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21. 发明申请

US20070176320A1 MOLD FOR IMPRINT, PROCESS FOR PRODUCING MINUTE STRUCTURE USING THE MOLD, AND PROCESS FOR PRODUCING THE MOLD 失效
标题翻译：模具模具，使用模具生产分钟结构的过程，以及生产模具的过程
公开(公告)号：US20070176320A1
公开(公告)日：2007-08-02
申请号：US11627022
申请日：2007-01-25
申请人： Takashi Nakamura , Toru Den
发明人： Takashi Nakamura , Toru Den
IPC分类号： B29C33/40 , B29C59/00
CPC分类号： G03F7/0017 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold for imprint capable of forming a reduced seam or seamless pattern, on a surface of a substrate, having larger area than that of the mold includes a first pattern area comprising a plurality of first recesses; and a second pattern area, comprising a plurality of second recesses, for being used as an alignment mark. The first pattern area and the second pattern area have an equal height at their outermost surfaces. The first recesses and the second recesses have different depths. The first pattern area and the second pattern area have an equal cyclic interval.
摘要翻译：在基板的表面上形成具有比模具面积大的面的能够形成减小的接缝或无缝图案的印模用模具包括：第一图案区域，包括多个第一凹部; 以及第二图案区域，包括多个第二凹部，用作对准标记。第一图案区域和第二图案区域在其最外表面具有相等的高度。第一凹槽和第二凹槽具有不同的深度。第一图案区域和第二图案区域具有相等的循环间隔。

22. 发明申请

US20070160824A1 STRUCTURE AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：结构及其生产工艺
公开(公告)号：US20070160824A1
公开(公告)日：2007-07-12
申请号：US11687209
申请日：2007-03-16
申请人： Shigeru Ichihara , Toru Den
发明人： Shigeru Ichihara , Toru Den
IPC分类号： B32B3/26
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/746 , G11B5/855 , Y10T428/249953
摘要： A novel structure is provided in which an ordered alloy material is filled in pores of the structure. A process for producing the structure is also provided. The process comprises a first step for forming an alloy in pores of a porous layer, a second step for forming a film composed of a second material on the porous layer, and a third step for heat-treating the porous layer having the film. Further a process is provided for producing a structure containing fine L10-crystal grains with a low-temperature heat treatment. This process comprises a process for producing a structure containing a magnetic substance dispersed in a nonmagnetic material, comprising: forming a first layer containing a magnetic substance A dispersed in a nonmagnetic material, forming a second layer containing a magnetic substance B on the first layer, and heating the first layer and the second layer during or after formation of the second layer to connect the magnetic substance A and the magnetic substance B to form an ordered alloy.
摘要翻译：提供了一种新颖的结构，其中有序合金材料填充在结构的孔中。还提供了一种制造该结构的方法。该方法包括在多孔层的孔中形成合金的第一步骤，用于在多孔层上形成由第二材料构成的膜的第二步骤和用于热处理具有该膜的多孔层的第三步骤。此外，提供了一种通过低温热处理制造含有细L 1 O 2结晶晶粒的结构的方法。该方法包括用于制造包含分散在非磁性材料中的磁性物质的结构的方法，包括：形成包含分散在非磁性材料中的磁性物质A的第一层，在第一层上形成含有磁性物质B的第二层，以及在第二层形成期间或之后加热第一层和第二层以连接磁性物质A和磁性物质B以形成有序的合金。

23. 发明授权

US09360566B2 Radiation detector 有权
标题翻译：辐射检测器
公开(公告)号：US09360566B2
公开(公告)日：2016-06-07
申请号：US13552074
申请日：2012-07-18
申请人： Tatsuya Saito , Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
发明人： Tatsuya Saito , Tatsuya Iwasaki , Nobuhiro Yasui , Toru Den
IPC分类号： G01T1/20 , G01T1/202 , G21K4/00
CPC分类号： G01T1/202 , G01T1/2008 , G21K4/00 , G21K2004/04 , G21K2004/06
摘要： Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1≦n3≦n2 and n2≦n3≦n1.
摘要翻译：提供一种辐射检测器，包括：包括多个像素的二维光接收元件; 以及具有二维配置在二维光接收元件的受光面上的多个闪烁器晶体的闪烁器层，其中：所述闪烁体晶体包括两个晶相，所述晶体相是包括包含多个柱状晶体在垂直于二维光接收元件的光接收表面的方向上延伸并具有折射率n1，第二晶相包括存在于多个柱状晶体之间并具有折射率n2的材料; 折射率n3的材料被放置在相邻的闪烁体晶体之间，折射率n3满足n1和n1E之间的关系; n3和n1E; n2和n2和n1E之间的关系; n3和n1E; n1。

