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21. 发明申请

US20060227831A1 Semiconductor laser apparatus 失效
标题翻译：半导体激光装置
公开(公告)号：US20060227831A1
公开(公告)日：2006-10-12
申请号：US11397727
申请日：2006-04-05
申请人： Takehiro Nishida , Tsutomu Yamaguchi , Motoharu Miyashita
发明人： Takehiro Nishida , Tsutomu Yamaguchi , Motoharu Miyashita
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , G11B7/1275 , G11B2007/0006 , H01S5/2231 , H01S5/4081 , H01S5/4087 , H01S2301/14
摘要： A semiconductor laser apparatus includes multiple light emitting points, and a simple ridge stripe structure for each of the light emitting points. At least one of the light emitting points is disposed at a location that is 0% to 15% of the width of a substrate of the apparatus from the center, in the width direction, of the substrate.
摘要翻译：半导体激光装置包括多个发光点，以及用于每个发光点的简单脊条结构。至少一个发光点设置在基板的宽度方向上的中心的设备宽度的0％至15％的位置。

22. 发明申请

US20060098704A1 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US20060098704A1
公开(公告)日：2006-05-11
申请号：US11269627
申请日：2005-11-09
申请人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
发明人： Tsutomu Yamaguchi , Takehiro Nishida , Harumi Nishiguchi , Hitoshi Tada , Yasuaki Yoshida
IPC分类号： H01S5/00
CPC分类号： H01S5/22
摘要： A semiconductor laser is provided which emits laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable. The width of trenches is determined so that the magnitude (E1) of the electric field at the center of a ridge and the magnitude (E2) of the electric field at the edges of the trenches provide. a ratio E1/E2 that is larger than 0.0001 and smaller than 0.01. In a semiconductor laser with a double-channel ridge structure, layers having a larger equivalent refractive index than the trenches exist outside the trenches. Accordingly, the semiconductor absorbs the light distributed outside the trenches and it is possible to obtain laser light in which the intensity center of the far-field pattern in the horizontal direction does not vary with variation of the optical output and in which the shape of the far-field pattern in the horizontal direction is stable.
摘要翻译：提供一种半导体激光器，其发射激光，其中远场图案的水平方向的强度中心不随光输出的变化而变化，并且其中水平方向上的远场图案的形状是稳定的。确定沟槽的宽度，使得脊的中心处的电场的大小（E1）和沟槽边缘处的电场的大小（E2）提供。大于0.0001且小于0.01的比E1 / E2。在具有双沟道脊结构的半导体激光器中，具有比沟槽更大的等效折射率的层存在于沟槽外部。因此，半导体吸收分布在沟槽外侧的光，能够获得激光，其中远场图案的强度中心在水平方向上不随光输出的变化而变化，并且其形状水平方向的远场模式是稳定的。

23. 发明授权

US06975604B1 Base station controller and mobile station 失效
标题翻译：基站控制器和移动台
公开(公告)号：US06975604B1
公开(公告)日：2005-12-13
申请号：US09620348
申请日：2000-07-20
申请人： Kazuhito Ishida , Shiro Mazawa , Seiko Shimogawa , Toshiaki Kurokawa , Tsutomu Yamaguchi
发明人： Kazuhito Ishida , Shiro Mazawa , Seiko Shimogawa , Toshiaki Kurokawa , Tsutomu Yamaguchi
IPC分类号： H04L1/00 , H04B7/26 , H04J13/00 , H04L1/20 , H04W28/18 , H04W52/24 , H04W52/26 , H04W72/04 , H04W76/02 , H04Q7/00
CPC分类号： H04L1/0045 , H04L1/0002 , H04L1/0006 , H04L1/0071 , H04L1/20 , H04W52/241 , H04W52/267
摘要： A base station controller and a mobile station to achieve high speed transmission and effective use of radio resources in a radio communications system. A communication system includes a plurality of base stations in order to provide communication among a mobile station, another mobile station and a communication link. The communication links for use in the communication are selected base on the channel quality of the communications links. The communication information is then demultiplexed for each selected link, and the data is sent parallel by way of the demultiplexed communication information along the selected communication links to allow high speed transmission.
摘要翻译：基站控制器和移动台，用于实现无线电通信系统中的高速传输和无线电资源的有效利用。通信系统包括多个基站，以便在移动站，另一移动站和通信链路之间提供通信。在通信中使用的通信链路是基于通信链路的信道质量来选择的。然后对于每个所选择的链路对通信信息进行解复用，并且通过沿着所选择的通信链路的解复用的通信信息并行发送数据，以允许高速传输。

