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21. 发明授权

US6023020A Solar cell and method for manufacturing the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US6023020A
公开(公告)日：2000-02-08
申请号：US950204
申请日：1997-10-14
申请人： Mikihiko Nishitani , Takayuki Negami , Naoki Kohara , Takahiro Wada , Yasuhiro Hashimoto
发明人： Mikihiko Nishitani , Takayuki Negami , Naoki Kohara , Takahiro Wada , Yasuhiro Hashimoto
IPC分类号： H01L31/032 , H01L31/0336
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.
摘要翻译：提供了利用黄铜矿半导体并降低pn结的结界面上的缺陷密度的太阳能电池。该太阳能电池包括基板，形成在基板上的背面电极，形成在背面电极上的p型黄铜矿半导体薄膜，形成为与p型黄铜矿形成pn结的n型半导体薄膜半导体薄膜和形成在n型半导体薄膜上的透明电极。在p型黄铜矿半导体薄膜和n型半导体薄膜之间形成具有比p型黄铜矿半导体更高的电阻率的材料。由该材料制成的薄膜可以通过从溶液中沉积而形成。例如，通过使半导体的表面与含有IIIb族元素的盐，含有VIb族元素的有机物质和酸混合的溶液与CuInSe 2的p型黄铜矿类半导体的表面形成CuInS 2，。

22. 发明授权

US5728231A Precursor for semiconductor thin films and method for producing semiconductor thin films 失效
标题翻译：用于半导体薄膜的前体及半导体薄膜的制造方法
公开(公告)号：US5728231A
公开(公告)日：1998-03-17
申请号：US648497
申请日：1996-05-15
申请人： Takayuki Negami , Masaharu Terauchi , Mikihiko Nishitani , Takahiro Wada
发明人： Takayuki Negami , Masaharu Terauchi , Mikihiko Nishitani , Takahiro Wada
IPC分类号： C23C14/06 , C23C14/08 , C23C14/58 , H01L31/032 , H01L31/0336 , H01L31/18
CPC分类号： C23C14/5866 , C23C14/0623 , C23C14/08 , H01L31/0322 , H01L31/0323 , H01L31/0749 , Y02E10/541 , Y02P70/521 , Y10S438/93 , Y10T428/12528 , Y10T428/12611 , Y10T428/12681 , Y10T428/12903
摘要： A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are main components of the semiconductor thin film are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing a thin film of oxide comprising the Groups IB and IIIA elements on the substrate wherein the content of at least one of the Groups IB and IIIA elements is varied in the direction of film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in an atmosphere containing a Group VIA element. The present invention provides a precursor for manufacturing a semiconductor thin film and a method for manufacturing the semiconductor thin film using the precursor which are suitable for manufacturing a semiconductor thin film having a chalcopyrite structure that has a high and uniform energy conversion efficiency when the semiconductor thin film is used as a photoabsorptive layer of a solar cell.
摘要翻译：用于制造半导体薄膜的前体，其中包含至少一种元素作为掺杂剂的氧化物薄膜，其选自由IA，IIA，IIB，VA和VB族元素组成的组以及IB和IIIA族元素，半导体薄膜的主要成分沉积在基板上，或用于制造半导体薄膜的前体，该半导体薄膜是通过在衬底上沉积包含IB和IIIA族元素的氧化物的薄膜而形成的，其中至少一个 IB和IIIA族元素在膜厚方向上是不同的，以及一种制造半导体薄膜的方法，包括在含有VIA元素的气氛中对用于制造半导体薄膜的前体进行热处理的步骤。本发明提供一种用于制造半导体薄膜的前体和使用该前体制造半导体薄膜的方法，该半导体薄膜适用于制造具有高半导体薄片的具有高且均匀的能量转换效率的黄铜矿结构的半导体薄膜膜被用作太阳能电池的光吸收层。