24. 发明授权

US09110176B2 Radiation detecting element 有权
标题翻译：辐射检测元件
公开(公告)号：US09110176B2
公开(公告)日：2015-08-18
申请号：US13473005
申请日：2012-05-16
申请人： Tomoyuki Oike , Nobuhiro Yasui , Toru Den , Yoshihiro Ohashi , Ryoko Horie
发明人： Tomoyuki Oike , Nobuhiro Yasui , Toru Den , Yoshihiro Ohashi , Ryoko Horie
IPC分类号： G01T1/20 , G01T1/202
CPC分类号： G01T1/202 , G01T1/2018
摘要： Provided is a radiation detecting element, including: needle crystal scintillators and a protruding pattern in which: one end of the needle crystal scintillators is in contact with of upper surfaces of the multiple protrusions; a gap corresponding to a gap between the multiple protrusions is provided between portions of the needle crystal scintillators in contact with the upper surfaces of the multiple protrusions; and a number of the needle crystal scintillators in contact with one of the upper surfaces is 5 or less. Conventionally, since the needle crystals exhibit a state of a polycrystalline film in an early stage of vapor deposition, and light also spreads in a horizontal direction, the light received by a photodetector portion and the spatial resolution was lower than ideal values. The present invention enables the deviating region to be the ideal state in an early stage of growth.
摘要翻译：本发明提供一种辐射检测元件，包括：针状晶体闪烁体和突出图案，其中：针状晶体闪烁体的一端与多个突起的上表面接触; 在与多个突起的上表面接触的针状晶体闪烁体的部分之间设置与多个突起之间的间隙对应的间隙; 并且与上述一个表面接触的多个针状晶体闪烁体为5个以下。通常，由于针状晶体在气相沉积的早期阶段呈现多晶膜的状态，并且光也在水平方向上扩散，所以由光电检测器部分接收的光和空间分辨率低于理想值。本发明使得偏差区域在生长的早期阶段成为理想状态。

25. 发明授权

US09080102B2 Porous scintillator crystal 有权
标题翻译：多孔闪烁体晶体
公开(公告)号：US09080102B2
公开(公告)日：2015-07-14
申请号：US14005154
申请日：2012-03-22
申请人： Yoshihiro Ohashi , Nobuhiro Yasui , Toru Den
发明人： Yoshihiro Ohashi , Nobuhiro Yasui , Toru Den
IPC分类号： G01T1/10 , C09K11/61 , G21K4/00 , G01T1/20 , G01T1/202
CPC分类号： C09K11/616 , C09K11/615 , G01T1/20 , G01T1/202 , G21K4/00 , Y10T428/24273 , Y10T428/249921
摘要： A porous scintillator crystal capable of suppressing scattering of light that represents a high spatial resolution is provided. The porous scintillator crystal comprises a porous structure including voids, wherein the porous structure is a phase-separated structure having voids formed therein and comprises materials constituting a eutectic composition of the phase-separated structure and at least one void in the porous structure extend in a direction perpendicular to a principal plane of the porous scintillator crystal.
摘要翻译：提供能够抑制表示高空间分辨率的光的散射的多孔闪烁体晶体。多孔闪烁体晶体包括多孔结构，其包括空隙，其中多孔结构是在其中形成空隙的相分离结构，并且包括构成相分离结构的共晶组成的材料，并且多孔结构中的至少一个空隙在方向垂直于多孔闪烁体晶体的主平面。

