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21. 发明申请

US20100295087A1 Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US20100295087A1
公开(公告)日：2010-11-25
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/02 , H01L33/42 , H01L33/62
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

22. 发明授权

US07827347B2 Memory system, multi-bit flash memory device, and associated methods 有权
标题翻译：存储系统，多位闪存设备和相关方法
公开(公告)号：US07827347B2
公开(公告)日：2010-11-02
申请号：US12007216
申请日：2008-01-08
申请人： Seung-Jae Lee
发明人： Seung-Jae Lee
IPC分类号： G06F12/00
CPC分类号： G06F12/0246
摘要： A memory system includes a multi-bit flash memory device and a flash controller configured to control the multi-bit flash memory device. The flash controller is configured to output a series of commands, pointers, and addresses to the multi-bit flash memory device for read/program operations.
摘要翻译：存储器系统包括多位闪存器件和配置成控制多位闪存器件的闪存控制器。闪存控制器被配置为向多位闪存设备输出一系列命令，指针和地址以进行读/写操作。

23. 发明申请

US20100205439A1 METHOD AND TERMINAL FOR RECEIVING RIGHTS OBJECT FOR CONTENT ON BEHALF OF MEMORY CARD 有权
标题翻译：用于接收内存卡内容的权利对象的方法和终端
公开(公告)号：US20100205439A1
公开(公告)日：2010-08-12
申请号：US12696039
申请日：2010-01-28
申请人： Youn-Sung CHU , Seung-Jae Lee
发明人： Youn-Sung CHU , Seung-Jae Lee
IPC分类号： H04L9/32
CPC分类号： H04L9/3273 , H04L2209/603
摘要： Disclosed is a method of receiving by a terminal a rights object (RO) from a rights issuer (RI) on behalf of a memory card, the method including, receiving, by the terminal, a trigger message for RO acquisition from the rights issuing server, comparing, by the terminal, trust anchor and ID of the memory card in a list included in the trigger message with a trust anchor and ID of the memory card within a context of the terminal, transmitting, by the terminal, a RO request message to the rights issuing server if the trust anchor and the ID of the memory card within the context are consistent with those within the list according to the comparison result, and receiving, by the terminal, a RO response message including a protected RO from the rights issuing server.
摘要翻译：公开了一种由终端从代表存储卡的权利发行者（RI）接收权利对象（RO）的方法，所述方法包括：由终端从权限发布服务器接收用于RO获取的触发消息，通过所述终端将所述触发消息中包括的列表中的所述存储卡的信任锚和ID与所述终端的上下文中的信任锚和所述存储卡的ID进行比较，由所述终端向所述终端发送RO请求消息如果所述上下文中的所述信任锚和所述存储卡的ID根据所述比较结果与所述列表内的信任锚和所述ID相一致，并且由所述终端从所述终端接收包括受保护的RO的RO响应消息，发行服务器。

24. 发明申请

US20100191804A1 METHOD FOR SUPPORTING POST BROWSING IN MOVING RIGHTS OBJECT OF DIGITAL RIGHTS MANAGEMENT AND TERMINAL THEREOF 有权
标题翻译：移动权利支持浏览方法数字权限管理及其终端对象
公开(公告)号：US20100191804A1
公开(公告)日：2010-07-29
申请号：US12671454
申请日：2008-08-29
申请人： Seung-Jae Lee
发明人： Seung-Jae Lee
IPC分类号： G06F15/16
CPC分类号： G06F21/10 , G06F2221/0795
摘要： Disclosed is a digital rights management (DRM), and more particularly, a transfer of a rights object (RO) to a second user in consideration of requirements of a movement of a rights object of a first user (a terminal, an equipment), charge, etc., by providing a post browsing session when the rights object occupied by the first user is transferred to a second user via a server.
摘要翻译：公开了数字版权管理（DRM），更具体地说，考虑到第一用户（终端，设备）的权利对象的移动的要求，向第二用户转移权利对象（RO）通过在第一用户所占用的权利对象经由服务器传送给第二用户时，提供后浏览会话。

