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21. 发明授权

US08441102B2 Semiconductor device having a capacitor 有权
标题翻译：具有电容器的半导体器件
公开(公告)号：US08441102B2
公开(公告)日：2013-05-14
申请号：US13234639
申请日：2011-09-16
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno , Yuugo Goto , Hideaki Kuwabara
IPC分类号： H01L29/00 , H01L23/48 , H01L29/40
CPC分类号： H01L21/6835 , H01L23/5385 , H01L23/5388 , H01L24/48 , H01L24/73 , H01L24/81 , H01L27/0688 , H01L27/12 , H01L29/66757 , H01L2221/68354 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2224/16145 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/81801 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/10253 , H01L2924/12034 , H01L2924/12042 , H01L2924/13063 , H01L2924/13064 , H01L2924/14 , H01L2924/1423 , H01L2924/15311 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/3011 , H03H3/08 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
摘要翻译：本发明的目的是提供一种在不使用半导体衬底的情况下集成各种元件的半导体器件及其制造方法。根据本发明，在与衬底分离的衬底上形成包括电感器，电容器，电阻元件，TFT元件，嵌入布线等的待分离层，并转移到电路板通过线112或焊料107与设置在电路板100中的布线图案114进行导电，从而形成高频模块等。

22. 发明授权

US08268702B2 IC card and booking-account system using the IC card 有权
标题翻译： IC卡和预订账号系统使用IC卡
公开(公告)号：US08268702B2
公开(公告)日：2012-09-18
申请号：US13415043
申请日：2012-03-08
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
IPC分类号： H01L21/30
CPC分类号： G06K19/077 , G06K19/07703 , G06Q20/105 , G06Q20/3415 , G07F7/1008 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10271 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2224/45147
摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
摘要翻译：本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

23. 发明授权

US07994506B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07994506B2
公开(公告)日：2011-08-09
申请号：US12635752
申请日：2009-12-11
申请人： Junya Maruyama , Toru Takayama , Yuugo Goto
发明人： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC分类号： H01L29/04
CPC分类号： H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
摘要翻译：具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是以及制造半导体器件的方法。在本发明中，元件不形成在塑料膜上。相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层）（第二接合部件（16））。以这种方式，本发明实现了薄膜的薄化和重量的减轻。

24. 发明授权

US07883989B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07883989B2
公开(公告)日：2011-02-08
申请号：US12578722
申请日：2009-10-14
申请人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
发明人： Yuugo Goto , Yumiko Fukumoto , Toru Takayama , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/46 , H01L21/30 , H01L21/78 , H01L21/301
CPC分类号： H01L27/1266 , G02F2001/13613 , H01L27/3246 , H01L51/524 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L2221/68368 , H01L2227/323 , H01L2227/326 , Y10S438/976 , Y10S438/977
摘要： It is an object of the invention to provide a peeling method which does not damage a peeling layer, and to perform peeling not only a peeling layer having a small-size area but also an entire peeling layer having a large-size area with a preferable yield. In the invention, after pasting a fixing substrate, a part of a glass substrate is removed by scribing or performing laser irradiation on the glass substrate which leads to providing a trigger. Then, peeling is performed with a preferable yield by performing peeling from the removed part. In addition, a crack is prevented by covering the entire face except for a connection portion of a terminal electrode (including a periphery region of the terminal electrode) with a resin.
摘要翻译：本发明的目的是提供一种不会损伤剥离层的剥离方法，并且不仅剥离具有小尺寸区域的剥离层，而且还可以剥离具有大尺寸区域的整个剥离层产量。在本发明中，在粘贴固定基板之后，通过在导致提供触发的玻璃基板上划线或进行激光照射来去除玻璃基板的一部分。然后，通过从去除部分剥离而以优选的收率进行剥离。此外，通过用树脂覆盖端子电极（包括端子电极的周边区域）的连接部分以外的整个面来防止裂纹。

