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21. 发明申请

US20120009761A1 METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE 失效
标题翻译：制造碳化硅基板的方法
公开(公告)号：US20120009761A1
公开(公告)日：2012-01-12
申请号：US13256991
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： C30B29/36 , C30B33/06
摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
摘要翻译：制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。表面层至少部分去除。在该去除步骤之后，背面和主表面彼此连接。

22. 发明申请

US20070007542A1 White-Light Emitting Device 审中-公开
标题翻译：白光发射装置
公开(公告)号：US20070007542A1
公开(公告)日：2007-01-11
申请号：US11160761
申请日：2005-07-07
申请人： Shinsuke Fujiwara
发明人： Shinsuke Fujiwara
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , H01L33/644 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/16195 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： High-output white light emitting devices that, being unsusceptible to deterioration despite large drive power, are usable in lighting applications. The light-emitting devices are formed by combining a phosphor component (4) with an LED (2, 3). The phosphorescent component (4) is selected from materials in which the relation between thermal conductivity λ (W/cmK) and absorption coefficient α (1/cm) with respect to light from the LED (2,3) is λα >2, and the substrate (2) utilized for the LED is selected from SiC, GaN or AIN, with LED and phosphorescent component (4) being disposed in contact. Alternatively, the substrate (2) utilized for the LED is sapphire, and the phosphorescent component (4) is disposed in contact with the substrate side of the LED. Allowing heat to be dissipated sufficiently even with input power being 200 W/cm2 or more, a configuration of this sort can be used free from the influences of temperature.
摘要翻译：尽管大的驱动功率，尽管不易察觉，高输出白光发射装置可用于照明应用中。发光装置通过将荧光体组分（4）与LED（2,3）组合而形成。磷光组分（4）选自其中相对于来自LED（2,3）的光的热导率λ（W / cmK）和吸收系数α（1 / cm）之间的关系为λalpha> 2的材料，以及用于LED的衬底（2）选自SiC，GaN或AlN，其中LED和磷光组分（4）被设置成接触。或者，用于LED的基板（2）是蓝宝石，并且磷光部件（4）设置成与LED的基板侧接触。即使在输入功率为200W / cm 2以上的情况下，也能够充分散热，因此可以不受温度的影响而使用这种结构。

23. 发明申请

US20060003134A1 AlxGayIn1-x-yN substrate, cleaning method of AlxGayIn1-x-yN substrate, AIN substrate, and cleaning method of AIN substrate 有权
标题翻译： AlxGayIn1-x-yN基板，AlxGayIn1-x-yN基板的清洗方法，AIN基板和AIN基板的清洗方法
公开(公告)号：US20060003134A1
公开(公告)日：2006-01-05
申请号：US11148239
申请日：2005-06-09
申请人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Tomoki Uemura , Keiji Ishibashi , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： B32B9/00
CPC分类号： C30B33/00 , Y10T428/21
摘要： An AlxGayIn1-x-yN substrate in which particles having a grain size of at least 0.2 μm on a surface of the AlxGayIn1-x-yN substrate are at most 20 in number when a diameter of the AlxGayIn1-x-yN substrate is two inches, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Further, an AlxGayIn1-x-yN substrate in which, in a photoelectron spectrum of a surface of the AlxGayIn1-x-yN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of C1s electrons and a peak area of N1s electrons (C1s electron peak area/N1s electron peak area) is at most 3, and a cleaning method with which the AlxGayIn1-x-yN substrate can be obtained are provided. Still further, an AlN substrate in which, in a photoelectron spectrum of a surface of the AlN substrate by X-ray photoelectron spectroscopy with a detection angle of 10°, a ratio between a peak area of Al2s electrons and a peak area of N1s electrons (Al2s electron peak area/N1s electron peak area) is at most 0.65 and a cleaning method with which the AlN substrate can be obtained are provided.
摘要翻译：在其中Al的表面上具有至少0.2μm的晶粒尺寸的颗粒的Al x N y N y N y 在1-xy N衬底中，当Al x N 2的直径为至多20个数量时，在1-xy N衬底中的Ga 2 y是两英寸，并且其中Al x Ga y Y y >可以获得在1-xy N衬底中。此外，在Al-N-N基底中，在Al 2 O 3的表面的光电子光谱中，通过X射线光电子能谱检测角度为10°，在1-xy N衬底中，峰面积C < SUB> 1s电子和N 1s电子的峰面积（C 1s电子峰面积/ N 1s电子峰面积）至多为3，并且可以获得可以获得Al x N y Na y In 1-xy N衬底的清洁方法。此外，AlN基板，其中，通过X射线光电子能谱法测定AlN基板的表面的光电子光谱，检测角度为10°，Al 2基板的峰面积电子和N 1s电子的峰面积（Al 2 S 3电子峰面积/ N 1s电子峰面积）为0.65以下，清洗提供了可以获得AlN衬底的方法。

