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21. 发明申请

US20100148143A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储元件，其制造方法和非易失性存储器元件的非线性半导体器件
公开(公告)号：US20100148143A1
公开(公告)日：2010-06-17
申请号：US12600793
申请日：2008-05-16
申请人： Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Satoru Fujii , Yoshihiko Kanzawa , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L45/00 , H01L21/16
CPC分类号： H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/145 , H01L45/1625
摘要： A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.
摘要翻译：本发明的非易失性半导体装置包括：（103），设置在第一电极（103）和第二电极（105）之间的第二电极（105）和电阻变化层（104），电阻值可变层可响应施加在电极（103），（105）之间的电信号而可逆地切换，其中电阻变化层（104）包括含有钽和氮的氧化物。

22. 发明申请

US20090321709A1 MEMORY ELEMENT, MEMORY APPARATUS, AND SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：存储元件，存储器和半导体集成电路
公开(公告)号：US20090321709A1
公开(公告)日：2009-12-31
申请号：US12376256
申请日：2007-08-17
申请人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
发明人： Shunsaku Muraoka , Satoru Fujii , Satoru Mitani , Koichi Osano
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , G11C2213/32 , G11C2213/55 , G11C2213/79 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1625 , H01L45/1683
摘要： A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.
摘要翻译：存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。

23. 发明授权

US07035629B2 User interface control method and system for a mobile terminal 有权
标题翻译：移动终端的用户界面控制方法和系统
公开(公告)号：US07035629B2
公开(公告)日：2006-04-25
申请号：US10292761
申请日：2002-11-13
申请人： Satoru Fujii
发明人： Satoru Fujii
IPC分类号： H04H3/00
CPC分类号： H04M1/72519 , G06F3/0489 , H04W88/02
摘要： A mobile telephone and an external user interface processing device are connected to a communication network. The external user interface processing device stores a plurality of user interface programs. The mobile telephone transmits key operation event information to the external user interface processing device. The external user interface processing device executes a user interface program to produce a processing result of the key operation event information. The mobile telephone receives the processing result and controls the display according to the received processing result.
摘要翻译：移动电话和外部用户接口处理设备连接到通信网络。外部用户界面处理装置存储多个用户界面程序。移动电话将键操作事件信息发送到外部用户界面处理装置。外部用户界面处理装置执行用户界面程序以产生键操作事件信息的处理结果。移动电话接收处理结果并根据接收到的处理结果控制显示。

24. 发明授权

US5533629A Vortex pneumatic classifier 失效
标题翻译：涡流式气动分选机
公开(公告)号：US5533629A
公开(公告)日：1996-07-09
申请号：US313263
申请日：1994-09-03
申请人： Mitsuhiro Ito , Takamiki Tamashige , Satoru Fujii
发明人： Mitsuhiro Ito , Takamiki Tamashige , Satoru Fujii
IPC分类号： B07B7/083 , B04B5/12
CPC分类号： B07B7/083
摘要： Precise classifying of granular or powdered raw material at the desired classifying point by means of a vortex pneumatic classifier comprising: a rotor, a plurality of vortex flow adjusting vanes provided on the said rotor, a classifying chamber defined around the said vortex flow adjusting vanes, and guide vanes radially opposing the said vortex flow adjusting vanes across the said classifying chamber, wherein the mounting pitch P of the said vortex flow adjusting vanes is determined in relation to the classifying particle diameter Dp(th) so as to meet the condition of the following relation expressionP.ltoreq.1.04.times.Dp(th).sup.0.365.
摘要翻译： PCT No.PCT / JP94 / 00502 Sec。 371日期1994年9月30日 102（e）1994年9月30日PCT 1994年3月29日PCT公布。第WO94 / 22599号公报日期：1994年10月13日。通过涡流气动分选机在期望的分级点精确地分级粒状或粉末状原料，包括：转子，设置在所述转子上的多个涡流流量调节叶片，围绕所述涡流流量调节叶片和与所述涡流流量调节叶片径向相对的所述分流室的引导叶片，其中所述涡流流量调节叶片的安装间距P相对于分级粒径Dp（th）确定以满足以下关系表达式P <= 1.04×Dp（th）0.365的条件。

