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    • 29. 发明申请
    • Lower seal
    • 下封
    • US20110126475A1
    • 2011-06-02
    • US12924340
    • 2010-09-24
    • Takashi FukushimaKoso Deguchi
    • Takashi FukushimaKoso Deguchi
    • E06B7/22
    • B60J10/80B60J10/36
    • In a lower seal composed of a mounting part 5 to be mounted to a door panel 3 by a clip 4, a main lip 6 that is provided in a protruding state by bending from the upper end of the mounting part toward the inside of a vehicle and a sub-lip 22 that is integrally formed in the lower end of the mounting part, and that covers a drainage hole 12 by elastically making contact with a paint sealer 11 mounted to a hem 9; a folding part 23 with a V-shaped cross section is formed in the sub-lip 22 so as not to damage the lower seal, because the folding part 23 makes contact with the margin of the insertion groove 17 and is folded and the lower end of the sub-lip 22 is drawn from the hem 9 and tucked by the pedestal 16 when the door panel 3 after mounting of the lower seal is carried to a cradle for the next process.
    • 在由通过夹子4安装到门板3的安装部分5构成的下密封件中,通过从安装部件的上端朝向车辆内侧弯曲而设置成突出状态的主唇缘6 一体地形成在安装部的下端,并且通过弹性地与安装在下摆9上的涂料密封件11接触而覆盖排水孔12的副唇缘22; 因为折叠部23与插入槽17的边缘接触并被折叠,所以在副唇部22中形成具有V形横截面的折叠部23,以便不损坏下部密封,并且下端 当安装下部密封件的门板3被携带到用于下一个处理的支架时,子唇缘22从下摆9被拉出并被基座16折叠。
    • 30. 发明申请
    • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    • 半导体器件及其制造方法
    • US20100084685A1
    • 2010-04-08
    • US12563334
    • 2009-09-21
    • Hiroshi ITOKAWATakashi Fukushima
    • Hiroshi ITOKAWATakashi Fukushima
    • H01L29/786H01L21/336
    • H01L29/1054H01L29/665H01L29/6656H01L29/66636
    • A semiconductor device includes an SiGe film formed on part of a semiconductor substrate and including a channel region and at least part of source/drain extension regions between which the channel region is positioned, source/drain contact regions formed in a surface area of the semiconductor substrate and brought into contact with the pair of source/drain extension regions, a gate structure having a gate insulation film formed on the SiGe film and a gate electrode formed on the gate insulation film, first sidewall films formed on the SiGe film along side surfaces of the gate structure, second sidewall films formed on the SiGe film along the first sidewall films, third sidewall films formed on the source/drain contact regions along side surfaces of the SiGe film and the second sidewall films, and first silicide films formed on the source/drain contact regions.
    • 半导体器件包括形成在半导体衬底的一部分上的SiGe膜,其包括沟道区域和沟道区域位于其之间的源极/漏极延伸区域的至少一部分,在半导体衬底的表面区域中形成的源极/漏极接触区域 衬底并与一对源极/漏极延伸区域接触,具有形成在SiGe膜上的栅极绝缘膜的栅极结构和形成在栅极绝缘膜上的栅电极,沿着SiGe膜沿着侧表面形成的第一侧壁膜 栅极结构的第二侧壁膜沿着第一侧壁膜形成在SiGe膜上的第二侧壁膜,沿着SiGe膜和第二侧壁膜的侧表面形成在源极/漏极接触区域上的第三侧壁膜,以及形成在第一侧壁膜上的第一硅化物膜 源极/漏极接触区域。