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21. 发明授权

US06984020B2 Ink jet printing apparatus and an ink cartridge 失效
公开(公告)号：US06984020B2
公开(公告)日：2006-01-10
申请号：US10303061
申请日：2002-11-25
申请人： Satoshi Shinada , Koichi Toba
发明人： Satoshi Shinada , Koichi Toba
IPC分类号： B41J2/14 , B41J29/393 , B41J2/175
CPC分类号： B41J2/17546
摘要： An ink jet printing apparatus which prints in various colors of ink, including: a ink cartridge mounting section which is selectively and detachably equipped with a plurality of separate ink cartridges or an integrated ink cartridge, wherein each of the plurality of separate ink cartridges comprises an ink chamber for storing ink of a color separately and an information storing member for storing information on the ink stored, and the integrated ink cartridge comprises a plurality of ink chambers for respectively storing ink of respective colors and an information storing member for storing information on all of the ink of respective colors; and an information acquiring section for acquiring the information on all of the ink of respective colors from the information storing member formed in the integrated ink cartridge.

22. 发明授权

US06986569B2 Ink cartridge and its manufacturing method 失效
公开(公告)号：US06986569B2
公开(公告)日：2006-01-17
申请号：US10929581
申请日：2004-08-31
申请人： Koichi Toba , Satoshi Shinada
发明人： Koichi Toba , Satoshi Shinada
IPC分类号： B41J2/175
CPC分类号： B41J2/17553 , B41J2/17503 , B41J2/17513 , B41J2/17559
摘要： An ink cartridge which supplies ink to an ink jet recording apparatus through an ink supply needle of the ink jet recording apparatus, has a container body having a shape of an approximately rectangular parallelepiped including an ink supply surface on which an ink supply passage into which the ink supply needle is inserted is provided, in which the height of a side surface approximately orthogonal to the ink supply surface is larger than at least one width of the ink supply surface, and one of the side surfaces is an opening surface opened in the direction of the width; a lid member, which has the approximately same shape as the opening surface and seals the opening surface of the container body; and a porous member, which has the approximately same shape as the container body and is housed in a space formed by the container body and lid member.

23. 发明授权

US06938997B2 Ink cartridge and vacuum-packaging product containing the same 有权
标题翻译：墨盒和含有相同的真空包装产品
公开(公告)号：US06938997B2
公开(公告)日：2005-09-06
申请号：US10615136
申请日：2003-07-08
申请人： Koichi Toba , Satoshi Shinada , Hisashi Miyazawa
发明人： Koichi Toba , Satoshi Shinada , Hisashi Miyazawa
IPC分类号： B41J2/175
CPC分类号： B41J2/17513
摘要： An ink cartridge includes: an ink accommodating portion for holding ink; an air passage for making the ink accommodating portion communicate with the atmosphere; and a valve mechanism, provided in the air passage, including an air-releasing valve member for sealing a communication hole provided in a partition wall for separating an ink-accommodating-portion side that is a side close to the ink accommodating portion from an atmosphere side that is a side close to the atmosphere, in a direction from the ink-accommodating-portion side to the atmosphere side, wherein the air-releasing valve member has a contact portion for opening the air passage by receiving an external force from the atmosphere side to the ink-accommodating-portion side.
摘要翻译：墨盒包括：用于保持墨水的墨水容纳部分; 用于使墨水容纳部分与大气连通的空气通道; 以及设置在空气通道中的阀机构，包括用于密封设置在分隔壁中的连通孔的空气释放阀构件，用于将与墨水容纳部分相邻的墨水容纳部分侧从大气分离在从墨水容纳部侧到大气侧的方向上是靠近大气的一侧，其中，所述排气阀构件具有用于通过接收来自大气的外力来打开空气通道的接触部一侧到墨水容纳部分侧。

24. 发明授权

US09159843B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09159843B2
公开(公告)日：2015-10-13
申请号：US13476356
申请日：2012-05-21
申请人： Kentaro Saito , Kazumasa Yanagisawa , Yasushi Ishii , Koichi Toba
发明人： Kentaro Saito , Kazumasa Yanagisawa , Yasushi Ishii , Koichi Toba
IPC分类号： H01L29/778 , H01L21/336 , H01L29/792 , H01L21/28 , H01L27/115 , H01L29/423 , H01L29/66 , G11C16/04
CPC分类号： H01L29/792 , G11C16/0466 , H01L21/28282 , H01L27/11573 , H01L29/4234 , H01L29/66833
摘要： To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 6a and a silicon film 6b over the metal film 6a. In an upper end part of the metal film 6a, a metal oxide portion 17 is formed by oxidation of a part of the metal film 6a. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 4a and the silicon film 4b over the metal film 4a.
摘要翻译：提高半导体器件的电气性能和可靠性。分闸式非易失性存储器的存储栅极是由金属膜6a上的金属膜6a和硅膜6b的叠层膜形成的金属栅电极。在金属膜6a的上端部分，通过氧化金属膜6a的一部分而形成金属氧化物部分17。分闸式非易失性存储器的控制栅电极是由金属膜4a的叠层膜和金属膜4a上的硅膜4b形成的金属栅电极。

