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21. 发明授权

US5541454A Semiconductor device containing electrostatic capacitive element and method for manufacturing same 失效
标题翻译：含有静电电容元件的半导体器件及其制造方法
公开(公告)号：US5541454A
公开(公告)日：1996-07-30
申请号：US478115
申请日：1995-06-07
申请人： Shunsuke Inoue , Yukihiko Sakashita , Yoshio Nakamura , Shin Kikuchi , Hiroshi Yuzurihara
发明人： Shunsuke Inoue , Yukihiko Sakashita , Yoshio Nakamura , Shin Kikuchi , Hiroshi Yuzurihara
IPC分类号： H01L27/108 , H01L23/48 , H01L23/52
CPC分类号： H01L27/10829 , H01L2924/0002
摘要： A semiconductor device comprises a capacitor consisting of an Al region formed on a semiconductor substrate, an Al oxide film formed on a surface of said Al region, and electrodes opposed to said Al region with interposition of said Al oxide film.
摘要翻译：半导体器件包括由在半导体衬底上形成的Al区域，形成在所述Al区域的表面上的Al氧化物膜和与所述Al区域相对的电极组成的电容器，插入所述Al氧化物膜。

22. 发明授权

US5530266A Liquid crystal image display unit and method for fabricating semiconductor optical member 失效
标题翻译：液晶图像显示单元及制造半导体光学元件的方法
公开(公告)号：US5530266A
公开(公告)日：1996-06-25
申请号：US242047
申请日：1994-05-13
申请人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
发明人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
IPC分类号： G02F1/1362 , H01L27/12 , H01L27/092 , H01L27/105
CPC分类号： G02F1/13454 , H01L27/12 , H01L27/1203 , H01L27/1233 , G02F2001/136281 , G02F2202/105 , Y10S438/96
摘要： A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.
摘要翻译：在对可见光区域的光不透明的基板上形成的液晶图像显示单元，其特征在于，除去所述基板上的液晶像素部下方的部分，使得所述光透过所述液晶像素部分。

23. 发明授权

US5468344A Method for manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5468344A
公开(公告)日：1995-11-21
申请号：US186541
申请日：1994-01-26
申请人： Shunsuke Inoue , Junichi Hoshi , Takanori Watanabe
发明人： Shunsuke Inoue , Junichi Hoshi , Takanori Watanabe
IPC分类号： H01L21/265 , H01L21/00 , H01L21/683 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/78 , H01L29/786 , H01L21/306 , B44C1/22 , C03C15/00
CPC分类号： H01L21/6708 , H01L21/6838
摘要： The present invention is directed to a method for manufacturing semiconductor devices including a process of etching a member for use in making a semiconductor device. An improvement resides in a process for holding the member, using holding means which is placed into contact with the peripheries of the member, as well as forming a space including one face of the member, and a process for introducing a gas into the space, and blasting the gas from a clearance between the member and the holding means, as well as injecting an etching agent to the member from the opposite face side of the member to etch the other face of the member.
摘要翻译：本发明涉及一种用于制造半导体器件的方法，其包括蚀刻用于制造半导体器件的部件的工艺。改进在于使用与构件的周边接触的保持装置以及形成包括构件的一个面的空间的保持构件的过程以及将气体引入到空间中的过程，并且从构件和保持装置之间的间隙喷射气体，以及从构件的相对面侧向构件注入蚀刻剂以蚀刻构件的另一面。

