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21. 发明申请

US20130058161A1 MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US20130058161A1
公开(公告)日：2013-03-07
申请号：US13423700
申请日：2012-03-19
申请人： Takaya YAMANAKA , Susumu SHUTO , Yoshiaki ASAO
发明人： Takaya YAMANAKA , Susumu SHUTO , Yoshiaki ASAO
IPC分类号： G11C11/15 , H01L21/8246
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.
摘要翻译：根据一个实施例，存储器件包括：第一信号线; 第二信号线; 晶体管第一存储区; 和第二存储器区域。晶体管控制在第一和第二信号线之间流动的电流和相反电流的导通。第一存储区具有第一磁隧道结元件。当电流沿一个方向流动时，其磁化方向变得平行，并且当另一个方向上的电流时，磁化方向变得反平行。第二存储器区域具有第二磁性隧道结元件。当电流沿一个方向流动时，其磁化方向变得平行，并且当电流在另一个第一方向上流动时，其磁化方向变得反平行。

22. 发明申请

US20100238718A1 SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20100238718A1
公开(公告)日：2010-09-23
申请号：US12727076
申请日：2010-03-18
申请人： Yoshiaki ASAO
发明人： Yoshiaki ASAO
IPC分类号： G11C11/00 , H01L29/78
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： A semiconductor memory device includes a semiconductor substrate including an active area, a first select transistor in the active area, a first interconnection layer above the semiconductor substrate configured to run in a first direction, a first magnetoresistive element above the first interconnection layer including a fixed layer having a fixed magnetization direction, a nonmagnetic layer on the fixed layer, and a recording layer on the nonmagnetic layer having a variable magnetization direction, the fixed layer being electrically connected to the first interconnection layer, the recording layer being electrically connected to a first diffusion region of the first select transistor, and a second interconnection layer configured to run in the first direction and electrically connected to a second diffusion region of the first select transistor.
摘要翻译：一种半导体存储器件，包括：半导体衬底，包括有源区，有源区中的第一选择晶体管，配置成在第一方向上延伸的半导体衬底上的第一互连层，第一互连层上方的第一磁阻元件，具有固定磁化方向的层，固定层上的非磁性层和具有可变磁化方向的非磁性层上的记录层，固定层电连接到第一互连层，记录层电连接到第一所述第一选择晶体管的扩散区域以及配置为在所述第一方向上延伸并且电连接到所述第一选择晶体管的第二扩散区域的第二互连层。

23. 发明申请

US20080203503A1 MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20080203503A1
公开(公告)日：2008-08-28
申请号：US12022473
申请日：2008-01-30
申请人： Yoshiaki ASAO
发明人： Yoshiaki ASAO
IPC分类号： H01L29/82
CPC分类号： H01L27/228
摘要： A magnetic random access memory includes a first bit line and a second bit line, a source line formed for a group having the first bit line and the second bit line, adjacent to the first bit line, and running in a first direction in which the first bit line and the second bit line run, a first magnetoresistive effect element connected to the first bit line, a second magnetoresistive effect element connected to the second bit line, a first transistor connected in series with the first magnetoresistive effect element, and a second transistor connected in series with the second magnetoresistive effect element. A first cell having the first magnetoresistive effect element and the first transistor and a second cell having the second magnetoresistive effect element and the second transistor are connected together to the source line.
摘要翻译：磁性随机存取存储器包括第一位线和第二位线，对于具有与第一位线相邻的第一位线和第二位线的组形成的源极线，并且沿第一方向运行，其中，第一位线和第二位线运行，连接到第一位线的第一磁阻效应元件，连接到第二位线的第二磁阻效应元件，与第一磁阻效应元件串联连接的第一晶体管，以及第二位线晶体管与第二磁阻效应元件串联连接。具有第一磁阻效应元件和第一晶体管的第一单元和具有第二磁阻效应元件和第二晶体管的第二单元连接在源极线上。

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