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21. 发明专利

JP2001240973A VACUUM TREATMENT SYSTEM 失效
公开(公告)号：JP2001240973A
公开(公告)日：2001-09-04
申请号：JP2000058110
申请日：2000-03-03
申请人： ULVAC CORP
发明人： KUROKAWA KUNIAKI , KANEDA TOSHINOBU , HIRATA SHOSUKE , KIKUCHI MASASHI
IPC分类号： C23C16/505 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To provide a technology of preventing plasma from infiltrating in a vacuum treatment system to implement the plasma CVD method, etc. SOLUTION: A film forming apparatus 1 comprises a vacuum tank 2, a pedestal 3 which is arranged in the vacuum tank 2 and places a substrate 10 thereon, and conductive plates 301-304, and the conductive plates 301-304 electrically and directly connect the pedestal 3 to the vacuum tank 2. The conductive plates 301-304 are reduced in surface resistance due to the skin effect, and low in impedance to the high frequency voltage. By directly and electrically connecting the pedestal 3 to the vacuum tank 2 via the conductive plates 301-304 of low impedance, the vacuum tank 2 is substantially same in electric potential as the pedestal 3 even when the high frequency voltage is applied to an electrode 4 facing the pedestal 3, and the plasma is prevented from infiltrating the side or the back side of the pedestal 3, and stabilized.

22. 发明专利

JP2001144079A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JP2001144079A
公开(公告)日：2001-05-25
申请号：JP2000145487
申请日：2000-05-17
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H05H1/46 , C23C16/509 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a multiple-electrode type plasma treatment device wherein a multiplicity of plasma generating spaces can be formed in a vacuum chamber. SOLUTION: In the plasma treatment device according to the present invention, an anode electrode which is connected to a ground potential and controls a discharge space is disposed in the central portion in a vacuum chamber. A plurality of high-frequency electrodes are disposed on both sides of this anode electrode as opposed to the anode electrode. The high-frequency electrodes are connected to a common high-frequency power source via their respective vacuum capacitors or LC circuits and a common matching circuit network.

23. 发明专利

JP2001144069A PLASMA ETCHING APPARATUS FOR FILM-SHAPED SUBSTRATE 失效
公开(公告)号：JP2001144069A
公开(公告)日：2001-05-25
申请号：JP2000145532
申请日：2000-05-17
申请人： ULVAC CORP
发明人： TAKEI HIDEO , ISHIKAWA MICHIO , OTA YOSHIFUMI , KIKUCHI MASASHI , IKEDA HITOSHI , OSONO MASA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a method and apparatus for plasma-etching film-shaped substrates capable of avoiding the problem associated with thermal expansion of the film-shaped substrates and further controlling their profile while preventing undercut. SOLUTION: This method for plasma-etching a film-shaped substrate is such that the film-shaped substrate is held on a cathode electrode by an electrostatically sucking electrode and a mechanical clamping means through a clearance between the film-shaped substrate and the mechanical clamping means, and such that a mixed gas having fluorine-containing halogen gas mixed with O2 and N2 is used as an etching gas. Further, this etching apparatus comprises an electrostatically sucking electrode and a mechanical clamping means on a cathode electrode, and uses a mixed gas having fluorine-containing halogen gas mixed with O2 and N2. The electrostatically sucking electrode electrostatically sucks and holds the film-shaped substrate, and the mechanical clamping means holds the periphery of the film-shaped substrate, which is electrically sucked and held on the electrostatically sucking electrode, through a clearance with respect to the film-shaped substrate.

