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21. 发明授权

US07109114B2 HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance 失效
标题翻译： HDP-CVD调味工艺为高功率HDP-CVD gapfil提高了颗粒性能
公开(公告)号：US07109114B2
公开(公告)日：2006-09-19
申请号：US10841582
申请日：2004-05-07
申请人： Xiaolin Chen , Jason Bloking
发明人： Xiaolin Chen , Jason Bloking
IPC分类号： H01L21/44
CPC分类号： H01L21/02164 , C23C16/4404 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.
摘要翻译：一种操作基板处理室的方法，该方法包括在基板处理操作之前，将含有硅烷和氧气的调味气体以大于或等于约1.6:1的氧气流量流入所述室内以沉积硅在至少一个氮化铝喷嘴上暴露于室的内部的氧化膜。另外，一种基板处理系统，其包括壳体，用于将调节气体引入真空室的气体输送系统，其中气体输送系统包括暴露于真空室的一个或多个氮化铝喷嘴，控制器和具有具有用于控制气体输送系统以使氧化硅烷比大于或等于约1.6:1的调味气体流过以在氮化铝喷嘴上沉积氧化硅膜的说明书的程序。

22. 发明授权

US09404178B2 Surface treatment and deposition for reduced outgassing 有权
标题翻译：表面处理和沉积减少排气
公开(公告)号：US09404178B2
公开(公告)日：2016-08-02
申请号：US13494341
申请日：2012-06-12
申请人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： B05D3/04 , H05H1/24 , C23C16/40 , C23C16/455 , H01L21/02 , C23C16/34 , C23C16/452 , C23C16/505 , C23C16/56
CPC分类号： C23C16/401 , C23C16/345 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
摘要翻译：描述形成电介质层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

23. 发明授权

US08433204B2 DQPSK demodulator 有权
标题翻译： DQPSK解调器
公开(公告)号：US08433204B2
公开(公告)日：2013-04-30
申请号：US12978244
申请日：2010-12-23
申请人： Huiping Li , Xiaolin Chen , Fan Chen , Fahua Lan , Dapeng Kevin Zhang
发明人： Huiping Li , Xiaolin Chen , Fan Chen , Fahua Lan , Dapeng Kevin Zhang
IPC分类号： H04B10/04
摘要： A phase shift keyed demodulator includes first and second beam splitters, a first optical path, a second optical path, and a wavelength tuner. The first beam splitter splits an input signal into first and second output signals. The second beam splitter splits each first and second output signal into a transmitted signal and a reflected signal. The first optical path includes an optical path of each transmitted signal from a beam splitting surface to a reflector and back to the beam splitting surface. The second optical path includes an optical path of each reflected signal from the beam splitting surface to a mirror surface and back to the beam splitting surface. A path difference introduces a delay between the transmitted signal and the reflected signal. The wavelength tuner tunes the demodulator to a predetermined central wavelength and introduces a phase shift between first and second transmitted signals.
摘要翻译：相移键控解调器包括第一和第二分束器，第一光路，第二光路和波长调谐器。第一分束器将输入信号分成第一和第二输出信号。第二分束器将每个第一和第二输出信号分离成发射信号和反射信号。第一光路包括从分束表面到反射器的每个发射信号的光路，并且返回到分束表面。第二光路包括从分束表面到镜面并返回到分束表面的每个反射信号的光路。路径差引入发射信号和反射信号之间的延迟。波长调谐器将解调器调谐到预定的中心波长，并引入第一和第二发射信号之间的相移。

24. 发明申请

US20110159703A1 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 有权
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：US20110159703A1
公开(公告)日：2011-06-30
申请号：US12969877
申请日：2010-12-16
申请人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

