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21. 发明授权

US07195846B2 Methods of manufacturing photomask blank and photomask 有权
标题翻译：制造光掩模坯料和光掩模的方法
公开(公告)号：US07195846B2
公开(公告)日：2007-03-27
申请号：US10724734
申请日：2003-12-02
申请人： Hideo Kaneko , Yukio Inazuki , Tetsushi Tsukamoto , Masayuki Mogi , Katsuya Okumura
发明人： Hideo Kaneko , Yukio Inazuki , Tetsushi Tsukamoto , Masayuki Mogi , Katsuya Okumura
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/82 , G03F1/26 , G03F1/32 , G03F1/68
摘要： A photomask blank having a film of at least one layer formed on a substrate is manufactured by forming a film on a substrate and irradiating the film with light from a flash lamp. A photomask is manufactured from the thus manufactured photomask blank by forming a patterned resist on the film on the blank by photolithography, etching away those portions of the film which are not covered with the resist, and removing the resist. The photomask blank and photomask have minimized warpage and improved chemical resistance.
摘要翻译：通过在基板上形成膜并用来自闪光灯的光照射薄膜来制造具有形成在基板上的至少一层的膜的光掩模坯料。通过光刻法在坯料上的膜上形成图案化的抗蚀剂，蚀刻掉未被抗蚀剂覆盖的膜的那些部分，并除去抗蚀剂，由这样制造的光掩模坯料制造光掩模。光掩模坯料和光掩模具有最小的翘曲和改善的耐化学性。

22. 发明授权

US08980503B2 Binary photomask blank and binary photomask making method 有权
标题翻译：二元光掩模空白和二进制光掩模制作方法
公开(公告)号：US08980503B2
公开(公告)日：2015-03-17
申请号：US13196952
申请日：2011-08-03
申请人： Hiroki Yoshikawa , Yukio Inazuki , Kazuhiro Nishikawa , Hideo Kaneko
发明人： Hiroki Yoshikawa , Yukio Inazuki , Kazuhiro Nishikawa , Hideo Kaneko
IPC分类号： G03F1/50 , G03F1/76 , G03F1/00 , G03F1/58 , G03F1/32
CPC分类号： G03F1/14 , G03F1/32 , G03F1/50 , G03F1/58
摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm , and a N+O content of 25-40 at % at its lower surface and 10-23 at % at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at % at its lower surface and 45-55 at % at its upper surface.
摘要翻译：二元光掩模坯料在透明基板上具有包括厚度为35-60nm的基板侧和表面侧的组成梯度层的遮光膜，由含有过渡金属和N和/ 基底侧组成梯度层的厚度为10-58.5nm，N + O含量在其下表面为25-40at％，在其上表面为10-23at％。表面侧组成梯度层的厚度为1.5-8nm，其下表面的N + O含量为10-45原子％，其上表面为45-55原子％。

23. 发明授权

US08475978B2 Photomask blank and making method, photomask, light pattern exposure method, and design method of transition metal/silicon base material film 有权
标题翻译：光掩模坯料和制造方法，光掩模，光图案曝光方法以及过渡金属/硅基材料薄膜的设计方法
公开(公告)号：US08475978B2
公开(公告)日：2013-07-02
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki Yoshikawa , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
IPC分类号： G03F1/22 , G03F1/24
CPC分类号： G03F1/72 , G03F1/32 , G03F1/48 , G03F1/50
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译：光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

24. 发明申请

US20100248090A1 PHOTOMASK BLANK AND PHOTOMASK 有权
标题翻译： PHOTOMASK BLANK和PHOTOMASK
公开(公告)号：US20100248090A1
公开(公告)日：2010-09-30
申请号：US12750044
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/58 , G03F1/80
摘要： A photomask blank comprises a transparent substrate, a light-shielding film of an optionally transition metal-containing silicon material, and an etching mask film of a chromium compound base material. The etching mask film consists of multiple layers of different composition which are deposited by reactive sputtering, the multiple layers including, in combination, a first layer of a material which imparts a compression stress when deposited on the substrate as a single composition layer and a second layer of a material which imparts a tensile stress when deposited on the substrate as a single composition layer.
摘要翻译：光掩模坯料包括透明基板，任选含过渡金属的硅材料的遮光膜和铬化合物基材的蚀刻掩模膜。蚀刻掩模膜由通过反应溅射沉积的不同组成的多层组成，多层组合包括当作为单一组合物层沉积在基板上时施加压缩应力的材料的第一层，第二层当作为单一组合物层沉积在基底上时施加拉伸应力的材料层。

25. 发明申请

US20100246932A1 METHOD FOR INSPECTING AND JUDGING PHOTOMASK BLANK OR INTERMEDIATE THEREOF 有权
标题翻译：用于检查和判断光电隔离层或其中间体的方法
公开(公告)号：US20100246932A1
公开(公告)日：2010-09-30
申请号：US12750023
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.
摘要翻译：通过（A）测量具有要检查的应力膜的光掩模坯料的表面形貌来检查在基板上具有膜的光掩模坯料，（B）从光掩模坯料除去膜以提供经处理的基板（C ）测量经处理的基底的表面形貌，以及（D）将光掩模毛坯的表面形貌与经处理的基底的表面形貌进行比较，从而评估膜中的应力。

