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    • 21. 发明授权
    • Piezoelectric single crystal and method of production of same, piezoelectric element, and dielectric element
    • 压电单晶及其制造方法,压电元件和介电元件
    • US08119022B2
    • 2012-02-21
    • US12092664
    • 2006-11-06
    • Ho-Yong LeeSung-Min LeeDong-Ho Kim
    • Ho-Yong LeeSung-Min LeeDong-Ho Kim
    • H01L41/18H01L41/00C04B35/00
    • C30B29/22C30B1/02C30B29/30C30B29/32H01L41/18
    • A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K3T, high piezoelectric constants (d33 and k33), high phase transition temperatures (Tc and TRT), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.
    • 提供了具有高介电常数K3T,高压电常数(d33和k33),高相变温度(Tc和TRT),高矫顽电场Ec和高矫顽电场Ec的压电单晶和压电和介电应用部件, 改进的机械性能,因此可以在高温范围和高电压条件下使用。 此外,压电单晶通过适合大量生产单晶的固态单晶生长产生,并且单晶组合物被开发成不含有昂贵的原料,使得压电单晶易于商业化。 使用压电单晶和压电单晶应用部件,可以在宽的温度范围内制造使用具有优异性能的压电单晶的压电和电介质应用部件。
    • 23. 发明授权
    • Method of reflowing a semiconductor device
    • 回流半导体器件的方法
    • US5268333A
    • 1993-12-07
    • US772870
    • 1991-10-08
    • Sung-Min LeeYoo-suck Jung
    • Sung-Min LeeYoo-suck Jung
    • H01L21/3205H01L21/3105H01L21/311H01L21/316H01L21/768H01L23/532H01L21/02
    • H01L21/02274H01L21/02129H01L21/022H01L21/3105H01L21/31051H01L21/31116H01L21/31625H01L21/76819H01L23/5329H01L23/53295H01L2924/0002Y10S148/133
    • A method of reflowing a semiconductor device to increase the planarization thereof includes the steps of first forming a first insulating layer over a silicon semiconductor substrate, forming at least one electrode over the first insulating layer, and then forming a second insulating layer over the at least one electrode and the first insulating layer. A first borophospho silicate glass (BPSG) layer of low concentration is then formed over the resultant surface to a thickness of 6000 to 9000 .ANG. and containing 3-4 wt. % boron and 5-7 wt. % phosphorous. A second borophospho silicate glass (BPSG) layer of high concentration is formed over the resultant surface of the first borophospho silicate glass (BPSG) layer to a thickness of 2000 to 6000 .ANG. and containing 4-7 wt. % boron and 8-10 wt. % phosphorous. This resultant structure is then exposed to a reflowing process so as to flatten the respective surfaces of the first and second borophospho silicate glass (BPSG) layers to form a planarized resultant structure which is then etched. The use of two different concentrations of BPSG films permits lowering baking temperatures during the reflow process by as much as 50.degree. C. while preventing the corrosive forming properties of the resultant reflowed BPSG film.
    • 回流半导体器件以增加其平坦化的方法包括以下步骤:首先在硅半导体衬底上形成第一绝缘层,在第一绝缘层上形成至少一个电极,然后至少在第一绝缘层上形成第二绝缘层 一个电极和第一绝缘层。 然后在所得表面上形成低浓度的第一种硼磷硅酸盐玻璃(BPSG)层,其厚度为6000至9000,含有3-4wt。 %硼和5-7wt。 %磷。 在第一硼磷硅酸盐玻璃(BPSG)层的所得表面上形成高浓度的第二硼磷硅酸盐玻璃(BPSG)层,其厚度为2000-6000,含有4-7wt。 %硼和8-10wt。 %磷。 然后将所得结构暴露于回流工艺,以使第一和第二硼磷硅酸盐玻璃(BPSG)层的各个表面变平,以形成平坦化的所得结构,然后将其蚀刻。 使用两种不同浓度的BPSG膜可以在回流过程中将烘烤温度降低多达50℃,同时防止所形成的回流BPSG膜的腐蚀形成性能。