24. 发明授权

US5412240A Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness 失效
标题翻译：绝缘体上硅CMOS器件和具有受控基极绝缘体厚度的液晶显示器
公开(公告)号：US5412240A
公开(公告)日：1995-05-02
申请号：US274156
申请日：1994-07-14
申请人： Shunsuke Inoue , Toru Koizumi , Mamoru Miyawaki , Shigetoshi Sugawa
发明人： Shunsuke Inoue , Toru Koizumi , Mamoru Miyawaki , Shigetoshi Sugawa
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/208 , H01L21/762 , H01L21/8238 , H01L27/092 , H01L27/12 , H01L29/78 , H01L29/786 , H01L27/01 , H01L27/13
CPC分类号： H01L27/1203
摘要： A semiconductor device has an NMOS transistor and a PMOS transistor formed on at least one monocrystal Si region formed in a thin-film Si layer formed on an insulation layer. The thickness T.sub.BOX of the insulation layer on which the NMOS and PMOS transistors are formed, the voltage V.sub.SS of a low-voltage power supply and the voltage V.sub.DD of a high-voltage power supply for the NMOS and PMOS transistors satisfy a relationship expressed by the following equation:T.sub.BOX >(V.sub.DD -V.sub.SS -K.sub.2)/K.sub.1where K.sub.1 .tbd..epsilon..sub.BOX (Q.sub.BN +Q.sub.BP), K.sub.2 .tbd.2.PHI..sub.FN +2.PHI..sub.FP -1.03, .epsilon..sub.BOX.sup.-1 is the dielectric constant of the base insulation layer, Q.sub.BN and Q.sub.BP are bulk charges when the widths of depletion layers of the NMOS and PMOS transistors are maximized, and .PHI..sub.FN and .PHI..sub.FP are pseudo Fermi potentials of the NMOS and PMOS transistors.
摘要翻译：半导体器件具有形成在形成在绝缘层上的薄膜Si层中形成的至少一个单晶Si区上的NMOS晶体管和PMOS晶体管。形成NMOS和PMOS晶体管的绝缘层的厚度TBOX，低压电源的电压VSS和NMOS和PMOS晶体管的高压电源的电压VDD满足由以下等式：TBOX>（VDD-VSS-K2）/ K1其中K1 3BONDεBOX（QBN + QBP），K2 3BOND 2 PHI FN + 2 PHI FP-1.03，εBOX-1是基础绝缘层的介电常数当NMOS和PMOS晶体管的耗尽层的宽度最大化时，QBN和QBP是体电荷，而PHI FN和PHI FP是NMOS和PMOS晶体管的伪费米电位。

25. 发明申请

US20100157124A1 SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA 有权
标题翻译：固态图像拾取器和摄像机
公开(公告)号：US20100157124A1
公开(公告)日：2010-06-24
申请号：US12718257
申请日：2010-03-05
申请人： Shunsuke Inoue , Shin Kikuchi
发明人： Shunsuke Inoue , Shin Kikuchi
IPC分类号： H04N5/335
CPC分类号： H04N5/378 , H04N5/343 , H04N5/347
摘要： In a solid-state image pickup device which has means of adding signals from a plurality of pixels, the present invention achieves a high S/N, and achieves a solid-state image pickup device suitable for both of static image pickup and moving image pickup. The solid-state image pickup device is a solid-state image pickup device which has a pixel unit has a plurality of pixels which are arranged two-dimensionally and output pixel signals derived by a photoelectric conversion, and is provided with a first mode of reading a pixel signal every pixel, and a second mode of adding and reading a plurality of pixel signals, having a variable gain column amplifier for performing readout at different gains in the first mode and second mode. The solid-state image pickup device has a plurality of output lines where output signals from a plurality of pixels arranged in one line are outputted respectively, and at least one of the variable gain amplifier is connected to each of the plurality of output lines. A gain at the time of readout in the second mode is made to be higher than a gain at the time of readout in the first mode.
摘要翻译：在具有从多个像素添加信号的装置的固体摄像装置中，本发明实现了高S / N，并且实现了适用于静态图像拾取和运动图像拾取两者的固态图像拾取装置。固体摄像装置是固体摄像装置，其具有像素单元，具有二维排列的多个像素，并输出通过光电转换得到的像素信号，并具有第一读取模式每个像素的像素信号，以及添加和读取多个像素信号的第二模式，具有用于在第一模式和第二模式中以不同增益执行读出的可变增益列放大器。固态摄像装置具有分别输出来自一行排列的多个像素的输出信号的多条输出线，并且可变增益放大器中的至少一方与多条输出线连接。使得在第二模式中的读出时的增益高于在第一模式下的读出时的增益。

26. 发明授权

US07626620B2 Photoelectric conversion unit stacked structure 失效
标题翻译：光电转换单元堆叠结构
公开(公告)号：US07626620B2
公开(公告)日：2009-12-01
申请号：US11624789
申请日：2007-01-19
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H04N3/14
CPC分类号： H01L27/14647 , H01L27/14609
摘要： In a photoelectric conversion device having a plurality of pixel circuits, a read transistor, a main electrode of which is connected to a charge accumulation node of a photoelectric conversion unit in each pixel circuit is operated in a pentode region, so as to read out a photoelectric conversion signal of each diode to a floating diffusion.
摘要翻译：在具有多个像素电路的光电转换装置中，在每个像素电路中与主电极连接到光电转换单元的电荷累积节点的读取晶体管在五极管区域中被操作，以便读出一个每个二极管的光电转换信号到浮动扩散。