25. 发明授权

US08530958B2 Semiconductor device having split gate type, non-volatile memory cells and a method of manufacturing the same 有权
标题翻译：具有分裂门型，非易失性存储单元的半导体器件及其制造方法
公开(公告)号：US08530958B2
公开(公告)日：2013-09-10
申请号：US12718002
申请日：2010-03-05
申请人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
发明人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
IPC分类号： H01L29/792
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11526 , H01L27/11531 , H01L29/66825 , H01L29/66833 , H01L29/7885
摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
摘要翻译：公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。在存储单元中用于源极的n +型半导体区域的上表面上形成硅化物层，其存储栅极电极MG侧的端部由第二侧壁限定。

26. 发明授权

US08258561B2 Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08258561B2
公开(公告)日：2012-09-04
申请号：US13307424
申请日：2011-11-30
申请人： Yoshiyuki Kawashima , Koichi Toba , Yasushi Ishii , Toshikazu Matsui , Takashi Hashimoto
发明人： Yoshiyuki Kawashima , Koichi Toba , Yasushi Ishii , Toshikazu Matsui , Takashi Hashimoto
IPC分类号： H01L27/08
CPC分类号： H01L28/60 , H01L27/0629 , H01L27/0805 , H01L27/105 , H01L27/10805 , H01L27/11526 , H01L27/11531 , H01L27/11573 , H01L28/40
摘要： In connection with a semiconductor device including a capacitor element there is provided a technique capable of improving the reliability of the capacitor element. A capacitor element is formed in an element isolation region formed over a semiconductor substrate. The capacitor element includes a lower electrode and an upper electrode formed over the lower electrode through a capacitor insulating film. Basically, the lower electrode and the upper electrode are formed from polysilicon films and a cobalt silicide film formed over the surfaces of the polysilicon films. End portions of the cobalt silicide film formed over the upper electrode are spaced apart a distance from end portions of the upper electrode. Besides, end portions of the cobalt silicide film formed over the lower electrode are spaced apart a distance from boundaries between the upper electrode and the lower electrode.
摘要翻译：关于包括电容器元件的半导体器件，提供了一种能够提高电容器元件的可靠性的技术。电容器元件形成在半导体衬底上形成的元件隔离区域中。电容器元件包括通过电容器绝缘膜形成在下电极上的下电极和上电极。基本上，下电极和上电极由形成在多晶硅膜的表面上的多晶硅膜和硅化钴膜形成。形成在上电极上的钴硅化物膜的端部与上电极的端部间隔开一定距离。此外，形成在下电极上的钴硅化物膜的端部与上电极和下电极之间的边界间隔一定距离。

27. 发明申请

US20100265303A1 METHOD OF LIQUID FILLING OF CARTRIDGE, LIQUID FILLING DEVICE, AND CARTRIDGE 审中-公开
标题翻译：液体填充方法，液体填充装置和盒装
公开(公告)号：US20100265303A1
公开(公告)日：2010-10-21
申请号：US12637395
申请日：2009-12-14
申请人： Yutaka Uehara , Mario Sato , Hiroshi Yamazaki , Koichi Toba
发明人： Yutaka Uehara , Mario Sato , Hiroshi Yamazaki , Koichi Toba
IPC分类号： B41J2/175
CPC分类号： B41J2/17553 , B41J2/17503 , B41J2/17506 , B41J2/17513
摘要： A method of refilling liquid into a cartridge according to the present invention is a method of liquid refilling, through which liquid is refilled into a used cartridge (1) in a liquid jet apparatus, comprising: a film removing process, in which an injection hole film (90) adhered around an air discharge opening (21), which communicates with the interior of the used cartridge (1), to seal the air discharge opening (21) is removed in order to make the air discharge opening (21) open; a liquid injecting process, in which liquid is injected into the used cartridge (1) through the air discharge opening (21) that has been made open in the injection hole film piercing process; and an injection hole film rewelding process, in which the film is rewelded using a surface other than an originally welded surface as a rewelded surface in order to seal again the air discharge opening (21), through which the liquid is injected in the liquid injecting process.
摘要翻译：根据本发明的将液体重新注入到盒中的方法是一种液体再填充的方法，液体通过液体再填充到液体喷射装置中的用过的盒（1）中，包括：膜去除工艺，其中注入孔粘附在与用过的盒（1）的内部连通的空气排放口（21）上以密封空气排放口（21）的薄膜（90）被移除，以使排气口（21）打开 ; 液体喷射过程，其中液体通过在注射孔膜穿孔过程中已经打开的排气口（21）注入到用过的盒（1）中; 以及注射孔膜再焊接工序，其中使用除原始焊接表面以外的表面再次焊接膜作为再焊接表面，以便再次密封空气排出口（21），液体注入液体注入液体处理。

