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21. 发明申请

US20120295428A1 METHODS FOR PRETREATMENT OF GROUP III-NITRIDE DEPOSITIONS 有权
标题翻译：用于预处理III-NITRIDE沉积物的方法
公开(公告)号：US20120295428A1
公开(公告)日：2012-11-22
申请号：US13469048
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： H01L21/311
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).
摘要翻译：本公开的实施例涉及用于制造诸如发光二极管（LED），激光二极管（LD）或功率电子器件的器件的衬底和III族氮化物层的预处理的方法。本公开的一个实施方案提供了一种方法，包括在处理室中提供具有含铝表面的一个或多个基材，并将具有含铝表面的一个或多个基材中的每一个的表面暴露于预处理气体混合物以形成预处理表面。预处理气体混合物包括氨（NH 3），卤化铝气体（例如AlCl 3，AlCl）和含有卤素气体（例如Cl 2）或卤化氢气体（例如HCl）的含蚀刻剂的气体。

22. 发明申请

US20120291698A1 METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE SEMICONDUCTOR COMPOUNDS 有权
标题翻译：改善III族氮化物半导体化合物生长的方法
公开(公告)号：US20120291698A1
公开(公告)日：2012-11-22
申请号：US13469045
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： C30B25/14 , C30B25/18
CPC分类号： C30B25/14 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/40 , C30B29/403 , C30B29/406
摘要： Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.
摘要翻译：公开了采用先进缓冲层技术生长III族氮化物半导体化合物的方法。在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中提供合适的衬底。该方法包括通过使氨气流入处理室的生长区而形成AlN缓冲层，将含卤化铝的前体流过生长区，同时将另外的卤化氢或卤素气体流入生长区的生长区处理室。在缓冲层沉积期间流入生长区的附加卤化氢或卤素气体抑制均匀的AlN颗粒形成。卤化氢或卤素气体可以持续流动一段时间，同时关闭含卤化铝的前体的流动。

23. 发明申请

US20120235116A1 LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
标题翻译：具有增强量子效率的发光二极管和制造方法
公开(公告)号：US20120235116A1
公开(公告)日：2012-09-20
申请号：US13387713
申请日：2010-07-30
申请人： Jie Su , Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Lu Chen , Tetsuya Ishikawa
发明人： Jie Su , Olga Kryliouk , Yuriy Melnik , Hidehiro Kojiri , Lu Chen , Tetsuya Ishikawa
IPC分类号： H01L33/04 , C30B25/02 , H01B1/02 , C30B25/08
CPC分类号： H01L33/06 , H01L33/04 , H01L33/325
摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg—GaN) or magnesium doped aluminum gallium nitride (Mg—AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.
摘要翻译：量子阱结构的一个实施例包括有源区，包括有源层，其包括量子阱和阻挡层，其中一些或全部有源层是p型掺杂的。通过将PN结的位置定位在器件的有源区域中，P型掺杂部分或全部有源层提高了III-V族化合物半导体发光二极管的量子效率，从而能够在主动区域内发生主要的辐射复合。在一个实施例中，量子阱结构在具有共晶源合金的氢化物气相外延（HVPE）沉积室的簇工具中制造。在一个实施例中，氮化铟镓（InGaN）层和掺杂镁的氮化镓（Mg-GaN）或镁掺杂的氮化铝镓（Mg-AlGaN）层通过簇工具在分开的室中生长以避免铟和镁的交叉污染。还描述了使用III族金属共晶体通过氢化物气相外延掺杂的III族氮化物。在一个实施例中，提供了用于HVPE沉积p型或n型III族氮化物外延膜的源，该源包括具有III族的液相机械（共晶）混合物。在一个实施例中，提供了一种用于执行p型或n型III族氮化物外延膜的HVPE沉积的方法，该方法包括使用具有III族物质的液相机械（共晶）混合物。

24. 发明申请

US20100279020A1 METHOD OF FORMING IN-SITU PRE-GaN DEPOSITION LAYER IN HVPE 审中-公开
标题翻译：在HVPE中形成原位前置GaN沉积层的方法
公开(公告)号：US20100279020A1
公开(公告)日：2010-11-04
申请号：US12770306
申请日：2010-04-29
申请人： Yuriy Melnik , Hidehiro Kojiri , Olga Kryliouk , Tetsuya Ishikawa
发明人： Yuriy Melnik , Hidehiro Kojiri , Olga Kryliouk , Tetsuya Ishikawa
IPC分类号： B05D1/36
CPC分类号： C23C16/4488 , C23C16/303 , C23C16/45523 , C30B25/02 , C30B29/403
摘要： A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
摘要翻译：提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。元素卤素气体，卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。可以是过渡层的缓冲层可以结合多于一个III族金属，并且可以以无定形或结晶形态沉积。非晶层可以通过热处理部分或完全重结晶。代替层，可以形成多个离散的成核位点，其尺寸，密度和分布可以被控制。氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。

25. 发明申请

US20080314317A1 SHOWERHEAD DESIGN WITH PRECURSOR PRE-MIXING 审中-公开
标题翻译：具有前置预混装置的淋浴设计
公开(公告)号：US20080314317A1
公开(公告)日：2008-12-25
申请号：US11925630
申请日：2007-10-26
申请人： BRIAN H. BURROWS , Olga Kryliouk , Yuriy Melnik , Jacob Grayson , Sandeep Nijhawan , Ronald Stevens , Sumedh Acharya
发明人： BRIAN H. BURROWS , Olga Kryliouk , Yuriy Melnik , Jacob Grayson , Sandeep Nijhawan , Ronald Stevens , Sumedh Acharya
IPC分类号： C23C16/455 , G05D23/00
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/02 , C30B25/14 , C30B29/403 , G05D23/22 , G05D23/27
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

