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    • 26. 发明授权
    • Apparatus for pulling up a single crystal
    • 用于拉起单晶的装置
    • US5441014A
    • 1995-08-15
    • US170175
    • 1993-12-22
    • Junsuke TomiokaKazunori NagaiAkihiro Matsuzaki
    • Junsuke TomiokaKazunori NagaiAkihiro Matsuzaki
    • C30B15/00C30B15/14C30B35/00
    • C30B35/00C30B15/14Y10T117/1032Y10T117/1052Y10T117/1068
    • An apparatus for pulling up a single crystal according to Czochralski method is provided with a cylindrical first screen and a second screen. The first screen is arranged in the periphery of the zone of pulling up the single crystal, said screen being constituted by a heat absorbing body at the side facing a quartz crucible and by a heat insulator at the other side and being provided with respective outward and inward annular rims at the upper and lower ends thereof, the corner of said screen facing the crucible being formed in a curved or polygonal structure, and said annular rim at the lower end being positioned in the vicinity of filling the melt in the crucible. The second screen forming a parabolic shape in the section opening at its center while enclosing the crystal pulling-up zone and being provided at its upper end with an outward annular rim. Alternately, the second screen formed along the first screen may be provided within said first screen, and further the second screen may be provided with a forced cooling mechanism.
    • PCT No.PCT / JP91 / 00849 Sec。 371日期:1993年12月22日 102(e)日期1993年12月22日PCT Filed 1991年6月24日PCT Pub。 出版物WO93 / 00462 日期为1993年12月22日。根据切克劳斯基法提取单晶的装置设置有圆柱形第一屏和第二屏。 第一屏幕布置在提拉单晶区域的周围,所述屏幕由面对石英坩埚的一侧的吸热体和另一侧的隔热件构成,并且设置有相应的外部和 在其上端和下端处有向内的环形边缘,所述屏幕的面向坩埚的角部形成为弯曲或多边形结构,并且位于下端处的所述环形边缘位于将坩埚中的熔体填充的附近。 第二屏幕在其中心处的部分开口中形成抛物线形状,同时包围晶体提升区域并且在其上端处设置有向外的环形边缘。 或者,沿着第一屏幕形成的第二屏幕可以设置在所述第一屏幕内,并且第二屏幕还可以设置有强制冷却机构。
    • 27. 发明授权
    • Single crystal pulling apparatus
    • 单晶拉丝机
    • US5316742A
    • 1994-05-31
    • US772928
    • 1991-10-08
    • Junsuke TomiokaKazunori NagaiAkihiro Matsuzaki
    • Junsuke TomiokaKazunori NagaiAkihiro Matsuzaki
    • C30B15/00C30B15/14C30B35/00
    • C30B35/00C30B15/14Y10T117/1032Y10T117/1052Y10T117/1068
    • A single crystal pulling apparatus using Czochralski method includes a first screen in the shape of a hollow round cylinder. One side of the first screen facing a quartz crucible is made of a heat absorbent material and another side of the first screen is made of a heat insulator material. The upper and lower ends of the first screen have an outwardly extending flange and an inwardly extending flange, respectively. The first screen surrounds a single crystal pulling zone such that its lower flange is positioned near a melt charged zone in the crucible. The apparatus also includes a second screen positioned inside the first screen. The vertical section of the second screen has the shape of a substantially parabola and the center of the bottom of the second screen is open and surrounds the single crystal pulling zone. The upper end of the second screen has an outwardly extending flange. The apparatus increases the pulling speed of a grown single crystal and improves preventing degree of dislocation in the grown single crystal due to contamination of the grown single crystal with impurities.
    • 使用切克劳斯基法的单晶拉制装置包括中空圆筒形状的第一筛网。 面对石英坩埚的第一屏幕的一侧由吸热材料制成,第一屏幕的另一侧由绝热材料制成。 第一屏幕的上端和下端分别具有向外延伸的凸缘和向内延伸的凸缘。 第一屏幕围绕单晶拉伸区域,使得其下凸缘位于坩埚内的熔融带区附近。 该设备还包括位于第一屏幕内的第二屏幕。 第二屏幕的垂直部分具有大致抛物线的形状,并且第二屏幕的底部的中心是打开的并且围绕单晶拉伸区域。 第二屏幕的上端具有向外延伸的凸缘。 该装置增加了生长的单晶的拉伸速度,并且由于生长的单晶与杂质的污染而改善了防止生长的单晶中的位错程度。