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21. 发明授权

US08981214B2 Organic solar cell and method of making the same 有权
标题翻译：有机太阳能电池及其制作方法
公开(公告)号：US08981214B2
公开(公告)日：2015-03-17
申请号：US12913349
申请日：2010-10-27
申请人： Soo-Ghang Ihn , Bulliard Xavier , Sung-Young Yun , Woong Choi , Tae-Sang Kim
发明人： Soo-Ghang Ihn , Bulliard Xavier , Sung-Young Yun , Woong Choi , Tae-Sang Kim
IPC分类号： H01L31/00 , H01L51/42 , H01L51/44 , H01L51/00
CPC分类号： H01L51/442 , H01L51/0036 , H01L51/4233 , H01L51/4273 , Y02E10/52 , Y02E10/549 , Y02P70/521
摘要： An organic solar cell including a cathode and an anode, a photoactive layer disposed between the cathode and the anode, and a buffer layer between the photoactive layer and the cathode, wherein the cathode includes a compound represented by the following Chemical Formula 1 Zn(1-x)MxO(1-y)Wy, [Chemical Formula 1] and the buffer layer includes ZnO, and wherein in Chemical Formula 1, M is aluminum, gallium, indium, silicon, germanium, titanium, zirconium, hafnium, or a combination thereof, W is fluorine, bromine, or a combination thereof, and x and y are each independently greater than or equal to 0 and less than or equal to 0.1, provided that x and y are not simultaneously 0.
摘要翻译：包括阴极和阳极的有机太阳能电池，设置在阴极和阳极之间的光活性层和光活性层和阴极之间的缓冲层，其中阴极包括由以下化学式1表示的化合物Zn（1 -x）MxO（1-y）Wy，[化学式1]和缓冲层包括ZnO，其中在化学式1中，M是铝，镓，铟，硅，锗，钛，锆，铪或其组合，W是氟，溴或其组合，x和y各自独立地大于或等于0且小于或等于0.1，条件是x和y不同时为0。

22. 发明授权

US08946789B2 Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device 有权
标题翻译：半导体装置及其制造方法以及包括半导体装置的电子装置
公开(公告)号：US08946789B2
公开(公告)日：2015-02-03
申请号：US13295620
申请日：2011-11-14
申请人： Sun-kook Kim , Woong Choi , Sang-yoon Lee
发明人： Sun-kook Kim , Woong Choi , Sang-yoon Lee
IPC分类号： H01L29/76 , H01L29/06 , H01L29/10 , B82Y10/00 , B82Y40/00 , H01L29/775 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/42
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y40/00 , H01L29/1029 , H01L29/1033 , H01L29/775 , H01L29/78648 , H01L29/78696 , H01L51/0048 , H01L51/0554 , H01L51/0558 , H01L51/0562 , H01L51/0579 , H01L51/424 , Y02E10/549 , Y02P70/521
摘要： An example embodiment relates to a transistor including a channel layer. A channel layer of the transistor may include a plurality of unit layers spaced apart from each other in a vertical direction. Each of the unit layers may include a plurality of unit channels spaced apart from each other in a horizontal direction. The unit channels in each unit layer may form a stripe pattern. Each of the unit channels may include a plurality of nanostructures. Each nanostructure may have a nanotube or nanowire structure, for example a carbon nanotube (CNT).
摘要翻译：示例性实施例涉及包括沟道层的晶体管。晶体管的沟道层可以包括在垂直方向上彼此间隔开的多个单位层。每个单元层可以包括在水平方向上彼此间隔开的多个单位通道。每个单元层中的单位通道可以形成条纹图案。每个单位通道可以包括多个纳米结构。每个纳米结构可以具有纳米管或纳米线结构，例如碳纳米管（CNT）。

23. 外观设计

USD686586S1 Mobile phone 有权
公开(公告)号：USD686586S1
公开(公告)日：2013-07-23
申请号：US29419311
申请日：2012-04-26
申请人： Seung Chul Cho , Woong Choi
设计人： Seung Chul Cho , Woong Choi

24. 发明申请

US20120193689A1 PIXEL OF A MULTI-STACKED CMOS IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：多层CMOS图像传感器的像素及其制造方法
公开(公告)号：US20120193689A1
公开(公告)日：2012-08-02
申请号：US13205127
申请日：2011-08-08
申请人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
发明人： Kyung-bae Park , Kyu-sik Kim , Yong-wan Jin , Woong Choi , Kwang-hee Lee , Do-hwan Kim
IPC分类号： H01L31/113 , H01L31/18
CPC分类号： H01L27/307 , H01L23/585 , H01L27/1214 , H01L27/14609 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14667 , H01L27/14685 , H01L27/14687 , H01L33/08 , H01L2924/0002 , H01L2924/00
摘要： Provided is a pixel of a multi-stacked complementary metal-oxide semiconductor (CMOS) image sensor and a method of manufacturing the image sensor including a light-receiving unit that may include first through third photodiode layers that are sequentially stacked, an integrated circuit (IC) that is formed below the light-receiving unit, electrode layers that are formed on and below each of the first through third photodiode layers, and a contact plug that connects the electrode layer formed below each of the first through third photodiode layers with a transistor of the IC.
摘要翻译：提供了多层互补金属氧化物半导体（CMOS）图像传感器的像素，以及包括可以包括依次层叠的第一至第三光电二极管层的光接收单元的图像传感器的制造方法，集成电路 IC），其形成在所述第一至第三光电二极管层之下和之下形成的电极层，以及将形成在所述第一至第三光电二极管层之下的电极层与所述第一至第三光电二极管层之间形成的电极层的接触插塞晶体管的IC。

