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21. 发明授权

US07348245B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07348245B2
公开(公告)日：2008-03-25
申请号：US11443257
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L21/8234
CPC分类号： H01L27/11568 , G11C11/005 , G11C16/0466 , H01L27/105 , H01L27/11573 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： Manufacturing method of a semiconductor device for forming a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, including forming a gate insulating film over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the gate electrode associated with each of the first through third field effect transistors. The sidewall spacers of at least the first field effect transistor have a different width than that of at least the second field effect transistor, the gate electrode of the third field effect transistor has a different length than that of at least the first field effect transistor for memory and the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor.
摘要翻译：一种半导体器件的制造方法，用于形成包括用于存储器的第一场效应晶体管的可重写非易失性存储单元，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，包括在半导体衬底上形成栅极绝缘膜栅极绝缘膜上的栅电极和与第一至第三场效应晶体管中的每一个相关联的栅电极的侧壁上的侧壁隔离物。至少第一场效应晶体管的侧壁间隔物具有与至少第二场效应晶体管不同的宽度，第三场效应晶体管的栅电极具有与至少第一场效应晶体管不同的长度，存储器和第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的厚度。

22. 发明申请

US20060214256A1 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060214256A1
公开(公告)日：2006-09-28
申请号：US11443252
申请日：2006-05-31
申请人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
发明人： Masaaki Shinohara , Kozo Watanabe , Fukuo Owada , Takashi Aoyama
IPC分类号： H01L29/00
CPC分类号： H01L27/11568 , H01L27/115
摘要： A semiconductor device having a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, the transistors each including a gate insulating film formed over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the corresponding gate electrode. Sidewall spacers of the first field effect transistor are different from those of at least the second field effect transistors. Also, the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor and the gate electrode of the third field effect transistor has a length different from that of either the first field effect transistor or second field effect transistor. The sidewall spacers of the first field effect transistor include a first silicon oxide film, a first silicon nitride film over the first silicon oxide film and a second silicon oxide film over the first silicon nitride film.
摘要翻译：一种半导体器件，具有可重写非易失性存储单元，其包括用于存储的第一场效应晶体管，包括第二场效应晶体管的电路和包括第三场效应晶体管的电路，所述晶体管包括形成在半导体衬底上的栅极绝缘膜，在栅极绝缘膜上方的栅电极和相应栅电极的侧壁上的侧壁间隔物。第一场效应晶体管的侧壁间隔物与至少第二场效应晶体管的侧壁间隔物不同。此外，第三场效应晶体管的栅极绝缘膜的厚度大于第二场效应晶体管的栅极绝缘膜，第三场效应晶体管的栅电极的长度与第一场效应晶体管或第二场效应晶体管的长度不同效应晶体管。第一场效应晶体管的侧壁间隔物包括第一氧化硅膜，第一氧化硅膜上的第一氮化硅膜和位于第一氮化硅膜上的第二氧化硅膜。

23. 发明授权

US4436849A Aqueous resin composition 失效
标题翻译：水性树脂组合物
公开(公告)号：US4436849A
公开(公告)日：1984-03-13
申请号：US431080
申请日：1982-09-30
申请人： Tetsuo Aihara , Yasuharu Nakayama , Koichi Umeyama , Kozo Sawada , Masaaki Shinohara
发明人： Tetsuo Aihara , Yasuharu Nakayama , Koichi Umeyama , Kozo Sawada , Masaaki Shinohara
IPC分类号： C08F2/26 , C08G63/685 , C09D167/08 , C08L67/08 , C09D3/68
CPC分类号： C08G63/6854 , C09D167/08
摘要： An aqueous resin composition comprising a neutralization product of an isocyanurate group-containing maleinized alkyd resin having an acid value of 5 to 65 in an aqueous medium, said maleinized alkyd resin being prepared by maleinizing an alkyd resin having an acid value of not more than 10 and a hydroxyl value of not more than 10 which is the product of condensation reaction of(A) 20 to 60% by weight of at least one of drying or semi-drying oils and fatty acids,(B) 10 to 45% by weight of at least one tris(hydroxyalkyl) isocyanurate,(C) 0 to 45% by weight of at least one polyhydric alcohol other than the component (B),(D) 10 to 45% by weight of at least one polybasic acid, and(E) 0 to 15% by weight of at least one monobasic acidand an aqueous emulsion resin composition obtained by emulsion polymerization of a radical polymerizable unsaturated monomer in an aqueous medium in the presence of the aforesaid neutralization product. The above aqueous resin compositions can give a coating having excellent corrosion resistance and fast-drying property.
摘要翻译：一种含水树脂组合物，其包含在水性介质中含有酸值为5〜65的含异氰脲酸酯基的马来酸化醇酸树脂的中和产物，所述马来酸化的醇酸树脂通过使酸值不大于10的醇酸树脂和（A）20至60重量％的干燥或半干性油和脂肪酸中的至少一种的缩合反应的产物的羟值为10以下，（B）10〜45重量％的至少一种三（羟烷基）异氰脲酸酯，（C）0至45重量％的除（B）成分以外的至少一种多元醇，（D）10至45重量％的至少一种多元酸，以及（E）0〜15重量％的至少一种一元酸和通过自由基聚合性不饱和单体在水性介质中在上述中和产物的存在下乳液聚合得到的水性乳液树脂组合物。上述水性树脂组合物可以得到具有优异的耐腐蚀性和快干性能的涂层。