26. 发明授权

US08568529B2 HVPE chamber hardware 有权
标题翻译： HVPE室硬件
公开(公告)号：US08568529B2
公开(公告)日：2013-10-29
申请号：US12637019
申请日：2009-12-14
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： C30B21/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，而在室壁上很少或没有沉积。

27. 发明授权

US08491720B2 HVPE precursor source hardware 有权
标题翻译： HVPE前驱源硬件
公开(公告)号：US08491720B2
公开(公告)日：2013-07-23
申请号：US12637028
申请日：2009-12-14
申请人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Tetsuya Ishikawa , David H. Quach , Anzhong Chang , Olga Kryliouk , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C22/02
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

28. 发明申请

US20120295418A1 METHODS FOR IMPROVED GROWTH OF GROUP III NITRIDE BUFFER LAYERS 有权
标题翻译：改善III组氮化物缓冲层生长的方法
公开(公告)号：US20120295418A1
公开(公告)日：2012-11-22
申请号：US13469050
申请日：2012-05-10
申请人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
发明人： Yuriy Melnik , Lu Chen , Hidehiro Kojiri
IPC分类号： H01L21/205
CPC分类号： H01L21/02304 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/872
摘要： Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).
摘要翻译：公开了用于生长具有先进的多缓冲层技术的高结晶质量III族氮化物外延层的方法。在一个实施例中，一种方法包括在氢化物气相外延处理系统的处理室中形成在合适的衬底上含有铝的III族氮化物缓冲层。在沉积缓冲层期间，卤化氢或卤素气体流入生长区以抑制均匀的颗粒形成。可以使用含有铝的低温缓冲液（例如AlN，AlGaN）和含有铝的高温缓冲液（例如AlN，AlGaN）的一些组合来改善随后生长的III族氮化物外延层的晶体质量和形态。缓冲液可以沉积在衬底上，或者沉积在另一缓冲液的表面上。附加的缓冲层可以作为III族氮化物层（例如，GaN，AlGaN，AlN）中的中间层添加。

29. 发明授权

US08138069B2 Substrate pretreatment for subsequent high temperature group III depositions 失效
标题翻译：用于后续高温组III沉积的底物预处理
公开(公告)号：US08138069B2
公开(公告)日：2012-03-20
申请号：US12766779
申请日：2010-04-23
申请人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
发明人： Yuriy Melnik , Olga Kryliouk , Hidehiro Kojiri , Tetsuya Ishikawa
IPC分类号： H01L21/20
CPC分类号： H01L21/02658 , C23C16/0272 , C23C16/301 , C30B25/186 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/0254
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH3) and a halogen gas.
摘要翻译：本发明的实施例涉及用于制造诸如发光二极管（LED）或激光二极管（LD）的器件的衬底的预处理的设备和方法。本发明的一个实施方案包括通过将含氧化铝的衬底的表面暴露于预处理气体混合物来预处理含氧化铝的衬底，其中预处理气体混合物包含氨（NH 3）和卤素气体。

30. 发明授权

US08080466B2 Method for growth of nitrogen face (N-face) polarity compound nitride semiconductor device with integrated processing system 有权
标题翻译：具有集成处理系统的氮面（N面）极性复合氮化物半导体器件生长方法
公开(公告)号：US08080466B2
公开(公告)日：2011-12-20
申请号：US12853409
申请日：2010-08-10
申请人： Jie Su , Olga Kryliouk , Yuriy Melnik
发明人： Jie Su , Olga Kryliouk , Yuriy Melnik
IPC分类号： H01L21/36
CPC分类号： H01L21/02516 , C23C16/303 , C23C16/4411 , C23C16/4488 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/45574 , C23C16/54 , C30B25/02 , C30B29/406 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/16
摘要： Embodiments described herein generally relate to apparatus and methods for forming Group III-V materials by metal-organic chemical vapor deposition (MOCVD) processes and hydride vapor phase epitaxial (HVPE) processes. In one embodiment, a method for fabricating a nitrogen-face (N-face) polarity compound nitride semiconductor device is provided. The method comprises depositing a nitrogen containing buffer layer having N-face polarity over one or more substrates using a metal organic chemical vapor deposition (MOCVD) process to form one or more substrates having N-face polarity and depositing a gallium nitride (GaN) layer over the nitrogen containing buffer layer using a hydride vapor phase epitaxial (HVPE) deposition process, wherein the nitrogen containing buffer layer and the GaN layer are formed without breaking vacuum and exposing the one or more substrates to atmosphere.
摘要翻译：本文描述的实施方案通常涉及通过金属 - 有机化学气相沉积（MOCVD）工艺和氢化物气相外延（HVPE）工艺形成III-V族材料的装置和方法。在一个实施例中，提供了一种用于制造氮 - 面（N面）极性复合氮化物半导体器件的方法。该方法包括使用金属有机化学气相沉积（MOCVD）工艺在一个或多个衬底上沉积具有N面极性的含氮缓冲层，以形成具有N面极性的一个或多个衬底并沉积氮化镓（GaN）层使用氢化物气相外延（HVPE）沉积工艺在含氮缓冲层上方，其中形成含氮缓冲层和GaN层，而不破坏真空并将一个或多个衬底暴露于大气中。

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