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21. 发明申请

US20070126804A1 Thermal inkjet printhead 有权
标题翻译：热喷墨打印头
公开(公告)号：US20070126804A1
公开(公告)日：2007-06-07
申请号：US11483721
申请日：2006-07-11
申请人： Dong-sik Shim , Hyung Choi , Yong-seop Yoon , Chang-seung Lee
发明人： Dong-sik Shim , Hyung Choi , Yong-seop Yoon , Chang-seung Lee
IPC分类号： B41J2/045
CPC分类号： B41J2/14129 , B41J2/1408
摘要： Provided is a thermal inkjet printhead. The inkjet printhead includes a substrate; an insulating layer formed on the substrate; a heater formed on the insulating layer and an electrode to apply current to the heater; a chamber layer that is stacked on the insulating layer and includes an ink chamber; a nozzle layer that is stacked on the chamber layer and includes a nozzle; and at least a heat transfer layer that is formed inside the insulating layer and dissipates heat generated in by the heater toward the substrate.
摘要翻译：提供了热喷墨打印头。喷墨打印头包括基板; 形成在所述基板上的绝缘层; 形成在绝缘层上的加热器和用于向加热器施加电流的电极; 层叠在所述绝缘层上并且包括墨水室的室层; 喷嘴层，其层叠在所述室层上并且包括喷嘴; 以及形成在所述绝缘层内部的至少一层传热层，并且将由所述加热器产生的热量散发到所述基板。

22. 发明授权

US07416675B2 Method of fabricating inkjet print heads 有权
标题翻译：制造喷墨打印头的方法
公开(公告)号：US07416675B2
公开(公告)日：2008-08-26
申请号：US11453012
申请日：2006-06-15
申请人： Dong-sik Shim , Hyung Choi , Yong-seop Yoon
发明人： Dong-sik Shim , Hyung Choi , Yong-seop Yoon
IPC分类号： G01D15/00
CPC分类号： B41J2/1603 , B41J2/1626 , B41J2/1635 , B41J2/1639 , B41J2/1643
摘要： A method of fabricating inkjet print heads usable in an ink jet printer. The method of fabricating ink jet print heads includes preparing a plurality of ink jet print heads on a wafer while forming sub sidewalls around the ink jet print heads when the ink jet print heads are being prepared, attaching protection films onto the sub sidewalls of the wafer and the ink jet print heads, and dicing the ink jet print heads and detaching the individual ink jet print heads from the wafer. In the method, the ink jet print heads are diced in a wafer unit. Particularly, connect pads of the ink jet print heads can be prevented from being contaminated by the protection films.
摘要翻译：一种制造可用于喷墨打印机的喷墨打印头的方法。制造喷墨打印头的方法包括：当准备喷墨打印头时，在晶片上准备多个喷墨打印头，同时在喷墨打印头周围形成副侧壁，将保护膜附着在晶片的子侧壁上和喷墨打印头，并且对喷墨打印头进行切割并将各个喷墨打印头从晶片上分离出来。在该方法中，喷墨打印头在晶片单元中切割。特别地，可以防止喷墨打印头的连接垫被保护膜污染。

23. 发明授权

US07189638B2 Method for manufacturing metal structure using trench 有权
标题翻译：使用沟槽制造金属结构的方法
公开(公告)号：US07189638B2
公开(公告)日：2007-03-13
申请号：US10739578
申请日：2003-12-19
申请人： Dong-sik Shim , Kyung-won Na , Sang-on Choi , Hae-seok Park
发明人： Dong-sik Shim , Kyung-won Na , Sang-on Choi , Hae-seok Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/76879
摘要： A method for manufacturing a metal structure using a trench includes etching a semiconductor substrate to form a trench, depositing a seed layer over the semiconductor substrate including in the trench, stacking an insulating layer over the seed layer, removing a portion of the insulating layer to expose a portion of the seed layer at a bottom of the trench, filling the trench with a metal material, and removing the seed layer and the insulating layer on the semiconductor substrate. As a result, a subsequent process in forming a multi-layered structure may be easily carried out, thereby simplifying a manufacturing process.
摘要翻译：使用沟槽制造金属结构的方法包括蚀刻半导体衬底以形成沟槽，在包括沟槽中的半导体衬底上沉积晶种层，在种子层上堆叠绝缘层，去除绝缘层的一部分在沟槽的底部露出种子层的一部分，用金属材料填充沟槽，以及去除半导体衬底上的晶种层和绝缘层。结果，可以容易地进行形成多层结构的后续处理，从而简化制造过程。