23. 发明授权

US5519820A Waveform display apparatus for easily realizing high-definition waveform observation 失效
标题翻译：波形显示装置，用于轻松实现高清晰度波形观察
公开(公告)号：US5519820A
公开(公告)日：1996-05-21
申请号：US385555
申请日：1995-02-08
申请人： Takehiko Kawauchi , Yoshifumi Imazu , Katsuhiko Kamiyama , Mitsuyoshi Takano , Katsuhisa Iiyoshi , Takahiro Wada , Aiichi Katayama
发明人： Takehiko Kawauchi , Yoshifumi Imazu , Katsuhiko Kamiyama , Mitsuyoshi Takano , Katsuhisa Iiyoshi , Takahiro Wada , Aiichi Katayama
IPC分类号： G01R13/34 , G01R23/16 , G01R23/163 , G01R23/173 , G01R27/32 , G06T3/00
CPC分类号： G01R23/163 , G01R13/345 , G01R23/16 , G01R23/173 , G01R27/32 , Y10S715/97
摘要： A measurement unit U100 measures an input signal to be measured by sweeping frequencies in a measurement range having a predetermined frequency band so as to obtain waveform data to be developed on the frequency axis such as spectrum data in, e.g., a spectrum analyzer. The waveform data obtained by the measurement of the measurement unit U100 is displayed by a display device 500 via a display data processor U20 included in a control unit U200 to be described later to be developed on the frequency axis of the display device, i.e., in correspondence with the measurement frequencies. The control unit U200 includes a measurement controller U30 for controlling the measurement unit U100 so as to display waveform data obtained by enlarging or reducing waveform data, before a measurement frequency condition is changed, at a predetermined magnification to have a predetermined point on the frequency axis as the center on the basis of a change in measurement frequency condition set by a condition setting unit U900, and an enlargement display/stable display processor U40 for controlling the display data processor U20. The enlargement display/stable display processor U40 realizes high-definition waveform observation as the gist of this invention, and substantially has a function of controlling the display device U500 as the control unit U200.
摘要翻译：测量单元U100通过在具有预定频带的测量范围内的频率扫描来测量要测量的输入信号，以获得在频率轴上显影的波形数据，例如频谱分析仪中的频谱数据。通过测量单元U100的测量获得的波形数据由显示装置500经由包括在稍后描述的控制单元U200中的显示数据处理器U20显示在显示装置的频率轴上，即在与测量频率的对应关系。控制单元U200包括用于控制测量单元U100的测量控制器U30，以便以预定的倍率显示在测量频率条件改变之前通过放大或缩小波形数据而获得的波形数据，以在频率轴上具有预定点作为基于由条件设置单元U900设置的测量频率条件的改变的中心，以及用于控制显示数据处理器U20的放大显示/稳定显示处理器U40。放大显示/稳定显示处理器U40实现高清晰度波形观察作为本发明的要点，并且基本上具有控制显示装置U500作为控制单元U200的功能。

24. 发明授权

US5474622A Solar cell having chalcopyrite semiconductor film 失效
标题翻译：具有黄铜矿半导体膜的太阳能电池
公开(公告)号：US5474622A
公开(公告)日：1995-12-12
申请号：US316271
申请日：1994-09-30
申请人： Takayuki Negami , Mikihiko Nishitani , Shigemi Kohiki , Takahiro Wada
发明人： Takayuki Negami , Mikihiko Nishitani , Shigemi Kohiki , Takahiro Wada
IPC分类号： H01L21/363 , H01L31/032 , H01L31/04 , H01L33/28 , H01L33/30 , H01L33/40 , H01S5/00
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521 , Y10S148/153 , Y10S438/93
摘要： A solar cell device includes an absorber layer or heterojunction-forming layer which comprises a I-III-VI.sub.2 chalcopyrite semiconductor film containing a Group VIIA element as a dopant. The semiconductor film can be made by depositing a I-III-VI.sub.2 chalcopyrite compound film onto a substrate while evaporating onto the substrate a Group VIIA element to obtain a I-III-VI.sub.2 chalcopyrite compound film containing a Group VIIA element therein as a dopant.
摘要翻译：太阳能电池器件包括吸收层或异质结形成层，其包含含有VIIA族元素作为掺杂剂的I-III-VI2黄铜矿半导体膜。半导体膜可以通过在衬底上沉积I-III-VI2黄铜矿化合物膜，同时将第VIIA族元素蒸发到衬底上，以获得其中含有VIIA族元素的I-III-VI2黄铜矿化合物膜作为掺杂剂。

25. 发明授权

US5445847A Method for preparing chalcopyrite-type compound 失效
标题翻译：制备黄铜矿型化合物的方法
公开(公告)号：US5445847A
公开(公告)日：1995-08-29
申请号：US249999
申请日：1994-05-27
申请人： Takahiro Wada , Mikihiko Nishitani , Takayuki Negami
发明人： Takahiro Wada , Mikihiko Nishitani , Takayuki Negami
IPC分类号： H01L31/032 , B05D1/36
CPC分类号： H01L21/02568 , H01L21/02614 , H01L31/0322 , Y02E10/541 , Y10S438/93
摘要： A chalcopyrite-type compound, for instance, CuInS.sub.2 or CuGaS.sub.2, is prepared by subjecting a Group I-III oxide composition, containing at least one of the Group Ib element, for instance copper (Cu), and at least one of the Group IIIb element, for instance indium (In) or gallium (Ga) to a heat treatment under a reducing atmosphere containing the Group VIb element, for instance sulfur (S) or selenium (Se), or under an atmosphere containing a reducing compound of the Group VIb element, thereby converting said oxide composition into a chalcopyrite-type compound.
摘要翻译：黄铜矿型化合物，例如CuInS 2或CuGaS 2，通过使含有Ib族元素中的至少一种的例如铜（Cu）和IIIb族中的至少一种的I-III族氧化物组合物元素，例如铟（In）或镓（Ga）在含有VIb族元素，例如硫（S）或硒（Se）的还原气氛下的热处理，或在含有本发明的还原性化合物的气氛 VIb元素，从而将所述氧化物组合物转化为黄铜矿型化合物。