25. 发明授权

US5366760A Conductive ink composition and method of forming a conductive thick film pattern 失效
标题翻译：导电油墨组合物和形成导电厚膜图案的方法
公开(公告)号：US5366760A
公开(公告)日：1994-11-22
申请号：US950596
申请日：1992-09-25
申请人： Satoru Fujii , Hirotoshi Watanabe
发明人： Satoru Fujii , Hirotoshi Watanabe
IPC分类号： C09D11/00 , H01B1/22 , H05K1/09 , B05D1/00
CPC分类号： H05K1/092 , C09D11/52 , H01B1/22
摘要： A method of forming a conductive thick film pattern comprises the steps of filling grooves of an intaglio with a conductive ink, transferring the conductive ink in the grooves onto a blanket of which surface is coated with an elastic material, transferring and printing a conductive thick film pattern transferred on the blanket onto a substrate, firing the conductive pattern to scatter the organic matter, and sintering the conductive pattern. A conductive ink comprises conductive metal powder, glass frit, transition metal oxide, dispersing agent, and vehicle containing an organic binder comprising at least one of poly-iso-butyl methacrylate, poly-iso-propyl methacrylate, polymethyl methacrylate, poly-4-fluoroethylene, and poly-.alpha.-methyl styrene.
摘要翻译：形成导电厚膜图案的方法包括以下步骤：用导电油墨填充凹版的凹槽，将凹槽中的导电油墨转移到其表面涂覆有弹性材料的毯子上，转印和印刷导电厚膜在衬垫上转印到衬底上，烧制导电图案以散射有机物质，并烧结导电图案。导电油墨包括导电金属粉末，玻璃料，过渡金属氧化物，分散剂和载体，其含有有机粘合剂，该有机粘合剂包含甲基丙烯酸异丁酯，甲基丙烯酸异丙酯，聚甲基丙烯酸甲酯，聚甲基丙烯酸甲酯，氟乙烯和聚-α-甲基苯乙烯。

