专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US07064357B2 Nitride compound semiconductor light emitting device and method for producing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07064357B2
公开(公告)日：2006-06-20
申请号：US09759312
申请日：2001-01-12
申请人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
发明人： Yoshihiro Ueta , Takayuki Yuasa , Atsushi Ogawa , Yuhzoh Tsuda , Masahiro Araki
IPC分类号： H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/16 , H01S5/0207 , H01S5/2201 , H01S5/3054 , H01S5/3202 , H01S5/32341 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a direction by an angle which is equal to or greater than about 0.05° and which is equal to or less than about 2°, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.
摘要翻译：一种氮化物化合物半导体发光器件包括：具有晶体取向的GaN衬底，其倾斜远离<0001>方向等于或大于约0.05°并且等于或小于约2° 以及形成在所述GaN衬底上的半导体多层结构，其中所述半导体多层结构包括：含有氮化物半导体的受主掺杂层; 以及包括发光区域的有源层。

22. 发明授权

US06924512B2 Nitride semiconductor light-emitting device and optical apparatus including the same 失效
标题翻译：氮化物半导体发光装置及其制造方法
公开(公告)号：US06924512B2
公开(公告)日：2005-08-02
申请号：US10276512
申请日：2001-05-07
申请人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Takayuki Yuasa , Shigetoshi Ito
IPC分类号： H01L33/06 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/20 , H01S5/30 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/00 , H01S5/2009 , H01S5/305 , H01S5/34333 , H01S5/3434 , H01S5/34346
摘要： A nitride semiconductor light emitting device includes an emission layer (106) having a multiple quantum well structure where a plurality of quantum well layers and a plurality of barrier layers are alternately stacked. The quantum well layer is formed of XN1-x-y-zAsxPySbz (0≦x≦0.15, 0≦y≦0.2, 0≦z≦0.05, x+y+z>0) where X represents one or more kinds of group III elements. The barrier layer is formed of a nitride semiconductor layer containing at least Al.
摘要翻译：氮化物半导体发光器件包括具有多个量子阱结构的发射层（106），其中多个量子阱层和多个势垒层交替堆叠。量子阱层由XN 1-xy z≡SSb>> is is is x x（（（（（（（（（（x x x x x x x x x x x x x x x x x x x x x x x x x x x <= 0.15,0 <= y <= 0.2,0 <= z <= 0.05，x + y + z> 0）其中X表示一种或多种III族元素。阻挡层由至少含有Al的氮化物半导体层形成。

23. 发明申请

US20100002738A1 Nitride-based semiconductor light-emitting device 审中-公开
标题翻译：氮化物系半导体发光元件
公开(公告)号：US20100002738A1
公开(公告)日：2010-01-07
申请号：US12458128
申请日：2009-07-01
申请人： Teruyoshi Takakura , Yuhzoh Tsuda , Masataka Ohta
发明人： Teruyoshi Takakura , Yuhzoh Tsuda , Masataka Ohta
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/1082 , H01S5/22 , H01S5/3202
摘要： It is intended to improve operation characteristics of a nitride-based semiconductor light-emitting device including a nitride-based semiconductor crystal substrate having a main surface of a non-polarity plane.A nitride-based semiconductor light-emitting device includes a nitride-based semiconductor crystal substrate and semiconductor stacked-layer structure of crystalline nitride-based semiconductor formed on a main surface of the substrate, wherein the semiconductor staked-layer structure includes an active layer sandwiched between an n-type layer and a p-type layer, the main surface of the substrate has a crystallographic plane tilted from a {10-10} plane of the nitride-based semiconductor crystal by an angle of more than −0.5° and less than −0.05° or more than +0.05° and less than +0.5° about a axis.
摘要翻译：旨在改善包括具有非极性平面的主表面的氮化物基半导体晶体基板的氮化物基半导体发光器件的操作特性。氮化物系半导体发光元件包括氮化物系半导体晶体基板和形成在基板的主面上的结晶性氮化物系半导体的半导体层叠结构，其中半导体淀积层结构包括夹层的活性层在n型层和p型层之间，衬底的主表面具有从氮化物类半导体晶体的{10-10}面倾斜大于-0.5°以下的角度的结晶面大于-0.05°或大于+ 0.05°且小于+0.5°。