24. 发明专利

JPH1145873A PLASMA-ASHING METHOD 失效
公开(公告)号：JPH1145873A
公开(公告)日：1999-02-16
申请号：JP14000398
申请日：1998-05-21
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI , WATABE TOKUO , TAKADA TOSHINARI
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To attain the ashing of a resist film whose surface layer is hardened and converted, and to attain the ashing of the resist film without giving damages to a substrate. SOLUTION: A substrate 1 to which a resist film is applied is provided in a evacuated processing chamber 4, and a vacuum air discharge outlet and a reactive gas inlet port equipped with a heating means for heating the substrate and a plasma-generating device 9 are provided in the vacuum-processing chamber. This is a method for removing the resist film of the substrate by operating the ashing of the resist film by plasma. A front electrode 13 is provided on the front face of the substrate so as to be faced with an interval in which plasma can be generated, and a rear electrode 16 is provided on the back face of the substrate so as to be faced with an interval in which plasma does not generate. Then, one of the electrodes is connected with a high-frequency power source, the other electrode is connected with ground, the etching of the surface layer of the resist film is carried out, both the electrodes are grounded, the generator is operated, and the ashing of the resist film on the substrate is attained by plasma.

25. 发明专利

JPH10317170A APPARATUS FOR ETCHING BOTH SIDES OF SUBSTRATES 失效
公开(公告)号：JPH10317170A
公开(公告)日：1998-12-02
申请号：JP12401197
申请日：1997-05-14
申请人： ULVAC CORP
发明人： IKEDA HITOSHI , MORIYA MINEHARU , KIKUCHI MASASHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for etching both sides which executes plural times of etching, is small in size, is small in an appropriate floor area and is good in production efficiency. SOLUTION: This apparatus for etching both sides of substrates has a transporting table 28 which has a substrate holder 25 holding the substrates 1 in a vacuum transporting chamber 7 and swivels horizontally, lifting rods 36 which lift the substrates held by the substrate holder and applies potential for etching to the substrates and electrodes which are formed in the upper part in the transporting section and face both sides of the substrates. Etching chambers 29 are formed at the plural points in the upper part in the transporting chamber. These etching chambers are respectively provided with the lifting rods. The apertures 39 of the respective etching chambers into the transporting chamber are provided with opening/closing plates 40 which are made of conductors, enclose the lifting rods by moving from the lateral sides of the apertures and relatively airtightly close the apertures. Such etching chambers are constituted on one of the electrodes facing each other.

26. 发明专利

JPH10310238A SUBSTRATE HOLDING DEVICE FOR VACUUM DEVICE 失效
公开(公告)号：JPH10310238A
公开(公告)日：1998-11-24
申请号：JP12401897
申请日：1997-05-14
申请人： ULVAC CORP
发明人： MORIYA MINEHARU , IKEDA HITOSHI , KIKUCHI MASASHI
IPC分类号： B65G49/00 , G11B5/84 , G11B25/04
摘要： PROBLEM TO BE SOLVED: To provide a holding device capable of securely holding in vacuum a substrate having an opening without damaging it and suited to hold in vacuum the substrates with various sizes of openings. SOLUTION: In a holding device in which a substrate 1 having an opening 2 and located in a vacuum chamber 7 is held by elastic split claws 20 which are opened apart within the opening 2 when pushed by an operating rod reciprocated by a cylinder 22 located outside the vacuum chamber, the operating rod is constructed of a first operating rod 23a direct-operated by the cylinder 22 and a second operating rod 23b activated by a spring 31 in the direction to push the elastic split claws 20 apart, with the movement of the second operating 23b being limited in that direction; the first and second operating rods 23a, 23b are connected together with an axial play therebetween. The cylinder 22 and a closure block 13 hermetically closing a substrate input/output port 8 in the vacuum chamber are mounted on a turning ramp 19 provided outside the vacuum chamber, and the elastic split claws 20 are freely removably provided on the front of the closure block 13.

