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21. 发明授权

US4868134A Method of making a variable-capacitance diode device 失效
标题翻译：制造变容二极管器件的方法
公开(公告)号：US4868134A
公开(公告)日：1989-09-19
申请号：US233064
申请日：1988-08-17
申请人： Takeshi Kasahara
发明人： Takeshi Kasahara
IPC分类号： H01L21/329 , H01L29/36 , H01L29/93
CPC分类号： H01L29/66174 , H01L29/36 , H01L29/93 , Y10S148/171 , Y10S438/919
摘要： A method of making a variable-capacitance diode device including semiconductor layer a first conductivity type in which the impurity concentration decreases with increasing depth from surface of a PN junction. The semiconductor layer of the first conductivity type is formed by diffusing an impurity element of the first conductivity type in a semiconductor substrate with a high degree of concentration. Thereafter, a semiconductor layer of a second conductivity type is formed which has such an impurity concentration profile that the concentration of impurity element of the second conductivity type is lower than the impurity concentration of said semiconductor layer of the first conductivity type formed in said semiconductor substrate and at a predetermined depth, the concentration of the second conductivity type impurity element is substantially equal or close to the concentration of the first conductivity type impurity element. Subsequent to the formation of the first conductivity type semiconductor layer, an impurity element of the second conductivity type is diffused so as to define said PN junction with said first conductivity type semiconductor layer.
摘要翻译：一种制造变容二极管器件的方法，该器件包括第一导电类型的半导体层，其中杂质浓度随着PN结表面的深度增加而减小。第一导电类型的半导体层通过在半导体衬底中以高浓度的浓度扩散第一导电类型的杂质元素而形成。此后，形成第二导电类型的半导体层，其具有这样的杂质浓度分布，使得第二导电类型的杂质元素的浓度低于形成在所述半导体衬底中的所述第一导电类型的所述半导体层的杂质浓度并且在预定深度，第二导电型杂质元素的浓度基本上等于或接近于第一导电型杂质元素的浓度。在形成第一导电类型半导体层之后，第二导电类型的杂质元素被扩散以便与所述第一导电类型半导体层限定所述PN结。

22. 再颁专利

USRE43778E1 Printing apparatus and printing method using a plurality of printers and which distributes a print job in accordance with a remaining amount of an expendable supply in each printer 有权
标题翻译：使用多台打印机的打印设备和打印方法，并且根据每个打印机中的消耗品的剩余量来分发打印作业
公开(公告)号：USRE43778E1
公开(公告)日：2012-10-30
申请号：US12330788
申请日：2000-06-29
申请人： Wataru Nimura , Takahiro Mizushina , Hiroki Takahashi , Takeshi Kasahara , Kimiyasu Mizuno
发明人： Wataru Nimura , Takahiro Mizushina , Hiroki Takahashi , Takeshi Kasahara , Kimiyasu Mizuno
IPC分类号： G06F15/00
CPC分类号： H04N1/00143 , G06Q30/02 , H04N1/00132 , H04N1/00161 , H04N1/00175 , H04N1/00188 , H04N1/00339 , H04N1/00411
摘要： A photographic print vending apparatus is provided which comprises a media accepting unit which accepts a recording medium having photographic image information stored thereon. An image information reader reads the image information from the recording medium, and a plurality of printers print images based on image data from a processor connected to the image information reader and an advertisement information storage unit. When an advertisement printing mode is set, the processor reads the advertisement information from the advertisement information storage unit, synthesizes the read advertisement information and the image information read by the image information reader, and supplies the synthesized information to the printers as image data.
摘要翻译：提供了一种照相印刷自动售卖装置，其包括一个介质接收单元，该介质接收单元接收具有存储在其上的摄影图像信息的记录介质。图像信息读取器从记录介质读取图像信息，并且多个打印机基于来自连接到图像信息读取器的处理器和广告信息存储单元的图像数据来打印图像。当设置广告打印模式时，处理器从广告信息存储单元读取广告信息，合成读取的广告信息和由图像信息读取器读取的图像信息，并将合成信息作为图像数据提供给打印机。

