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21. 发明申请

US20080205879A1 Opening and Closing Apparatus For Small Image Photographing Devices 审中-公开
标题翻译：小图像拍摄装置的打开和关闭装置
公开(公告)号：US20080205879A1
公开(公告)日：2008-08-28
申请号：US11994902
申请日：2006-04-21
申请人： Jae-Young Park
发明人： Jae-Young Park
IPC分类号： G03B9/20 , G03B9/08
CPC分类号： H04N5/2254 , G03B15/02
摘要： Disclosed is a shutter apparatus for small cameras. According to the first embodiment of the invention, a shutter housing is mounted in an exposure aperture formed in a main body. The shutter housing has a through-hole communicated with the exposure aperture. A shutter panel is pivotably mounted inside the shutter housing so as to open and close the through-hole. A pivot lever is rotatably installed inside the shutter housing and engaged with the shutter panel such that the shutter panel is pivoted to open and close the through-hole. Thus, the opening is opened only when the camera is used to take a picture, and otherwise the opening is closed, thereby efficiently preventing introduction of foreign matters into the inside of the camera.
摘要翻译：公开了一种小型照相机的快门装置。根据本发明的第一实施例，在主体中形成的曝光孔中安装有挡板外壳。闸门壳体具有与曝光孔连通的通孔。快门面板可枢转地安装在活门壳体的内部，以便打开和关闭通孔。枢转杠杆可旋转地安装在闸门壳体内部并与挡板面板接合，使得挡板面板枢转以打开和关闭通孔。因此，仅当照相机用于拍摄照片时才打开开口，否则打开关闭，从而有效地防止异物进入照相机的内部。

22. 发明授权

US07248851B2 Method for controlling routing information for intellectual peripherals in subscriber-based ring-back-tone-service 有权
标题翻译：用于基于用户的回铃音服务中智能外设路由信息的控制方法
公开(公告)号：US07248851B2
公开(公告)日：2007-07-24
申请号：US10525922
申请日：2003-08-07
申请人： Sang-Yoen Lee , Hee-Hyuk Ham , Ki-Moon Kim , Young-Tae Noh , Jae-Young Park
发明人： Sang-Yoen Lee , Hee-Hyuk Ham , Ki-Moon Kim , Young-Tae Noh , Jae-Young Park
IPC分类号： H04M9/00 , H04M3/42 , H04B1/38
CPC分类号： H04M3/42102 , H04M3/42017 , H04M2207/18 , H04W4/12 , H04W8/04 , H04W8/18 , H04W40/00 , H04W60/00 , H04W76/10 , H04W80/00 , H04W88/14 , H04W92/02 , H04W92/24
摘要： A method for controlling routing information for intellectual peripherals (IPs) in a subscriber-based ring-back-tone service. The routing information to be routed to IPs (50) corresponding to subscribers is classified on a subscriber telephone number-by-number basis, a subscriber telephone office number-by-number basis, a subscriber telephone office number group-by-group basis or a subscriber's major activity area-by-area basis according to a selection. The classified routing information is set and registered in a home location register (HLR) (10). When the HLR (10) receives a location registration request message from a terminal of an arbitrary subscriber, a corresponding routing information item to be routed to an IP (50) corresponding to the subscriber's terminal among the classified, set and registered routing information is contained within a response message to the location registration request message, and the response message is provided to a terminating mobile switching center (T MSC) (32).
摘要翻译：一种在基于用户的回铃音服务中控制智能外设（IP）的路由信息的方法。要路由到与用户相对应的IP（50）的路由信息按用户电话号码分类，逐个用户电话号码，逐个用户电话号码或者根据选择，用户的主要活动逐区。分类路由信息被设置并登记在归属位置寄存器（HLR）（10）中。当HLR（10）从任意用户的终端接收到位置注册请求消息时，将包含要分配，设置和登记的路由信息中的对应于用户终端的IP（50）的相应路由选择信息项目在到位置登记请求消息的响应消息内，向终端移动交换中心（T MSC）（32）提供响应消息。

