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21. 发明授权

US06171757B2 Organometallic polymers and use thereof 失效
标题翻译：有机金属聚合物及其用途
公开(公告)号：US06171757B2
公开(公告)日：2001-01-09
申请号：US09350937
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Ranee W. Kwong
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Ranee W. Kwong
IPC分类号： G03F7004
CPC分类号： G03F7/0042 , G03F7/027
摘要： Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译：包含有机金属可聚合单体酸或酯的聚合物的组合物可用作抗蚀剂，并且对显影照射敏感，同时显示增强的抗反应离子蚀刻性。

22. 发明授权

US06265134B1 Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效
标题翻译：具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物
公开(公告)号：US06265134B1
公开(公告)日：2001-07-24
申请号：US09699764
申请日：2000-10-30
申请人： Pushkara R. Varanasi , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ranee W. Kwong
发明人： Pushkara R. Varanasi , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ranee W. Kwong
IPC分类号： G03C173
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/128
摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc. The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.
摘要翻译：通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在所产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制成导电，半导体或绝缘结构通过光刻。

23. 发明授权

US6140015A Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching 失效
标题翻译：具有侧链极性官能化芳族基团和酸不稳定支化的光致抗蚀剂组合物
公开(公告)号：US6140015A
公开(公告)日：2000-10-31
申请号：US209019
申请日：1998-12-10
申请人： Pushkara R. Varanasi , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ranee W. Kwong
发明人： Pushkara R. Varanasi , Ahmad D. Katnani , Mahmoud M. Khojasteh , Ranee W. Kwong
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03C1/73 , G03F7/028
CPC分类号： G03F7/039 , G03F7/0045 , G03F7/038 , Y10S430/106 , Y10S430/128
摘要： Acid-catalyzed positive photoresist compositions having generally improved performance (especially photoresist compositions having improved contrast (solubility differential), shrinkage and processing kinetics on radiation exposure) are obtained by use of polymers containing pendant polar-functionalized aromatic groups and acid-labile light crosslinking. The photoresist compositions also may contain a photosensitive acid-generating component as well as a solvent and possibly other auxiliary components. The polymers may contain other functional groups or components designed to impart alkaline-solubility, to provide alkaline-solubility protection in the absence of generated acid, etc.The photoresist compositions can be used to create patterned photoresist structures and further to make conductive, semiconductive or insulative structures by photolithography.
摘要翻译：通过使用含有极性官能化的芳族基团和酸不稳定的轻交联的聚合物，可获得具有通常改进性能的酸催化的正性光致抗蚀剂组合物（特别是具有改善的对比度（溶解度差异），收缩和加工动力学的光致抗蚀剂组合物）。光致抗蚀剂组合物还可以含有感光酸产生组分以及溶剂以及可能的其它辅助组分。聚合物可以包含设计成赋予碱溶性的其它官能团或组分，以在不存在产生的酸等的情况下提供碱溶性保护。光致抗蚀剂组合物可用于产生图案化的光致抗蚀剂结构，并进一步制备导电，半导电或绝缘结构通过光刻。

