会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 29. 发明授权
    • Active matrix substrate and manufacturing method of the same
    • 有源矩阵基板及其制造方法相同
    • US5818549A
    • 1998-10-06
    • US810385
    • 1997-03-03
    • Yuko MaruyamaYuzuru Kanemori
    • Yuko MaruyamaYuzuru Kanemori
    • G02F1/1343G02F1/136G02F1/1362G02F1/1368H01L27/12H01L29/786H01L29/04H01L31/036
    • G02F1/136204H01L27/12
    • First and second gate insulating films, a semiconductor layer made of a-Si(i), and an etching stopper layer are formed to cover a gate electrode on a glass substrate. A drain electrode side contact layer and a source electrode side contact layer are made out of a-Si(n.sup.+) in such a manner to be cut off on the etching stopper layer. A disconnection preventing a-Si(n.sup.+) wire is formed below a source wire in its longitudinal direction, and atop of which a pixel electrode is formed. Since the disconnection preventing a-Si(n.sup.+) wire and source electrode side contact layer are spaced apart, static-induced characteristics deterioration of TFT and the point and line defects during the substrate fabrication sequence can be eliminated and the non-defective ratio of the display device can be improved drastically.
    • 形成第一和第二栅极绝缘膜,由a-Si(i)制成的半导体层和蚀刻停止层,以覆盖玻璃基板上的栅电极。 漏电极侧接触层和源电极侧接触层由蚀刻停止层上切断的a-Si(n +)制成。 在源极线的长度方向的下方形成防止a-Si(n +)线的断线,其顶面形成有像素电极。 由于防止a-Si(n +)线和源电极侧接触层的断开被间隔开,所以可以消除TFT的静电诱导特性劣化以及衬底制造顺序期间的点和线缺陷,并且可以消除 显示设备可以大幅提升。