25. 发明申请

US20100164374A1 Organic light emitting material and organic light emitting device using the same 有权
标题翻译：有机发光材料和使用其的有机发光装置
公开(公告)号：US20100164374A1
公开(公告)日：2010-07-01
申请号：US12654602
申请日：2009-12-24
申请人： Jong-Kwan Bin , Soon-Wook Cha , Seung-Jae Lee , In-Bum Song , Jung-Keun Kim , Do-Han Kim , Chun-Gun Park , Nam-Sung Cho
发明人： Jong-Kwan Bin , Soon-Wook Cha , Seung-Jae Lee , In-Bum Song , Jung-Keun Kim , Do-Han Kim , Chun-Gun Park , Nam-Sung Cho
IPC分类号： H01J1/00 , C09B47/04 , C07C211/54
CPC分类号： C07C255/51 , C07C15/62 , C07C43/2055 , C07C43/225 , C07C255/54 , C07C2603/50 , C07F7/0805 , C07F7/081 , C09B23/148 , C09B57/001 , C09B57/008 , C09B57/10 , C09K11/06 , C09K2211/1011 , H01L51/0054 , H01L51/5016 , H05B33/14 , Y10S428/917
摘要： Disclosed is an organic light emitting material having the following chemical formula, for improving luminous efficiency, where R1, R2, R3 and R4 denote materials selected from an aromatic group with 6-24 carbon atoms (C6-C24), the group being independently substituted or unsubstituted, preferably, an aromatic group with 6-24 carbon atoms (C6-C24), the group consisting of trimethylsilane (TMS), CN, halogen (F, Cl, Br) alkyl groups with 1-4 carbon atoms (C1-C4).
摘要翻译：公开了具有以下化学式的有机发光材料，用于提高发光效率，其中R1，R2，R3和R4表示选自具有6-24个碳原子的芳族基团（C6-C24）的材料，该基团独立地被取代或未取代的，优选具有6-24个碳原子的芳基（C6-C24），由具有1-4个碳原子的三甲基硅烷（TMS），CN，卤素（F，Cl，Br）烷基组成的组（C1- C4）。

26. 发明授权

US07623377B2 Flash memory device having single page buffer structure and related programming operations 有权
标题翻译：具有单页缓冲结构和相关编程操作的闪存设备
公开(公告)号：US07623377B2
公开(公告)日：2009-11-24
申请号：US12255825
申请日：2008-10-22
申请人： Seung-Jae Lee , Jin-Sung Park
发明人： Seung-Jae Lee , Jin-Sung Park
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/12 , G11C16/24 , G11C16/3459 , G11C2211/5621 , G11C2216/14
摘要： A flash memory device is provided, and the flash memory device comprises memory cells, a sense node connected to a selected bit line, a load circuit connected to the sense node, and first and second sense and register circuits, each connected to the sense node. The first sense and register circuit is configured to store a first data value in accordance with the voltage level of the sense node during an initial read interval of a multi-bit program operation. The load circuit is configured to selectively pre-charge the sense node in accordance with the data value stored in the first sense and register circuit during a verify read interval of the multi-bit program operation. A multi-bit programming method for the flash memory device is also provided.
摘要翻译：提供闪速存储器件，并且闪速存储器件包括存储器单元，连接到所选位线的感测节点，连接到感测节点的负载电路以及连接到感测节点的第一和第二感测和寄存器电路。第一感测和寄存器电路被配置为在多位程序操作的初始读取间隔期间根据感测节点的电压电平来存储第一数据值。负载电路被配置为在多位程序操作的验证读取间隔期间根据存储在第一感测和寄存器电路中的数据值选择性地预充电感测节点。还提供了一种用于闪速存储器件的多位编程方法。

27. 发明申请

US20090181272A1 FUEL CELL PROVIDING IMPROVED STACK AND COOLING PLATE 失效
标题翻译：燃油箱提供改进的堆叠和冷却板
公开(公告)号：US20090181272A1
公开(公告)日：2009-07-16
申请号：US12166752
申请日：2008-07-02
申请人： Jae-young Shin , Seung-Jae Lee , Jie Peng
发明人： Jae-young Shin , Seung-Jae Lee , Jie Peng
IPC分类号： H01M8/04
CPC分类号： H01M8/0278 , H01M8/0267 , H01M8/0284 , H01M8/0286 , H01M8/241 , H01M8/2465
摘要： A fuel cell stack having an improved sealing structure of a cooling plate in which the cooling plates therein each have a coolant flow channel through which a coolant flows to remove heat from the fuel cell stack and a groove that surrounds the coolant flow channel, and a sealing member disposed in the groove to prevent coolant leakage. The sealing member has a compression rate of 18 to 30%, as the compression rate being ((a thickness of the sealing member—a height of the groove)/the thickness of the sealing member)×100. Such a fuel cell stack may maintain operation for a long time without the need of supplementing the coolant.
摘要翻译：一种具有改进的冷却板的密封结构的燃料电池堆，其中冷却板中的冷却板各自具有冷却剂流动通道，冷却剂流过冷却剂流动通道，以从燃料电池堆中除去热量以及围绕冷却剂流动通道的槽，以及密封构件设置在凹槽中以防止冷却剂泄漏。密封构件的压缩率为（（密封构件的厚度 - 槽的高度）/密封构件的厚度）×100的压缩率为18〜30％。这样的燃料电池堆可以长时间保持操作，而不需要补充冷却剂。