23. 发明授权

US06479840B2 Diode 失效
标题翻译：二极管
公开(公告)号：US06479840B2
公开(公告)日：2002-11-12
申请号：US09800540
申请日：2001-03-07
申请人： Takeshi Kasahara , Shinichi Shigematsu
发明人： Takeshi Kasahara , Shinichi Shigematsu
IPC分类号： H01L2988
CPC分类号： H01L29/402 , H01L24/05 , H01L29/868 , H01L2224/04042 , H01L2224/48453 , H01L2224/48463 , H01L2924/12036 , H01L2924/00
摘要： Disclosed is an inventive diode which can reduce a stray capacity to improve various characteristics thereof, in which a dielectric layer, a conductive layer and a second dielectric layer are respectively formed by deposition in this order on an upper face of a semiconductor substrate excluding a central portion of an exposed surface of a P-type region. Then, an anode side electrode is formed extending from the exposed surface of the P-type region to the upper face of the second dielectric layer, and is electrically connected with the P-type region. Herein, the conductive layer is formed such that it is isolated from the electrode by the second dielectric layer, is connected with the semiconductor substrate upper face in a location where the dielectric layer has not been formed, and partially resides in a location sandwiched between the electrode and the semiconductor substrate. Such configuration could prevent a depletion layer from being generated in the vicinity of a surface of a higher resistivity region lying under the conductive region. Further, according to such configuration, a stray capacity between the electrode and the semiconductor substrate could be made lower than the capacity value generated between the electrode and the conductive layer.
摘要翻译：公开了一种本发明的二极管，其可以降低杂散能力以改善其各种特性，其中介电层，导电层和第二介电层分别通过在半导体衬底的上表面上依次沉积而形成，不包括中心 P型区域的露出表面的一部分。然后，阳极侧电极形成为从P型区域的露出面延伸到第二介电层的上表面，并与P型区域电连接。这里，导电层形成为通过第二介电层与电极隔离，在未形成电介质层的位置与半导体基板上表面连接，部分位于夹在电极和半导体衬底。这种构造可以防止在位于导电区域下方的较高电阻率区域的表面附近产生耗尽层。此外，根据这样的结构，可以使电极和半导体衬底之间的杂散电容低于在电极和导电层之间产生的电容值。

24. 发明授权

US06153921A Diode device 有权
标题翻译：二极管器件
公开(公告)号：US06153921A
公开(公告)日：2000-11-28
申请号：US434283
申请日：1999-11-05
申请人： Yutaka Aoki , Takashi Ishikawa , Haruhiko Taguchi , Takeshi Kasahara
发明人： Yutaka Aoki , Takashi Ishikawa , Haruhiko Taguchi , Takeshi Kasahara
IPC分类号： H01L21/60 , H01L29/861 , H01L29/93 , H01L31/02 , H01L31/0224 , H01L31/105 , H01L31/075
CPC分类号： H01L31/02005 , H01L24/05 , H01L24/06 , H01L31/022408 , H01L31/105 , H01L2224/04042 , H01L2224/05 , H01L2224/0603 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01004 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/12034 , H01L2924/12036 , H01L2924/12042 , H01L2924/14
摘要： Disclosed is a diode device in which two electrodes of regions forming both terminals are provided on the same face, thereby enabling the device to be connected to a circuit substrate by face-down bonding. Since a region is located within the semiconductor base, an electrode cannot be connected at the top face thereof; to overcome this, a groove is provided extending in a perpendicular direction from the top face of the semiconductor base to the region, and an electrode is provided in the groove. Then, the electrode in the groove is exposed at the top face, enabling the electrodes of both regions to be connected at the top face.
摘要翻译：公开了一种二极管器件，其中形成两个端子的区域的两个电极设置在同一个面上，从而使得器件能够通过面朝下的接合连接到电路衬底。由于区域位于半导体基底内，电极不能在其顶面连接; 为了克服这一点，提供了从半导体基底的顶面到该区域在垂直方向上延伸的凹槽，并且在凹槽中设置电极。然后，凹槽中的电极在顶面露出，使得两个区域的电极能够在顶面连接。

25. 发明授权

US5338966A Variable capacitance diode device 失效
标题翻译：可变电容二极管器件
公开(公告)号：US5338966A
公开(公告)日：1994-08-16
申请号：US76024
申请日：1993-05-27
申请人： Takeshi Kasahara
发明人： Takeshi Kasahara
IPC分类号： H01L29/93
CPC分类号： H01L29/93 , H01L2224/05624 , H01L2224/45144 , H01L2224/48624 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01072
摘要： There is provided a variable capacitance diode device. The device comprises a semiconductor substrate of a first conductive type, an epitaxial layer of the first conductive type with a high specific resistance formed on the semiconductor substrate, a first diffusion layer of the first conductive type, in which impurities are more diffused than the epitaxial layer, formed in the epitaxial layer and a second diffusion layer of a second conductive type which forms a junction with the first diffusion layer. The first diffusion layer is formed in a hollow cylindrical body or a hollow square pole body, etc., so as to enlarge an outer peripheral area thereof.
摘要翻译：提供了可变电容二极管器件。该器件包括第一导电类型的半导体衬底，形成在半导体衬底上的具有高电阻率的第一导电类型的外延层，第一导电类型的第一扩散层，其中杂质比外延扩散形成在外延层中的第二扩散层和与第一扩散层形成结的第二导电类型的第二扩散层。第一扩散层形成在中空圆柱体或中空方形极体等中，以便扩大其外周面积。