26. 发明申请

US20100176087A1 PHOTOMASK MAKING METHOD, PHOTOMASK BLANK AND DRY ETCHING METHOD 有权
标题翻译：光电制造方法，光电隔离和干蚀刻方法
公开(公告)号：US20100176087A1
公开(公告)日：2010-07-15
申请号：US12687539
申请日：2010-01-14
申请人： Shinichi Igarashi , Hideo Kaneko , Yukio Inazuki , Kazuhiro Nishikawa
发明人： Shinichi Igarashi , Hideo Kaneko , Yukio Inazuki , Kazuhiro Nishikawa
IPC分类号： B44C1/22 , G03F1/00
CPC分类号： G03F1/80 , G03F1/14 , G03F1/26 , G03F1/32
摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/C1 ratio for selectively etching away the silicon base material layer of the light-shielding film.
摘要翻译：通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / C1比对含有氧的氯气对所述坯料进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层，屏蔽膜。

27. 发明授权

US07632609B2 Fabrication method of photomask-blank 有权
标题翻译：光掩模坯料的制造方法
公开(公告)号：US07632609B2
公开(公告)日：2009-12-15
申请号：US11545451
申请日：2006-10-11
申请人： Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko , Yukio Inazuki
发明人： Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko , Yukio Inazuki
IPC分类号： G03F1/14
CPC分类号： G03F1/32 , Y10T428/31616
摘要： A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.
摘要翻译：具有最基本结构的感受体具有包括第一和第二透明石英部分和夹在其间的不透明石英部分的三层结构。例如，不透明石英部分由“发泡石英”制成。此外，考虑到在基板上形成的薄膜的组成或厚度以及各种不同的形状，不透明石英部分对闪光的不透明度被确定为基于不透明石英部分的材料或厚度在适当范围内关于闪光照射等期间的照射光的能量的条件。堆叠结构可以由具有不同不透明度的多个不透明石英层的堆叠构成。

28. 发明授权

US08417018B2 Method for inspecting and judging photomask blank or intermediate thereof 有权
标题翻译：检查和判断光掩模坯料或其中间体的方法
公开(公告)号：US08417018B2
公开(公告)日：2013-04-09
申请号：US12750023
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.
摘要翻译：通过（A）测量具有要检查的应力膜的光掩模坯料的表面形貌来检查在基板上具有膜的光掩模坯料，（B）从光掩模坯料除去膜以提供经处理的基板（C ）测量经处理的基底的表面形貌，以及（D）将光掩模毛坯的表面形貌与经处理的基底的表面形貌进行比较，从而评估膜中的应力。

29. 发明授权

US08304146B2 Photomask making method, photomask blank and dry etching method 有权
标题翻译：光掩模制作方法，光掩模坯料和干蚀刻方法
公开(公告)号：US08304146B2
公开(公告)日：2012-11-06
申请号：US12687539
申请日：2010-01-14
申请人： Shinichi Igarashi , Hideo Kaneko , Yukio Inazuki , Kazuhiro Nishikawa
发明人： Shinichi Igarashi , Hideo Kaneko , Yukio Inazuki , Kazuhiro Nishikawa
IPC分类号： G03F1/26
CPC分类号： G03F1/80 , G03F1/14 , G03F1/26 , G03F1/32
摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.
摘要翻译：通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / Cl比例用含氧氯气对所述毛坯进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层，屏蔽膜。

30. 发明申请

US20120034551A1 BINARY PHOTOMASK BLANK AND BINARY PHOTOMASK MAKING METHOD 有权
标题翻译： BINARY PHOTOMASK BLANK和BINARY PHOTOMASK制作方法
公开(公告)号：US20120034551A1
公开(公告)日：2012-02-09
申请号：US13196952
申请日：2011-08-03
申请人： Hiroki Yoshikawa , Yukio Inazuki , Kazuhiro Nishikawa , Hideo Kaneko
发明人： Hiroki Yoshikawa , Yukio Inazuki , Kazuhiro Nishikawa , Hideo Kaneko
IPC分类号： G03F1/14
CPC分类号： G03F1/14 , G03F1/32 , G03F1/50 , G03F1/58
摘要： A binary photomask blank has on a transparent substrate a light-shielding film including substrate-side and surface-side compositionally graded layers, having a thickness of 35-60 nm, and composed of a silicon base material containing a transition metal and N and/or O. The substrate-side compositionally graded layer has a thickness of 10-58.5 nm, and a N+O content of 25-40 at % at its lower surface and 10-23 at % at its upper surface. The surface-side compositionally graded layer has a thickness of 1.5-8 nm, and a N+O content of 10-45 at % at its lower surface and 45-55 at % at its upper surface.
摘要翻译：二元光掩模坯料在透明基板上具有包括厚度为35-60nm的基板侧和表面侧的组成梯度层的遮光膜，由含有过渡金属和N和/ 基底侧组成梯度层的厚度为10-58.5nm，N + O含量在其下表面为25-40at％，在其上表面为10-23at％。表面侧组成梯度层的厚度为1.5-8nm，其下表面的N + O含量为10-45原子％，其上表面为45-55原子％。

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