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21. 发明申请

US20090167142A1 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US20090167142A1
公开(公告)日：2009-07-02
申请号：US12318340
申请日：2008-12-24
申请人： Hideki Kokubu , Toshimasa Hayashi , Yuhki Ito , Michio Miyawaki
发明人： Hideki Kokubu , Toshimasa Hayashi , Yuhki Ito , Michio Miyawaki
IPC分类号： H01J5/48
CPC分类号： H01L33/486 , H01L33/62 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： In a side surface light emitting type light emitting device mounted on the surface of a wiring board, the light emitting device comprises: a base body part having a reflecting case and a terminal holding part formed integrally with the reflecting case in the rear part of the reflecting case; and lead members inserted into the base body part, having a pair of connecting parts including base parts of the connecting parts drawn out from the lower surface of the base body part and bent along the lower surface and side bending parts provided in the base parts of the connecting parts and bent along the side surfaces of the terminal holding part and connected to a pattern of the wiring board; and is characterized in that the base parts of the connecting parts are provided with protruding parts protruding toward the center of the lower surface of the terminal holding part and cut-out parts are provided for accommodating the protruding parts in the lower surface of the terminal holding part.
摘要翻译：在安装在布线板的表面上的侧面发光型发光器件中，发光器件包括：基体部分，其具有反射壳体和端子保持部分，该反射壳体与端子保持部分一体形成在反射壳体的后部反映案例以及引导部件插入到基体部分中，具有一对连接部分，包括从基体部分的下表面引出并沿着下表面弯曲的连接部分的基部，以及设置在基体部分的基部中的侧弯曲部分所述连接部分沿着所述端子保持部分的侧表面弯曲并连接到所述布线板的图案; 其特征在于，连接部的基部具有朝向端子保持部的下表面的中心突出的突出部，并且设置有用于将突出部容纳在端子保持部的下表面中的切口部部分。

22. 发明授权

US07042012B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07042012B2
公开(公告)日：2006-05-09
申请号：US10515655
申请日：2003-04-18
申请人： Masanobu Senda , Mitsuhiro Inoue , Jun Ito , Toshimasa Hayashi , Kazuki Nishijima , Naoki Shibata
发明人： Masanobu Senda , Mitsuhiro Inoue , Jun Ito , Toshimasa Hayashi , Kazuki Nishijima , Naoki Shibata
IPC分类号： H01L27/15
CPC分类号： H01L33/40 , H01L33/145 , H01L33/44
摘要： An insulation film 150 made of SiO2 is formed on a p-type layer 106, and a multiple thick film positive electrode 120, which is a metal film formed through metal deposition, is formed on the insulation film 150 and on the p-type layer 106 at the central portion of which has a window and is exposed. The insulation film 150 has a thickness of one fourth multiple of emission wavelength. Thickness of the insulation film 150 is generally determined by multiplying one fourth of intramedium emission wavelength by an odd number. By interference effect, directivity of radiated light along the optical axis direction can be improved.
摘要翻译：在p型层106上形成由SiO 2构成的绝缘膜150，并且在绝缘膜上形成作为通过金属沉积形成的金属膜的多重厚膜正极120 并且在其中心部分具有窗口并露出的p型层106上。绝缘膜150具有发射波长的四分之一倍的厚度。绝缘膜150的厚度通常通过将四分之一的内部发射波长乘以奇数来确定。通过干涉效应，可以提高辐射光沿光轴方向的方向性。

23. 发明授权

US08643271B2 LED lamp module 有权
标题翻译： LED灯模组
公开(公告)号：US08643271B2
公开(公告)日：2014-02-04
申请号：US12320824
申请日：2009-02-05
申请人： Shota Shimonishi , Hiroyuki Tajima , Toshimasa Hayashi , Hideki Kokubu
发明人： Shota Shimonishi , Hiroyuki Tajima , Toshimasa Hayashi , Hideki Kokubu
IPC分类号： H01L23/02
CPC分类号： F21V29/70 , F21K9/00 , F21V19/0015 , F21V29/87 , F21V29/89 , H01L33/64 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014
摘要： The present invention provides a LED lamp module including a metal base, a flexible board mounted on the metal base and having a through hole, a surface mounted type LED lamp including a ceramic package having a projection portion on a back of the ceramic package, a LED chip mounted on the ceramic package, and a light output surface. The projection part is thermally connected with the metal base through the through hole, and the LED lamp is electrically connected with the flexible board through an electric conductive member at a portion other than the projection portion. The LED lamp module includes a cover covering a part of the LED lamp other than the light output surface and the flexible board and pressing the LED lamp.
摘要翻译：本发明提供一种LED灯模块，包括金属基座，安装在金属基底上的柔性基板，具有通孔，表面安装型LED灯，其包括在陶瓷封装的背面上具有突出部分的陶瓷封装， LED芯片安装在陶瓷封装上，并具有光输出面。突出部分通过通孔与金属基座热连接，并且LED灯通过导电构件在突出部分之外的部分处与柔性板电连接。 LED灯模块包括覆盖除了光输出表面之外的LED灯的一部分的盖和柔性板并按压LED灯。

24. 外观设计

USD653222S1 Light emitting diode 有权
公开(公告)号：USD653222S1
公开(公告)日：2012-01-31
申请号：US29371490
申请日：2011-03-21
申请人： Kosei Fukui , Hideki Kokubu , Toshimasa Hayashi
设计人： Kosei Fukui , Hideki Kokubu , Toshimasa Hayashi

