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21. 发明申请

US20080246103A1 MR device with surfactant layer within the free layer 审中-公开
标题翻译： MR装置在自由层内具有表面活性剂层
公开(公告)号：US20080246103A1
公开(公告)日：2008-10-09
申请号：US11784076
申请日：2007-04-05
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/325 , H01F10/3254 , H01F41/303 , H01L43/12
摘要： The dR/R ratios of TMR and GMR devices, having a FeCo/NiFe type of free layer, have been significantly increased by inserting a suitable surfactant layer within (as opposed to above or below) the free layer. Our preferred surfactant material has been oxygen but similar-acting materials could be substituted. The concept can be applied to GMR CPP, CIP, and CCP sensor designs.
摘要翻译：具有FeCo / NiFe类型的自由层的TMR和GMR器件的dR / R比已经通过在自由层（相对于上方或下方）插入合适的表面活性剂层而显着增加。我们优选的表面活性剂材料是氧气，但可以代替类似作用的材料。该概念可以应用于GMR CPP，CIP和CCP传感器设计。

22. 发明申请

US20080219042A1 Magnetic memory cell 有权
标题翻译：磁记忆体
公开(公告)号：US20080219042A1
公开(公告)日：2008-09-11
申请号：US11715097
申请日：2007-03-07
申请人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
发明人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
IPC分类号： G11C11/16
CPC分类号： G11C11/15
摘要： By inserting a spin polarizing layer (typically pure iron) within the free layer of a MTJ or GMR memory cell, dR/R can be improved without significantly affecting other free layer properties such as Hc. Additional performance improvements can be achieved by also inserting a surfactant layer (typically oxygen) within the free layer.
摘要翻译：通过在MTJ或GMR存储器单元的自由层内插入自旋偏振层（通常为纯铁），可以改善dR / R，而不显着影响其它自由层性质如Hc。还可以通过在自由层内插入表面活性剂层（通常为氧）来实现另外的性能改进。

23. 发明申请

US20070146928A1 Ultra thin seed layer for CPP or TMR structure 有权
标题翻译：用于CPP或TMR结构的超薄种子层
公开(公告)号：US20070146928A1
公开(公告)日：2007-06-28
申请号：US11317598
申请日：2005-12-23
申请人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
发明人： Kunliang Zhang , Hui-Chuan Wang , Tong Zhao , Yu-Hsia Chen , Min Li , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , B82Y25/00 , G01R33/093 , Y10T29/49021
摘要： Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.
摘要翻译：已经通过用Ta上的Ru的双层代替常规种子层（通常为Ta）来制造改进的磁性器件。虽然Ru和Ta层都是超薄的（5到20埃之间），但保留种子和AFM层之间良好的交换偏差（约为70埃的IrMn）。这种安排有助于最小的屏蔽间隔，并在CPP，CCP-CPP或TMR配置中提供出色的性能。

24. 发明授权

US08385027B2 TMR device with novel free layer structure 有权
标题翻译： TMR器件具有新颖的自由层结构
公开(公告)号：US08385027B2
公开(公告)日：2013-02-26
申请号：US13317485
申请日：2011-10-19
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： G11B5/33 , G11B5/127 , H01L29/82
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10−6, and RA=1.2 ohm-um2 when FL1 is CoFe/CoFeB/CoFe, FL2 is CoFe/NiFe/CoFe, and the insertion layer is CoTa or CoFeBTa.
摘要翻译：公开了具有FL1 /插入/ FL2配置的复合自由层，用于在TMR或GMR传感器中实现高dR / R，低RA和低λ。铁磁FL1和FL2层分别具有（+）λ和（ - ）λ值。 FL1可以是CoFe，CoFeB或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb或Nb的合金。 FL2可以是CoFe，NiFe或其与Ni，Ta，Mn，Ti，W，Zr，Hf，Tb，Nb或B的合金。薄插入层包括至少一种诸如Co，Fe和Ni 以及选自Ta，Ti，W，Zr，Hf，Nb，Mo，V，Cr或B中的至少一种非磁性元素。在具有MgO隧道势垒的TMR堆叠中，dR / R> 60％，λ 〜1×10-6，当FL1为CoFe / CoFeB / CoFe时，RA = 1.2ohm-um2，FL2为CoFe / NiFe / CoFe，插入层为CoTa或CoFeBTa。

