原料气体，而逐渐停止供应其它气体。当在成膜处理完成之后待处理物体从处理室中卸载时，首先，向上移动支撑销以将被处理物体从容纳在基座中的加热器移开。以这种方式冷却被处理物体。通过一系列操作，避免了快速变化的温度和施加到待处理物体上的压力的快速变化，从而防止了快速的温度变化。

23. 发明授权

US06153515A Method of forming multilayered film 失效
标题翻译：形成多层膜的方法
公开(公告)号：US06153515A
公开(公告)日：2000-11-28
申请号：US156896
申请日：1998-09-18
申请人： Seishi Murakami , Tatsuo Hatano
发明人： Seishi Murakami , Tatsuo Hatano
IPC分类号： C23C16/34 , C23C28/00 , H01L21/28 , H01L21/285 , H01L21/768 , H01L23/485 , H01L21/44
CPC分类号： H01L21/76856 , H01L21/76843 , H01L23/485 , H01L2924/0002
摘要： There is provided a method of forming a structure connecting a first conductive layer and a second conductive layer in a semiconductor device comprising the steps of forming an insulating film on the first conductive layer, forming a hole in the insulating layer in which a surface of the first conductive layer is partially exposed, forming a titanium layer on a surface of the first conductive layer exposed at least in the hole, nitriding a surface of the titanium layer, oxidizing an un-nitrided part of the surface of the titanium layer, forming a titanium nitride layer on the titanium layer, and forming the second conductive layer on the titanium nitride layer.
摘要翻译：提供了一种在半导体器件中形成连接第一导电层和第二导电层的结构的方法，包括以下步骤：在第一导电层上形成绝缘膜，在绝缘层中形成一个孔，第一导电层被部分地暴露，在至少暴露在孔中的第一导电层的表面上形成钛层，氮化钛层的表面，氧化钛层表面的未氮化部分，形成在钛层上形成氮化钛层，在氮化钛层上形成第二导电层。

24. 发明授权

US5709757A Film forming and dry cleaning apparatus and method 失效
标题翻译：成膜和干洗设备及方法
公开(公告)号：US5709757A
公开(公告)日：1998-01-20
申请号：US518980
申请日：1995-08-24
申请人： Tatsuo Hatano , Seishi Murakami , Kunihiro Tada
发明人： Tatsuo Hatano , Seishi Murakami , Kunihiro Tada
IPC分类号： H01L21/302 , B08B7/00 , C23C16/44 , H01L21/00 , H01L21/205 , H01L21/304 , H01L21/3065 , B08B3/10
CPC分类号： H01L21/67028 , B08B7/00 , C23C16/4405 , Y10S438/905
摘要： A film forming apparatus having a dry cleaning function comprises a process chamber for containing an object to be processed, a process gas supply system for introducing into the process chamber a process gas for forming one of a metal film or a metal compound film on the object, a heating device for depositing a component of the process gas on the object, thereby forming a film, a cleaning gas supply system for introducing into the process chamber a cleaning gas containing nitrogen trichloride or a fluoride such as chlorine trifluoride or nitrogen trifluoride for cleaning one of a metal or a metal compound adhering to an inner part of the process chamber due to the film formation, and an after-treatment gas supply system for introducing into the process chamber a cleaning after-treatment gas containing an alcohol.
摘要翻译：具有干洗功能的成膜装置包括用于容纳待处理物体的处理室，将处理室内引入用于在物体上形成金属膜或金属化合物膜之一的处理气体的处理气体供给系统用于将处理气体的成分沉积在物体上，从而形成膜的加热装置，用于将含有三氯化氮或氟化物如三氟化氯或三氟化氮的清洁气体引入处理室的清洁气体供给系统用于清洁由于成膜而附着在处理室的内部的金属或金属化合物之一，以及用于将含有醇的清洁后处理气体引入处理室的后处理气体供给系统。