26. 发明授权

US5422304A Method for producing a thin film, and a semiconductor device having the thin film 失效
标题翻译：薄膜的制造方法以及具有该薄膜的半导体装置
公开(公告)号：US5422304A
公开(公告)日：1995-06-06
申请号：US309552
申请日：1994-09-20
申请人： Shigemi Kohiki , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
发明人： Shigemi Kohiki , Takayuki Negami , Mikihiko Nishitani , Takahiro Wada
IPC分类号： C01B19/04 , C01G1/00 , H01L21/203 , H01L31/032 , H01L31/04 , H01L31/068 , H01L31/10 , H01L21/20
CPC分类号： H01L31/032 , H01L31/0322 , H01L31/0323 , H01L31/068 , Y02E10/541 , Y02E10/547 , Y10S438/93
摘要： Chalcopyrite compound semiconductor thin films represented by I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I-III-VI.sub.2-x VII.sub.x chalcopyrite homojunction are provided. Such chalcopyrite compound semiconductor thin films are produced by radiating molecular beams or ion beams of the I, III, VI, and V or VII group elements simultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atoms after the formation thereof. Pollution-free solar cells are also provided, which are formed by the steps of forming a structure of a lower electrode, a chalcopyrite semiconductor thin film, and an upper electrode and radiating accelerated ion beams of a V, VII, or VIII group element thereto.
摘要翻译：由I-III-VI2-xVx或I-III-VI2-xVIIx表示的黄铜矿化合物半导体薄膜和具有I-III-VI2 / I-III-VI2-xVx或I-III-VI2 / 提供了III-VI2-xVIIx型黄铜矿同质结。这种黄铜矿化合物半导体薄膜通过同时辐射I，III，VI和V或VII族元素的分子束或离子束，或者通过在形成之后掺杂具有VII-基团原子的I-III-VI2黄铜矿薄膜其中。还提供了无污染的太阳能电池，其通过形成下电极，黄铜矿半导体薄膜和上电极的结构的步骤形成，并且将V，VII或VIII族元素的加速离子束辐射到其上。

27. 外观设计

USD626922S1 Light-emitting diode 有权
公开(公告)号：USD626922S1
公开(公告)日：2010-11-09
申请号：US29356278
申请日：2010-02-23
申请人： Takahiro Wada
设计人： Takahiro Wada

28. 外观设计

USD602884S1 Light-emitting diode 有权
公开(公告)号：USD602884S1
公开(公告)日：2009-10-27
申请号：US29329832
申请日：2008-12-22
申请人： Takahiro Wada , You Otaki , Kenji Sasuga
设计人： Takahiro Wada , You Otaki , Kenji Sasuga

29. 发明申请

US20050134479A1 Vehicle display system 审中-公开
标题翻译：车载显示系统
公开(公告)号：US20050134479A1
公开(公告)日：2005-06-23
申请号：US11010731
申请日：2004-12-13
申请人： Kazuyoshi Isaji , Naohiko Tsuru , Takahiro Wada , Hiroshi Kaneko
发明人： Kazuyoshi Isaji , Naohiko Tsuru , Takahiro Wada , Hiroshi Kaneko
IPC分类号： G02F1/13 , B60K35/00 , B60R1/00 , B60R11/02 , G06T7/00 , G08G1/00 , G08G1/09 , G08G1/0962 , G08G1/0969 , G08G1/16
CPC分类号： G08G1/0969 , B60K35/00 , B60K2370/21 , B60K2370/334 , G08G1/163
摘要： A vehicle display system recognizes, from within a color image of a forward scenery of a subject vehicle, an object such as left and right brake lights of a leading vehicle or a halt sign, each of which includes a red light element. Of the recognized object, a given position on a display area in a windshield of the subject vehicle is extracted. The extracted given position is then highlighted on the display area so that a user of the subject vehicle can properly recognize the object including the red light element.
摘要翻译：车辆显示系统从目标车辆的前方风景的彩色图像中识别出诸如前方车辆的左右制动灯或停止标志的物体，每个物体包括红色光元件。在识别的对象中，提取了本车辆的挡风玻璃上的显示区域上的给定位置。所提取的给定位置然后在显示区域上突出显示，使得本车辆的使用者可以适当地识别包括红色光元件的物体。

30. 发明授权

US06665578B2 Linking method and linking apparatus 失效
公开(公告)号：US06665578B2
公开(公告)日：2003-12-16
申请号：US10307312
申请日：2002-12-02
申请人： Naomasa Ochi , Ryosuke Mori , Takahiro Wada
发明人： Naomasa Ochi , Ryosuke Mori , Takahiro Wada
IPC分类号： D04B3510
CPC分类号： D05B7/00
摘要： A linking method including the steps of opposing knitted fabrics to be linked to each other, stretching the opposed knitted fabrics in a course direction, stretching the opposed knitted fabrics in a wale direction, picking up an image of linking loops of each of the stretched knitted fabrics, detecting the positions of the linking loops based on a multiple gray-scale image, inserting a point needle through each of the linking loops, sewing a linking loop in the vicinity of an edge of each of the knitted fabrics, and linking together the linking loops other than the sewn linking loop by using the point needle; and an apparatus for linking knitted fabrics.

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