25. 发明授权

US08335105B2 Magnetic memory cell 有权
标题翻译：磁记忆体
公开(公告)号：US08335105B2
公开(公告)日：2012-12-18
申请号：US11715097
申请日：2007-03-07
申请人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
发明人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
IPC分类号： G11C11/14
CPC分类号： G11C11/15
摘要： By inserting a spin polarizing layer (typically pure iron) within the free layer of a MTJ or GMR memory cell, dR/R can be improved without significantly affecting other free layer properties such as Hc. Additional performance improvements can be achieved by also inserting a surfactant layer (typically oxygen) within the free layer.
摘要翻译：通过在MTJ或GMR存储器单元的自由层内插入自旋偏振层（通常为纯铁），可以改善dR / R，而不显着影响其它自由层性质如Hc。还可以通过在自由层内插入表面活性剂层（通常为氧）来实现另外的性能改进。

26. 发明申请

US20120193738A1 TMR Device with Low Magnetorestriction Free Layer 有权
标题翻译：低磁阻自由层的TMR器件
公开(公告)号：US20120193738A1
公开(公告)日：2012-08-02
申请号：US13444497
申请日：2012-04-11
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/18 , G11B5/3906 , G11B5/3909 , G11B5/3912 , G11B2005/3996 , G11C11/161 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/12
摘要： A high performance TMR sensor is fabricated by employing a free layer with a trilayer configurations represented by FeCo/CoFeB/CoB, FeCo/CoB/CoFeB, FeCo/CoFe/CoB, or FeCo/FeB/CoB may also be employed. Alternatively, CoNiFeB or CoNiFeBM formed by co-sputtering CoB with CoNiFe or CoNiFeM, respectively, where M is V, Ti, Zr, Nb, Hf, Ta, or Mo may be included in a composite free layer or as a single free layer in the case of CoNiFeBM. A 15 to 30% in improvement in TMR ratio over a conventional CoFe/NiFe free layer is achieved while maintaining low Hc and RA
摘要翻译：通过采用由FeCo / CoFeB / CoB，FeCo / CoB / CoFeB，FeCo / CoFe / CoB或FeCo / FeB / CoB表示的三层结构的自由层制造高性能TMR传感器。或者，通过共溅射CoB与CoNiFe或CoNiFeM（其中M是V，Ti，Zr，Nb，Hf，Ta或Mo）分别形成的CoNiFeB或CoNiFeBM可以包括在复合自由层中或作为单个自由层 CoNiFeBM的情况。在保持低Hc和RA <3欧姆 - um2的同时，实现了常规CoFe / NiFe自由层的TMR比提高15至30％。在双层或三层实施例中，通过组合CoB（-λ）和一个或多个具有正λ的层来实现-5×10-6和5×10-6之间的磁致伸缩（λ）。

27. 发明申请

US20120128870A1 TMR DEVICE WITH IMPROVED MGO BARRIER 有权
标题翻译：具有改进的MGO障碍物的TMR装置
公开(公告)号：US20120128870A1
公开(公告)日：2012-05-24
申请号：US12927698
申请日：2010-11-22
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： H01F1/047
CPC分类号： H01F41/307 , B82Y40/00 , G11C11/161 , H01L43/12
摘要： A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.
摘要翻译：公开了一种形成高性能磁隧道结（MTJ）的方法，其中隧道势垒包括至少三个金属氧化物层。通过沉积第一金属层，执行自然氧化（NOX）工艺，沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化，并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。在替代实施例中，在最上层金属层被沉积之前，在MOX1层上形成多个金属氧化物层。所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA，并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

