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21. 发明申请

US20060222933A1 Cylindrical lithium secondary battery 有权
标题翻译：圆柱形锂二次电池
公开(公告)号：US20060222933A1
公开(公告)日：2006-10-05
申请号：US11396646
申请日：2006-04-04
申请人： Masato Fujikawa , Kohei Suzuki , Kaoru Inoue , Mikinari Shimada
发明人： Masato Fujikawa , Kohei Suzuki , Kaoru Inoue , Mikinari Shimada
IPC分类号： H01M2/18 , H01M2/16
CPC分类号： H01M10/0587 , H01M2/1673 , H01M4/366 , H01M10/052 , H01M10/4235 , Y02T10/7011
摘要： A cylindrical lithium secondary battery that is resistant to breakage of the porous heat-resistant layer and therefore excellent in both safety and battery characteristics. The cylindrical lithium secondary battery includes: a battery can having a bottom, a side wall, and an open top; an electrode assembly; a non-aqueous electrolyte; and a sealing plate covering the open top of the battery can that accommodates the electrode assembly and the electrolyte. The electrode assembly includes a strip-like positive electrode and a strip-like negative electrode that are wound together with a porous heat-resistant layer and a separator interposed between the positive and negative electrodes. The thickness A of the porous heat-resistant layer and the thickness B of the side wall of the battery can satisfy the relation: 0.005≦A/B≦0.1.
摘要翻译：一种耐多孔耐热层破损的圆柱形锂二次电池，因此具有优异的安全性和电池特性。圆筒形锂二次电池包括：具有底部，侧壁和开口顶部的电池壳; 电极组件; 非水电解质; 以及覆盖电池壳体的开口顶部的密封板，其容纳电极组件和电解质。电极组件包括带状的正电极和带状负电极，其与多孔耐热层一起缠绕在一起，隔离件插入在正极和负极之间。多孔耐热层的厚度A和电池侧壁的厚度B可以满足以下关系：0.005 <= A / B <= 0.1。

22. 发明授权

US07092733B2 Mobile radio communication apparatus capable to plurality of radio communication systems 有权
公开(公告)号：US07092733B2
公开(公告)日：2006-08-15
申请号：US10053544
申请日：2002-01-24
申请人： Manabu Mukai , Shun-ichi Kubo , Takashi Wakutsu , Daisuke Takeda , Jun Mitsugi , Kaoru Inoue , Takeshi Tomizawa
发明人： Manabu Mukai , Shun-ichi Kubo , Takashi Wakutsu , Daisuke Takeda , Jun Mitsugi , Kaoru Inoue , Takeshi Tomizawa
IPC分类号： H04M1/00
CPC分类号： H04B1/0003
摘要： A mobile radio communication apparatus comprises a wireless transmitter-receiver device configured to perform transmission/reception of a radio signal, a signal processing device including a resource to which functions are defined, wherein the resource handles at least a modem function and a protocol function, and configured to perform a signal processing necessary in the transmission/reception by use of the resource, and a controller that controls the signal processing device to redefine, to the resource, another modem function and another protocol function corresponding to respective one of the mobile communication systems.

23. 发明授权

US07078743B2 Field effect transistor semiconductor device 有权
标题翻译：场效应晶体管半导体器件
公开(公告)号：US07078743B2
公开(公告)日：2006-07-18
申请号：US10834362
申请日：2004-04-29
申请人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
发明人： Tomohiro Murata , Yutaka Hirose , Yoshito Ikeda , Tsuyoshi Tanaka , Kaoru Inoue , Daisuke Ueda , Yasuhiro Uemoto
IPC分类号： H01L31/0328
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/02458 , H01L21/0254 , H01L29/2003 , H01L29/4175 , H01L29/41766
摘要： A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlxGa1-xN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlyGa1-yN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.
摘要翻译：半导体器件具有：形成在导电基板上并具有高电阻的Al x Ga 1-x N的缓冲层; 形成在缓冲层上的元件形成层，具有沟道层，由未掺杂的GaN和N型Al y Ga 1-y N制成; 以及选择性地形成在元件形成层上的源电极，漏电极和栅电极。源电极被填充在设置在缓冲层和元件形成层中的通孔中，因此电连接到导电基板。