24. 发明申请

US20080191410A1 Sheet discharge device 有权
标题翻译：排纸装置
公开(公告)号：US20080191410A1
公开(公告)日：2008-08-14
申请号：US12068148
申请日：2008-02-04
申请人： Masaaki Shinohara
发明人： Masaaki Shinohara
IPC分类号： B65H31/00
CPC分类号： B65H31/02 , B65H2301/51214 , B65H2405/1111 , B65H2405/1116 , B65H2405/11171 , B65H2511/13 , B65H2511/214 , B65H2220/01 , B65H2220/04 , B65H2220/02 , B65H2220/11
摘要： A sheet discharge device neatly and uniformly aligns edges of print sheets irrespective of the thickness of a print sheet, and exerts the same effect even at a low discharge speed. The sheet discharge device includes: sheet information sensing means for detecting thickness of a print sheet to judge the sheet as a thick sheet, a regular sheet, or a thin sheet; conveying means for discharging the print sheet bearing a printed image in a predetermined direction; a discharge tray that accommodates a stack of the print sheets discharged by the conveying means; wings arranged at a tail end portion of the conveying means, coming in contact with two side edges in a widthwise direction of the print sheet so as to give a U shape curl by curving the sheet in a rough U shape during discharge; control means for commanding, based on the judgment by the sheet information sensing means, the wing to take a predetermined shift mode during discharge of the print sheet; and drive means for moving the wing in a shift mode designated by the control means.
摘要翻译：片材排出装置整齐地均匀地排列打印片材的边缘，而与打印片材的厚度无关，甚至在低放电速度下也会发挥相同的效果。片材排出装置包括：片材信息检测装置，用于检测作为厚片材，普通片材或薄片材的片材的厚度; 输送装置，用于沿预定方向排出承载印刷图像的打印纸; 排出托盘，其容纳由所述输送装置排出的所述打印纸的堆叠; 布置在输送装置的尾端部分的翅片沿着打印纸的宽度方向与两个侧边缘接触，从而通过在排出期间使片材粗糙地弯曲而形成U形卷曲; 控制装置，用于根据纸张信息检测装置的判断命令翼在排版期间采取预定的移动模式; 以及用于以由控制装置指定的移动模式移动机翼的驱动装置。

25. 发明申请

US20080171291A1 Manufacturing method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20080171291A1
公开(公告)日：2008-07-17
申请号：US12003887
申请日：2008-01-03
申请人： Akira Imai , Masaaki Shinohara
发明人： Akira Imai , Masaaki Shinohara
IPC分类号： G03F7/20
CPC分类号： G03F1/70
摘要： A manufacturing method for a semiconductor device having patterns including two adjacent sides forming a corner portion with an external angle and a periodic pattern with a high density arrangement in the same layer is provided with (a) the step of exposing the first divided pattern including a first side which is obtained by dividing the pattern including two sides and the region which corresponds to a first thinned out pattern from which the periodic pattern is thinned out to light through a first mask having a first mask pattern, and (b) the step of exposing the second divided pattern including a second side which is obtained by dividing the pattern including two sides and the region which corresponds to a second thinned out pattern which is obtained by thinning out the periodic pattern to light through a first mask having a second mask pattern.
摘要翻译：具有图案的半导体器件的制造方法具有包括在相同层中形成具有外部角度的角部和具有高密度布置的周期性图案的两个相邻侧的图案，其具有（a）将包括第一分割图案的第一分割图案通过将具有第一掩模图案的第一掩模将包括两侧的图案和对应于周期性图案被稀疏的第一稀疏图案的区域分割成光，获得第一面，以及（b）曝光第二分割图案，其包括通过将包括两侧的图案和对应于通过将具有第二掩模图案的第一掩模通过将周期性图案细化成光而获得的第二细化图案的区域而获得的第二面。

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