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21. 发明申请

US20060113635A1 Semiconductor member, manufacturing method thereof, and semiconductor device 失效
标题翻译：半导体元件及其制造方法以及半导体器件
公开(公告)号：US20060113635A1
公开(公告)日：2006-06-01
申请号：US10540261
申请日：2004-12-14
申请人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
发明人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
IPC分类号： H01L21/20 , H01L31/117
CPC分类号： H01L29/78687 , H01L21/02381 , H01L21/0245 , H01L21/02455 , H01L21/02502 , H01L21/02513 , H01L21/0262 , H01L21/76259 , H01L29/1054
摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.
摘要翻译： SiGe层生长在硅衬底上。 SiGe层或硅衬底和SiGe层通过对SiGe层进行阳极氧化以形成应变感应多孔层或多孔硅层和应变感应多孔层而被开孔化。在所得结构上形成SiGe层和应变硅层。层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。因此，可以形成具有低缺陷密度和高浓度的SiGe层。由于应变感应多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。可以获得具有高应变硅层的高质量半导体衬底。

22. 发明申请

US20050066881A1 Continuous production method for crystalline silicon and production apparatus for the same 审中-公开
标题翻译：晶体硅的连续生产方法及其制造装置
公开(公告)号：US20050066881A1
公开(公告)日：2005-03-31
申请号：US10938509
申请日：2004-09-13
申请人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida
发明人： Katsumi Nakagawa , Shunichi Ishihara , Hiroshi Sato , Shoji Nishida
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： H01L31/182 , C30B28/08 , C30B28/10 , C30B29/06 , Y02E10/546 , Y02P70/521 , Y10T117/1032 , Y10T117/1056
摘要： Provided is a continuous production method for crystalline silicon, including: retaining melted silicon in a crucible; solidifying a portion close to a surface of raw material silicon by providing a negative temperature gradient upward from the crucible; holding the solidified crystalline silicon by a pulling means; and pulling the solidified crystalline silicon at a predetermined rate, while shaping a sectional shape of the solidified crystalline silicon by bringing the solidified crystalline silicon in contact with an opened heater when the solidified crystalline silicon passes through an opening portion of the opened heater having an opening of a predetermined shape and maintained at a temperature higher than a melting point of the raw material silicon. The method allows continuous production of a crystalline silicon ingot having uniform crystallinity or impurity concentration and high quality at low cost even when low purity raw material silicon such as metallurgical grade silicon is used.
摘要翻译：提供了一种用于结晶硅的连续生产方法，包括：将熔融的硅保持在坩埚中; 通过从坩埚向上提供负温度梯度来固化靠近原料硅表面的部分; 通过牵引装置保持凝固的晶体硅; 并以预定的速率拉动固化的结晶硅，同时当固化的结晶硅通过具有开口的开放式加热器的开口部分时，通过使固化的结晶硅与开放的加热器接触来成形固化的结晶硅的截面形状并且保持在比原料硅的熔点高的温度。该方法即使在使用低纯度原料硅如冶金级硅时，也能以低成本连续生产具有均匀结晶度或杂质浓度和高质量的结晶硅锭。

23. 发明授权

US06872248B2 Liquid-phase growth process and liquid-phase growth apparatus 失效
标题翻译：液相生长过程和液相生长装置
公开(公告)号：US06872248B2
公开(公告)日：2005-03-29
申请号：US10400636
申请日：2003-03-28
申请人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
发明人： Masaki Mizutani , Katsumi Nakagawa , Tetsuro Saito , Tatsumi Shoji , Takehito Yoshino , Shoji Nishida
IPC分类号： C30B19/06 , C30B29/06 , H01L21/208 , C30B19/04 , C30B19/10
CPC分类号： C30B19/068 , C30B19/062 , Y10T117/10 , Y10T117/1024
摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.
摘要翻译：一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。适用于实施所述液相生长过程的液相生长装置。

24. 发明授权

US06387780B1 Fabrication process of solar cell 失效
公开(公告)号：US06387780B1
公开(公告)日：2002-05-14
申请号：US08932708
申请日：1997-09-18
申请人： Shoji Nishida
发明人： Shoji Nishida
IPC分类号： H01L2100
CPC分类号： H01L31/1804 , H01L31/068 , Y02E10/547 , Y02P70/521 , Y10S438/955
摘要： Metal-grade silicon is melted and solidified in a mold to form a plate-shaped silicon layer and a crystalline silicon layer is made thereon, thereby providing a cheap solar cell without a need for a slicing step.