26. 发明授权

US08586931B2 Scintillator having phase separation structure and radiation detector using the same 有权
标题翻译：具有相分离结构的闪烁体和使用其的放射线检测器
公开(公告)号：US08586931B2
公开(公告)日：2013-11-19
申请号：US13540948
申请日：2012-07-03
申请人： Ryoko Horie , Nobuhiro Yasui , Yoshihiro Ohashi , Toru Den
发明人： Ryoko Horie , Nobuhiro Yasui , Yoshihiro Ohashi , Toru Den
IPC分类号： G01T1/10
CPC分类号： G01T1/2006 , G01T1/202
摘要： Provided is a scintillator used for detecting radiation in an X-ray CT scanner or the like, the scintillator having a unidirectional phase separation structure having an optical waveguide function, which eliminates the need of formation of partition walls for preventing crosstalks. The scintillator has the phase separation structure including: a first crystal phase including multiple columnar crystals having unidirectionality; and a second crystal phase filling space on the side of the first crystal phase. The second crystal phase includes a material represented by Cs3Cu2[XaY1-a]5, where X and Y are elements which are different from each other and which are selected from the group consisting of I, Br, and Cl, and 0≦a≦1 is satisfied.
摘要翻译：提供了用于检测X射线CT扫描仪等中的辐射的闪烁体，该闪烁体具有具有光波导功能的单向相分离结构，其消除了形成用于防止串扰的分隔壁的需要。闪烁体具有相分离结构，包括：包含具有单向的多个柱状晶体的第一晶相; 以及在第一结晶相侧的第二晶相填充空间。第二结晶相包括由Cs 3 Cu 2 [X y Y 1-a] 5表示的材料，其中X和Y是彼此不同的并且选自I，Br和Cl的元素，并且0 @ a @ 1满足。

27. 发明授权

US08520799B2 Analysis method, radiation imaging apparatus using analysis method, and analysis program for executing analysis method 失效
标题翻译：分析方法，辐射成像仪使用分析方法，分析程序执行分析方法
公开(公告)号：US08520799B2
公开(公告)日：2013-08-27
申请号：US13060112
申请日：2009-10-28
申请人： Kentaro Nagai , Toru Den
发明人： Kentaro Nagai , Toru Den
IPC分类号： G03H5/00
CPC分类号： G06T7/0002 , A61B6/4291 , A61B6/484 , G01J9/02 , G01N23/04 , G01N23/20075 , G01N2223/401 , G21K1/06 , G21K2201/06 , G21K2201/067
摘要： An analysis method for use in a radiation imaging apparatus employing intensity information of interference fringes of radiation rays that have passed through a detected object includes the steps of generating first phase information of the detected object wrapped into a range of 2π from the intensity information of the interference fringes; generating information on an absorption intensity gradient of the detected object from the intensity information of the interference fringes; generating a weighting function on the basis of an absolute value of a gradient in the information on the absorption intensity gradient; and generating second phase information by unwrapping the first phase information by using the weighting function.
摘要翻译：一种用于使用已经通过检测对象的辐射线的干涉条纹的强度信息的放射线成像设备的分析方法包括以下步骤：从被检测到的物体的强度信息生成包含在2pi范围内的检测对象的第一相位信息干涉条纹; 根据干涉条纹的强度信息生成关于被检测物体的吸收强度梯度的信息; 基于关于吸收强度梯度的信息中的梯度的绝对值生成加权函数; 以及通过使用所述加权函数展开所述第一相位信息来产生第二相位信息。