24. 发明申请

US20050221590A1 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US20050221590A1
公开(公告)日：2005-10-06
申请号：US11080398
申请日：2005-03-16
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00 , H01L21/20 , H01L21/205 , H01L21/3065 , H01L21/76 , H01L33/32 , H01S5/00 , H01S5/223 , H01S5/343
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
摘要翻译：提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

25. 发明申请

US20050191775A1 Nitride-based semiconductor device and method of fabricating the same 有权
公开(公告)号：US20050191775A1
公开(公告)日：2005-09-01
申请号：US11114193
申请日：2005-04-26
申请人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
发明人： Tadao Toda , Tsutomu Yamaguchi , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/285 , H01L33/00 , H01L33/32 , H01L33/40 , H01S5/343 , H01L21/00
CPC分类号： H01S5/32341 , B82Y20/00 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L33/007 , H01L33/0079 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/2201 , H01S5/305 , H01S5/34333 , H01S2304/04
摘要： A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

26. 发明申请

US20050069005A1 Monolithic semiconductor laser and method of manufacturing the same 审中-公开
标题翻译：单片半导体激光器及其制造方法
公开(公告)号：US20050069005A1
公开(公告)日：2005-03-31
申请号：US10898196
申请日：2004-07-26
申请人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
发明人： Takehiro Nishida , Motoharu Miyashita , Tsutomu Yamaguchi
IPC分类号： H01S5/22 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/343 , H01S5/40 , H01S5/00
CPC分类号： B82Y20/00 , H01S5/2063 , H01S5/2086 , H01S5/209 , H01S5/2231 , H01S5/34326 , H01S5/34353 , H01S5/4031 , H01S5/4087
摘要： A monolithic semiconductor laser having plural semiconductor lasers having different emission wavelengths from each other, including: a semiconductor substrate; a first double hetero-structure formed within a first area on the semiconductor substrate and having first clad layers disposed above and below a first active layer; and a second double hetero-structure formed within a second area on the semiconductor substrate and having second clad layers disposed above and below a second active layer. The first and second active layers are made of different semiconductor materials from each other. The first clad layers above and below the first active layer are of approximately the same semiconductor materials and the second clad layers above and below the second active layer are of approximately the same semiconductor materials.
摘要翻译：一种单片半导体激光器，具有：具有彼此不同的发光波长的多个半导体激光器，包括：半导体基板; 第一双异质结构形成在半导体衬底上的第一区域内，并且具有设置在第一有源层上方和下方的第一覆层; 以及形成在所述半导体衬底上的第二区域内并且具有设置在第二有源层上方和下方的第二覆层的第二双异质结构。第一和第二有源层由彼此不同的半导体材料制成。第一有源层之上和之下的第一覆盖层具有大致相同的半导体材料，并且第二有源层上方和下方的第二覆盖层具有大致相同的半导体材料。

27. 发明授权

US06649942B2 Nitride-based semiconductor light-emitting device 有权
公开(公告)号：US06649942B2
公开(公告)日：2003-11-18
申请号：US10150930
申请日：2002-05-21
申请人： Masayuki Hata , Yasuhiko Nomura , Kunio Takeuchi , Tsutomu Yamaguchi , Takashi Kano
发明人： Masayuki Hata , Yasuhiko Nomura , Kunio Takeuchi , Tsutomu Yamaguchi , Takashi Kano
IPC分类号： H01L3300
CPC分类号： H01L33/32 , H01L33/007 , H01L33/06 , H01L33/14 , H01L33/38
摘要： A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconductor layer formed on a substrate, an emission layer, consisting of a nitride-based semiconductor, formed on the first nitride-based semiconductor layer, a second conductivity type second nitride-based semiconductor layer formed on the emission layer, a second conductivity type intermediate layer, consisting of a nitride-based semiconductor, formed on the second nitride-based semiconductor layer, a second conductivity type contact layer, including a nitride-based semiconductor layer having a smaller band gap than gallium nitride, formed on the intermediate layer, and a light-transmitting electrode formed on the contact layer. Thus, a carrier concentration and electric conductivity higher than those of a contact layer (nitride-based semiconductor layer) consisting of gallium nitride is obtained.