24. 发明申请

US20060154139A1 Lithium secondary battery and method for producing the same 有权
标题翻译：锂二次电池及其制造方法
公开(公告)号：US20060154139A1
公开(公告)日：2006-07-13
申请号：US11330183
申请日：2006-01-12
申请人： Masato Fujikawa , Akira Nagasaki , Tetsu Hashimoto , Kaoru Inoue , Mikinari Shimada
发明人： Masato Fujikawa , Akira Nagasaki , Tetsu Hashimoto , Kaoru Inoue , Mikinari Shimada
IPC分类号： H01M2/18 , H01M10/04
CPC分类号： H01M10/052 , H01M2/145 , H01M2/18 , H01M4/04 , H01M10/0431 , H01M10/0587 , H01M10/4235 , H01M2004/027 , Y10T29/49115
摘要： In a lithium secondary battery of the present invention, the positive electrode includes a positive electrode current collector and a positive electrode active material layer carried on the positive electrode current collector, the negative electrode includes a negative electrode current collector and a negative electrode active material layer carried on the negative electrode current collector, a heat-resistant layer is formed on the negative electrode, and an insulating tape is attached onto at least a part of the exposed portion of the positive electrode current collector that is opposite to the end of the negative electrode active material layer. Thus, by forming the heat-resistant layer on the negative electrode and attaching the insulating tape onto a part of the exposed portion of the positive electrode current collector, it is possible to efficiently provide a lithium secondary battery exhibiting high safety.
摘要翻译：在本发明的锂二次电池中，所述正极具有负极集电体和负极活性物质层，负极包括负极集电体和负极活性物质层承载在负极集电体上，在负极上形成耐热层，绝缘带附着在正极集电体的暴露部分的与负极端相反的至少一部分上电极活性物质层。因此，通过在负极上形成耐热层并将绝缘带附着在正极集电体的露出部分的一部分上，可以有效地提供具有高安全性的锂二次电池。

25. 发明申请

US20050189651A1 Contact formation method and semiconductor device 审中-公开
标题翻译：触点形成方法和半导体器件
公开(公告)号：US20050189651A1
公开(公告)日：2005-09-01
申请号：US10625546
申请日：2003-07-24
申请人： Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
发明人： Yutaka Hirose , Yoshito Ikeda , Kaoru Inoue
IPC分类号： H01L21/285 , H01L23/48 , H01L33/00 , H01L33/32 , H01L33/40 , H01S5/042 , H01S5/323
CPC分类号： H01L21/28575 , H01L33/0095 , H01L33/32 , H01L33/40 , H01S5/0425 , H01S5/32341
摘要： An object of the present invention is to reduce the resistance of an electrode of a Group III nitride semiconductor. A thin Si film and a thin Ti film are formed selectively in a contact formation region on a surface of an AlGaN layer as a Group III nitride semiconductor layer formed on a substrate, and the resulting substrate is heat-treated at a high temperature. By the heat treatment, Si is diffused into the AlGaN layer in the ohmic contact formation region at a concentration of about 1020 cm3. Further, an electron density sufficiently high to provide an ohmic characteristic through a reaction between Si and Ti is provided. Thus, a low resistance TiSi2 portion resulting from the reaction between Si and Ti, a TiN portion resulting from a reaction between Ti and AlGaN and a Group III metal portion of Ga and Al devoid of nitrogen are formed in the contact formation region thereby to provide a low resistance electrode film mainly comprising TiSi2.
摘要翻译：本发明的目的是降低III族氮化物半导体的电极的电阻。在AlGaN层的表面上的接触形成区域中选择性地形成薄的Si膜和薄的Ti膜，作为形成在衬底上的III族氮化物半导体层，并将所得到的衬底在高温下进行热处理。通过热处理，Si在欧姆接触形成区域中扩散到约10 20 cm 3的浓度的AlGaN层中。此外，提供足够高的电子密度以通过Si和Ti之间的反应提供欧姆特性。因此，形成由Si和Ti之间的反应产生的低电阻TiSi 2 H 2部分，由Ti和AlGaN之间的反应导致的TiN部分和缺少氮的Ga和Al的III族金属部分在接触形成区域中，由此提供主要包含TiSi 2 N的低电阻电极膜。

