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    • 24. 发明授权
    • System and method for trasmitting/receving a signal in a communication system
    • 用于在通信系统中发送/接收信号的系统和方法
    • US08824379B2
    • 2014-09-02
    • US12380960
    • 2009-03-05
    • Jong-In KimJin-Ghoo ChoiSeung-Hee HanChi-Hyun Park
    • Jong-In KimJin-Ghoo ChoiSeung-Hee HanChi-Hyun Park
    • H04W4/00H04B7/14H04B7/185
    • H04B7/2606
    • Disclosed is a system and method for transmitting/receiving a signal in a communication system. In the system and method, a base station transmits data to a first relay station, which is connected directly thereto from among relay stations belonging to a first relay station group, through a first frame interval, and transmits data to a second relay station, which is connected directly thereto from among relay stations belonging to a second relay station group, through a second frame interval subsequent to the first frame interval. In the first frame interval or the second frame interval where no data is received from the base station, each of the first and second relay stations transmits data to a next relay station connected directly thereto within the same relay station group, and communicates data with a mobile station in direct communication therewith.
    • 公开了一种用于在通信系统中发送/接收信号的系统和方法。 在该系统和方法中,基站通过第一帧间隔将数据从属于第一中继站组的中继站直接与其直接连接的第一中继站发送到第二中继站,第二中继站将数据发送到第二中继站 通过属于第二中继站组的中继站直接连接到第一帧间隔之后的第二帧间隔。 在没有从基站接收到数据的第一帧间隔或第二帧间隔中,第一和第二中继站中的每一个向同一中继站组内直接与其相连的下一个中继站发送数据,并将数据与 移动台与其直接通信。
    • 27. 发明申请
    • System and method for trasmitting/receving a signal in a communication system
    • 用于在通信系统中发送/接收信号的系统和方法
    • US20090225694A1
    • 2009-09-10
    • US12380960
    • 2009-03-05
    • Jong-In KimJin-Ghoo ChoiSeung-Hee HanChi-Hyun Park
    • Jong-In KimJin-Ghoo ChoiSeung-Hee HanChi-Hyun Park
    • H04B7/14
    • H04B7/2606
    • Disclosed is a system and method for transmitting/receiving a signal in a communication system. In the system and method, a base station transmits data to a first relay station, which is connected directly thereto from among relay stations belonging to a first relay station group, through a first frame interval, and transmits data to a second relay station, which is connected directly thereto from among relay stations belonging to a second relay station group, through a second frame interval subsequent to the first frame interval. In the first frame interval or the second frame interval where no data is received from the base station, each of the first and second relay stations transmits data to a next relay station connected directly thereto within the same relay station group, and communicates data with a mobile station in direct communication therewith.
    • 公开了一种用于在通信系统中发送/接收信号的系统和方法。 在该系统和方法中,基站通过第一帧间隔将数据从属于第一中继站组的中继站直接与其直接连接的第一中继站发送到第二中继站,第二中继站将数据发送到第二中继站 通过属于第二中继站组的中继站直接连接到第一帧间隔之后的第二帧间隔。 在没有从基站接收到数据的第一帧间隔或第二帧间隔中,第一和第二中继站中的每一个向同一中继站组内直接与其相连的下一个中继站发送数据,并将数据与 移动台与其直接通信。
    • 28. 发明授权
    • Method and apparatus for plasma ion implantation of solid element
    • 固体元素等离子体离子注入的方法和装置
    • US09139902B2
    • 2015-09-22
    • US13044621
    • 2011-03-10
    • Seung-Hee HanJi-Young ByunHyun-Kwang SeokJun-Hyun HanYu-Chan KimSung-Bai LeeJin-Young Choi
    • Seung-Hee HanJi-Young ByunHyun-Kwang SeokJun-Hyun HanYu-Chan KimSung-Bai LeeJin-Young Choi
    • C23C14/34C23C14/35H01J37/34H01J37/32C23C14/48C23C14/16
    • C23C14/35C23C14/16C23C14/48H01J37/32532H01J37/3438H01J37/3467
    • Disclosed are an apparatus and a method for plasma ion implantation of a solid element, which enable plasma ion implantation of a solid element. According to the apparatus and method, a sample is placed on a sample stage in a vacuum chamber, and the inside of the vacuum chamber is maintained as a vacuum state. And, gas is supplied in the vacuum chamber, a first pulsed DC power is applied to a magnetron sputtering source so as to generate plasma ions of a solid element. The plasma ions of a solid element sputtered from the source are implanted on the surface of the sample. The first power is a pulse DC power capable of applying a high power the moment a pulse is applied while maintaining low average power. And, simultaneously with the applying of the first pulse power, a second power may be supplied to the sample stage, which is a high negative voltage pulse accelerating plasma ions of a solid element to the sample and synchronized to the pulse DC power for magnetron sputtering source. And, inductively coupled plasma may be generated in the vacuum chamber via antenna so as to increase ionization rate of a solid element and lower operation pressure of magnetron sputtering source.
    • 公开了固体元素的等离子体离子注入的装置和方法,其能够实现固体元素的等离子体离子注入。 根据该装置和方法,将样品放置在真空室中的样品台上,并将真空室的内部保持为真空状态。 并且,在真空室中供应气体,将第一脉冲DC功率施加到磁控溅射源,以产生固体元素的等离子体离子。 从源极溅射的固体元素的等离子体离子注入到样品的表面上。 第一功率是脉冲直流电力,能够在维持低平均功率的同时施加脉冲施加高功率。 并且,与施加第一脉冲功率同时,可以将第二功率提供给样品台,该样品台是将固体元素的等离子体离子加速至样品的高负电压脉冲,并与用于磁控溅射的脉冲直流电力同步 资源。 并且,可以通过天线在真空室中产生电感耦合等离子体,以增加固体元素的电离速率和降低磁控管溅射源的操作压力。