26. 发明授权

US5225708A Semiconductor junction capacitance element with breakdown voltage protection 失效
标题翻译：具有击穿电压保护的半导体结电容元件
公开(公告)号：US5225708A
公开(公告)日：1993-07-06
申请号：US971934
申请日：1992-11-05
申请人： Takeshi Kasahara
发明人： Takeshi Kasahara
IPC分类号： H01L27/04 , H01L21/822 , H01L29/92 , H01L29/93
CPC分类号： H01L29/93
摘要： An semiconductor junction capacitance element equipped with the function of preventing electrostatic breakdown is disclosed in which a main PN junction adapted to serve as variable capacitance diode is defined in an epitaxial layer of a first conductivity type. A diffusion layer of the first conductivity type is provided in the epitaxial layer at a position spaced apart from a lateral PN junction which is exposed at major surface of the epitaxial layer so that the breakdown voltage of the lateral PN junction is set up to be lower than the breakdown voltage of the main PN junction by virtue of the provision of the diffusion layer.
摘要翻译：公开了一种具有防止静电击穿的功能的半导体结电容元件，其中适于用作可变电容二极管的主PN结限定在第一导电类型的外延层中。第一导电类型的扩散层在与外延层的主表面处暴露的横向PN结隔开的位置处设置在外延层中，使得横向PN结的击穿电压被设置为较低比通过提供扩散层的主PN结的击穿电压。

27. 发明授权

US5220193A Variable-capacitance diode device with common electrode 失效
标题翻译：具有公共电极的可变电容二极管器件
公开(公告)号：US5220193A
公开(公告)日：1993-06-15
申请号：US775034
申请日：1991-10-11
申请人： Takeshi Kasahara , Haruhiko Taguchi
发明人： Takeshi Kasahara , Haruhiko Taguchi
IPC分类号： H01L21/60 , H01L29/93
CPC分类号： H01L24/48 , H01L24/05 , H01L24/49 , H01L29/93 , H01L2224/04042 , H01L2224/05001 , H01L2224/05073 , H01L2224/05624 , H01L2224/45015 , H01L2224/451 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/4845 , H01L2224/48463 , H01L2224/48624 , H01L2224/49113 , H01L24/45 , H01L2924/01004 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01033 , H01L2924/01039 , H01L2924/01072 , H01L2924/01079 , H01L2924/01082 , H01L2924/12034 , H01L2924/12036 , H01L2924/19041 , H01L2924/30105
摘要： A plurality of variable-capacitance diode elements are formed in the top of a semiconductor substrate. The rear surface of the substrate is connected to a first lead frame that acts as a common electrode for one electrode from each of the variable-capacitance diode elements. Each of the other electrodes of the variable-capacitance diode elements is connected by a wire to a second lead frame. In this manner, a single variable-capacitance diode device is formed between the first and second lead frames by a plurality of variable-capacitance diode elements.
摘要翻译：在半导体衬底的顶部形成多个可变电容二极管元件。基板的后表面连接到作为来自每个可变电容二极管元件的一个电极的公共电极的第一引线框架。变容二极管元件的其他电极中的每一个通过导线连接到第二引线框架。以这种方式，通过多个可变电容二极管元件在第一和第二引线框架之间形成单个可变电容二极管器件。

28. 发明授权

US4954850A Variable-capacitance diode device 失效
标题翻译：变容二极管器件
公开(公告)号：US4954850A
公开(公告)日：1990-09-04
申请号：US231714
申请日：1988-08-12
申请人： Takeshi Kasahara
发明人： Takeshi Kasahara
IPC分类号： H01L29/36 , H01L29/93
CPC分类号： H01L29/36 , H01L29/93
摘要： In a variable-capacitance diode device consisting of a PN junction, and a semiconductor layer of a first conductivity type, the impurity concentration of which decreases as the depth from the PN junction increases, the semiconductor layer of the first conductivity type is arranged to include, except in the vicinity of the PN junction, at least one such point that the following relationship holds true:Ai.ltoreq.Ai+1 (i=1, 2, . . . , n)where Ai represents impurity concentration of said semiconductor layer of the first conductivity type at a distance Xi as viewed depth-wise of the PN junction.
摘要翻译：在由PN结组成的变容二极管器件和第一导电类型的半导体层中，其杂质浓度随着PN结的深度增加而减小，第一导电类型的半导体层被布置为包括除了在PN结附近，至少有一个这样的点，以下关系成立：Ai = i + 1（i = 1,2，...，n）其中Ai表示所述半导体的杂质浓度在PN结的深度方向上以距离Xi的第一导电类型的层。

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