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    • 30. 发明申请
    • Thin film diode panel for trans-reflective liquid crystal display
    • 薄膜二极管面板用于反射式液晶显示
    • US20070080344A1
    • 2007-04-12
    • US10578029
    • 2004-10-29
    • Jin-Hong KimChong-Chul ChaiKyoung-Ju ShinJoon-Hak OhSung-Jin Hong
    • Jin-Hong KimChong-Chul ChaiKyoung-Ju ShinJoon-Hak OhSung-Jin Hong
    • H01L29/08H01L51/00
    • G02F1/133555G02F1/13624G02F1/1365
    • A thin film diode panel has a insulating substrate, a first and second gate lines (121, 122) formed on the insulating substrate, a reflection electrode (190a) and a transmission electrode (190b) formed on the insulating substrate, A first MIM diode (D1) is formed on the insulating substrate and connected to the first gate line (121) and the reflection electrode (190a). A second MIM diode (D2) is formed on the insulating substrate and connected to the second gate line (122) and the reflection electrode (190a). A third MIM diode (D1) is formed on the insulating substrate and connecting the first gate line (121) and the transmission electrode (190b). A fourth MIM diode (D21) is formed on the insulating substrate and connecting the second gate line (122) and the transmission electrode (190b). At least one of the first to fourth MIM diodes has a substantially different current-voltage (I-V) characteristic from the others.
    • 薄膜二极管面板具有绝缘基板,形成在绝缘基板上的第一和第二栅极线(121,122),形成在绝缘基板上的反射电极(190a)和透射电极(190b),第一 MIM绝缘二极管(D 1)形成在绝缘基板上并与第一栅极线(121)和反射电极(190a)连接。 第二MIM二极管(D 2)形成在绝缘基板上并连接到第二栅极线(122)和反射电极(190a)。 第三MIM二极管(D 1)形成在绝缘基板上并连接第一栅极线(121)和透射电极(190b)。 第四MIM二极管(D21)形成在绝缘基板上并连接第二栅极线(122)和透射电极(190b)。 第一至第四MIM二极管中的至少一个具有与其他MIM电流电压(I-V)特性相当大的不同。