25. 发明授权

US5822219A System for identifying materials by NIR spectrometry 失效
标题翻译：通过NIR光谱法识别材料的系统
公开(公告)号：US5822219A
公开(公告)日：1998-10-13
申请号：US645104
申请日：1996-05-13
申请人： Xiaolin Chen , Stephen L Monfre
发明人： Xiaolin Chen , Stephen L Monfre
IPC分类号： G01N21/35 , G06K9/62 , G06F19/00
CPC分类号： G06K9/6247 , G01N21/359 , G06K9/6219
摘要： In a method for identifying an unknown product a library of absorbance spectra of known products is measured and stored in a library. A quick search using clustering techniques is conducted to narrow the search to a few products, followed by an exhaustive search of the spectra of the few products. More specifically, principal component analysis is applied to the absorbance spectra to generate product score vectors extending into principal component inside model space which are divided into clusters and subclusters in accordance with their relative proximity. Hyperspheres are constructed around each vector and an envelope is constructed to enclose each cluster surrounding the hyperspheres within the cluster. The absorbance spectrum of the unknown product to be identified is measured and an unknown product score vector is determined from the unknown product spectrum projecting in principal component inside model space of the clusters. It is determined whether or not the unknown product score vector falls within one of the envelopes and if so the product score vector is projected into the principal component inside model space of that cluster and it is determined whether or not the unknown product score vector falls within any of the subclusters divided from the cluster. This process is repeated until the unknown product score vector is found to lie in a cluster which is not further subdivided. In this manner, the search is narrowed to a few products. An exhaustive search is then carried out to match the spectrum of the unknown product with the spectra of the known products corresponding to the undivided subcluster.
摘要翻译：在识别未知产物的方法中，测量已知产品的吸收光谱图并将其存储在文库中。进行使用聚类技术的快速搜索，将搜索缩小到几个产品，然后详细搜索少数产品的光谱。更具体地，将主成分分析应用于吸收光谱，以生成延伸到模型空间内的主成分的产物分数向量，其根据它们的相对接近度被分成簇和子簇。围绕每个向量构建超球体，并且构造包围以围绕簇内的超球体周围的每个簇。测量待鉴定的未知产物的吸收光谱，并从在簇的模型空间内的主成分中突出的未知产物光谱确定未知产物得分矢量。确定未知产品评分向量是否落入一个包络内，如果是，则将该产品分数向量投影到该群集的模型空间内的主成分中，并且确定未知商品分数向量是否落入任何子集群从集群中分离出来。重复该过程，直到发现未知产品分数向量位于不进一步细分的簇中。以这种方式，搜索被缩小到几个产品。然后进行详尽的搜索以将未知产物的光谱与对应于未分解的亚簇的已知产物的光谱相匹配。

26. 发明授权

US08629067B2 Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio 有权
标题翻译：使用柔性氮/氢比产生的自由基的介电膜生长
公开(公告)号：US08629067B2
公开(公告)日：2014-01-14
申请号：US12969877
申请日：2010-12-16
申请人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
发明人： Jingmei Liang , Xiaolin Chen , Matthew L. Miller , Nitin K. Ingle , Shankar Venkataraman
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

27. 发明授权

US08450191B2 Polysilicon films by HDP-CVD 失效
标题翻译：通过HDP-CVD制备多晶硅薄膜
公开(公告)号：US08450191B2
公开(公告)日：2013-05-28
申请号：US13089966
申请日：2011-04-19
申请人： Anchuan Wang , Xiaolin Chen , Young S. Lee
发明人： Anchuan Wang , Xiaolin Chen , Young S. Lee
IPC分类号： H01L21/20 , H01L21/3205
CPC分类号： H01L21/0262 , C23C16/0245 , C23C16/045 , C23C16/24 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/02595 , H01L21/28556
摘要： Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g.
摘要翻译：描述形成多晶硅层的方法。所述方法包括在包含沉积衬底的衬底处理区域中从硅前体形成高密度等离子体。所描述的方法相对于现有技术在降低的衬底温度（例如<500℃）下产生多晶膜。偏置等离子体功率调整的可用性进一步使得能够调整形成的多晶硅层的共形性。当掺杂物被包括在高密度等离子体中时，它们可以以不需要单独的激活步骤的方式结合到多晶硅层中。