25. 发明授权

US07128846B2 Process for producing group III nitride compound semiconductor 有权
标题翻译：制备III族氮化物化合物半导体的方法
公开(公告)号：US07128846B2
公开(公告)日：2006-10-31
申请号：US10505948
申请日：2003-02-24
申请人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
发明人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
IPC分类号： C23F1/00 , C30B29/38
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.
摘要翻译：一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

26. 发明授权

US07087930B2 Semiconductor light emitting element and method of making same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US07087930B2
公开(公告)日：2006-08-08
申请号：US10808422
申请日：2004-03-25
申请人： Masanobu Senda , Jun Ito , Kazuki Nishijima , Toshimasa Hayashi
发明人： Masanobu Senda , Jun Ito , Kazuki Nishijima , Toshimasa Hayashi
IPC分类号： H01L27/15
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02647
摘要： A semiconductor light emitting element that is made by using the lateral growth function of semiconductor crystal while providing an ELO mask on a crystal growth surface of a crystal growth substrate. At least part of a sidewall of the ELO mask is provided with an inclined plane that is inclined to the crystal growth surface such that the semiconductor crystal to be formed on the ELO mask substantially has no void.
摘要翻译：半导体发光元件，其通过使用半导体晶体的横向生长功能，同时在晶体生长衬底的晶体生长表面上提供ELO掩模。 ELO掩模的侧壁的至少一部分设置有倾斜于晶体生长表面的倾斜平面，使得要在ELO掩模上形成的半导体晶体基本上没有空隙。

27. 发明申请

US20060101757A1 Lamp 失效
标题翻译：灯
公开(公告)号：US20060101757A1
公开(公告)日：2006-05-18
申请号：US11239470
申请日：2005-09-30
申请人： Atsushi Tsuzuki , Yuji Takahashi , Toshimasa Hayashi , Katsunori Arakane
发明人： Atsushi Tsuzuki , Yuji Takahashi , Toshimasa Hayashi , Katsunori Arakane
IPC分类号： E04B1/74
CPC分类号： H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , Y10S362/80 , H01L2924/00014
摘要： The present invention provides a lamp that includes a reflection case and a light emitting element. A central portion of a lower wall inner face of the reflection case is stepwise lowered to form a lower wall enlarged inner face, and both faces are made continuous with each other through right and left perpendicular hanging inner faces, so that a central portion of a back wall inner face and a front opening are downwardly enlarged in a rectangular shape, respectively. The light emitting element is mounted on a front face of a sub mount table. A back face of the sub mount table is fixed to the central portion of the back wall inner face, and right and left end faces of the sub mount table are positioned to right and left perpendicular hanging inner faces when the sub mount table is fixed.
摘要翻译：本发明提供了一种包括反射壳和发光元件的灯。反射壳体的下壁内表面的中心部分逐步降低以形成下壁扩大的内表面，并且两个面通过左右垂直悬挂的内表面彼此连续地形成，使得一个中心部分后壁内表面和前开口分别向下扩大为矩形。发光元件安装在副安装台的正面上。副安装台的背面固定在后壁内表面的中央部分，并且在安装副安装台时，副安装台的右侧和左侧端面位于左右垂直悬挂的内表面。

28. 发明申请

US20050118825A1 Process for producing group III nitride compound semiconductor 有权
标题翻译：制备III族氮化物化合物半导体的方法
公开(公告)号：US20050118825A1
公开(公告)日：2005-06-02
申请号：US10505948
申请日：2003-02-24
申请人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
发明人： Kazuki Nishijima , Masanobu Senda , Toshiaki Chiyo , Jun Ito , Naoki Shibata , Toshimasa Hayashi
IPC分类号： C30B29/38 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L33/12 , H01L33/16 , H01L33/32 , H01L21/311
CPC分类号： C30B29/403 , C30B25/02 , C30B25/18 , C30B29/40 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02647
摘要： A method including the steps of: modifying at least one part of a sapphire substrate by dry etching to thereby form any one of a dot shape, a stripe shape, a lattice shape, etc. as an island shape on the sapphire substrate; forming an AlN buffer layer on the sapphire substrate; and epitaxially growing a desired Group III nitride compound semiconductor vertically and laterally so that the AlN layer formed on a modified portion of the surface of the sapphire substrate is covered with the desirably Group III nitride compound semiconductor without any gap while the AlN layer formed on a non-modified portion of the surface of the sapphire substrate is used as a seed, wherein the AlN buffer layer is formed by means of reactive sputtering with Al as a target in an nitrogen atmosphere.
摘要翻译：一种方法，包括以下步骤：通过干法蚀刻来改变蓝宝石衬底的至少一部分，从而在蓝宝石衬底上形成岛形状的点状，条状，格子状等任意一种; 在蓝宝石衬底上形成AlN缓冲层; 并且垂直和横向地外延生长期望的III族氮化物化合物半导体，使得形成在蓝宝石衬底的表面的改性部分上的AlN层被期望的III族氮化物半导体覆盖而没有任何间隙，同时形成在AlN层上的AlN层将蓝宝石衬底的表面的未改性部分用作种子，其中通过在氮气气氛中以Al作为靶的反应溅射形成AlN缓冲层。

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