24. 发明授权

US09012133B2 Removal of alkaline crystal defects in lithographic patterning 有权
标题翻译：去除光刻图案中的碱性晶体缺陷
公开(公告)号：US09012133B2
公开(公告)日：2015-04-21
申请号：US13221248
申请日：2011-08-30
申请人： Javier J. Perez , Dario L. Goldfarb , Ranee W. Kwong , Libor Vyklicky
发明人： Javier J. Perez , Dario L. Goldfarb , Ranee W. Kwong , Libor Vyklicky
IPC分类号： G03F7/32 , G03F7/40
CPC分类号： G03F7/405
摘要： An adhesion promoter layer is formed on a surface of a substrate as an adhesion promoter layer, on which a photoresist is applied. The photoresist is lithographically exposed. Soluble portions of the lithographically exposed photoresist are dissolved in a developer solution including tetraalkylammonium hydroxide. Tetraalkylammonium hydroxide salts are formed in crystalline forms on surfaces of the substrate. A water-soluble acidic polymer layer is applied over the surfaces of the substrate to dissolve the tetraalkylammonium hydroxide salts. The water-soluble acidic polymer layer is rinsed off by water, thereby providing clean surfaces that do not include the tetraalkylammonium hydroxide salts on the substrate. Subsequent processes can be performed on the substrate, which is covered by remaining portions of the developed photoresist and has clean surfaces in regions not covered by the photoresist.
摘要翻译：在基材的表面上形成粘合促进剂层作为粘合促进剂层，在其上施加光致抗蚀剂。光致抗蚀剂被光刻曝光。将光刻曝光的光致抗蚀剂的可溶部分溶解在包括四烷基氢氧化铵的显影剂溶液中。四烷基氢氧化铵盐以结晶形式形成在基材的表面上。将水溶性酸性聚合物层施加在基材的表面上以溶解四烷基氢氧化铵盐。将水溶性酸性聚合物层用水冲洗掉，由此提供在基材上不包括四烷基氢氧化铵盐的清洁表面。随后的工艺可以在衬底上进行，其被显影的光致抗蚀剂的剩余部分覆盖，并且在未被光致抗蚀剂覆盖的区域中具有清洁的表面。

25. 发明授权

US06939664B2 Low-activation energy silicon-containing resist system 失效
标题翻译：低活化能含硅抗蚀剂体系
公开(公告)号：US06939664B2
公开(公告)日：2005-09-06
申请号：US10693199
申请日：2003-10-24
申请人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
发明人： Wu-Song Huang , Robert D. Allen , Marie Angelopoulos , Ranee W. Kwong , Ratnam Sooriyakumaran
IPC分类号： G03C1/76 , G03F20060101 , G03F7/004 , G03F7/075 , G03E7/004
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193 nm and 157 nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分，用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

26. 发明授权

US06818381B2 Underlayer compositions for multilayer lithographic processes 失效
标题翻译：用于多层光刻工艺的底层组合物
公开(公告)号：US06818381B2
公开(公告)日：2004-11-16
申请号：US10026184
申请日：2001-12-21
申请人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
发明人： Mahmoud M. Khojasteh , Timothy M. Hughes , Ranee W. Kwong , Pushkara Rao Varanasi , William R. Brunsvold , Margaret C. Lawson , Robert D. Allen , David R. Medeiros , Ratnam Sooriyakumaran , Phillip Brock
IPC分类号： G03F711
CPC分类号： G03F7/094 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/0758 , G11B5/3163
摘要： Compositions suitable for forming planarizing underlayers for multilayer lithographic processes are characterized by the presence of (A) a polymer containing: (i) cyclic ether moieties, (ii) saturated polycyclic moieties, and (iii) aromatic moieties for compositions not requiring a separate crosslinker, or (B) a polymer containing: (i) saturated polycyclic moieties, and (ii) aromatic moieties for compositions requiring a separate crosslinker. The compositions provide outstanding optical, mechanical and etch selectivity properties. The compositions are especially useful in lithographic processes using radiation less than 200 nm in wavelength to configure underlying material layers.
摘要翻译：适用于形成用于多层平版印刷工艺的平坦化底层的组合物的特征在于（A）含有（i）环醚部分，（ii）饱和多环部分和（iii）不需要单独交联剂的组合物的芳族部分的聚合物，或（B）含有：（i）饱和多环部分的聚合物，和（ii）需要单独交联剂的组合物的芳族部分。该组合物提供优异的光学，机械和蚀刻选择性。组合物在使用波长小于200nm的辐射的光刻工艺中特别有用，以配置下层材料层。

27. 发明授权

US06458907B1 Organometallic polymers and use thereof 失效
标题翻译：有机金属聚合物及其用途
公开(公告)号：US06458907B1
公开(公告)日：2002-10-01
申请号：US09677586
申请日：2000-10-03
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Ranee W. Kwong
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Ranee W. Kwong
IPC分类号： C08F23004
CPC分类号： G03F7/0042 , G03F7/027
摘要： Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译：包含有机金属可聚合单体酸或酯的聚合物的组合物可用作抗蚀剂，并且对显影照射敏感，同时显示增强的抗反应离子蚀刻性。

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