24. 发明授权

US07071688B2 Magnetic field sensing device and method for fabricating thereof 有权
公开(公告)号：US07071688B2
公开(公告)日：2006-07-04
申请号：US10773456
申请日：2004-02-09
申请人： Hae-seok Park , Kyung-won Na , Dong-sik Shim , Sang-on Choi
发明人： Hae-seok Park , Kyung-won Na , Dong-sik Shim , Sang-on Choi
IPC分类号： G01R33/02
CPC分类号： G01R33/02
摘要： Disclosed is a magnetic field sensor of high sensitivity, and which is power-saving and can be manufactured with low cost in a very small size. The magnetic field sensor includes a soft magnetic core formed to construct a closed-magnetic circuit on a semiconductor substrate, a magnetic field sensing coil formed by a metal film in a shape that winds the soft magnetic core, and a drive line for exciting the soft magnetic core by directly applying an electric current thereto. The drive line is formed in a rectangular angle to the magnetic field sensing coil, and connected to the both ends of the soft magnetic core in a length direction.

25. 发明申请

US20050136636A1 Method for manufacturing metal structure having different heights 有权
标题翻译：具有不同高度的金属结构的制造方法
公开(公告)号：US20050136636A1
公开(公告)日：2005-06-23
申请号：US11012312
申请日：2004-12-16
申请人： Dong-sik Shim , Chan-bong Jun , Hyung Choi , Hoon Song
发明人： Dong-sik Shim , Chan-bong Jun , Hyung Choi , Hoon Song
IPC分类号： H01L21/288 , C25D7/12 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/44
CPC分类号： H01L21/76885 , H01L21/2885 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/0603 , H01L2224/13099 , H01L2224/1403 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01078 , H01L2924/181 , H01L2924/00
摘要： Disclosed is a method for forming a plurality of metal structures having different heights on a semiconductor substrate. The disclosed method for manufacturing a metal structure having different heights includes: forming a plurality of seed layers, to have heights corresponding to the metal structure to be formed, on a semiconductor substrate so that those layers can be electrically separated, performing a plating process using a plating mold, and applying different currents to the respective seed layers so that the plating thickness can be adjusted for each of the seed layers. Accordingly, a plurality of metal structures having different heights can be obtained by a plating mold forming process and a plating process that are performed just once, respectively.
摘要翻译：公开了一种在半导体衬底上形成具有不同高度的多个金属结构体的方法。所公开的制造具有不同高度的金属结构体的方法包括：在半导体衬底上形成多个种子层以具有与要形成的金属结构相对应的高度，使得这些层可以电分离，使用电镀模具，并且向相应的种子层施加不同的电流，使得可以针对每个种子层调整镀层厚度。因此，可以通过分别进行一次的电镀模具成型工序和电镀工序来获得具有不同高度的多个金属结构体。

26. 发明授权

US07893442B2 Schottky diode having low breakdown voltage and method for fabricating the same 有权
标题翻译：具有低击穿电压的肖特基二极管及其制造方法
公开(公告)号：US07893442B2
公开(公告)日：2011-02-22
申请号：US11702489
申请日：2007-02-06
申请人： Dong-sik Shim , Hyung Choi , Young-hoon Min
发明人： Dong-sik Shim , Hyung Choi , Young-hoon Min
IPC分类号： H01L29/15 , H01L29/66 , H01L21/44 , H01L21/28
CPC分类号： H01L29/872 , H01L29/417
摘要： Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.
摘要翻译：提供了在射频识别（RFID）标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底，围绕N型阱的周围的绝缘层，以将N型阱与 P型衬底，部分地形成在N型阱的上表面的一部分区域中的N +掺杂层，部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层，类型良好，形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

27. 发明授权

US07703891B2 Heater to control bubble and inkjet printhead having the heater 有权
标题翻译：加热器控制具有加热器的气泡和喷墨打印头
公开(公告)号：US07703891B2
公开(公告)日：2010-04-27
申请号：US11471490
申请日：2006-06-21
申请人： Dong-sik Shim , Hyung Choi , Min-soo Kim
发明人： Dong-sik Shim , Hyung Choi , Min-soo Kim
IPC分类号： B41J2/05
CPC分类号： B41J2/14129 , B41J2/1412
摘要： A heater to control an ink bubble, and an inkjet printhead having the heater. The heater has different resistances according to portions thereof.
摘要翻译：用于控制墨水泡的加热器和具有加热器的喷墨打印头。加热器根据其部分具有不同的电阻。

