专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08390990B2 Solid electrolytic capacitor having a cathode lead frame 有权
标题翻译：具有阴极引线框架的固体电解电容器
公开(公告)号：US08390990B2
公开(公告)日：2013-03-05
申请号：US12750954
申请日：2010-03-31
申请人： Atsushi Furuzawa , Hiroaki Izu
发明人： Atsushi Furuzawa , Hiroaki Izu
IPC分类号： H01G4/228 , H01G9/04 , H01G9/145
CPC分类号： H01G9/012 , H01G9/10 , H01G9/15
摘要： A solid electrolytic capacitor includes a capacitor element having an anode portion, a dielectric film and a cathode portion, an anode lead frame, a cathode lead frame, and a molded resin for covering at least a part of the anode and cathode lead frames and the capacitor element. In a cathode lead frame opposed portion opposed to the capacitor element with a conductive adhesive material being interposed is provided with a through hole having a narrowed portion smaller in diameter than other portions between a capacitor-element-side opening portion and a molded-resin-side opening portion, and the conductive adhesive material is formed in the through hole.
摘要翻译：固体电解电容器包括具有阳极部分，电介质膜和阴极部分的电容器元件，阳极引线框架，阴极引线框架和用于覆盖阳极和阴极引线框架的至少一部分的模制树脂，以及电容元件。在与具有导电性粘合剂材料的电容器元件相对的阴极引线框架相对部分中设置有通孔，该通孔的直径小于电容器元件侧开口部分和模制树脂密封件之间的其它部分的直径，并且导电性粘合材料形成在通孔中。

22. 发明授权

US07489498B2 Capacitors and methods for manufacturing the same 失效
标题翻译：电容器及其制造方法
公开(公告)号：US07489498B2
公开(公告)日：2009-02-10
申请号：US11511470
申请日：2006-08-29
申请人： Hiroaki Izu , Takahisa Iida , Mutsumi Yano , Mamoru Kimoto
发明人： Hiroaki Izu , Takahisa Iida , Mutsumi Yano , Mamoru Kimoto
IPC分类号： H01G9/00
CPC分类号： H01G9/012 , H01G9/042 , H01G9/08 , Y10T29/41 , Y10T29/417
摘要： A capacitor element comprises an anode, a dielectric layer formed on the anode, an electrolyte layer formed on the dielectric layer, and a cathode formed on the electrolyte layer. On the cathode formed by the surface of the capacitor element, a conductive adhesive layer containing silver particles and an organic silane layer made from aminopropyltriethoxysilane (APTES) are sequentially formed, and the cathode and a cathode terminal are connected through the conductive adhesive layer and the organic silane layer. In addition, an anode terminal is connected to an anode lead which exposed from the anode by welding.
摘要翻译：电容器元件包括阳极，在阳极上形成的电介质层，形成在电介质层上的电解质层和形成在电解质层上的阴极。在由电容器元件的表面形成的阴极上，依次形成由氨基丙基三乙氧基硅烷（APTES）制成的含有银粒子的导电性粘合剂层和有机硅烷层，阴极和阴极端子通过导电性粘合剂层和有机硅烷层。此外，阳极端子连接到通过焊接从阳极暴露的阳极引线。