27. 发明专利

JPH0549749B2 失效
公开(公告)号：JPH0549749B2
公开(公告)日：1993-07-27
申请号：JP7543586
申请日：1986-04-03
申请人： ULVAC CORP
发明人： FUJIOKA TOSHIAKI , KIKUCHI MASASHI
IPC分类号： B01J19/08 , B01J19/00 , C23C14/34 , C23C14/54 , C23C16/50 , C23F4/00

28. 发明专利

JPS6420622A HOLLOW TYPE MAGNETRON ETCHING DEVICE 失效
公开(公告)号：JPS6420622A
公开(公告)日：1989-01-24
申请号：JP17603587
申请日：1987-07-16
申请人： ULVAC CORP
发明人： KIKUCHI MASASHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To facilitate an etching control using a simple structure and to make an etching uniform by applying a magnetic field in parallel with the hollow shaft of a hollow cathode. CONSTITUTION:A cathode is constructed by forming a vacuum section 5 of a hollow section 2 for containing an anode 3, and a strong magnetron discharge is generated on the cathode 1 in response to an RF power to be applied to the cathode 1 by forming a magnetic field by an electromagnet 7 in the axial direction of the section 2. Electrons in the discharge are moved in a cycloid in a direction perpendicular to the magnetic field along the cathode 1 in the axial magnetic field of the section 2. Since the inner face of the cathode 1 is in an endless state, the electrons are not concentrated, but moved, and a uniform plasma region is automatically formed on the cathode 1 particularly without control to cover a substrate 11 placed on the cathode 1 with a plasma of uniform density. Thus, an etching uniformity is enhanced under an easy etching control with a simple structure.

29. 发明专利

JPS5943991B2 JPS5943991B2 - 失效
公开(公告)号：JPS5943991B2
公开(公告)日：1984-10-25
申请号：JP1243380
申请日：1980-02-06
申请人： Ulvac Corp
发明人： HATSUTORI SHUZO , MORYAMA KOJI , KIKUCHI MASASHI
IPC分类号： C23F4/00 , C23F1/08 , H01L21/302 , H01L21/3065 , H05H1/46

30. 发明专利

JPS5950179A Cleaning method of vacuum vessel 失效
标题翻译：真空容器清洁方法
公开(公告)号：JPS5950179A
公开(公告)日：1984-03-23
申请号：JP15952782
申请日：1982-09-16
申请人： Ulvac Corp
发明人： KIKUCHI MASASHI
IPC分类号： C23F4/00 , C23G5/00
CPC分类号： C23G5/00
摘要： PURPOSE:To judge exactly the end of cleaning in the stage of generating plasma in a vacuum vessel of a sputter etching device or the like and cleaning the vessel, by flowing gaseous O2 into the vessel. CONSTITUTION:When the vacuum vessel 1 of, for example, plasma CVD device repeats CVD treatment, a hydrocarbon polymer, etc. stick gradually on the inside wall thereof and contamination progresses. The contaminants can be removed by the cleaning wherein the contaminants are liberated from the wall surfaces by the plasma generated between electrodes 2, 2 in the absence of the work 6 and are discharged through an evacuation port 3, but the end point of the cleaning is uncertain. Thereupon, gaseous O2 is introduced through a circuit 7 into the vessel 1 to create an O2 atmosphere and plasma is generated, then the intensity of the emission wavelength of the O atom radicals in the vessel 1 is detected with a monochrometer 9 or the like through a quartz window 8 provided on one side of the vessel 1. The intensity is low in the initial period of the cleaning but it rises once around the end and remains constant after the end and therefore the completion of the cleaning is judged.
摘要翻译：目的：在溅射蚀刻装置等的真空容器中产生等离子体的阶段中的清洁结束，并通过将气态O 2流入容器来清洁容器。构成：当例如等离子体CVD装置的真空容器1重复进行CVD处理时，烃类聚合物等在其内壁上逐渐粘着，污染进行。可以通过清洁去除污染物，其中污染物通过在不存在工件6的情况下在电极2,2之间产生的等离子体从壁表面释放出来，并通过抽气口3排出，但是清洁的终点是不确定。因此，气体O 2通过电路7引入容器1中以产生O 2气氛并产生等离子体，然后用单色仪9等检测容器1中的O原子的发射波长的强度设置在容器1的一侧的石英窗8.在清洁的初始阶段，强度低，但是在端部上升一次，并且在端部之后保持恒定，因此判断清洁的完成。

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