28. 发明授权

US07554062B2 Retractable display unit 失效
标题翻译：伸缩显示单元
公开(公告)号：US07554062B2
公开(公告)日：2009-06-30
申请号：US11281706
申请日：2005-11-18
申请人： Seung-Jae Lee
发明人： Seung-Jae Lee
IPC分类号： H05B1/02
CPC分类号： H05K5/0017 , B41J3/46
摘要： An electronic appliance is provided including a display unit movably installed along a guide rail, a protection cover which slides between a first position covering the display unit and a second position exposing the display unit, and a connection unit connecting the sliding movement of the protection cover between the first and second positions with the movement of the display unit.
摘要翻译：一种电子设备，包括：沿着导轨可移动地安装的显示单元，在覆盖显示单元的第一位置和暴露显示单元的第二位置之间滑动的保护盖;以及连接单元，其将保护盖的滑动运动在显示单元的移动之间的第一和第二位置之间。

29. 发明申请

US20090164710A1 SEMICONDUCTOR MEMORY SYSTEM AND ACCESS METHOD THEREOF 审中-公开
标题翻译：半导体存储器系统及其访问方法
公开(公告)号：US20090164710A1
公开(公告)日：2009-06-25
申请号：US12340846
申请日：2008-12-22
申请人： Jin-Hyeok Choi , Duck-Hyun Chang , Jun-Jin Kong , Dong-Hyuk Chae , Seung-Jae Lee , Dong-Ku Kang
发明人： Jin-Hyeok Choi , Duck-Hyun Chang , Jun-Jin Kong , Dong-Hyuk Chae , Seung-Jae Lee , Dong-Ku Kang
IPC分类号： G06F12/02 , G06F12/00
CPC分类号： G11C16/20 , G11C16/10
摘要： A semiconductor memory system and access method thereof. The semiconductor memory system includes a nonvolatile memory and a memory controller. The nonvolatile memory stores monitoring data in one or more of plural memory cells. The memory controller controls the nonvolatile memory. The memory controller detects the monitoring data and adjusts a bias voltage, which is provided to the plural memory cells, in accordance with a result of the detection.
摘要翻译：半导体存储器系统及其访问方法。半导体存储器系统包括非易失性存储器和存储器控制器。非易失性存储器将监视数据存储在多个存储单元中的一个或多个中。存储器控制器控制非易失性存储器。存储器控制器根据检测结果检测监视数据并调整提供给多个存储单元的偏置电压。

30. 发明申请

US20080209266A1 Memory device, memory system including the same, and method thereof 有权
标题翻译：存储器件，包括其的存储器系统及其方法
公开(公告)号：US20080209266A1
公开(公告)日：2008-08-28
申请号：US12071096
申请日：2008-02-15
申请人： Seung-Jae Lee , Young-Ho Lim
发明人： Seung-Jae Lee , Young-Ho Lim
IPC分类号： G06F11/14
CPC分类号： G06F11/141 , G11C16/10 , G11C2216/14
摘要： A memory device may include a memory cell array, a page buffer circuit, and/or a control logic. The page buffer circuit may include first and second registers and be configured to store data to be programmed in the memory cell array. The control logic may be configured to control the page buffer circuit to reload data stored in the first register into the second register in response to a reload command input if a program operation fails.
摘要翻译：存储器件可以包括存储单元阵列，页缓冲器电路和/或控制逻辑。页面缓冲器电路可以包括第一和第二寄存器，并且被配置为存储要被编程在存储单元阵列中的数据。控制逻辑可以被配置为如果程序操作失败，则响应于重新加载命令输入来控制页缓冲器电路将存储在第一寄存器中的数据重新加载到第二寄存器中。

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