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    • 22. 发明授权
    • Multiwavelength light source device employing annular optical delay circuit
    • 采用环形光延迟电路的多波长光源器件
    • US06792215B1
    • 2004-09-14
    • US09856518
    • 2001-05-21
    • Isao KobayashiKoji KawakitaHiroshi FurukawaShigeru Kinugawa
    • Isao KobayashiKoji KawakitaHiroshi FurukawaShigeru Kinugawa
    • H04J1400
    • H04J14/02H04B10/506H04B10/572
    • A multi-wavelength light source apparatus includes a tunable light source, optical intensity modulator, optical coupler, annular optical delay circuit, and optical gate device. The tunable light source successively changes and outputs a plurality of output lights different in wavelength from one another. The optical intensity modulator outputs a modulated signal light obtained by modulating an amplitude of the output light outputted from the tunable light source over a predetermined time. The optical coupler is optically connected to the optical intensity modulator, and receives the light outputted from the optical intensity modulator. The annular optical delay circuit is optically connected to the optical coupler, and delays a part of the output light outputted from the optical intensity modulator over a time longer than the predetermined time. The optical gate device is optically connected to the optical coupler, receives the output light outputted from the optical intensity modulator and the light passed via the annular optical delay circuit to open a gate at a timing and time width such that all of the signal light modulated over the predetermined time is included one by one for each of the plurality of wavelengths.
    • 多波长光源装置包括可调谐光源,光强度调制器,光耦合器,环形光延迟电路和光栅装置。 可调谐光源连续地改变并输出波长不同的多个输出光。 光强度调制器通过在预定时间内调制从可调谐光源输出的输出光的振幅而获得的调制信号光。 光耦合器光学连接到光强度调制器,并且接收从光强度调制器输出的光。 环形光延迟电路光连接到光耦合器,并且在比预定时间长的时间内延迟从光强度调制器输出的一部分输出光。 光栅装置光学连接到光耦合器,接收从光强度调制器输出的输出光和经由环形光延迟电路通过的光以定时和时间宽度打开一个栅极,使得所有信号光调制 在多个波长中的每个波长上一个接一个地包含预定时间。
    • 24. 发明授权
    • Method for fabricating a bonded SOI wafer
    • 制造接合SOI晶片的方法
    • US5953620A
    • 1999-09-14
    • US764588
    • 1996-12-13
    • Hirotaka KatouHiroshi FurukawaKazuaki Fujimoto
    • Hirotaka KatouHiroshi FurukawaKazuaki Fujimoto
    • H01L21/762H01L21/302H01L21/34
    • H01L21/76251
    • A method for fabricating a bonded SOI wafer is provided in which no void is produced during a waiting period from the completion of a bonding step to the start of a bonding thermal processing step without a special restriction. The method for fabricating a bonded SOI wafer includes a bonding step in which an active wafer, which has been single- or both-side mirror polished and thermal oxidation processed to form an insulating layer of a predetermined thickness, is pressed and bonded to a single- or both-side mirror polished base wafer; and a bonding thermal processing step for carrying out a bonding thermal processing for bonding the wafer, in which a hydrophobic processing step for the base wafer and a hydrophilic processing step for the active wafer are carried out before the bonding step.
    • 提供一种制造接合SOI晶片的方法,其中在从结合步骤完成到结合热处理步骤开始的等待期间不产生空隙而没有特别限制。 制造接合SOI晶片的方法包括:将单面或双面镜面抛光和热氧化处理以形成预定厚度的绝缘层的活性晶片按压并结合到单个 - 或双面镜面抛光底片; 以及接合热处理步骤,用于在接合步骤之前执行用于接合晶片的接合热处理,其中用于基底晶片的疏水处理步骤和用于活性晶片的亲水处理步骤。