25. 发明申请

US20100259548A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100259548A1
公开(公告)日：2010-10-14
申请号：US12823182
申请日：2010-06-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Yasuyuki Arai , Noriko Shibata
IPC分类号： G06F13/14 , G09G5/00 , H01L33/08
CPC分类号： H01L51/0024 , G02F1/13306 , G02F1/1339 , G02F1/1341 , G02F1/134309 , G02F1/13439 , G02F1/13452 , G02F1/13454 , G02F1/1368 , G02F2001/13456 , G02F2202/28 , H01L21/2007 , H01L21/67196 , H01L21/67207 , H01L21/67236 , H01L21/6835 , H01L21/76251 , H01L25/0657 , H01L25/50 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1266 , H01L27/1274 , H01L27/15 , H01L27/3248 , H01L27/3272 , H01L27/3276 , H01L29/78675 , H01L51/003 , H01L51/5012 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5092 , H01L51/5096 , H01L51/5206 , H01L51/5221 , H01L51/56 , H01L2221/68368 , H01L2224/05001 , H01L2224/05009 , H01L2224/05025 , H01L2224/13025 , H01L2224/16 , H01L2225/06524 , H01L2225/06548 , H01L2225/06555 , H01L2225/06586 , H01L2227/323 , H01L2227/326 , H01L2251/308 , H01L2251/5323 , H01L2924/00014 , H01L2924/01004 , H01L2924/01025 , H01L2924/01046 , H01L2924/01055 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12044 , H01L2924/3025 , H01L2924/00 , H01L2224/05599 , H01L2224/05099
摘要： The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.
摘要翻译：本发明旨在实现面板上系统的窄帧。除此之外，安装在面板上的系统旨在使功能更高更通用。在本发明中，在形成有像素部（包括液晶元件，发光元件）和驱动电路的面板上，层叠形成了构成外部电路的集成电路。具体地，在面板上的像素部分和驱动电路中，在与驱动电路重叠的位置上，根据转录技术层叠形成任何一种或多种集成电路。

26. 发明申请

US20100148179A1 Semiconductor Device and Method of Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100148179A1
公开(公告)日：2010-06-17
申请号：US12635752
申请日：2009-12-11
申请人： Junya Maruyama , Toru Takayama , Yuugo Goto
发明人： Junya Maruyama , Toru Takayama , Yuugo Goto
IPC分类号： H01L33/00
CPC分类号： H01L21/76275 , H01L21/308 , H01L21/76251 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/32 , H01L29/78603 , H01L51/0024 , H01L51/56
摘要： A semiconductor device having a semiconductor element (a thin film transistor, a thin film diode, a photoelectric conversion element of silicon PIN junction, or a silicon resistor element) which is light-weight, flexible (bendable), and thin as a whole is provided as well as a method of manufacturing the semiconductor device. In the present invention, the element is not formed on a plastic film. Instead, a flat board such as a substrate is used as a form, the space between the substrate (third substrate (17)) and a layer including the element (peeled layer (13)) is filled with coagulant (typically an adhesive) that serves as a second bonding member (16), and the substrate used as a form (third substrate (17)) is peeled off after the adhesive is coagulated to hold the layer including the element (peeled layer (13)) by the coagulated adhesive (second bonding member (16)) alone. In this way, the present invention achieves thinning of the film and reduction in weight.
摘要翻译：具有重量轻，柔性（弯曲）和整体薄的半导体元件（薄膜晶体管，薄膜二极管，硅PIN结的光电转换元件或硅电阻元件）的半导体器件是以及制造半导体器件的方法。在本发明中，元件不形成在塑料膜上。相反，使用诸如基板的平板作为形式，衬底（第三衬底（17））和包括元件（剥离层（13））的层之间的空间填充有凝结剂（通常为粘合剂），凝固剂用作第二接合构件（16），并且在粘合剂凝固之后剥离用作形式的基板（第三基板（17）），以通过凝固的粘合剂保持包括元件（剥离层（13））的层）（第二接合部件（16））。以这种方式，本发明实现了薄膜的薄化和重量的减轻。