26. 发明授权

US06883524B2 Wrapper paper for smoking articles 有权
标题翻译：吸烟用品包装纸
公开(公告)号：US06883524B2
公开(公告)日：2005-04-26
申请号：US10705942
申请日：2003-11-13
申请人： Satoshi Ishikawa , Takeo Tsutsumi , Makoto Sato , Kaoru Inoue
发明人： Satoshi Ishikawa , Takeo Tsutsumi , Makoto Sato , Kaoru Inoue
IPC分类号： D21H27/00 , A24D1/00 , A24D1/02 , D21H17/63 , D21H17/65
CPC分类号： A24D1/02
摘要： Wrapper paper for a smoking article carries 1 g/m2 to 15 g/m2 of a burn adjusting agent and 1 g/m2 to 30 g/m2 of a calcium phosphate-based compound in the wrapper paper.
摘要翻译：用于吸烟制品的包装纸将1g / m 2至15g / m 2的燃烧调节剂和1g / m 2 2 / 至包装纸中的30g / m 2磷酸钙基化合物。

27. 发明授权

US06555268B1 Negative electrode for secondary cell, negative plate for secondary cell, and secondary cell comprising the same 失效
标题翻译：二次电池用负极，二次电池用负极板，二次电池用二次电池
公开(公告)号：US06555268B1
公开(公告)日：2003-04-29
申请号：US09485335
申请日：2000-05-10
申请人： Kaoru Inoue , Shusaku Goto , Yui Takahashi , Toyoji Sugimoto
发明人： Kaoru Inoue , Shusaku Goto , Yui Takahashi , Toyoji Sugimoto
IPC分类号： H01M462
CPC分类号： H01M4/621 , H01M4/133 , H01M4/587 , H01M4/622 , H01M10/0525
摘要： A binder made of a mixture of a first binder component including styrene butadiene copolymer containing styrene at between 20% and 70%, and a second binder component selected from at least one of styrene butadiene copolymer containing styrene at between 80% and 100% and polystyrene is used for the negative electrode of rechargeable batteries comprising a carbon material and the binder. The use of the negative electrode comprising the carbon material and binder results in good resistance to peeling of a coated film, and thus ease of handling of a negative electrode sheet. Consequently, rechargeable batteries with good low-temperature discharge characteristics are supplied at good yield.
摘要翻译：由含有20％至70％的苯乙烯的苯乙烯丁二烯共聚物的第一粘合剂组分和选自至少一种含有80％至100％的苯乙烯的苯乙烯丁二烯共聚物和第二粘合剂组分的混合物制成的粘合剂和聚苯乙烯用于包含碳材料和粘合剂的可再充电电池的负极。通过使用由碳材料和粘合剂构成的负极，能够很好地抵抗涂膜的剥离，容易处理负极片。因此，以良好的收率提供具有良好低温放电特性的可充电电池。

28. 发明授权

US06323538B1 Bipolar transistor and method for fabricating the same 有权
标题翻译：双极晶体管及其制造方法
公开(公告)号：US06323538B1
公开(公告)日：2001-11-27
申请号：US09480942
申请日：2000-01-11
申请人： Takeshi Fukuda , Daisuke Ueda , Kaoru Inoue , Katsunori Nishii , Toshinobu Matsuno
发明人： Takeshi Fukuda , Daisuke Ueda , Kaoru Inoue , Katsunori Nishii , Toshinobu Matsuno
IPC分类号： H01L27082
CPC分类号： H01L29/66265 , H01L29/7317
摘要： An n-type first single crystal silicon layer is provided as collector region over a silicon substrate with a first insulating film interposed therebetween. A p-type first polysilicon layer is provided as an extension of a base region over the first single crystal silicon layer with a second insulating film interposed therebetween. A p-type second single crystal silicon layer is provided as intrinsic base region on a side of the first single crystal silicon layer, second insulating film and first polysilicon layer. An n-type third single crystal silicon layer is provided as emitter region on a side of the second single crystal silicon layer. And an n-type third polysilicon layer is provided on the first insulating film as extension of an emitter region and is connected to a side of the third single crystal silicon layer.
摘要翻译：在硅衬底上设置n型第一单晶硅层作为集电极区域，其间插入有第一绝缘膜。提供p型第一多晶硅层作为第一单晶硅层上的基极区域的延伸，其间插入第二绝缘膜。在第一单晶硅层，第二绝缘膜和第一多晶硅层的一侧设置p型第二单晶硅层作为本征基极区域。在第二单晶硅层的一侧设置n型第三单晶硅层作为发射极区域。并且在第一绝缘膜上设置n型第三多晶硅层作为发射极区域的延伸并且连接到第三单晶硅层的一侧。