28. 发明授权

US6037397A Rubber molded product 失效
标题翻译：橡胶成型品
公开(公告)号：US6037397A
公开(公告)日：2000-03-14
申请号：US104387
申请日：1998-06-25
申请人： Mikitoshi Satoh , Tsutomu Yamaguchi , Hiroaki Sawa , Kazuyoshi Ikeda , Masato Nishikawa
发明人： Mikitoshi Satoh , Tsutomu Yamaguchi , Hiroaki Sawa , Kazuyoshi Ikeda , Masato Nishikawa
IPC分类号： B29C47/04 , B29C47/06 , B29C47/12 , B29K21/00 , B29K105/16 , C08K3/00 , C08L83/05 , C08J5/18 , C08K3/38 , B29C47/88
CPC分类号： B29C47/065 , B29C47/0047 , C08K3/0008 , B29C47/0021
摘要： A rubber molded product containing an inorganic filler, in which the relation of an inorganic filler content and a thermal resistance is within the range enclosed by lines connecting points A (20,1.5), B (20,0.1) and C (50,0.1) in the X-Y coordinates wherein the X coordinate expresses the inorganic filler content (vol %) and the Y coordinate expresses the thermal resistance per 1 mm thickness (.degree. C./W).
摘要翻译：含有无机填料的橡胶成型体，其中无机填料含量和热阻的关系在连接点A（20,1.5），B（20,0.1）和C（50,0.1）的线所包围的范围内），其中X坐标表示无机填料含量（vol％），Y坐标表示每1mm厚度的热电阻（DEGC / W）。

29. 发明授权

US5571983A Abutment device for a key switch arrangement operable with both hammer-equipped and hammerless keyboards for electronic musical instruments 失效
标题翻译：用于键盘开关装置的基台装置，可与用于电子乐器的锤装备和无锤键盘一起操作
公开(公告)号：US5571983A
公开(公告)日：1996-11-05
申请号：US152706
申请日：1993-11-16
申请人： Tsutomu Yamaguchi , Kazuhiro Tsukamoto
发明人： Tsutomu Yamaguchi , Kazuhiro Tsukamoto
IPC分类号： G10B3/12 , G10C3/12 , G10F1/02 , G10H1/34 , G10H3/00
CPC分类号： G10H1/346 , Y10S84/07
摘要： A keyboard device for an electronic musical instrument comprises a keyboard chassis, keys rotatively arranged on the keyboard chassis, and a key switch arranged beneath each of the keys for detecting a key status of each key. Each key has a switch-depressing projection arranged just above the key switch, and a hammer-depressing projection for depressing a hammer when the hammer is provided, with the switch-depressing projection and the hammer-depressing projection being formed adjacent to each other in one piece.
摘要翻译：一种用于电子乐器的键盘装置包括键盘机箱，旋转地布置在键盘机箱上的按键和设置在每个键下方的键开关，用于检测每个键的键状态。每个键具有刚好在钥匙开关上方布置的开关按压突起，以及用于在设置锤时按下锤子的捶击式突起，其中开关按压突起和槌击压突起彼此相邻地形成一块。

30. 发明申请

US20110211609A1 INTEGRATED SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：集成半导体激光器件及其制造方法
公开(公告)号：US20110211609A1
公开(公告)日：2011-09-01
申请号：US13100720
申请日：2011-05-04
申请人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki IZU , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/00 , H01L33/62
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译：提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

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