28. 发明申请

US20070278608A1 Schottky diode having low breakdown voltage and method for fabricating the same 有权
标题翻译：具有低击穿电压的肖特基二极管及其制造方法
公开(公告)号：US20070278608A1
公开(公告)日：2007-12-06
申请号：US11702489
申请日：2007-02-06
申请人： Dong-sik Shim , Hyung Choi , Young-hoon Min
发明人： Dong-sik Shim , Hyung Choi , Young-hoon Min
IPC分类号： H01L29/861 , H01L21/44
CPC分类号： H01L29/872 , H01L29/417
摘要： Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.
摘要翻译：提供了在射频识别（RFID）标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底，围绕N型阱的周围的绝缘层，以将N型阱与 P型衬底，部分地形成在N型阱的上表面的一部分区域中的N +掺杂层，部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层，类型良好，形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

29. 发明申请

US20060060847A1 Silicon-insulator-silicon structure and method for fabricating the same 审中-公开
标题翻译：硅绝缘体硅结构及其制造方法
公开(公告)号：US20060060847A1
公开(公告)日：2006-03-23
申请号：US11228225
申请日：2005-09-19
申请人： Dong-sik Shim
发明人： Dong-sik Shim
IPC分类号： H01L29/06 , H01L21/461
CPC分类号： H01L21/7624 , H01L21/3065
摘要： A silicon-insulator-silicon structure with an insulator having a plurality of openings and a method for fabricating the same are provided. The silicon-insulator-silicon structure includes a lower silicon layer; an insulator formed on the lower silicon layer and having a plurality of openings; and an upper silicon layer formed on the insulator and etched at its predetermined region, wherein the opening of the insulator allows a material used for etching the upper silicon layer at its predetermined region, to move to the lower silicon layer. Accordingly, the silicon-insulator-silicon structure can provide the opening in the insulator, thereby not only preventing the upper silicon layer from being notched when the upper silicon layer is etched, but also relieving the stress of the silicon-insulator-silicon structure.
摘要翻译：提供了具有多个开口的绝缘体的硅 - 绝缘体 - 硅结构及其制造方法。硅绝缘体硅结构包括下硅层; 形成在下硅层上并具有多个开口的绝缘体; 以及形成在绝缘体上并在其预定区域被蚀刻的上硅层，其中绝缘体的开口允许用于在其预定区域蚀刻上硅层的材料移动到下硅层。因此，硅 - 绝缘体 - 硅结构可以在绝缘体中提供开口，从而不仅防止了上硅层被蚀刻时上硅层被切口，而且还缓解了硅 - 绝缘体 - 硅结构的应力。

30. 发明申请

US20050035761A1 Fluxgate sensor integrated in a semiconductor substrate and method for manufacturing the same 有权
标题翻译：集成在半导体衬底中的磁通门传感器及其制造方法
公开(公告)号：US20050035761A1
公开(公告)日：2005-02-17
申请号：US10763394
申请日：2004-01-26
申请人： Hae-seok Park , Dong-sik Shim , Sang-on Choi , Kyung-won Na
发明人： Hae-seok Park , Dong-sik Shim , Sang-on Choi , Kyung-won Na
IPC分类号： G01R33/02 , G01R33/04 , G01R33/05 , H01L43/02
CPC分类号： G01R33/04 , G01R15/185 , G01R33/05
摘要： In a fluxgate sensor integrated in a semiconductor substrate and a method for manufacturing the same, the fluxgate sensor includes a soft magnetic core formed on the semiconductor substrate, an excitation coil winding the soft magnetic core and being insulated by first and second insulating layers deposited above and below the soft magnetic core, respectively, and a pick-up coil, winding the soft magnetic core and being insulated by third and fourth insulating layers deposited above and below the excitation coil, respectively.
摘要翻译：在集成在半导体衬底中的磁通门传感器及其制造方法中，磁通门传感器包括形成在半导体衬底上的软磁芯，缠绕软磁芯的励磁线圈，并由上述第一和第二绝缘层绝缘并且分别在软磁芯和拾取线圈之下，缠绕软磁芯并且分别由激励线圈上方和下方沉积的第三绝缘层和第四绝缘层绝缘。

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