26. 发明授权

US4553416A Dry type continuous wire drawing process 失效
标题翻译：干式连续拉丝工艺
公开(公告)号：US4553416A
公开(公告)日：1985-11-19
申请号：US505843
申请日：1983-06-20
申请人： Chuzoh Sudoh , Hyoji Hagita , Satoru Fujii
发明人： Chuzoh Sudoh , Hyoji Hagita , Satoru Fujii
IPC分类号： B21C1/00 , B21C9/00 , B21C9/02 , B21C43/04 , C10M111/00 , C10M111/02 , C10M111/04 , C23C22/22 , C23C22/73 , C23C22/83
CPC分类号： B21C43/04 , B21C1/006 , B21C9/00 , B21C9/02 , C10M111/00 , C10M111/02 , C10M111/04 , C23C22/22 , C23C22/73 , C23C22/83 , C10M2201/0603 , C10M2201/0613 , C10M2201/0623 , C10M2201/063 , C10M2201/0653 , C10M2201/0663 , C10M2201/0803 , C10M2201/085 , C10M2201/0853 , C10M2201/0863 , C10M2201/0873 , C10M2201/1006 , C10M2201/1023 , C10M2201/1033 , C10M2201/1053 , C10M2201/123 , C10M2205/022 , C10M2205/0225 , C10M2205/024 , C10M2205/04 , C10M2205/06 , C10M2205/14 , C10M2207/1203 , C10M2207/1213 , C10M2207/125 , C10M2207/1253 , C10M2207/129 , C10M2207/16 , C10M2207/163 , C10M2207/183 , C10M2207/20 , C10M2207/203 , C10M2207/243 , C10M2209/00 , C10M2209/02 , C10M2209/04 , C10M2209/06 , C10M2209/062 , C10M2209/084 , C10M2209/10 , C10M2211/06 , C10M2213/00 , C10M2213/02 , C10M2213/023 , C10M2213/043 , C10M2213/0606 , C10M2213/062 , C10M2213/0623 , C10M2217/024 , C10M2217/026 , C10M2217/0403 , C10M2217/0415 , C10M2217/042 , C10M2217/0425 , C10M2217/043 , C10M2217/0435 , C10M2217/044 , C10M2217/0443 , C10M2217/045 , C10M2217/0453 , C10M2217/0465 , C10M2217/06 , C10M2229/02 , C10M2229/05 , C10N2210/00 , C10N2210/01 , C10N2210/02 , C10N2210/03 , C10N2240/402 , C10N2240/403 , C10N2240/404 , C10N2240/405 , C10N2240/406 , C10N2240/407 , C10N2240/408 , C10N2240/409 , C10N2270/00 , C10N2280/00
摘要： Herein disclosed is a dry type continuous wire drawing process which can retain satisfactory working circumstances while eliminating the problem of disposal of waste liquids. The wire drawing process includes the steps of descaling a wire to be drawn, coating the descaled wire with a lubricant, and drawing the lubricant-coated wire through a drawing die. The descaling step is conducted in a mechanical manner. At the lubricant coating step, the descaled wire is once coated with lime powder and then with metallic soap powder. Thus. the three steps recited are conducted under dry and continuous conditions. At the lubricant coating step, the lime-coated wire may be coated with powder of sodium stearate before it is coated with the metallic soap.
摘要翻译：本文公开了一种干式连续拉丝工艺，其可以在消除废液处理的问题的同时保持令人满意的工作环境。拉丝工艺包括以下步骤：将待拉制的丝除锈，用润滑剂涂覆除锈丝，以及通过拉丝模拉出润滑剂涂覆的丝。除垢步骤以机械方式进行。在润滑剂涂布步骤中，除锈丝一次用石灰粉末涂覆，然后用金属皂粉末涂覆。从而。叙述的三个步骤在干燥和连续的条件下进行。在润滑剂涂覆步骤中，石灰涂层的丝线可以在用金属皂涂覆之前用硬脂酸钠的粉末涂覆。

27. 发明授权

US08445886B2 Nonvolatile memory element, nonvolatile memory device, nonvolatile semiconductor device, and method of manufacturing nonvolatile memory element 有权
标题翻译：非易失性存储元件，非易失性存储器件，非易失性半导体器件以及制造非易失性存储元件的方法
公开(公告)号：US08445886B2
公开(公告)日：2013-05-21
申请号：US13147321
申请日：2010-02-02
申请人： Satoru Fujii , Koji Arita , Satoru Mitani , Takumi Mikawa
发明人： Satoru Fujii , Koji Arita , Satoru Mitani , Takumi Mikawa
IPC分类号： H01L29/02
CPC分类号： H01L45/146 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1273
摘要： A nonvolatile memory element comprises a first electrode (103); a second electrode (105); and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the electrodes (103, 105); the resistance variable layer (104) including a first tantalum oxide layer (107) comprising a first tantalum oxide and a second tantalum oxide layer (108) comprising a second tantalum oxide which is different in oxygen content from the first tantalum oxide, the first tantalum oxide layer and the second tantalum oxide layer being stacked together, and being configured such that 0
摘要翻译：非易失性存储元件包括第一电极（103）; 第二电极（105）; 以及设置在所述第一电极（103）和所述第二电极（105）之间的电阻变化层（104），所述电阻变化层的电阻值响应于施加在所述电极（103,105）之间的电信号而可逆地变化; 电阻变化层（104）包括包含第一钽氧化物的第一钽氧化物层（107）和包含与第一钽氧化物不同氧含量的第二氧化钽的第二钽氧化物层（108），第一钽氧化物层和第二钽氧化物层堆叠在一起，并且被配置为当第一钽氧化物表示为TaO x时满足0