29. 发明授权

US5942567A Resin-molded product and yellowing inhibitor 失效
标题翻译：树脂成型品和泛黄抑制剂
公开(公告)号：US5942567A
公开(公告)日：1999-08-24
申请号：US671194
申请日：1996-06-27
申请人： Kaoru Inoue , Takeyoshi Nishio , Arimitsu Usuki , Hisato Takeuchi
发明人： Kaoru Inoue , Takeyoshi Nishio , Arimitsu Usuki , Hisato Takeuchi
IPC分类号： C08J7/04 , C08K5/13 , C08K5/37 , C08L101/00
CPC分类号： C08K5/13 , C08K5/37
摘要： A resin-molded product includes a phenol-based oxidation inhibitor, and a thiol-based compound. The thiol-based compound reacts chemically with a coloring substance (or a compound having a quinone-type structure) resulting from the phenol-based oxidation inhibitor to interrupt a long conjugated system arising in the coloring substance. As a result, the absorption due to the coloring substance is canceled in the visible light region. Thus, the resin-molded product is inhibited from yellowing.
摘要翻译：树脂成型体包含酚系氧化抑制剂和硫醇系化合物。基于硫醇的化合物与由苯酚系氧化抑制剂得到的着色物质（或具有醌型结构的化合物）化学反应，以中断着色物质中产生的长的共轭体系。结果，由于着色物质引起的吸收在可见光区域被抵消。因此，可以防止树脂成型体发黄。

30. 发明授权

US5751030A Field effect transistor 失效
标题翻译：场效应晶体管
公开(公告)号：US5751030A
公开(公告)日：1998-05-12
申请号：US806798
申请日：1997-02-26
申请人： Kazuhisa Fujimoto , Toshinobu Matsuno , Kaoru Inoue
发明人： Kazuhisa Fujimoto , Toshinobu Matsuno , Kaoru Inoue
IPC分类号： H01L29/10 , H01L29/812 , H01L31/0328
CPC分类号： H01L29/8128 , H01L29/1029
摘要： On a GaAs substrate are provided a buffer layer comprising an Undope-GaAs layer, a first n-InGaAs layer having an In composition ratio of 0.2, a second n-InGaAs layer having an In composition ratio of 0.02, a contact layer comprising an N.sup.+ type GaAs layer, a gate electrode, a source electrode, and a drain electrode. The first n-InGaAs layer and the second n-InGaAs layer form active layers in which an operating current flows. The second n-InGaAs layer having excellent crystallinity is formed on the first n-InGaAs layer. Consequently, a field effect transistor which displays a super low distortion characteristic having IP2 of 67.2 dBm and IP3 of 35 dBm can be manufactured with good reproducibility.
摘要翻译：在GaAs衬底上设置缓冲层，其包括Undope-GaAs层，In组成比为0.2的第一n-InGaAs层，In组成比为0.02的第二n-InGaAs层，包含N + 型GaAs层，栅电极，源电极和漏电极。第一n-InGaAs层和第二n-InGaAs层形成其中工作电流流动的有源层。在第一n-InGaAs层上形成具有优异结晶度的第二n-InGaAs层。因此，可以以良好的再现性制造出具有IP2为67.2dBm，IP3为35dBm的超低失真特性的场效应晶体管。

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