24. 发明授权

US07709858B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07709858B2
公开(公告)日：2010-05-04
申请号：US11206222
申请日：2005-08-18
申请人： Yuhzoh Tsuda , Takeshi Kamikawa
发明人： Yuhzoh Tsuda , Takeshi Kamikawa
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/007 , H01S5/0207 , H01S5/3202
摘要： A first region and a second region that has a defect density of which the value is higher than that of the first region are respectively formed so as to be aligned in stripe form in the direction parallel to the direction in which a dug out region extends, where atoms that terminate the surface of the first region are different from atoms that terminate the surface of the aforementioned second region, and the dug out region includes the first region and the second region.
摘要翻译：具有比第一区域的缺陷密度高的缺陷密度的第一区域和第二区域分别形成为在平行于挖出区域延伸的方向的方向上以条形排列，其中终止第一区域的表面的原子不同于终止上述第二区域的表面的原子，并且该挖出区域包括第一区域和第二区域。

25. 发明授权

US06765233B2 Semiconductor substrate, light emitting device, and method for producing the same 有权
标题翻译：半导体衬底，发光器件及其制造方法
公开(公告)号：US06765233B2
公开(公告)日：2004-07-20
申请号：US09904162
申请日：2001-07-11
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Seiki Yano
IPC分类号： H01L2715
CPC分类号： H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L33/007
摘要： A method for producing a semiconductor substrate of the present invention, includes the steps: forming a first patterned mask containing a material having a growth suppressing effect on a lower substrate; growing a semiconductor crystal on the lower substrate via the first patterned mask to form a first semiconductor crystal layer; forming a second patterned mask containing a material having a growth suppressing effect on or above the lower substrate, the second patterned mask at least having a surface which is positioned at a level different from a level of a surface of the first patterned mask, with respect to a surface of the lower substrate; and growing a semiconductor crystal on or above the lower substrate via the second patterned mask to form a second semiconductor crystal layer.
摘要翻译：本发明的半导体衬底的制造方法包括以下步骤：在下基板上形成含有具有生长抑制作用的材料的第一图案掩模; 通过第一图案化掩模在下基板上生长半导体晶体以形成第一半导体晶体层; 形成第二图案化掩模，其包含在下基板上或上方具有生长抑制作用的材料，所述第二图案化掩模至少具有位于与第一图案化掩模的表面的水平不同的水平面的表面，相对于到下基板的表面; 以及经由所述第二图案化掩模在所述下基板上或上方生长半导体晶体以形成第二半导体晶体层。

26. 发明授权

US06586779B2 Light emitting nitride semiconductor device, and light emitting apparatus and pickup device using the same 有权
公开(公告)号：US06586779B2
公开(公告)日：2003-07-01
申请号：US10128490
申请日：2002-04-24
申请人： Yuhzoh Tsuda , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Shigetoshi Ito
IPC分类号： H01L3300
CPC分类号： H01L33/32 , B82Y20/00 , G11B7/127 , H01L33/325 , H01S5/0425 , H01S5/22 , H01S5/34333
摘要： There is provided a light emitting device having high luminous efficacy or emission intensity. The device includes a light emitting layer provided between n- and p-type layers of nitride semiconductor formed on a GaN substrate. The light emitting layer is formed of a well layer or a combination of well and barrier layers. The well layer is made of a nitride semiconductor containing an element X, N and Ga, wherein X is As, P or Sb. The ratio of the number of the atoms of element X to the sum of the number of the atoms of element X and N, is not more than 30 atomic percent. The well layer contains Mg, Be, Zn, Cd, C, Si, Ge, Sn, O, S, Se or Te as an impurity for improving the crystallinity of the well layer.