23. 发明申请

US20070022941A1 Method of forming a layer and method of manufacturing a semiconductor device using the same 审中-公开
标题翻译：形成层的方法和使用其制造半导体器件的方法
公开(公告)号：US20070022941A1
公开(公告)日：2007-02-01
申请号：US11494566
申请日：2006-07-28
申请人： Jae-Young Park , Young-Jin Kim , Yong-Woo Hyung , Seok-Woo Nam , Kyoung-Seok Kim , Wook-Yeol Yi , Hun-Hyeoung Leam , Kong-Soo Lee , Ko-Eun Lee
发明人： Jae-Young Park , Young-Jin Kim , Yong-Woo Hyung , Seok-Woo Nam , Kyoung-Seok Kim , Wook-Yeol Yi , Hun-Hyeoung Leam , Kong-Soo Lee , Ko-Eun Lee
IPC分类号： C30B15/14
CPC分类号： C30B29/06 , C30B1/023
摘要： In a method of forming a layer having a lower electrical resistance and a method of manufacturing a semiconductor device, a first layer may be formed on a single crystalline substrate using amorphous silicon doped with impurities. A heat treatment may be performed on the single crystalline substrate at a temperature of about 550° C. to about 600° C. to convert the first layer into a second layer including a single crystalline silicon film transformed from a lower portion of the first layer contacting the single crystalline substrate and a polysilicon film transformed from an upper portion of the first layer. The layer may be formed at a relatively low temperature by a selective epitaxial growth process, and thus degradation or damage to a semiconductor device, which may be generated in a high temperature process, may be reduced.
摘要翻译：在形成具有较低电阻的层的方法和制造半导体器件的方法中，可以使用掺杂有杂质的非晶硅在单晶衬底上形成第一层。可以在约550℃至约600℃的温度下对单晶衬底进行热处理，以将第一层转变成第二层，该第二层包括从第一层的下部变换的单晶硅膜使所述单晶衬底和从所述第一层的上部变换的多晶硅膜接触。可以通过选择性外延生长工艺在相对低的温度下形成该层，从而可以降低在高温过程中可能产生的对半导体器件的劣化或损坏。

24. 发明申请

US20050207555A1 Method and apparatus for managing presenting and changing ring-back sounds in subscriber-based ring-back sound service 有权
标题翻译：在基于用户的回铃声服务中管理呈现和改变回铃声的方法和装置
公开(公告)号：US20050207555A1
公开(公告)日：2005-09-22
申请号：US10524098
申请日：2003-08-07
申请人： Sang-Yoen Lee , Hee-Hyuk Ham , Ki-Moon Kim , Young-Tae Noh , Jae-Young Park
发明人： Sang-Yoen Lee , Hee-Hyuk Ham , Ki-Moon Kim , Young-Tae Noh , Jae-Young Park
IPC分类号： H04M3/36 , H04M3/42 , H04Q7/22 , H04Q7/32
CPC分类号： H04M3/42017 , H04M3/36
摘要： Disclosed herein is a method and apparatus for managing ring-back sounds in a subscriber-based ring-back sound service. The method includes the first step of storing common ring-back sounds and reporting details of use of the common ring-back sounds, the second step of storing individual ring-back sounds and reporting details of use of the individual ring-back sounds, and the third step of statistically compiling the reported details of use and determining whether to maintain storage of the ring-back sounds based up the statistically complied details. A method and apparatus for presenting and changing ring-back sounds based upon the ring-back sound managing method and apparatus are provided.
摘要翻译：本文公开了一种用于在基于用户的回铃声服务中管理回铃声的方法和装置。该方法包括存储公共回铃声和报告使用公共回铃声的细节的第一步骤，存储各个回铃声的第二步骤和报告使用各个回铃声的细节，以及统计编辑所报告的使用细节的第三步，并根据统计上的细节确定是否保持回铃声的存储。提供了一种基于回铃声管理方法和装置呈现和改变回铃声的方法和装置。

25. 发明授权

US6128044A Automatic wide screen display method and apparatus for a TV set 失效
标题翻译：电视机的自动宽屏显示方法及装置
公开(公告)号：US6128044A
公开(公告)日：2000-10-03
申请号：US912479
申请日：1997-08-18
申请人： Jae-Young Park
发明人： Jae-Young Park
IPC分类号： H04N5/46 , H04N7/025 , H04N7/03 , H04N7/035
CPC分类号： H04N7/0122
摘要： An automatic wide screen display apparatus and method of a TV set according to the present invention determine the presence of a wide screen video signal and detect an aspect ratio data of an inputted video signal based on the determination using a vertical synchronizing signal. The apparatus and method further perform communications using a protocol defined between a main microcomputer for controlling the screen deflection and an exclusive wide screen microcomputer for detecting the aspect ratio of the inputted video signal in order to automatically display the wide screen image in accordance with the inputted video signal, and control an integrated deflection device in accordance with the communication result to control the screen deflection.
摘要翻译：根据本发明的电视机的自动宽屏显示装置和方法基于使用垂直同步信号的确定来确定宽屏幕视频信号的存在并检测输入的视频信号的宽高比数据。该装置和方法还使用在用于控制屏幕偏转的主微型计算机之间定义的协议和用于检测输入的视频信号的宽高比的专用宽屏微型计算机进行通信，以便根据所输入的自动显示宽屏幕图像视频信号，并根据通信结果控制集成偏转装置，以控制屏幕偏转。

