会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 22. 发明申请
    • Non-volatile memory device and fabricating method thereof
    • 非易失性存储器件及其制造方法
    • US20050139900A1
    • 2005-06-30
    • US11019304
    • 2004-12-23
    • Sung JungJum Kim
    • Sung JungJum Kim
    • H01L21/8247H01L27/115H01L29/423H01L29/788H01L29/76H01L21/336
    • H01L27/11521H01L27/115H01L29/42336H01L29/7883
    • The present invention provides a non-volatile memory device and fabricating method thereof, in which a height of a floating gate conductor layer pattern is sustained without lowering a degree of integration and by which a coupling ratio is raised. The present invention includes a trench type device isolation layer defining an active area within a semiconductor substrate, a recess in an upper part of the device isolation layer to have a prescribed depth, a tunnel oxide layer on the active area of the semiconductor substrate, a floating gate conductor layer pattern on the tunnel oxide layer, a conductive floating spacer layer provided to a sidewall of the floating gate conductor layer pattern and a sidewall of the recess, a gate-to-gate insulating layer on the floating fate conductor layer pattern and the conductive floating spacer layer, and a control gate conductor layer on the gate-to-gate insulating layer.
    • 本发明提供了一种非易失性存储器件及其制造方法,其中浮动栅极导体层图案的高度在不降低积分度的情况下被维持并且耦合比率被提高。 本发明包括限定半导体衬底内的有源区域的沟槽型器件隔离层,在器件隔离层的上部具有规定深度的凹部,半导体衬底的有源区上的隧道氧化物层, 在所述隧道氧化物层上的浮栅导体层图案,设置在所述浮栅导体层图案的侧壁和所述凹部的侧壁的导电浮动间隔层,所述浮置导体层图案上的栅极至栅极绝缘层,以及 导电浮动间隔层,以及栅极至栅极绝缘层上的控制栅极导体层。