25. 发明申请

US20100109523A1 DIELECTRIC COMPOSITION AND PLASMA DISPLAY PANEL INCLUDING THE SAME 审中-公开
标题翻译：电介质组合物和等离子体显示面板包括它们
公开(公告)号：US20100109523A1
公开(公告)日：2010-05-06
申请号：US12532980
申请日：2007-12-06
申请人： Woong Choi , Taejung Kim
发明人： Woong Choi , Taejung Kim
IPC分类号： H01J17/49 , C03C3/04
CPC分类号： H01B3/10 , C03C3/066 , C03C4/16 , C03C12/00 , H01J11/12 , H01J11/38
摘要： A dielectric composition for plasma display panel and a plasma display panel including the same are disclosed. The dielectric composition includes about 3 to 10 parts by weight of SiO2, about 13 to 35 parts by weight of B2O3, about 25 to 48 parts by weight of ZnO, and about 10 to 20 parts by weight of BaO.
摘要翻译：公开了一种用于等离子体显示面板的电介质组合物和包括其的等离子体显示面板。电介质组合物包括约3至10重量份的SiO 2，约13至35重量份的B 2 O 3，约25至48重量份的ZnO和约10至20重量份的BaO。

26. 发明申请

US20060255244A1 Fabrication method and test method for light emitting display 失效
标题翻译：发光显示器的制造方法和测试方法
公开(公告)号：US20060255244A1
公开(公告)日：2006-11-16
申请号：US11432181
申请日：2006-05-11
申请人： Woong Choi
发明人： Woong Choi
IPC分类号： G01J1/42
CPC分类号： G09G3/006 , G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861
摘要： A fabrication method and a test method for a light emitting display that together produce a pixel portion of the display by fabricating pixel circuits, testing the pixel circuits, and subsequently fabricating light emitting diodes is disclosed.
摘要翻译：公开了通过制造像素电路，测试像素电路以及随后制造发光二极管来一起产生显示器的像素部分的发光显示器的制造方法和测试方法。

27. 发明申请

US20060137378A1 Apparatus and method for controlling lamp of refrigerator 有权
标题翻译：冰箱灯控制装置及方法
公开(公告)号：US20060137378A1
公开(公告)日：2006-06-29
申请号：US11318614
申请日：2005-12-28
申请人： Woong Choi
发明人： Woong Choi
IPC分类号： G05D23/32 , F25D23/00
CPC分类号： F25D27/005 , F25D2500/04 , F25D2700/02
摘要： The present invention relates to an apparatus and method for controlling a lamp in a refrigerator, wherein a time period when the refrigerator lamp is turned on is added up while the lamp is repeatedly turned on and off at least once, and the lamp is temporarily turned off when the added time period reaches a predetermined time period value, so that the lamp can be prevented from being overheated and parts positioned adjacent thereto from being thus deformed due to heat generated from the lamp. The method of the present invention comprises (a) calculating a time interval from a point of time when an refrigerator door is closed and the lamp is thus turned off to a point of time when the door is opened again, (b) determining whether the calculated time interval exceeds a predetermined time interval value, and (c) controlling temporarily turning off the lamp when it is determined in step (b) that the calculated time interval does not exceed the predetermined time interval value and simultaneously an accumulative sum of the time period when the lamp is turned on exceeds a predetermined accumulative sum value. Therefore, according to the present invention, there is an advantage in that a time period for cooling heat generated near the lamp can be provided such that the deformation of injection molded parts near the lamp and the fire hazard due to the heat generated from the lamp can be prevented. Further, there is another advantage in that unnecessary consumption of electric power due to frequent opening/closing of the refrigerator door can be reduced.
摘要翻译：本发明涉及一种用于控制冰箱中的灯的装置和方法，其中当灯反复打开和关闭至少一次时，将冰箱灯打开的时间段相加，并且灯暂时转动当添加的时间段达到预定的时间周期值时，可以防止灯被过热，并且与其相邻的部件因由灯产生的热量而变形。本发明的方法包括：（a）从关闭冰箱门并将灯关闭的时间点再次打开到门的时间点计算时间间隔，（b）确定是否计算时间间隔超过预定时间间隔值，以及（c）当在步骤（b）中确定计算出的时间间隔不超过预定时间间隔值并且同时累加时间的总和时，控制暂时关闭灯泡当灯开启时的周期超过预定的累积和值。因此，根据本发明的优点在于，可以设置用于在灯附近产生的冷却热的时间段，使得灯附近的注射成型部件的变形和由于灯产生的热量引起的火灾危险可以防止。此外，还有另一个优点是可以减少由于冰箱门的频繁打开/关闭导致的不必要的电力消耗。