27. 发明授权

US07652359B2 Article having display device 有权
标题翻译：文章有显示设备
公开(公告)号：US07652359B2
公开(公告)日：2010-01-26
申请号：US10733260
申请日：2003-12-12
申请人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
发明人： Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno , Mai Akiba
IPC分类号： H01L23/498
CPC分类号： G06K19/077 , G06K19/07703 , G06Q20/105 , G06Q20/3415 , G07F7/1008 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/01015 , H01L2924/01047 , H01L2924/10253 , H01L2924/10271 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/01005 , H01L2224/45147
摘要： It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm.
摘要翻译：本发明的目的是提供一种高度复杂的功能IC卡，其可以通过防止诸如改变脸部图像的伪造，以及显示其他图像以及脸部照片来确保安全性。一种IC卡，包括显示装置和多个薄膜集成电路; 其中所述显示装置的驱动由所述多个薄膜集成电路控制; 通过使用多晶半导体膜形成用于多个薄膜集成电路的半导体元件和显示装置; 层叠多个薄膜集成电路; 显示装置和多个薄膜集成电路被配备用于相同的印刷线路板; IC卡的厚度为0.05mm〜1mm。

28. 发明授权

US07595256B2 Semiconductor device, method of manufacturing thereof, and method of manufacturing base material 有权
标题翻译：半导体装置及其制造方法以及基材的制造方法
公开(公告)号：US07595256B2
公开(公告)日：2009-09-29
申请号：US11798094
申请日：2007-05-10
申请人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
发明人： Toru Takayama , Yuugo Goto , Yumiko Fukumoto , Junya Maruyama , Takuya Tsurume
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L33/0079
摘要： It is an object of the invention to provide a lightweight semiconductor device having a highly reliable sealing structure which can prevent ingress of impurities such as moisture that deteriorate element characteristics, and a method of manufacturing thereof. A protective film having superior gas barrier properties (which is a protective film that is likely to damage an element if the protective film is formed on the element directly) is previously formed on a heat-resistant substrate other than a substrate with the element formed thereon. The protective film is peeled off from the heat-resistant substrate, and transferred over the substrate with the element formed thereon so as to seal the element.
摘要翻译：本发明的目的是提供一种具有高度可靠的密封结构的轻质半导体器件及其制造方法，该密封结构能够防止元素特性恶化的诸如水分等杂质的侵入。具有优异阻气性的保护膜（其是如果在元件上直接形成保护膜时可能损坏元件的保护膜）预先在其上形成有元件的基板之外的耐热基板上形成。保护膜从耐热基材上剥离，并在其上形成的元件在基板上转印以密封元件。

29. 发明申请

US20080088034A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080088034A1
公开(公告)日：2008-04-17
申请号：US11947835
申请日：2007-11-30
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L23/50
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译：本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。在本发明中，通过转印技术制造集成电路膜。

30. 发明授权

US07344925B2 Semiconductor device, method of manufacturing the same, and method of designing the same 有权
标题翻译：半导体装置及其制造方法及其设计方法
公开(公告)号：US07344925B2
公开(公告)日：2008-03-18
申请号：US11064820
申请日：2005-02-25
申请人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Kiyoshi Kato , Toshihiko Saito , Atsuo Isobe , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/331
CPC分类号： H01L29/78696 , H01L27/12 , H01L27/1281 , H01L29/66757 , H01L29/78675 , H01L2221/68368
摘要： An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device. The present invention relates to a semiconductor device with a plurality of cells each having a plurality of TFTs that have the same channel length direction, in which the plural cells form a plurality of columns along the channel length direction, in which an island-like semiconductor film of each of the plural TFTs is crystallized by laser light running in the channel length direction, in which a channel formation region of the island-like semiconductor film is placed on a depressive portion of a base film that has a rectangular or stripe pattern concave and convex with the channel length direction matching the longitudinal direction of the depressive portion, and in which a plurality of wires for electrically connecting the plural cells with one another are formed between the plural columns.
摘要翻译：本发明的目的是提供一种通过激光晶化形成的半导体器件及其制造方法，可以避免TFT沟道形成区域中的晶界的形成。本发明的另一个目的是提供一种指定半导体器件的方法。本发明涉及具有多个单元的半导体器件，每个单元具有多个具有相同沟道长度方向的TFT，其中多个单元沿着沟道长度方向形成多个列，其中岛状半导体通过在沟道长度方向上行进的激光，使多个TFT中的每一个的膜结晶，其中岛状半导体膜的沟道形成区域被放置在基膜的具有矩形或条纹图案凹部的凹部并且其中通道长度方向与凹陷部分的纵向相匹配的凸起，并且其中在多个柱之间形成有用于彼此电连接多个单元的多根导线。

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