26. 发明授权

US09329729B2 Touch panel and touch screen having the same 有权
标题翻译：具有相同触摸面板和触摸屏
公开(公告)号：US09329729B2
公开(公告)日：2016-05-03
申请号：US13418891
申请日：2012-03-13
申请人： Jin-Han Kim , Yeong-Seop Lee , Seok-Hong Jeong , Myung-Sop Lee , Kyoung-Suk Oh , Jung-Hun Woo , Dong-Chul Lee , Jong-Hyun Yim , Sung-Il Jang , Yong-Gu Cho , Hyoung-Jun Go , Kyoung-Hun Kim , Jeong-Eun Kim , Hyeon-Beom Kim , Dae-Bin Noh , Jae-Young Park , Eun-Jin Baek , Chung-Hee Lee , Sung-Ho Jung , Jae-Wook Cho
发明人： Jin-Han Kim , Yeong-Seop Lee , Seok-Hong Jeong , Myung-Sop Lee , Kyoung-Suk Oh , Jung-Hun Woo , Dong-Chul Lee , Jong-Hyun Yim , Sung-Il Jang , Yong-Gu Cho , Hyoung-Jun Go , Kyoung-Hun Kim , Jeong-Eun Kim , Hyeon-Beom Kim , Dae-Bin Noh , Jae-Young Park , Eun-Jin Baek , Chung-Hee Lee , Sung-Ho Jung , Jae-Wook Cho
IPC分类号： G06F3/045 , G06F3/044
CPC分类号： G06F3/044
摘要： Provided herein is a capacitive-type touch panel. The capacitive-type touch panel may include a first transparent substrate, a first conductive layer positioned on the first transparent substrate, a sensor layer having a second conductive layer spaced from the first conductive layer by a spacer, and a second transparent substrate positioned on the sensor layer. The first conductive layer and the second conductive layer may be transparent.
摘要翻译：这里提供了电容式触摸面板。电容型触摸面板可以包括第一透明衬底，位于第一透明衬底上的第一导电层，具有通过间隔物与第一导电层隔开的第二导电层的传感器层和位于第一透明衬底上的第二透明衬底传感器层。第一导电层和第二导电层可以是透明的。

27. 发明授权

US08759182B2 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08759182B2
公开(公告)日：2014-06-24
申请号：US13459740
申请日：2012-04-30
申请人： Hyun-Jun Sim , Jae-Young Park , Hyun-Seung Kim , Sang-Bom Kang , Sun-Ghil Lee , Hyun-Deok Yang , Kang-Hun Moon , Han-Ki Lee , Sang-Mi Choi
发明人： Hyun-Jun Sim , Jae-Young Park , Hyun-Seung Kim , Sang-Bom Kang , Sun-Ghil Lee , Hyun-Deok Yang , Kang-Hun Moon , Han-Ki Lee , Sang-Mi Choi
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L21/28185 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A semiconductor device having an improved negative bias temperature instability lifetime characteristic is manufactured by forming a first insulating layer on a substrate, performing a first nitridation on the first insulating layer to form a second insulating layer, and sequentially performing a first and second anneal on the second insulating layer to form a third insulating layer, wherein the second anneal is performed at a higher temperature and with a different gas than the first anneal. A second nitridation is performed on the third insulating layer to form a fourth insulating layer, and a sequential third and fourth anneal on the fourth insulating layer forms a fifth insulating layer. The third anneal is performed at a higher temperature than the first anneal, and the fourth anneal is performed at a higher temperature than the second anneal and with a different gas than the third anneal.
摘要翻译：通过在基板上形成第一绝缘层，在第一绝缘层上进行第一次氮化，形成第二绝缘层，依次进行第一和第二退火，制造具有改善的负偏压温度不稳定寿命特性的半导体器件第二绝缘层以形成第三绝缘层，其中所述第二退火在比所述第一退火更高的温度和不同的气体下进行。在第三绝缘层上进行第二次氮化，以形成第四绝缘层，并且在第四绝缘层上顺序的第三和第四退火形成第五绝缘层。第三退火在比第一退火更高的温度下进行，第四退火在比第二退火更高的温度下进行，并且具有比第三退火不同的气体。