25. 发明授权

US5462603A Semiconductor processing apparatus 失效
标题翻译：半导体处理装置
公开(公告)号：US5462603A
公开(公告)日：1995-10-31
申请号：US265139
申请日：1994-06-24
申请人： Seishi Murakami
发明人： Seishi Murakami
IPC分类号： H01L21/205 , C23C16/44 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/4586 , C23C16/46 , H01L2924/0002
摘要： A CVD apparatus for a semiconductor wafer comprises a process chamber made of aluminum. A cylindrical quartz made case having a lower end opening is provided in the process chamber to mount the wafer. A flange of the lower end of the case is airtightly connected to a bottom wall of the process chamber to surround an opening formed in the bottom wall of the process chamber. The inner space of the case is airtightly isolated from a process space. The opening of the bottom wall is closed by a cover from the outside of the process chamber. A resistance heating body is provided in the case to be opposite to a top plate. Feed lines, and a thermocouple are introduced into the case from an atmospheric side through the cover. An inactive gas supply pipe and an exhausting pipe are connected to the cover. The inside of the case is in an inactive gas atmosphere, and oxidation of the resistance heating body is prevented.
摘要翻译：用于半导体晶片的CVD装置包括由铝制成的处理室。在处理室中设置具有下端开口的圆柱形石英制壳体以安装晶片。壳体下端的凸缘气密地连接到处理室的底壁，以围绕形成在处理室的底壁中的开口。外壳的内部空间与工艺空间密封隔离。底壁的开口由处理室外部的盖子封闭。在壳体中设置与顶板相反的电阻加热体。进料管线和热电偶从大气层通过盖子引入壳体。无源气体供给管和排气管连接到盖。壳体内部处于惰性气体气氛中，防止电阻加热体的氧化。

26. 发明授权

US5393565A Method for deposition of a refractory metal nitride and method for formation of a conductive film containing a refractory metal nitride 失效
$Method for deposition of a refractory metal nitride and method for formation of a conductive film containing a refractory metal nitride$
标题翻译：用于沉积难熔金属氮化物的方法和用于形成含有难熔金属氮化物的导电膜的方法
公开(公告)号：US5393565A
公开(公告)日：1995-02-28
申请号：US72086
申请日：1993-06-07
申请人： Toshiya Suzuki , Takayuki Ohba , Shimpei Jinnouchi , Seishi Murakami
发明人： Toshiya Suzuki , Takayuki Ohba , Shimpei Jinnouchi , Seishi Murakami
IPC分类号： C23C16/34 , H01L21/768 , C23C16/00
CPC分类号： H01L21/76855 , C23C16/34 , H01L21/76843
摘要： A refractory metal nitride is deposited at a temperature of 600.degree. C. according to a chemical vapor phase deposition method by using a source gas containing a refractory metallic element and a reduction gas containing one of an alkyl amino compound, alkyl azide compound, hydrazine and a hydrazine alkyl compound for reducing the source gas. This refractory metal nitride is used as a barrier metal material for interconnection in a semiconductor device. When forming a refractory metal nitride as a barrier metal on a silicon layer or forming a contact metal between the barrier metal and the silicon layer, a natural oxide film on the surface of the silicon layer set in a pressure-reduced atmosphere is removed by reducing with hydrazine or a hydrazine alkyl compound.
摘要翻译：根据化学气相沉积法，通过使用含有难熔金属元素的源气体和含有烷基氨基化合物，烷基叠氮化合物，肼和其中之一的还原气体，在600℃的温度下沉积难熔金属氮化物用于还原源气体的肼烷基化合物。这种难熔金属氮化物用作半导体器件中的互连的阻挡金属材料。当在硅层上形成作为阻挡金属的难熔金属氮化物或在阻挡金属和硅层之间形成接触金属时，在减压气氛中设置的硅层表面上的自然氧化膜通过减少与肼或肼烷基化合物反应。

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