23. 发明申请

US20080239630A1 ELECTROLYTIC CAPACITOR 审中-公开
标题翻译：电解电容器
公开(公告)号：US20080239630A1
公开(公告)日：2008-10-02
申请号：US11837226
申请日：2007-08-10
申请人： Hiroaki Izu , Takahisa Iida , Mutsumi Yano , Takashi Umemoto , Hiroshi Nonoue
发明人： Hiroaki Izu , Takahisa Iida , Mutsumi Yano , Takashi Umemoto , Hiroshi Nonoue
IPC分类号： H01G9/042
CPC分类号： H01G9/052 , H01G9/012 , H01G9/15
摘要： The present invention provides an electrolytic capacitor having a large electrostatic capacity.In the solid electrolytic capacitor, a capacitor element provided with; an anode in which a part of an anode lead is embedded in the inside of an outer package made of an epoxy resin or the like; an oxide layer containing niobium oxide formed on the anode; and a cathode formed on the oxide layer; is embedded. The anode lead is composed of a niobium alloy containing at least one of vanadium and zirconium, and its one end is embedded in the anode composed of a porous sintered body of metal particles containing niobium, and the other end is connected to an anode terminal. The cathode is composed of a conductive polymer layer such as polypyrrole, a first conductive layer containing carbon particles, and a second conductive layer containing silver particles, and one end of a cathode terminal is connected to the cathode via a third conductive layer containing silver particles. Further, each other end of the anode terminal and the cathode terminal is projected out of an outer package.
摘要翻译：本发明提供一种静电容量大的电解电容器。在固体电解电容器中，设置有电容器元件; 阳极引线的一部分嵌入在由环氧树脂等制成的外包装的内部的阳极; 在阳极上形成含有氧化铌的氧化物层; 和形成在氧化物层上的阴极; 被嵌入。阳极引线由含有钒和锆中的至少一种的铌合金构成，其一端嵌入由包含铌的金属粒子的多孔烧结体构成的阳极中，另一端与阳极端子连接。阴极由聚吡咯等导电性聚合物层，含有碳粒子的第一导电层和含有银粒子的第二导电层构成，阴极端子的一端经由含有银粒子的第三导电层与阴极连接。此外，阳极端子和阴极端子的另一端从外包装中突出。

24. 发明申请

US20060222036A1 Semiconductor laser device and method of fabricating the same 有权
公开(公告)号：US20060222036A1
公开(公告)日：2006-10-05
申请号：US11393891
申请日：2006-03-31
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00 , H01S3/06 , H01S3/07
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

25. 发明授权

US07807490B2 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US07807490B2
公开(公告)日：2010-10-05
申请号：US12216928
申请日：2008-07-14
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
摘要翻译：提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

26. 发明申请

US20090262772A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20090262772A1
公开(公告)日：2009-10-22
申请号：US12492517
申请日：2009-06-26
申请人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
发明人： Tsutomu Yamaguchi , Masayuki Hata , Takashi Kano , Masayuki Shono , Hiroki Ohbo , Yasuhiko Nomura , Hiroaki Izu
IPC分类号： H01S5/00 , H01L33/00
CPC分类号： H01S5/30 , H01L24/05 , H01L2224/04042 , H01L2224/48463 , H01L2224/73265 , H01L2924/00
摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.
摘要翻译：获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

27. 发明申请

US20080280445A1 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
公开(公告)号：US20080280445A1
公开(公告)日：2008-11-13
申请号：US12216928
申请日：2008-07-14
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/306
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.

28. 发明授权

US07405096B2 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US07405096B2
公开(公告)日：2008-07-29
申请号：US11080398
申请日：2005-03-16
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00 , H01L29/20
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
摘要翻译：提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

29. 发明申请

US20070285876A1 Solid electrolytic capacitor and method of manufacturing solid electrolytic capacitor 有权
标题翻译：固体电解电容器及固体电解电容器的制造方法
公开(公告)号：US20070285876A1
公开(公告)日：2007-12-13
申请号：US11802975
申请日：2007-05-29
申请人： Kazuhiro Takatani , Mutsumi Yano , Hiroaki Izu , Takahisa Iida , Takashi Umemoto , Hiroshi Nonoue
发明人： Kazuhiro Takatani , Mutsumi Yano , Hiroaki Izu , Takahisa Iida , Takashi Umemoto , Hiroshi Nonoue
IPC分类号： H01G4/06 , H01G9/00 , H01G5/013
CPC分类号： H01G9/08 , C08G59/621 , C08G59/686 , C08L63/00 , H01G9/02 , H01G11/56 , Y02E60/13 , Y10T29/417 , C08L2666/16
摘要： A solid electrolytic capacitor includes a capacitor element having a niobium oxide layer arranged between an anode and a cathode, and an outer package covering the capacitor element. The niobium oxide layer contains fluorine and phosphorus, and the outer package contains epoxy resin, phenol resin, filler and an imidazole compound.
摘要翻译：固体电解电容器包括具有布置在阳极和阴极之间的铌氧化物层的电容器元件和覆盖电容器元件的外部封装。铌氧化物层含有氟和磷，外包装包含环氧树脂，酚醛树脂，填料和咪唑化合物。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式