28. 发明授权

US08329001B2 Structure, magnetic recording medium, and method of producing the same 失效
标题翻译：结构，磁记录介质及其制造方法
公开(公告)号：US08329001B2
公开(公告)日：2012-12-11
申请号：US12040223
申请日：2008-02-29
申请人： Nobuhiro Yasui , Ryoko Horie , Toru Den
发明人： Nobuhiro Yasui , Ryoko Horie , Toru Den
IPC分类号： C23C16/00 , C23C14/34
CPC分类号： G11B5/667 , G11B5/7325 , G11B5/8404 , G11B5/855
摘要： To provide a filmy structure of a nanometer size having a phase-separated structure effective for the case where a compound can be formed between two kinds of materials. A structure constituted by a first member containing a compound between an element A except both Si and Ge and SinGe1-n (where 0≦n≦1) and a second member containing one of the element A and SinGe1-n (where 0≦n≦1), in which one of the first member and the second member is a columnar member, formed on a substrate, whose side face is surrounded by the other member, the ratio Dl/Ds of an average diameter Dl in the major axis direction to an average diameter Ds in the minor axis direction of a transverse sectional shape of the columnar member is less than 5, and the element A is one of Li, Na, Mg, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Rb, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Cs, Ba, La, Hf, Ta, W, Re, Os, Ir, Pt, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and B.
摘要翻译：为了提供具有相分离结构的纳米尺寸的薄膜结构，对于在两种材料之间可以形成化合物的情况是有效的。由除了Si和Ge之外的元素A和SinGe1-n（其中0＆lt; n1E; n＆nlE; 1）之间的元素A和包含元素A和SinGe1-n之一（其中0＆nlE; n＆nlE; 1）的第二元素 ; 1），其中所述第一部件和所述第二部件中的一个是柱状部件，形成在其侧面被另一个部件包围的基板上，平均直径D1在长轴方向上的比率D1 / Ds 柱状构件的横截面形状的短轴方向的平均直径Ds小于5，元素A为Li，Na，Mg，K，Ca，Sc，Ti，V，Cr，Mn ，Fe，Co，Ni，Cu，Rb，Sr，Y，Zr，Nb，Mo，Ru，Rh，Pd，Cs，Ba，La，Hf，Ta，W，Re，Os，Ir，Pt，Ce，Pr ，Nd，Sm，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu和B.

29. 发明授权

US08274078B2 Metal oxynitride semiconductor containing zinc 有权
标题翻译：含锌的金属氮氧化物半导体
公开(公告)号：US08274078B2
公开(公告)日：2012-09-25
申请号：US12532185
申请日：2008-04-23
申请人： Naho Itagaki , Tatsuya Iwasaki , Masatoshi Watanabe , Toru Den
发明人： Naho Itagaki , Tatsuya Iwasaki , Masatoshi Watanabe , Toru Den
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L29/247
摘要： Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and In and at least one element selected from the group consisting of Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less.
摘要翻译：提供了包含金属氮氧化物的氧氮化物半导体。金属氮氧化物含有Zn和In以及选自Ga，Sn，Mg，Si，Ge，Y，Ti，Mo，W和Al中的至少一种元素。金属氮氧化物的原子组成比为N，N /（N + O），为7原子％以上且在80原子％以下。

30. 发明授权

US08153189B2 Structure and process for production thereof 有权
标题翻译：其生产的结构和方法
公开(公告)号：US08153189B2
公开(公告)日：2012-04-10
申请号：US11687209
申请日：2007-03-16
申请人： Shigeru Ichihara , Toru Den
发明人： Shigeru Ichihara , Toru Den
IPC分类号： B32B3/26
CPC分类号： G11B5/82 , B82Y10/00 , G11B5/746 , G11B5/855 , Y10T428/249953
摘要： A novel structure is provided in which an ordered alloy material is filled in pores of the structure. A process for producing the structure is also provided. The process comprises a first step for forming an alloy in pores of a porous layer, a second step for forming a film composed of a second material on the porous layer, and a third step for heat-treating the porous layer having the film. Further a process is provided for producing a structure containing fine L10-crystal grains with a low-temperature heat treatment. This process comprises a process for producing a structure containing a magnetic substance dispersed in a nonmagnetic material, comprising: forming a first layer containing a magnetic substance A dispersed in a nonmagnetic material, forming a second layer containing a magnetic substance B on the first layer, and heating the first layer and the second layer during or after formation of the second layer to connect the magnetic substance A and the magnetic substance B to form an ordered alloy.
摘要翻译：提供了一种新颖的结构，其中有序合金材料填充在结构的孔中。还提供了一种制造该结构的方法。该方法包括在多孔层的孔中形成合金的第一步骤，用于在多孔层上形成由第二材料构成的膜的第二步骤和用于热处理具有该膜的多孔层的第三步骤。此外，提供了一种制备含有低温热处理的细L10晶粒的结构的方法。该方法包括用于制造包含分散在非磁性材料中的磁性物质的结构的方法，包括：形成包含分散在非磁性材料中的磁性物质A的第一层，在第一层上形成含有磁性物质B的第二层，以及在第二层形成期间或之后加热第一层和第二层以连接磁性物质A和磁性物质B以形成有序的合金。

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