28. 发明授权

US07902080B2 Deposition-plasma cure cycle process to enhance film quality of silicon dioxide 有权
标题翻译：沉积 - 等离子体固化循环过程，以提高二氧化硅的膜质量
公开(公告)号：US07902080B2
公开(公告)日：2011-03-08
申请号：US11753968
申请日：2007-05-25
申请人： Xiaolin Chen , Srinivas D. Nemani , Shankar Venkataraman
发明人： Xiaolin Chen , Srinivas D. Nemani , Shankar Venkataraman
IPC分类号： H01L21/302
CPC分类号： C23C16/045 , C23C16/402 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/3105 , H01L21/31633
摘要： Methods of filling a gap on a substrate with silicon oxide are described. The methods may include the steps of introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber, reacting the precursors to form a first silicon oxide layer in the gap on the substrate, and etching the first silicon oxide layer to reduce the carbon content in the layer. The methods may also include forming a second silicon oxide layer on the first layer, and etching the second layer to reduce the carbon content in the second layer. The silicon oxide layers are annealed after the gap is filled.
摘要翻译：描述了用氧化硅填充衬底上的间隙的方法。所述方法可以包括以下步骤：将有机硅前体和氧前体引入沉积室，使前体反应以在衬底上的间隙中形成第一氧化硅层，并蚀刻第一氧化硅层以还原碳内容在图层中。所述方法还可以包括在第一层上形成第二氧化硅层，并蚀刻第二层以降低第二层中的碳含量。在填充间隙之后对氧化硅层进行退火。

29. 发明申请

US20090103867A1 Variable Optical Attenuator 审中-公开
标题翻译：可变光衰减器
公开(公告)号：US20090103867A1
公开(公告)日：2009-04-23
申请号：US12245817
申请日：2008-10-06
申请人： Qing Huang , Chang Xiao , Xiaolin Chen , Yatao Yang
发明人： Qing Huang , Chang Xiao , Xiaolin Chen , Yatao Yang
IPC分类号： G02B6/26
CPC分类号： G02B6/26 , G02B6/4201 , G02B6/424 , G02B6/426 , G02B6/4287
摘要： A compact variable optical attenuator having optical-tap functionality is described comprising a planar waveguide attenuator, a lens, and a photodetector. Input and output waveguides are located close to the optical axis of the lens, which reduces optical aberrations and insertion loss. The waveguide attenuator works by light absorption with virtually no scattered light present, which improves fidelity of measurements of the tapped optical power by the photodetector. The entire tap-attenuator assembly is packaged into a small form pluggable (SFP) package having two optical connectors.
摘要翻译：描述了具有光学抽头功能的紧凑型可变光衰减器，其包括平面波导衰减器，透镜和光电检测器。输入和输出波导位于靠近透镜的光轴的位置，这减少了光学像差和插入损耗。波导衰减器通过光吸收工作，实际上没有散射光存在，这提高了由光电检测器测量的抽头光功率的保真度。整个抽头衰减器组件被封装成具有两个光学连接器的小型可插拔（SFP）封装。

30. 发明申请

US20050250340A1 HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance 失效
标题翻译： HDP-CVD调味工艺为高功率HDP-CVD gapfil提高了颗粒性能
公开(公告)号：US20050250340A1
公开(公告)日：2005-11-10
申请号：US10841582
申请日：2004-05-07
申请人： Xiaolin Chen , Jason Bloking
发明人： Xiaolin Chen , Jason Bloking
IPC分类号： C23C16/44 , H01L21/31 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/4404 , H01L21/02274 , H01L21/31612 , Y10S438/905
摘要： A method of operating a substrate processing chamber that includes, prior to a substrate processing operation, flowing a seasoning gas comprising silane and oxygen into said chamber at a flow ratio of greater than or equal to about 1.6:1 oxygen to silane to deposit a silicon oxide film over at least one aluminum nitride nozzle exposed to an interior portion of the chamber. Also, a substrate processing system that includes a housing, a gas delivery system for introducing a seasoning gas into a vacuum chamber, where the gas delivery system comprises one or more aluminum nitride nozzles exposed to the vacuum chamber, a controller and a memory having a program having instructions for controlling the gas delivery system to flow a seasoning gas that has an oxygen to silane ratio greater than or equal to about 1.6:1 to deposit a silicon oxide film on the aluminum nitride nozzles.
摘要翻译：一种操作基板处理室的方法，该方法包括在基板处理操作之前，将含有硅烷和氧气的调味气体以大于或等于约1.6:1的氧气流量流入所述室内以沉积硅在至少一个氮化铝喷嘴上暴露于室的内部的氧化膜。另外，一种基板处理系统，其包括壳体，用于将调节气体引入真空室的气体输送系统，其中气体输送系统包括暴露于真空室的一个或多个氮化铝喷嘴，控制器和具有具有用于控制气体输送系统以使氧化硅烷比大于或等于约1.6:1的调味气体流过以在氮化铝喷嘴上沉积氧化硅膜的说明书的程序。

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