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    • 22. 发明申请
    • Chamber isolation valve RF grounding
    • 室内隔离阀RF接地
    • US20070000608A1
    • 2007-01-04
    • US11174229
    • 2005-07-01
    • Ke LeeShinichi KuritaEmanuel Beer
    • Ke LeeShinichi KuritaEmanuel Beer
    • C23F1/00
    • F16K3/0227F16K51/02H01J37/32844H01J2237/166H01L21/67126Y02C20/30Y02P70/605Y10S277/919Y10S277/92Y10T137/8242
    • A method and apparatus for grounding a chamber isolation valve are provided. Generally, the method makes use of an electrically conductive elastomeric member or members to effectively ground a chamber isolation valve and/or isolation valve door while avoiding metal-to-metal contact between moving parts in the processing system. In one embodiment, the elastomeric member is attached to and in electrical communication with the door of the chamber isolation valve. The elastomeric member is brought into contact with a grounded component of the plasma processing system when the door is in the closed position. In another embodiment, the conductive elastomeric member is attached to a bracing member of the isolation valve and is brought into contact with a grounded component of the plasma processing system when the bracing member is deployed to hold the isolation valve door in place during substrate processing. Other configurations are also provided.
    • 提供了一种用于使室隔离阀接地的方法和装置。 通常,该方法利用导电弹性体构件来有效地将室隔离阀和/或隔离阀门接地,同时避免处理系统中移动部件之间的金属与金属的接触。 在一个实施例中,弹性体构件附接到腔室隔离阀的门并且与腔室隔离阀的门电连通。 当门处于关闭位置时,弹性体构件与等离子体处理系统的接地部件接触。 在另一个实施例中,当支撑构件展开以在衬底处理期间将隔离阀门保持在适当位置时,导电弹性构件附接到隔离阀的支撑构件并与等离子体处理系统的接地构件接触。 还提供其他配置。
    • 29. 发明申请
    • Electron beam test system stage
    • 电子束测试系统阶段
    • US20060038554A1
    • 2006-02-23
    • US11190320
    • 2005-07-27
    • Shinichi KuritaEmanuel BeerHung NguyenBenjamin JohnstonFayez Abboud
    • Shinichi KuritaEmanuel BeerHung NguyenBenjamin JohnstonFayez Abboud
    • G01R31/28
    • G01R31/305
    • A method and integrated system for electron beam testing a substrate is provided. In one aspect, the integrated system includes an electron beam testing chamber having a substrate table disposed therein. The substrate table is capable of moving a substrate within the testing chamber in both horizontal and vertical directions. The system also includes a load lock chamber disposed adjacent a first side of the testing chamber, and a prober storage assembly disposed beneath the testing chamber. A prober transfer assembly is disposed adjacent a second side of the testing chamber and arranged to transfer one or more probers between the prober storage assembly and the testing chamber. Further, one or more electron beam testing devices are disposed on an upper surface of the testing chamber.
    • 提供了一种用于电子束测试衬底的方法和集成系统。 一方面,集成系统包括电子束测试室,其具有设置在其中的衬底台。 衬底台能够在水平和垂直方向上移动测试室内的衬底。 该系统还包括邻近测试室的第一侧设置的负载锁定室,以及设置在测试室下方的探测器存储组件。 探测器传送组件设置在测试室的第二侧附近,并布置成在探测器存储组件和测试室之间传送一个或多个探测器。 此外,一个或多个电子束测试装置设置在测试室的上表面上。
    • 30. 发明申请
    • Apparatus and method of shaping profiles of large-area PECVD electrodes
    • 大面积PECVD电极成形轮廓的装置和方法
    • US20060005771A1
    • 2006-01-12
    • US11143506
    • 2005-06-02
    • John WhiteEmanuel BeerWei ChangRobin TinerSoo Choi
    • John WhiteEmanuel BeerWei ChangRobin TinerSoo Choi
    • C23C16/00C23F1/00
    • C23C16/4583H01J37/3244H01J2237/3325
    • An apparatus and method for shaping profiles of a large-area PECVD electrode is provided. A plasma-enhanced CVD chamber for processing a large-area substrate is first provided. The chamber includes a lower electrode that supports a large area substrate. The lower electrode is shaped to selectively conform the supported substrate in a selected orientation under operating conditions. The orientation may be either planar or nonplanar. The substrate complies with the shape of the electrode so the substrate is substantially parallel to an upper electrode in the chamber, and/or to a gas diffusion plate in the chamber. The lower electrode comprises a substrate support fabricated from a material of insufficient strength to support itself at operating temperatures and pressure in the chamber. The shape of the substrate support is adjusted by modifying the dimensions and/or planarity of a supporting base structure, and/or by appropriately varying the thickness of the substrate support.
    • 提供了一种用于形成大面积PECVD电极的轮廓的装置和方法。 首先提供用于处理大面积基板的等离子体增强CVD室。 该室包括支撑大面积基板的下电极。 下电极被成形为在操作条件下以选定的方向选择性地使受支撑的衬底符合。 取向可以是平面或非平面的。 基板符合电极的形状,因此基板基本上平行于腔室中的上部电极,和/或腔室中的气体扩散板。 下电极包括由强度不足的材料制成的衬底支撑件,以在腔室中的操作温度和压力下自身支撑。 通过改变支撑基底结构的尺寸和/或平面度和/或通过适当地改变基底支撑件的厚度来调节基底支撑件的形状。