会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明授权
    • Tapered PMR write pole with straight side wall portion
    • 锥形PMR写柱与直的侧壁部分
    • US08125732B2
    • 2012-02-28
    • US12583753
    • 2009-08-25
    • Zhigang BaiYan WuMoris Dovek
    • Zhigang BaiYan WuMoris Dovek
    • G11B5/147
    • G11B5/1278G11B5/3116
    • A main pole layer with a tapered trailing side is disclosed that has three sections each with a write pole portion along the ABS and a yoke portion. A lower section has a bottom surface including a leading edge at the write pole tip and sidewalls with a bevel angle between 4 and 20 degrees. The middle section has essentially vertical sidewalls with a tapered side starting at the trailing edge and extending to a back side of the write pole and into the yoke. An upper section includes a portion of the tapered side and a top surface of the main pole layer and has a sidewall with a bevel angle from 0 to 45 degrees. The thickness of the middle section is greater than the pole height variation caused by variations in back end processes including ion milling and lapping to reduce erase width (EW) variations.
    • 公开了具有锥形后缘的主极层,其具有三个部分,每个部分具有沿ABS的写极部分和轭部分。 下部具有底表面,该底表面包括位于写入极尖端的前缘和具有4至20度之间的斜角的侧壁。 中间部分具有基本上垂直的侧壁,其具有从后缘开始并延伸到写入极的后侧并进入轭的渐缩侧。 上部包括锥形侧的一部分和主极层的顶表面,并且具有具有0至45度的斜角的侧壁。 中间部分的厚度大于由后端工艺变化引起的极高度变化,包括离子铣削和研磨以减少擦除宽度(EW)变化。
    • 25. 发明申请
    • PMR write with flux choking area
    • PMR写入焊剂阻塞区域
    • US20110063755A1
    • 2011-03-17
    • US12586249
    • 2009-09-17
    • Zhigang BaiYue LiuKowang LiuYan WuMoris Dovek
    • Zhigang BaiYue LiuKowang LiuYan WuMoris Dovek
    • G11B5/10G11B5/127
    • G11B5/3116G11B5/1278G11B5/3163
    • A PMR writer having a trailing shield structure is disclosed in which a flux choking layer (FCL) formed adjacent to the ABS provides a means to limit the amount of flux flowing from the trailing shield to a first write shield (WS1) near the write pole tip thereby significantly reducing adjacent track erasure. The FCL has a substantially smaller thickness than a top section of the trailing shield to which it is attached along a side opposite the ABS. As a result, pole tip protrusion is reduced compared to prior art PMR writers. The FCL contacts a trailing side of WS1 at the ABS and one or both of the trailing sides of the WS1 and FCL may be tapered or perpendicular with respect to the ABS. The top trailing shield section, FCL, and WS1 may be comprised of NiFe, CoFe, CoFeNi, or alloys thereof.
    • 公开了具有拖尾屏蔽结构的PMR写入器,其中与ABS相邻形成的通量阻塞层(FCL)提供了一种将从后屏蔽流过的磁通量限制在写极附近的第一写屏蔽(WS1)的装置 从而显着地减少相邻轨道擦除。 FCL具有比尾部护罩的顶部部分基本上小的厚度,其沿着与ABS相对的一侧被附接到该顶部部分。 结果,与现有技术的PMR写入器相比,极尖突起减小。 FCL在ABS处接触WS1的后侧,并且WS1和FCL的一个或两个后侧可以相对于ABS呈锥形或垂直。 顶部后屏蔽部分FCL和WS1可以由NiFe,CoFe,CoFeNi或其合金组成。
    • 26. 发明申请
    • Tapered PMR write pole with straight side wall portion
    • 锥形PMR写柱与直的侧壁部分
    • US20110051293A1
    • 2011-03-03
    • US12583753
    • 2009-08-25
    • Zhigang BaiYan WuMoris Dovek
    • Zhigang BaiYan WuMoris Dovek
    • G11B5/127
    • G11B5/1278G11B5/3116
    • A main pole layer with a tapered trailing side is disclosed that has three sections each with a write pole portion along the ABS and a yoke portion. A lower section has a bottom surface including a leading edge at the write pole tip and sidewalls with a bevel angle between 4 and 20 degrees. The middle section has essentially vertical sidewalls with a tapered side starting at the trailing edge and extending to a back side of the write pole and into the yoke. An upper section includes a portion of the tapered side and a top surface of the main pole layer and has a sidewall with a bevel angle from 0 to 45 degrees. The thickness of the middle section is greater than the pole height variation caused by variations in back end processes including ion milling and lapping to reduce erase width (EW) variations.
    • 公开了具有锥形后缘的主极层,其具有三个部分,每个部分具有沿ABS的写极部分和轭部分。 下部具有底表面,该底表面包括位于写入极尖端的前缘和具有4至20度之间的斜角的侧壁。 中间部分具有基本上垂直的侧壁,其具有从后缘开始并延伸到写入极的后侧并进入轭的渐缩侧。 上部包括锥形侧的一部分和主极层的顶表面,并且具有具有0至45度的斜角的侧壁。 中间部分的厚度大于由后端工艺变化引起的极高度变化,包括离子铣削和研磨以减少擦除宽度(EW)变化。