25. 发明授权

US5279686A Solar cell and method for producing the same 失效
标题翻译：太阳能电池及其制造方法
公开(公告)号：US5279686A
公开(公告)日：1994-01-18
申请号：US837976
申请日：1992-02-20
申请人： Shoji Nishida
发明人： Shoji Nishida
IPC分类号： H01L21/20 , H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L21/02381 , H01L21/02425 , H01L21/02532 , H01L21/0262 , H01L21/02639 , Y02E10/546 , Y02P70/521
摘要： There is disclosed a polycrystalline silicon solar cell, utilizing a continuous polycrystalline silicon film consisting of single crystals grown from a plurality of small nucleation surfaces provided on a non-nucleation surface. The semiconductor junction, providing the photoelectromotive force of the solar cell, is formed on the single crystals, avoiding the areas of grain boundaries formed by mutual contact of the single crystals, in order to eliminate the drawbacks resulting from such boundaries. The semiconductor junction is formed by masking the areas of the grain boundaries with a suitable masking material, such as photoresist.
摘要翻译：公开了一种多晶硅太阳能电池，其利用由设置在非成核表面上的多个小成核面生长的单晶构成的连续多晶硅膜。提供太阳能电池的光电动势的半导体结形成在单晶上，避免了由单晶相互接触而形成的晶界的区域，以消除由这种边界产生的缺陷。通过用合适的掩模材料（例如光致抗蚀剂）掩蔽晶界的区域来形成半导体结。

26. 发明授权

US5269852A Crystalline solar cell and method for producing the same 失效
标题翻译：结晶太阳能电池及其制造方法
公开(公告)号：US5269852A
公开(公告)日：1993-12-14
申请号：US887821
申请日：1992-05-26
申请人： Shoji Nishida
发明人： Shoji Nishida
IPC分类号： H01L27/142 , H01L31/0368 , H01L31/18 , H01L31/0392 , H01L31/06
CPC分类号： H01L31/03682 , H01L31/0475 , H01L31/1804 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A crystalline solar cell is formed by growing single crystals on respective plural nucleation areas provided on a non-nucleation surface in such a manner that the neighboring single crystals do not have a crystal grain boundary therebetween. The solar cell comprises an insulation layer having an aperture formed on each of said single crystals. A semiconductor junction is formed at each single crystal at the respective aperture.
摘要翻译：通过在设置在非成核面上的相应的多个成核区域上生长单晶以使得相邻的单晶在其之间不具有晶界的方式形成晶体太阳能电池。太阳能电池包括在每个所述单晶上形成有孔的绝缘层。在相应孔径的每个单晶处形成半导体结。

27. 发明授权

US5254481A Polycrystalline solar cell manufacturing method 失效
标题翻译：多晶太阳能电池制造方法
公开(公告)号：US5254481A
公开(公告)日：1993-10-19
申请号：US794462
申请日：1991-11-19
申请人： Shoji Nishida
发明人： Shoji Nishida
IPC分类号： H01L21/205 , C30B25/18 , H01L31/0368 , H01L31/04 , H01L31/062 , H01L31/072 , H01L31/075 , H01L31/18
CPC分类号： H01L31/0745 , C30B25/18 , H01L31/03682 , H01L31/062 , H01L31/077 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell has a polycrystalline silicon layer formed on a metal substrate. The crystal orientation of the crystal grains of the silicon layer is regulated in the film thickness direction.
摘要翻译：太阳能电池具有在金属基板上形成的多晶硅层。硅层的晶粒的晶体取向在膜厚度方向上被调整。

