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    • 28. 发明授权
    • Boundary acoustic wave device
    • 边界声波装置
    • US08344589B2
    • 2013-01-01
    • US13368361
    • 2012-02-08
    • Mari YaoiTetsuya Kimura
    • Mari YaoiTetsuya Kimura
    • H01L41/08
    • H01L41/047H03H9/0222H03H9/131H03H9/14541
    • Regarding a boundary acoustic wave device in which at least a part of an IDT electrode is embedded in a groove disposed in a piezoelectric substrate, the acoustic velocity is increased. A boundary acoustic wave device is provided with a piezoelectric substrate, a first dielectric layer, and an IDT electrode. The surface of the piezoelectric substrate is provided with a groove. The IDT electrode is disposed at the boundary between the piezoelectric substrate and the first dielectric layer in such a way that at least a part thereof is located in the groove. In the inside of the groove, the groove angle γ, which is the size of an angle formed by an upper end portion of the inside surface of the groove with the surface of the piezoelectric substrate, is less than 90 degrees.
    • 关于其中至少一部分IDT电极嵌入设置在压电基板中的槽中的声界面波装置,声速增加。 声界面波装置具有压电基板,第一电介质层和IDT电极。 压电基板的表面设置有凹槽。 IDT电极设置在压电基板和第一介电层之间的边界处,使得其至少一部分位于凹槽中。 在槽的内部,由沟槽内表面的上端部与压电基板的表面形成的角度的大小的槽角γ小于90度。