24. 发明申请

US20050062054A1 Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20050062054A1
公开(公告)日：2005-03-24
申请号：US10829306
申请日：2004-04-20
申请人： Shinsuke Fujiwara , Takao Nakamura , Hiroki Mori , Koji Katayama
发明人： Shinsuke Fujiwara , Takao Nakamura , Hiroki Mori , Koji Katayama
IPC分类号： H01L33/06 , H01L33/28 , H01L33/00
CPC分类号： H01L33/28 , H01L33/06 , H01S5/327
摘要： A ZnSe based light emitting device enabling longer lifetime is provided. The light emitting device is formed on a compound semiconductor, includes an active layer positioned between an n-type ZnMgSSe cladding layer and a p-type ZnMgSSe cladding layer, and has a barrier layer having a band gap larger than that of the p-type ZnMgSSe cladding layer, provided between the active layer and the p-type ZnMgSSe cladding layer.
摘要翻译：提供了一种能延长使用寿命的基于ZnSe的发光器件。发光器件形成在化合物半导体上，包括位于n型ZnMgSSe覆层和p型ZnMgSSe覆层之间的有源层，并且具有比p型的带隙大的带隙的阻挡层 ZnMgSSe包层，设置在有源层和p型ZnMgSSe覆层之间。

25. 发明授权

US6132506A Method for the heat treatment of ZnSe crystal 失效
标题翻译： ZnSe晶体热处理方法
公开(公告)号：US6132506A
公开(公告)日：2000-10-17
申请号：US335763
申请日：1999-06-18
申请人： Ryu Hirota , Shinsuke Fujiwara
发明人： Ryu Hirota , Shinsuke Fujiwara
IPC分类号： C30B29/48 , C30B25/00 , C30B31/18 , C30B33/00 , C30B33/02
CPC分类号： C30B25/00 , C30B29/48 , C30B33/00 , C30B33/02 , Y10T117/1016
摘要： An object of the present invention is to provide a method for the heat treatment of ZnSe crystal whereby the crystal can be prevented from deterioration of crystallinity and caused to have low resistivity without occurrence of precipitates in the crystal. The feature of the present invention consists in a method for the heat treatment of ZnSe comprising subjecting ZnSe crystal grown by a chemical vapor transport method using iodine as a transport agent to a heat treatment in a Zn vapor atmosphere and controlling a cooling rate after the heat treatment in 10 to 200.degree. C./min.
摘要翻译：本发明的目的是提供一种用于热处理ZnSe晶体的方法，由此可以防止晶体的结晶劣化，并且在晶体中不发生析出物而具有低电阻率。本发明的特征在于一种ZnSe的热处理方法，其特征在于，使用碘作为输送剂的化学气相输送法生长的ZnSe晶体在Zn蒸气气氛中进行热处理，并控制加热后的冷却速度治疗10〜200℃/ min。

26. 外观设计

USD421745S Image scanner 失效
公开(公告)号：USD421745S
公开(公告)日：2000-03-21
申请号：US103088
申请日：1999-04-08
申请人： Shinsuke Fujiwara , Satoru Takagi , Makoto Someya , Masakatsu Takizawa
设计人： Shinsuke Fujiwara , Satoru Takagi , Makoto Someya , Masakatsu Takizawa

