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    • 29. 发明授权
    • Dual-bit memory device having trench isolation material disposed near bit line contact areas
    • 具有设置在位线接触区域附近的沟槽隔离材料的双位存储器件
    • US07948052B2
    • 2011-05-24
    • US11612413
    • 2006-12-18
    • Wei Zheng
    • Wei Zheng
    • H01L27/10
    • H01L27/11568H01L27/0207H01L27/115
    • A dual-bit memory device is provided which includes trench isolation material disposed near bit line contact areas. For example, in one implementation a semiconductor memory device is provided in which each memory cell can store two bits of information. The memory device comprises a substrate, first and second buried bit lines in the substrate, a first bit line contact on the first buried bit line, a second bit line contact on the second buried bit line, and an insulator region disposed in the substrate between the first buried bit line and the second buried bit line. The insulator region prevents a current from flowing between the first buried bit line and the second buried bit line.
    • 提供了一种双位存储器件,其包括设置在位线接触区域附近的沟槽隔离材料。 例如,在一个实现中,提供半导体存储器件,其中每个存储器单元可以存储两位信息。 存储器件包括衬底,衬底中的第一和第二掩埋位线,第一掩埋位线上的第一位线接触,第二掩埋位线上的第二位线接触,以及设置在衬底中的绝缘体区域 第一个掩埋位线和第二个埋入位线。 绝缘体区域防止电流在第一掩埋位线和第二掩埋位线之间流动。