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    • 22. 发明授权
    • Organic/inorganic thin film deposition method
    • 有机/无机薄膜沉积法
    • US07799377B2
    • 2010-09-21
    • US11950606
    • 2007-12-05
    • Seong Deok AhnSeung Youl KangChul Am KimJi Young OhIn Kyu YouGi Heon KimKyu Ha BaekKyung Soo Suh
    • Seong Deok AhnSeung Youl KangChul Am KimJi Young OhIn Kyu YouGi Heon KimKyu Ha BaekKyung Soo Suh
    • C23C16/455
    • C23C16/45523B05D1/60C23C16/4408
    • Provided is a method for depositing an organic/inorganic thin film. The method includes: i) heating a source vessel containing an organic material and an inorganic material; ii) transferring a deposition gas to a process chamber; iii) distributing the deposition gas onto a substrate disposed in the process chamber; iv) purging the process chamber; v) heating an activating agent source vessel; vi) transferring a heat initiator gas phase to the process chamber; vii) distributing the heat initiator gas phase onto the organic or inorganic material monomer deposited on the substrate through the process chamber, and forming an organic/inorganic thin film; and viii) exhausting the heat initiator gas phase and purging the process chamber. Depositing the organic/inorganic thin film in a time-division manner, the thickness of the thin film can be accurately adjusted and the deposition can be uniformly performed when the thin film is deposited on a large-scale substrate.
    • 提供一种沉积有机/无机薄膜的方法。 该方法包括:i)加热含有机材料和无机材料的源容器; ii)将沉积气体转移到处理室; iii)将沉积气体分配到设置在处理室中的基板上; iv)清洗处理室; v)加热活化剂源容器; vi)将热引发剂气相转移到所述处理室; vii)通过处理室将热引发剂气相分配到沉积在基材上的有机或无机材料单体上,形成有机/无机薄膜; 和viii)排出热引发剂气相并清洗处理室。 以时分方式沉积有机/无机薄膜,可以精确地调节薄膜的厚度,并且当薄膜沉积在大型基底上时能够均匀地进行沉积。
    • 24. 发明授权
    • Method of fabricating bottom gate type organic thin film transistor
    • 底栅型有机薄膜晶体管的制造方法
    • US07459337B2
    • 2008-12-02
    • US11009831
    • 2004-12-10
    • Seung Youl KangSeongdeok AhnChul Am KimMeyoung Ju JoungKyung Soo Suh
    • Seung Youl KangSeongdeok AhnChul Am KimMeyoung Ju JoungKyung Soo Suh
    • H01L51/40
    • H01L51/0545H01L51/0018H01L51/0036H01L51/0055H01L51/0068
    • A method of fabricating a bottom gate type organic thin film transistor is provided. The method includes the acts of: forming a gate conductive layer pattern on a substrate; forming a gate insulating layer on an exposed portion of the surface of the substrate and the gate conductive layer pattern; forming source/drain electrodes on the gate insulating layer to expose a portion of the surface of the gate insulating layer above on the gate conductive layer pattern; forming an organic semiconductor thin film on the exposed portion of the gate insulating layer; forming on the organic semiconductor thin film a passivation layer pattern exposing a portion of the surface of the organic semiconductor thin film; and forming an organic semiconductor thin film pattern by etching the exposed surface of the organic semiconductor thin film using the passivation layer pattern as an etch mask.
    • 提供一种制造底栅型有机薄膜晶体管的方法。 该方法包括以下动作:在基板上形成栅极导电层图案; 在所述衬底的表面和所述栅极导电层图案的暴露部分上形成栅极绝缘层; 在所述栅极绝缘层上形成源极/漏极,以在所述栅极导电层图案上露出所述栅极绝缘层的表面的一部分; 在所述栅极绝缘层的暴露部分上形成有机半导体薄膜; 在所述有机半导体薄膜上形成暴露所述有机半导体薄膜表面的一部分的钝化层图案; 以及通过使用钝化层图案作为蚀刻掩模蚀刻有机半导体薄膜的暴露表面来形成有机半导体薄膜图案。