28. 发明授权

US5002796A Process for forming functional zinc oxide films using alkyl zinc compound and oxygen-containing gas 失效
标题翻译：使用烷基锌化合物和含氧气体形成功能性氧化锌膜的方法
公开(公告)号：US5002796A
公开(公告)日：1991-03-26
申请号：US354716
申请日：1989-05-22
申请人： Shoji Nishida
发明人： Shoji Nishida
IPC分类号： C23C16/18 , C23C16/40 , C23C16/50 , C23C16/511 , G02F1/1343 , H01B1/08 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/18
CPC分类号： H01L31/1884 , C23C16/407 , G02F1/13439 , H01B1/08 , H01L31/075 , Y02B10/10 , Y02E10/548
摘要： A functional zinc oxide deposited thin film having high light permeability and low resistivity can be obtained at a low temperature of about 200.degree. C. on an inexpensive substrate such as glass by a method of activating a starting material gas by means of activation energy, in a space different from a film-forming space thereby forming a precursor contributing to the formation of a deposited film, activating a starting material gas in a space different from the film-forming space and the space just-mentioned above by means of activation energy thereby forming an active species that chemically reacts with the precursor, and introducing the precursor and the active species into the film-forming space, thereby depositing a film, wherein the starting material gas for forming the precursor is an alkyl zinc compound and the starting material for forming the active species is an oxygen gas or an ozone gas. This enables mass production of photovoltaic devices at high efficiency using a PN junction or PIN junction or high performance flat display device using liquid crystals, by which practical provision of power sources for domestic equipments or power sources for electric power appliance or large area display device can be obtained at a reduced cost.
摘要翻译：通过活化能活化起始原料气体的方法，可以在廉价的基板如玻璃上，在约200℃的低温下获得具有高透光性和低电阻率的功能氧化锌沉积薄膜，与成膜空间不同的空间，从而形成有助于形成沉积膜的前体，借助于活化能在与成膜空间不同的空间和上述空间中活化原料气体，从而形成与前体发生化学反应的活性物质，并将前体和活性物质引入成膜空间，从而沉积膜，其中用于形成前体的起始原料气体是烷基锌化合物和用于形成活性物质是氧气或臭氧气体。这使得可以使用PN结或PIN结或使用液晶的高性能平面显示装置高效率地批量生产光电器件，通过该实施例，用于家用设备或用于电力设备或大面积显示装置的电源的电源的实际供应可以以较低的成本获得。

29. 发明授权

US08344607B2 Electron-emitting device and display panel including the same 失效
标题翻译：电子发射器件和包括其的显示面板
公开(公告)号：US08344607B2
公开(公告)日：2013-01-01
申请号：US12627893
申请日：2009-11-30
申请人： Naofumi Aoki , Shoji Nishida
发明人： Naofumi Aoki , Shoji Nishida
IPC分类号： H01J1/00 , H01J19/06
CPC分类号： H01J1/3044 , H01J1/304 , H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30446 , H01J2201/30492 , H01J2201/30496 , H01J2329/0439 , H01J2329/0471 , H01J2329/0473
摘要： An electron-emitting device includes an electroconductive member and a lanthanum boride layer on the electroconductive member and further includes an oxide layer between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. The lanthanum boride layer can be overlaid with a lanthanum oxide layer.
摘要翻译：电子发射器件包括在导电元件上的导电元件和硼化镧层，并且还包括在导电元件和硼化镧层之间的氧化物层。氧化物层可以含有镧元素。硼化镧层可以覆盖有氧化镧层。

30. 发明申请

US20060194417A1 Polycrystalline sillicon substrate 审中-公开
标题翻译：多晶硅衬底
公开(公告)号：US20060194417A1
公开(公告)日：2006-08-31
申请号：US10530189
申请日：2003-10-10
申请人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
发明人： Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki , Masaki Mizutani
IPC分类号： H01L31/0376 , H01L21/20
CPC分类号： C30B29/06 , C30B11/00 , H01L31/182 , Y02E10/546 , Y02P70/521
摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.
摘要翻译：一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

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