28. 发明申请

US20080265286A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20080265286A1
公开(公告)日：2008-10-30
申请号：US12109340
申请日：2008-04-24
申请人： Tetsuya ISHIMARU , Yasuhiro Shimamoto , Toshiyuki Mine , Yasunobu Aoki , Koichi Toba , Kan Yasui
发明人： Tetsuya ISHIMARU , Yasuhiro Shimamoto , Toshiyuki Mine , Yasunobu Aoki , Koichi Toba , Kan Yasui
IPC分类号： H01L29/76
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/42344 , H01L29/513 , H01L29/66833
摘要： A memory cell includes an ONO film composed of a stacked film of a silicon nitride film SIN which is a charge trapping portion and oxide films BOTOX and TOPOX positioned under and over the silicon nitride film, a memory gate electrode MG over the ONO film, a source region MS, and a drain region MD, and program or erase is performed by hot carrier injection in the memory cell. In the memory cell, a total concentration of N—H bonds and Si—H bonds contained in the silicon nitride film SIN is made to be 5×1020 cm−3 or less.
摘要翻译：存储单元包括由作为电荷捕获部分的氮化硅膜SIN和位于氮化硅膜下面的氧化物膜BOTOX和TOPOX的叠层膜，ONO膜上的存储栅电极MG，源区MS和漏区MD，并且通过在存储单元中的热载流子注入来执行编程或擦除。在存储单元中，氮化硅膜Sin中包含的N-H键和Si-H键的总浓度为5×10 20 -3 -3以下。

29. 发明申请

US20070228446A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070228446A1
公开(公告)日：2007-10-04
申请号：US11717053
申请日：2007-03-13
申请人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
发明人： Koichi Toba , Yasushi Ishii , Yoshiyuki Kawashima , Satoru Machida , Munekatsu Nakagawa , Kentaro Saito , Toshikazu Matsui , Takashi Hashimoto , Kosuke Okuyama
IPC分类号： H01L29/76
CPC分类号： H01L29/42324 , H01L21/28273 , H01L21/28282 , H01L27/115 , H01L27/11526 , H01L27/11531 , H01L29/66825 , H01L29/66833 , H01L29/7885
摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.
摘要翻译：公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。在存储单元中用于源极的n + + / - 型半导体区域的上表面上形成硅化物层，其存储栅电极MG侧的端部由第二侧壁限定。

30. 发明授权

US07145194B2 Semiconductor integrated circuit device and a method of manufacturing the same 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US07145194B2
公开(公告)日：2006-12-05
申请号：US10781861
申请日：2004-02-20
申请人： Akio Nishida , Hiraku Chakihara , Koichi Toba
发明人： Akio Nishida , Hiraku Chakihara , Koichi Toba
IPC分类号： H01L27/108
CPC分类号： G11C11/4125 , H01L27/105 , H01L27/11 , H01L27/1104 , H01L27/1116
摘要： In order to improve the soft error resistance of a memory cell of an SRAM without increasing its chip size, in deep through-holes formed by perforating a silicon oxide film, there is a silicon nitride film and a silicon oxide film, a capacitor element having a TiN film serving as a lower electrode, a silicon nitride film serving as an insulator and a TiN film as an upper electrode. This capacitor element is connected between a storage node and a supply voltage line, between a storage node and a reference voltage line, or between storage nodes of the memory cell of the SRAM.
摘要翻译：为了提高SRAM的存储单元的软错误电阻而不增加其芯片尺寸，在通过穿透氧化硅膜形成的深通孔中，存在氮化硅膜和氧化硅膜，电容器元件具有用作下电极的TiN膜，用作绝缘体的氮化硅膜和作为上电极的TiN膜。该电容器元件连接在存储节点和电源电压线之间，存储节点和参考电压线之间，或SRAM的存储单元的存储节点之间。

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