28. 发明授权

US08105703B2 Process for composite free layer in CPP GMR or TMR device 有权
标题翻译： CPP GMR或TMR装置中复合自由层的工艺
公开(公告)号：US08105703B2
公开(公告)日：2012-01-31
申请号：US12214503
申请日：2008-06-19
申请人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
发明人： Hui-Chuan Wang , Min Li , Tong Zhao , Kunliang Zhang , Chyu-Jiuh Torng
IPC分类号： G11B5/33 , G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , Y10T29/49044 , Y10T428/11 , Y10T428/1107 , Y10T428/1121 , Y10T428/1129
摘要： The conventional free layer in a CPP GMR or TMR read head has been replaced by a tri-layer laminate comprising Co rich CoFe, moderately Fe rich NiFe, and heavily Fe rich NiFe. The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness and acceptable magnetostriction. A process for manufacturing the device is described.
摘要翻译： CPP GMR或TMR读取头中的常规自由层已经被包含富钴CoFe，中等富Fe的NiFe和大量富Fe NiFe的三层层压体所代替。结果是具有比现有技术的装置更高的MR比的改进的装置，同时仍然保持自由层柔软性和可接受的磁致伸缩。描述了用于制造该装置的方法。

29. 发明申请

US20100073828A1 TMR device with novel free layer 有权
标题翻译： TMR器件具有新颖的自由层
公开(公告)号：US20100073828A1
公开(公告)日：2010-03-25
申请号：US12284454
申请日：2008-09-22
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/33 , G11B5/3929 , G11B2005/3996 , Y10T428/1114
摘要： A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe)n where n is ≧2 or (CoB/CoFe)m/CoB where m is ≧1. The free layer described herein affords a high TMR ratio above 60% while achieving low values for λ (
摘要翻译：公开了具有FL1 / FL2 / FL3结构的自由层的TMR传感器，其中FL1是FeCo或厚度在2和15埃之间的FeCo合金。 FL2层由厚度为2〜10埃的CoFeB或CoFeB合金制成。 FL3层的厚度为10〜100埃，并且具有负λ以从FL1和FL2层偏移正的λ，由CoB或CoBQ合金组成，其中Q是Ni，Mn，Tb，W，Hf，Zr ，Nb和Si。或者，FL3层可以是其中n为≥2的CoB / CoFe（CoB / CoFe）n或（CoB / CoFe）m / CoB（其中m为≥1）的复合物。此处描述的自由层提供高于60％的高TMR比，同时实现λ（<5×10-6），RA（1.5欧姆/μm2）和Hc（<6Oe）的低值。

30. 发明授权

US07672088B2 Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications 有权
标题翻译： Heusler合金与插入层，以降低CPP，TMR，MRAM和其他自旋电子应用的订购温度
公开(公告)号：US07672088B2
公开(公告)日：2010-03-02
申请号：US11472126
申请日：2006-06-21
申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
发明人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11C11/16 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/183 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer ≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.
摘要翻译：公开了一种自旋阀结构，其中AP1层和/或自由层由具有Al或FeCo插入层的层状Heusler合金制成。因此，Heusler合金（例如Co 2 MnSi）的排序温度从约350℃降低到280℃，这对于自旋电子器件应用是实用的。插入层的厚度为0.5〜5埃，也可以是Sn，Ge，Ga，Sb或Cr。 AP1层或自由层可以含有一个或两个另外的FeCo层，以得到由FeCo / [HA / IL] nHA，[HA / IL] nHA / FeCo或FeCo / [HA / IL] nHA / FeCo表示的构型，其中 n是整数≥1，HA是Heusler合金层，IL是插入层。任选地，通过在HA层中掺杂Al或FeCo，Heusler合金插入方案是可能的。例如，Co2MnSi可以与Al或FeCo靶或Co2MnAl或Co2FeSi靶共溅射。

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