28. 发明授权

US08445319B2 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory element 有权
标题翻译：非易失性存储元件及其制造方法以及使用非易失性存储元件的非易失性半导体装置
公开(公告)号：US08445319B2
公开(公告)日：2013-05-21
申请号：US13205408
申请日：2011-08-08
申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
发明人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhiko Shimakawa
IPC分类号： H01L47/00
CPC分类号： H01L27/101 , G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0073 , G11C2213/32 , G11C2213/71 , G11C2213/72 , G11C2213/79 , H01L27/2409 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675 , Y10S438/90
摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
摘要翻译：非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽，由TaOx（0

29. 发明申请

US20120295413A1 METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY ELEMENT AND METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：制造非易失性半导体存储器元件的方法和制造非易失性半导体存储器件的方法
公开(公告)号：US20120295413A1
公开(公告)日：2012-11-22
申请号：US13574254
申请日：2010-12-28
申请人： Satoru Fujii , Takumi Mikawa
发明人： Satoru Fujii , Takumi Mikawa
IPC分类号： H01L21/02
CPC分类号： H01L27/2463 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625
摘要： A method of manufacturing a non-volatile semiconductor memory element including a variable resistance element and a non-ohmic element. The variable resistance element includes a first electrode, a variable resistance layer, and a shared electrode. The non-ohmic element includes the shared electrode, a semiconductor or insulator layer, and a second electrode. The method includes: forming the first electrode on a substrate; forming the variable resistance layer on the first electrode; forming the shared electrode by nitriding a front surface of the variable resistance layer; forming the semiconductor or insulator layer on the shared electrode; and forming the second electrode. In the forming of the shared electrode, a front surface of a transition metal oxide is nitrided by a plasma nitriding process to form the shared electrode comprising a transition metal nitride.
摘要翻译：一种制造包括可变电阻元件和非欧姆元件的非易失性半导体存储元件的方法。可变电阻元件包括第一电极，可变电阻层和共用电极。非欧姆元件包括共用电极，半导体或绝缘体层和第二电极。该方法包括：在基板上形成第一电极; 在所述第一电极上形成所述可变电阻层; 通过对可变电阻层的前表面进行氮化而形成共用电极; 在共用电极上形成半导体层或绝缘体层; 并形成第二电极。在共用电极的形成中，通过等离子体氮化处理使过渡金属氧化物的前表面氮化，形成包含过渡金属氮化物的共用电极。

30. 发明申请

US20110284816A1 NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, NONVOLATILE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING NONVOLATILE MEMORY ELEMENT 有权
标题翻译：非易失性存储器元件，非易失性存储器件，非易失性半导体器件以及制造非易失性存储器元件的方法
公开(公告)号：US20110284816A1
公开(公告)日：2011-11-24
申请号：US13147321
申请日：2010-02-02
申请人： Satoru Fujii , Koji Arita , Satoru Mitani , Takumi Mikawa
发明人： Satoru Fujii , Koji Arita , Satoru Mitani , Takumi Mikawa
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2418 , H01L27/2436 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/1273
摘要： A nonvolatile memory element comprises a first electrode (103); a second electrode (105); and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), resistance values of the resistance variable layer reversibly changing in response to electric signals applied between the electrodes (103, 105); the resistance variable layer (104) including a first tantalum oxide layer (107) comprising a first tantalum oxide and a second tantalum oxide layer (108) comprising a second tantalum oxide which is different in oxygen content from the first tantalum oxide, the first tantalum oxide layer and the second tantalum oxide layer being stacked together, and being configured such that 0
摘要翻译：非易失性存储元件包括第一电极（103）; 第二电极（105）; 以及设置在所述第一电极（103）和所述第二电极（105）之间的电阻变化层（104），所述电阻变化层的电阻值响应于施加在所述电极（103,105）之间的电信号而可逆地变化; 电阻变化层（104）包括包含第一钽氧化物的第一钽氧化物层（107）和包含与第一钽氧化物不同氧含量的第二氧化钽的第二钽氧化物层（108），第一钽氧化物层和第二钽氧化物层堆叠在一起，并且被配置为当第一钽氧化物表示为TaO x并且x

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