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    • 25. 发明申请
    • DISPLAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY SUBSTRATE
    • 具有该显示基板的显示基板和制造显示基板的方法
    • US20080185589A1
    • 2008-08-07
    • US12027102
    • 2008-02-06
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • Kyoung-Ju ShinJang-Soo KimChong-Chul Chai
    • H01L29/04H01L21/02G02F1/136
    • G02F1/136213G02F2001/136222
    • A display substrate includes a thin-film transistor (TFT) layer, a color filter layer and a pixel electrode formed on a substrate. The TFT layer includes a gate line, a data line electrically insulated from the gate line and extending in a direction different from the gate line, a TFT electrically connected to the gate line and the data line, and a storage electrode formed from the same layer as the gate line in each pixel. The color filter layer includes a storage hole extending to a portion of the TFT layer corresponding to the storage electrode. The storage hole has a horizontal cross-sectional area greater than the storage electrode, wherein the horizontal cross-sectional area is measured in a plane parallel to the substrate. The pixel electrode is formed on the color filter layer and in the storage hole to form a storage capacitor with the storage electrode.
    • 显示基板包括薄膜晶体管(TFT)层,滤色器层和形成在基板上的像素电极。 TFT层包括栅极线,与栅极线电绝缘并沿与栅极线不同的方向延伸的数据线,与栅极线和数据线电连接的TFT,以及由同一层形成的存储电极 作为每个像素中的栅极线。 滤色器层包括延伸到对应于存储电极的TFT层的一部分的存储孔。 存储孔具有大于存储电极的水平横截面积,其中在平行于衬底的平面中测量水平横截面面积。 像素电极形成在滤色器层和存储孔中,以与存储电极形成存储电容器。
    • 26. 发明授权
    • Liquid crystal display
    • 液晶显示器
    • US07230667B2
    • 2007-06-12
    • US10948701
    • 2004-09-23
    • Kyoung-Ju ShinChong-Chul Chai
    • Kyoung-Ju ShinChong-Chul Chai
    • G02F1/1343
    • G02F1/133514G02F2201/52G09G2300/0452
    • A liquid crystal display comprising an insulating substrate; a plurality of gate lines formed on the insulating substrate; a plurality of data lines formed on the insulating substrate and crossing the gate lines; a plurality of switching elements connected to the gate lines and data lines; and a plurality of pixel electrodes connected to the switching element, and wherein dots each having a red, green, blue, and white pixels are successively arranged, the ratios the liquid crystal capacitance, the storage capacitance, the parasitic capacitance, and ratio of channel width and length (W/L) of the switching elements between the red and green pixels and the blue and white pixels are same is provided.
    • 一种液晶显示器,包括绝缘基板; 形成在所述绝缘基板上的多个栅极线; 形成在所述绝缘基板上并与所述栅极线交叉的多条数据线; 连接到栅极线和数据线的多个开关元件; 以及连接到开关元件的多个像素电极,并且其中连续布置具有红色,绿色,蓝色和白色像素的点,液晶电容,存储电容,寄生电容和通道的比率 红色和绿色像素与蓝色和白色像素之间的开关元件的宽度和长度(W / L)相同。
    • 27. 发明申请
    • Thin film diode panel for trans-reflective liquid crystal display
    • 薄膜二极管面板用于反射式液晶显示
    • US20070080344A1
    • 2007-04-12
    • US10578029
    • 2004-10-29
    • Jin-Hong KimChong-Chul ChaiKyoung-Ju ShinJoon-Hak OhSung-Jin Hong
    • Jin-Hong KimChong-Chul ChaiKyoung-Ju ShinJoon-Hak OhSung-Jin Hong
    • H01L29/08H01L51/00
    • G02F1/133555G02F1/13624G02F1/1365
    • A thin film diode panel has a insulating substrate, a first and second gate lines (121, 122) formed on the insulating substrate, a reflection electrode (190a) and a transmission electrode (190b) formed on the insulating substrate, A first MIM diode (D1) is formed on the insulating substrate and connected to the first gate line (121) and the reflection electrode (190a). A second MIM diode (D2) is formed on the insulating substrate and connected to the second gate line (122) and the reflection electrode (190a). A third MIM diode (D1) is formed on the insulating substrate and connecting the first gate line (121) and the transmission electrode (190b). A fourth MIM diode (D21) is formed on the insulating substrate and connecting the second gate line (122) and the transmission electrode (190b). At least one of the first to fourth MIM diodes has a substantially different current-voltage (I-V) characteristic from the others.
    • 薄膜二极管面板具有绝缘基板,形成在绝缘基板上的第一和第二栅极线(121,122),形成在绝缘基板上的反射电极(190a)和透射电极(190b),第一 MIM绝缘二极管(D 1)形成在绝缘基板上并与第一栅极线(121)和反射电极(190a)连接。 第二MIM二极管(D 2)形成在绝缘基板上并连接到第二栅极线(122)和反射电极(190a)。 第三MIM二极管(D 1)形成在绝缘基板上并连接第一栅极线(121)和透射电极(190b)。 第四MIM二极管(D21)形成在绝缘基板上并连接第二栅极线(122)和透射电极(190b)。 第一至第四MIM二极管中的至少一个具有与其他MIM电流电压(I-V)特性相当大的不同。
    • 29. 发明授权
    • Thin film transistor substrate and method of manufacture
    • 薄膜晶体管基板及其制造方法
    • US07928437B2
    • 2011-04-19
    • US11955252
    • 2007-12-12
    • Kyoung-Ju ShinChong-Chul ChaiMee-Hye Jung
    • Kyoung-Ju ShinChong-Chul ChaiMee-Hye Jung
    • H01L29/04
    • H01L27/1288H01L27/0248H01L27/1214
    • A thin film transistor (“TFT”) substrate in which the size of a pixel TFT formed in a display area is reduced using a single slit mask, and the length of the channel area of a protection TFT constituting an electrostatic discharge protection circuit formed in a non-display area is formed larger than that of the pixel TFT using the same mask pattern. The TFT substrate includes a signal line and a discharge line formed on a substrate, a signal supply pad formed on one end of the signal line to supply a signal to the signal line, and an electrostatic discharge protection circuit including at least one protection TFT including a plurality of channels formed between the signal supply pad and the discharge line and/or between the signal line and the discharge line.
    • 使用单个狭缝掩模,在显示区域中形成的像素TFT的尺寸减小的薄膜晶体管(“TFT”)基板,以及构成静电放电保护电路的保护TFT的沟道面积的长度 使用相同的掩模图案,非显示区域形成为大于像素TFT的非显示区域。 TFT基板包括形成在基板上的信号线和放电线,形成在信号线的一端上以向信号线提供信号的信号供给焊盘,以及包括至少一个保护TFT的静电放电保护电路, 形成在信号供给焊盘和放电线之间和/或信号线与放电线之间的多个通道。