27. 发明授权

US4930916A Paper feeder 失效
标题翻译：送纸器
公开(公告)号：US4930916A
公开(公告)日：1990-06-05
申请号：US277866
申请日：1988-11-30
申请人： Shinsuke Fujiwara
发明人： Shinsuke Fujiwara
IPC分类号： B41J11/38 , B41J11/24 , B41J13/03
CPC分类号： B41J13/03 , B41J11/24
摘要： A paper feeder roller wherein a motor transfers a driving force to a deceleration gear train. The deceleration gear train transfers this force to the shaft of a paper feeder roller which is rotated thereto. A plate connected to the paper feeder roller is rotatable about an axis so that the rotation of the plate rotates the paper feeder roller in and out of engagement with the deceleration gear train. When the paper feeder roller is disengaged with the deceleration gear train, the paper feeder roller can be rotated manually.
摘要翻译：一种供纸辊，其中电动机将驱动力传递到减速齿轮系。减速齿轮系将该力传递给与其旋转的供纸辊的轴。连接到供纸辊的板可以绕轴线旋转，使得板的旋转使供纸辊旋转与减速齿轮系接合。当供纸辊与减速齿轮系分离时，可以手动旋转供纸辊。

28. 发明授权

US08679955B2 Method for forming epitaxial wafer and method for fabricating semiconductor device 有权
标题翻译：用于形成外延晶片的方法和用于制造半导体器件的方法
公开(公告)号：US08679955B2
公开(公告)日：2014-03-25
申请号：US13202419
申请日：2010-02-10
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
摘要翻译：提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。在步骤S107中，生长AlN缓冲层13。在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量的氢。在时间t7，将H2，TMA和NH3供应到生长反应器10中。

29. 发明授权

US08540817B2 Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer 失效
标题翻译： Si（1-v-w-x）C w Al x N v衬底的制造方法，外延晶片的制造方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片
公开(公告)号：US08540817B2
公开(公告)日：2013-09-24
申请号：US12989015
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C23C14/0617 , C23C14/28 , C30B25/00 , C30B25/02 , C30B28/12 , C30B28/14 , C30B29/36 , C30B29/38 , C30B29/403 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/02617 , Y10T428/24471
摘要： There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0
摘要翻译：提供了具有减少的裂纹数和加工性能降低的Si（1-v-w-x）C w Al x N v衬底的制造方法，外延晶片的制造方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。首先，准备Si基板11。然后在Si衬底上，在低于1℃的温度下生长Si（1-vwx）C w Al x N v层（0

30. 发明授权

US08435866B2 Method for manufacturing silicon carbide substrate 失效
标题翻译：碳化硅基板的制造方法
公开(公告)号：US08435866B2
公开(公告)日：2013-05-07
申请号：US13256991
申请日：2010-09-28
申请人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
发明人： Taro Nishiguchi , Makoto Sasaki , Shin Harada , Kyoko Okita , Hiroki Inoue , Shinsuke Fujiwara , Yasuo Namikawa
IPC分类号： H01L21/306 , H01L21/304
CPC分类号： C30B29/36 , C30B33/06
摘要： At least one single crystal substrate, each having a backside surface and made of silicon carbide, and a supporting portion having a main surface and made of silicon carbide, are prepared. In this preparing step, at least one of the backside surface and main surface is formed by machining. By this forming step, a surface layer having distortion in the crystal structure is formed on at least one of the backside surface and main surface. The surface layer is removed at least partially. Following this removing step, the backside surface and main surface are connected to each other.
摘要翻译：制备至少一个具有背面并由碳化硅制成的单晶基板和具有主表面并由碳化硅制成的支撑部分。在该制备步骤中，通过机械加工形成背面和主表面中的至少一个。通过该形成步骤，在背面和主面中的至少一个上形成有晶体结构变形的表层。表面层至少部分去除。在该去除步骤之后，背面和主表面彼此连接。

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