28. 发明授权

US5859016A Memory enhancing and anti-dementia agent containing dehydroevodiamine HC1 as active ingredient 失效
标题翻译：含有脱氢多巴胺HCL作为活性成分的记忆增强和抗痴呆药
公开(公告)号：US5859016A
公开(公告)日：1999-01-12
申请号：US815678
申请日：1997-03-12
申请人： Yoo-Hun Suh , Sam-Sik Kang , Seong-Hun Kim , Cheol-Hyoung Park , Woong Choi
发明人： Yoo-Hun Suh , Sam-Sik Kang , Seong-Hun Kim , Cheol-Hyoung Park , Woong Choi
IPC分类号： C07D471/14 , A61K31/40 , A61K31/505 , A61K36/75 , A61P25/28
CPC分类号： A61K31/505
摘要： Dehydroevodiamine-HCl, a constituent of Evodia rutaecarpa Benth. (DHED) exhibits anti-AChE activity and improves the memory impairment of animals produced by scopolamine in the passive avoidance test. Thus, DHED can be a potent, long term memory enhancing and anti-dementia agent if it is used together with a pharmaceutically acceptable carrier.
摘要翻译：脱氢维生素-HCl，一种Evodia rutaecarpa Benth的成分。（DHED）在被动回避试验中显示抗AChE活性并改善由东莨菪碱产生的动物的记忆障碍。因此，如果DHED与药学上可接受的载体一起使用，则DHED可以是有效的长期记忆增强和抗痴呆药剂。

29. 发明授权

US08952356B2 Semiconductor device, method of manufacturing the same, and electronic device including the semiconductor device 有权
标题翻译：半导体装置及其制造方法以及包括半导体装置的电子装置
公开(公告)号：US08952356B2
公开(公告)日：2015-02-10
申请号：US13292285
申请日：2011-11-09
申请人： Sun-kook Kim , Woong Choi , Yong-wan Jin
发明人： Sun-kook Kim , Woong Choi , Yong-wan Jin
IPC分类号： H01L29/06 , H01L29/16 , B82Y10/00 , H01L29/66 , H01L29/778 , B82Y30/00 , H01L29/10
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y30/00 , H01L29/1054 , H01L29/66431 , H01L29/7782 , H01L29/7831 , Y10S977/734
摘要： An example embodiment relates to a semiconductor device including a semiconductor element. The semiconductor element may include a plurality of unit layers spaced apart from each other in a vertical direction. Each unit layer may include a patterned graphene layer. The patterned graphene layer may be a layer patterned in a nanoscale. The patterned graphene layer may have a nanomesh or nanoribbon structure. The semiconductor device may be a transistor or a diode. An example embodiment relates to a method of making a semiconductor device including a semiconductor element.
摘要翻译：示例性实施例涉及包括半导体元件的半导体器件。半导体元件可以包括在垂直方向上彼此间隔开的多个单元层。每个单位层可以包括图案化的石墨烯层。图案化的石墨烯层可以是以纳米尺度图案化的层。图案化石墨烯层可以具有纳米级或纳米级结构。半导体器件可以是晶体管或二极管。示例性实施例涉及制造包括半导体元件的半导体器件的方法。

30. 发明授权

US08324616B2 Optoelectronic device 失效
标题翻译：光电器件
公开(公告)号：US08324616B2
公开(公告)日：2012-12-04
申请号：US12700229
申请日：2010-02-04
申请人： Bulliard Xavier , Woong Choi , Jae-Young Choi
发明人： Bulliard Xavier , Woong Choi , Jae-Young Choi
IPC分类号： H01L51/54
CPC分类号： H01L51/424 , B82Y10/00 , H01L51/0036 , H01L51/0047 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： An optoelectronic device including a first electrode, an active layer disposed on the first electrode, a second electrode disposed on the active layer, and a self-assembled monolayer interposed between the first electrode and the active layer, interposed between the active layer and the second electrode, or disposed inside the active layer, wherein the self-assembled monolayer includes a first compound and a second compound having different functional groups from each other.
摘要翻译：一种光电子器件，包括第一电极，设置在第一电极上的有源层，设置在有源层上的第二电极，以及置于第一电极和有源层之间的自组装单层，插入在有源层和第二电极之间电极，或设置在有源层内，其中所述自组装单层包括彼此具有不同官能团的第一化合物和第二化合物。

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