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    • 23. 发明授权
    • Heat generating resistor, recording head using such resistor and drive
method therefor
    • 发热电阻,使用这种电阻的记录头及其驱动方法
    • US4719478A
    • 1988-01-12
    • US910727
    • 1986-09-23
    • Masayoshi TachiharaShinichi HirasawaMasami IkedaAkira AsaiHirokazu Komuro
    • Masayoshi TachiharaShinichi HirasawaMasami IkedaAkira AsaiHirokazu Komuro
    • B41J2/14G01D15/16
    • B41J2/14129B41J2/1412B41J2202/11
    • A planar heat generating resistor has a heat generating resistor layer formed on or above a support member and a pair of opposing electrodes formed on the heat generating resistor layer, such that a width of the heat generating layer at the electrode area is larger than a width of the electrodes and a voltage is applied across the electrodes, in which a ratio of a maximum value of a gradient of .phi., .sqroot.(.differential..phi./.differential.x).sup.2 +(.differential..phi./.differential.y).sup.2 to a value of .sqroot.(.differential..phi./.differential.x).sup.2 +(.differential..phi./.differential.y).sup.2 at a center of the resistor is no larger than 1.4 when a Laplace equation .differential..sup.2 /.differential.x.sup.2 +.differential..sup.2 .phi./.differential.y.sup.2 =0 is solved for the heat generating resistor when an orthogonal coordinate system X-Y is defined on the resistor surface, a potential at a point (x,y) on the resistor surface is represented by .phi.(x,y), a boundary value is imparted to an area of a circumferential boundary of the resistor which contacts to one of the electrodes, a different boundary value is imparted to an area which contacts to the other electrode, and a boundary condition in which a differential coefficient of .phi. to a normal direction of the circumferential boundary is zero is imparted to an area which does not contact to any of the electrodes.
    • 平面发热电阻器具有形成在支撑构件上或上方的发热电阻层和形成在发热电阻层上的一对相对电极,使得电极区域处的发热层的宽度大于宽度 的电极上施加电压,其中phi,2ROOT(DIFFERENTIAL phi / DIFFERENTIAL x)2(DIFFERENTIAL phi / DIFFERENTIAL y)2的梯度的最大值与2ROOT值的比值 当求解拉普拉斯方程差分2 /差分x2 +差分2比特/差分y2 = 0时,电阻中心处的差分phi /差分x)2+(差分phi /差分y)2不大于1.4 电阻器,当电阻表面上定义正交坐标系XY时,电阻表面上的点(x,y)处的电位由phi(x,y)表示,边界值被赋予圆周边界的区域 与电极之一接触的电阻器,赋予与另一个电极接触的区域不同的边界值,并且赋予与周向边界的法线方向的微分系数为零的边界条件 到不与任何电极接触的区域。
    • 24. 发明申请
    • Method of fabricating semiconductor device
    • 制造半导体器件的方法
    • US20110263124A1
    • 2011-10-27
    • US13067840
    • 2011-06-29
    • Shinichi HirasawaShinya Watanabe
    • Shinichi HirasawaShinya Watanabe
    • H01L21/28
    • H01L27/11521H01L29/40114H01L29/7881
    • A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into a plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers.
    • 根据一个实施例的制造半导体器件的方法包括:在半导体衬底之上形成多个Si基图案部分,所述多个Si基图案部分在基本上平行于半导体衬底的表面的方向上相邻的方向 绝缘膜; 在所述多个Si基图案部分和所述绝缘膜之上形成金属膜以与所述多个Si基图案部分接触; 通过多个Si基图案部分和金属膜之间的硅化反应将多个Si基图案部分的整个区域或上部处理成多个硅化物层; 以及通过对所述多个硅化物层进行平坦化处理来去除在所述绝缘膜上形成的所述多个硅化物层。