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    • 23. 发明授权
    • RF power amplifier circuitry and method for amplifying signals
    • RF功率放大器电路和放大信号的方法
    • US06462620B1
    • 2002-10-08
    • US09660009
    • 2000-09-12
    • Timothy J. DupuisSusanne A. Paul
    • Timothy J. DupuisSusanne A. Paul
    • H03F318
    • H03F3/19H01L27/08H01L2224/16225H01L2924/15311
    • An RF power amplifier is provided for use with wireless transmission systems such as cellular phones. An RF power amplifier includes direct drive amplifier circuitry operating in a push-pull scheme. The RF power amplifier includes a pair of switching devices driven by a pair of mutually coupled inductive devices. The inductive devices may be magnetically or capacitively coupled together. The RF power amplifier may be formed on a single integrated circuit and include an on-chip bypass capacitor. The RF power amplifier may utilize a voltage regulator for providing a regulated voltage source. The RF power amplifier may be provided using a dual oxide gate device resulting in an improved amplifier. The RF power amplifier may be packaged using flip chip technology and multi-layer ceramic chip carrier technology.
    • RF功率放大器被提供用于诸如蜂窝电话之类的无线传输系统。 RF功率放大器包括以推挽方式工作的直接驱动放大器电路。 RF功率放大器包括由一对相互耦合的感应器件驱动的一对开关器件。 感应器件可以磁性或电容耦合在一起。 RF功率放大器可以形成在单个集成电路上并且包括片上旁路电容器。 RF功率放大器可以利用电压调节器来提供调节电压源。 可以使用双重氧化物栅极器件提供RF功率放大器,从而产生改进的放大器。 RF功率放大器可以使用倒装芯片技术和多层陶瓷芯片载体技术封装。
    • 25. 发明授权
    • Method and apparatus for regulating a voltage
    • 用于调节电压的方法和装置
    • US06362606B1
    • 2002-03-26
    • US09659876
    • 2000-09-12
    • Timothy J. DupuisSusanne A. Paul
    • Timothy J. DupuisSusanne A. Paul
    • G05F140
    • H03F3/193
    • An RF power amplifier is provided for use with wireless transmission systems such as cellular phones. An RF power amplifier includes direct drive amplifier circuitry operating in a push-pull scheme. The RF power amplifier includes a pair of switching devices driven by a pair of mutually coupled inductive devices. The inductive devices may be magnetically or capacitively coupled together. The RF power amplifier may be formed on a single integrated circuit and include an on-chip bypass capacitor. The RF power amplifier may utilize a voltage regulator for providing a regulated voltage source. The RF power amplifier may be provided using a dual oxide gate device resulting in an improved amplifier. The RF power amplifier may be packaged using flip chip technology and multi-layer ceramic chip carrier technology.
    • RF功率放大器被提供用于诸如蜂窝电话之类的无线传输系统。 RF功率放大器包括以推挽方式工作的直接驱动放大器电路。 RF功率放大器包括由一对相互耦合的感应器件驱动的一对开关器件。 感应器件可以磁性或电容耦合在一起。 RF功率放大器可以形成在单个集成电路上并且包括片上旁路电容器。 RF功率放大器可以利用电压调节器来提供调节电压源。 可以使用双重氧化物栅极器件提供RF功率放大器,从而产生改进的放大器。 RF功率放大器可以使用倒装芯片技术和多层陶瓷芯片载体技术封装。