27. 发明申请

US20060038166A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060038166A1
公开(公告)日：2006-02-23
申请号：US11206222
申请日：2005-08-18
申请人： Yuhzoh Tsuda , Takeshi Kamikawa
发明人： Yuhzoh Tsuda , Takeshi Kamikawa
IPC分类号： H01L29/06
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/007 , H01S5/0207 , H01S5/3202
摘要： A first region and a second region that has a defect density of which the value is higher than that of the first region are respectively formed so as to be aligned in stripe form in the direction parallel to the direction in which a dug out region extends, where atoms that terminate the surface of the first region are different from atoms that terminate the surface of the aforementioned second region, and the dug out region includes the first region and the second region.
摘要翻译：具有比第一区域的缺陷密度高的缺陷密度的第一区域和第二区域分别形成为在平行于挖出区域延伸的方向的方向上以条纹的形式排列，其中终止第一区域的表面的原子不同于终止上述第二区域的表面的原子，并且该挖出区域包括第一区域和第二区域。

28. 发明授权

US06909120B2 Nitride semiconductor luminous element and optical device including it 有权
标题翻译：氮化物半导体发光元件和包括它的光学器件
公开(公告)号：US06909120B2
公开(公告)日：2005-06-21
申请号：US10415699
申请日：2001-11-05
申请人： Yuhzoh Tsuda , Shigetoshi Ito
发明人： Yuhzoh Tsuda , Shigetoshi Ito
IPC分类号： H01L33/06 , H01L33/32 , H01S5/343 , H01L27/15
CPC分类号： B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/34333
摘要： According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaN1−x−y−zAsxPySbz (0
摘要翻译：根据本发明的一个方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。阱层由包含In的氮化物半导体形成，并且阻挡层由含有As，P或Sb的氮化物半导体层形成。根据本发明的另一方面，氮化物半导体发光器件包括具有量子阱结构的发光层，其量子阱层和阻挡层交替层叠。阱层由GaN 1-xy-z x z z z z z z z z z z z z z z z z z 并且阻挡层由含有In的氮化物半导体形成。

29. 发明授权

US06614824B2 Nitride semiconductor laser device and optical device using the same 有权
公开(公告)号：US06614824B2
公开(公告)日：2003-09-02
申请号：US09950576
申请日：2001-09-13
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Toshiyuki Okumura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Toshiyuki Okumura
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/34333 , H01S2301/04
摘要： A nitride semiconductor laser device having a low threshold current and low noise is provided. The laser device includes n-type and p-type layers made of nitride semiconductor and formed on a substrate, and a light emitting layer between the n-type and p-type layers. The light emitting layer is formed of a well layer or a combination of well and barrier layers. At least the well layer is made of nitride semiconductor containing element X, N and Ga, wherein element is at least one selected from the group consisting of As, P and Sb. The atomic fraction of element X is smaller than that of N. A maximum width through which current is injected into the light emitting layer via the p-type layer is from 1.0 &mgr;m to 4.0 &mgr;m.

30. 发明授权

US06891189B2 Nitride semiconductor laser device and optical pickup apparatus therewith 有权
标题翻译：氮化物半导体激光装置及其光拾取装置
公开(公告)号：US06891189B2
公开(公告)日：2005-05-10
申请号：US10616767
申请日：2003-07-09
申请人： Shigetoshi Ito , Yuhzoh Tsuda
发明人： Shigetoshi Ito , Yuhzoh Tsuda
IPC分类号： G11B7/125 , H01S5/22 , H01S5/323 , H01S5/343 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01S5/22 , H01S5/2205 , H01S5/32341
摘要： A nitride semiconductor laser device includes a nitride semiconductor substrate, and a layered portion corresponding to a nitride semiconductor film grown on the nitride semiconductor substrate, the layered portion including an n-type layer and a p-type layer and a light emitting layer posed between the n- and p-type layers, of the n- and p-type layers a layer opposite to the nitride semiconductor substrate with the light emitting layer opposed therebetween serving as an upper layer having a stripe of 1.9 μm to 3.0 μn in width, the light emitting layer and the upper layer having an interface distant from a bottom of the stripe by 0 μm to 0.2 μm.
摘要翻译：氮化物半导体激光器件包括氮化物半导体衬底和对应于在氮化物半导体衬底上生长的氮化物半导体膜的层叠部分，所述层叠部分包括n型层和p型层以及位于 n型和p型层的n型和p型层与氮化物半导体衬底相对的层，其间具有与之相对的发光层用作具有1.9μm至3.0mb宽的条纹的上层，发光层和上层具有距离条纹的底部0μm至0.2μm的界面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式