28. 发明申请

US20130211024A1 METHOD FOR PREPARING OLEFIN-DIENE COPOLYMER USING TRANSITION METAL COMPOUND CONTAINING THIOPHENE-FUSED CYCLOPENTADIENYL LIGAND 有权
标题翻译：使用含有THIOPHENE-FUSED CYCLOPENTADIENYL LIGAND的过渡金属化合物制备烯烃二烯共聚物的方法
公开(公告)号：US20130211024A1
公开(公告)日：2013-08-15
申请号：US13640941
申请日：2011-04-12
申请人： Bun-Yeoul Lee , Ji-Hae Park , Seung-Hyun Do , Hwa-Kyu Kim , Jae-Young Park , Seung-Woong Yoon
发明人： Bun-Yeoul Lee , Ji-Hae Park , Seung-Hyun Do , Hwa-Kyu Kim , Jae-Young Park , Seung-Woong Yoon
IPC分类号： C08F236/04
CPC分类号： C07D409/04 , B01J31/0244 , C07F7/28 , C07F17/00 , C08F4/65908 , C08F4/65912 , C08F4/6592 , C08F4/76 , C08F10/00 , C08F10/02 , C08F210/16 , C08F236/04 , C08F2420/02 , C08F2420/06 , Y10S526/943 , C08F210/14 , C08F210/02 , C08F236/20 , C08F210/06 , C08F210/18 , C08F2500/25 , C08F232/08
摘要： The present invention relates to a preparation method for olefin-diene copolymer that comprises polymerizing at least one olefin-based monomer and at least one diene-based monomer in the presence of a catalyst comprising a novel transition metal compound. Using the novel transition metal compound as a catalyst, the preparation method for olefin-diene copolymer according to the present invention can not only acquire high catalytic activity for copolymerization of the olefin and diene monomers to achieve high process efficiency but allow it to easily control the fine-structure characteristics of the copolymer, thereby providing an olefin-diene copolymer having desired properties with ease.
摘要翻译：本发明涉及一种烯烃 - 二烯共聚物的制备方法，其包括在包含新型过渡金属化合物的催化剂的存在下聚合至少一种烯烃基单体和至少一种二烯类单体。使用新型过渡金属化合物作为催化剂，本发明的烯烃 - 二烯共聚物的制备方法不仅可以获得烯烃和二烯单体共聚的高催化活性，以达到高的工艺效率，而且可以容易地控制共聚物的精细结构特征，从而提供具有所需性质的烯烃 - 二烯共聚物。

29. 发明授权

US08369909B2 Sliding opening and closing device and a portable terminal having the same 有权
公开(公告)号：US08369909B2
公开(公告)日：2013-02-05
申请号：US12573774
申请日：2009-10-05
申请人： Jae-Young Park , Jun-Hong Lee , Chun-Soo Park
发明人： Jae-Young Park , Jun-Hong Lee , Chun-Soo Park
IPC分类号： H04M1/00
CPC分类号： H04M1/0237 , H04M1/0227 , H04M1/0233 , H04M1/0247
摘要： Disclosed are a sliding opening and closing device and a portable terminal having the same. According to the first embodiment of the present invention, a slide plate is linked to a main plate to be slidable in one direction. Also, the main plate supports an elastic part so as to generate an elasticity power in one direction. A power transformation member receives the elasticity power of the elastic member, and transmits the elasticity power to the slide plate in the direction of the opening or the closing according to the position of the slide plate.

30. 发明申请

US20110222207A1 Methods of forming a dielectric layer structure, and methods of manufacturing a capacitor using the same 审中-公开
标题翻译：形成电介质层结构的方法，以及使用其形成电容器的方法
公开(公告)号：US20110222207A1
公开(公告)日：2011-09-15
申请号：US13064241
申请日：2011-03-14
申请人： Tae-Jong Lee , Jae-Young Park , Jong-Bom Seo , Seok-Woo Nam , Bong-Hyun Kim , Han-Jin Lim , Seung-Sik Chung
发明人： Tae-Jong Lee , Jae-Young Park , Jong-Bom Seo , Seok-Woo Nam , Bong-Hyun Kim , Han-Jin Lim , Seung-Sik Chung
IPC分类号： H01G4/10 , H01G7/00 , B05D5/12
CPC分类号： H01G4/10 , C23C16/403 , C23C16/405 , C23C16/45529 , C23C16/56 , H01G13/00 , Y10T29/43
摘要： In a method of forming a dielectric layer structure, a precursor thin film chemisorbed on a substrate in a process chamber is formed using a source gas including a metal precursor. The process chamber is purged and pumped out to remove a remaining source gas therein and to remove any metal precursor physisorbed on the precursor thin film. The forming of the precursor thin film and the purging and pumping out of the process chamber are alternately and repeatedly performed to form a multi-layer precursor thin film. An oxidant is provided onto the multilayer precursor thin film to form a bulk oxide layer.
摘要翻译：在形成电介质层结构的方法中，使用包括金属前体的源气体来形成化学吸附在处理室中的衬底上的前体薄膜。将处理室吹扫并抽出以除去其中的剩余源气体并除去在前体薄膜上物理吸附的任何金属前体。交替地重复进行前体薄膜的形成和处理室的清洗和泵送，以形成多层前体薄膜。在多层前体薄膜上提供氧化剂以形成体氧化物层。

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