27. 发明申请

US20090050945A1 SOLID-STATE IMAGE SENSING DEVICE 有权
标题翻译：固态图像传感装置
公开(公告)号：US20090050945A1
公开(公告)日：2009-02-26
申请号：US12259350
申请日：2008-10-28
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H01L31/00
CPC分类号： H01L27/14612 , H01L27/14623
摘要： A solid-state image sensing device has a pixel that includes a photodiode that generates an electrical charge according to an amount of incoming light, a floating diffusion portion, a charge transfer transistor that transfers the electrical charge to the floating diffusion portion from the photoelectric conversion portion, a reading circuit that outputs an signal on the basis of said electrical charge held in said floating diffusion portion, and a light-shielding member disposed so as to cover a side wall of a gate electrode of the charge transfer transistor on the photoelectric conversion portion side.
摘要翻译：固态摄像装置具有像素，该像素包括根据入射光量产生电荷的光电二极管，浮动扩散部分，电荷转移晶体管，其将电荷从光电转换传递到浮动扩散部分基于保持在所述浮动扩散部分中的所述电荷输出信号的读取电路和设置成在光电转换上覆盖电荷转移晶体管的栅电极的侧壁的遮光部件部分侧。

28. 发明申请

US20070120991A1 PHOTOELECTRIC CONVERSION DEVICE AND GATE VOLTAGE CONTROL METHOD 失效
标题翻译：光电转换装置和门电压控制方法
公开(公告)号：US20070120991A1
公开(公告)日：2007-05-31
申请号：US11624789
申请日：2007-01-19
申请人： Shunsuke Inoue
发明人： Shunsuke Inoue
IPC分类号： H04N5/335
CPC分类号： H01L27/14647 , H01L27/14609
摘要： In a photoelectric conversion device having a plurality of pixel circuits, a read transistor, a main electrode of which is connected to a charge accumulation node of a photoelectric conversion unit in each pixel circuit is operated in a pentode region, so as to read out a photoelectric conversion signal of each diode to a floating diffusion.
摘要翻译：在具有多个像素电路的光电转换装置中，在每个像素电路中与主电极连接到光电转换单元的电荷累积节点的读取晶体管在五极管区域中被操作，以便读出一个每个二极管的光电转换信号到浮动扩散。

29. 发明申请

US20060124977A1 Solid-state image sensing device and camera system using the same 失效
公开(公告)号：US20060124977A1
公开(公告)日：2006-06-15
申请号：US11316868
申请日：2005-12-27
申请人： Mahito Shinohara , Shunsuke Inoue
发明人： Mahito Shinohara , Shunsuke Inoue
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L27/14654 , H01L27/14656
摘要： A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a first-conductivity-type semiconductor region and a second-conductivity-type semiconductor region. The first and second conductivity types are opposite to each other. The first transistor has a first-conductivity-type drain region formed in the second-conductivity-type semiconductor region to transfer signal charge to the drain region. The second transistor has a source region and a drain region which are formed in the second-conductivity-type semiconductor region and which have the first conductivity type. At least one second-conductivity-type potential barrier is provided under the drain region of the first transistor and the source region and/or the drain region of the second transistor.

30. 发明申请

US20050270395A1 Image pickup apparatus 失效
标题翻译：摄像设备
公开(公告)号：US20050270395A1
公开(公告)日：2005-12-08
申请号：US11198232
申请日：2005-08-08
申请人： Tomoya Yoneda , Shunsuke Inoue , Tetsunobu Kochi , Hidekazu Takahashi , Masanori Ogura
发明人： Tomoya Yoneda , Shunsuke Inoue , Tetsunobu Kochi , Hidekazu Takahashi , Masanori Ogura
IPC分类号： H04N5/335 , H04N3/15 , H04N9/04
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14625 , H01L27/14645 , H04N5/3415 , H04N9/045 , H04N2209/048
摘要： An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.
摘要翻译：提供了一种图像拾取装置，其包括形成在相同的半导体芯片上且沿水平和垂直方向布置的多个图像拾取区域，每个图像拾取区域具有沿水平和垂直方向布置的多个像素，多个垂直扫描电路，其顺序地扫描垂直方向上的像素，以在垂直方向上彼此独立地扫描多个摄像区域;多个透镜，其中至少一个设置在多个图像拾取器区域，其聚焦光以在图像拾取区域上形成图像;以及驱动电路，其驱动多个垂直扫描电路，使得多个垂直扫描电路中的每一个的扫描周期的至少一部分彼此重叠。

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