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21. 发明申请

US20110044088A1 VARIABLE RESISTANCE NONVOLATILE STORAGE DEVICE AND METHOD OF FORMING MEMORY CELL 有权
标题翻译：可变电阻非易失性存储器件及形成存储器单元的方法
公开(公告)号：US20110044088A1
公开(公告)日：2011-02-24
申请号：US12743472
申请日：2009-08-20
申请人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
发明人： Shunsaku Muraoka , Yoshihiko Kanzawa , Satoru Mitani , Koji Katayama , Kazuhiko Shimakawa , Satoru Fujii , Takeshi Takagi
IPC分类号： G11C11/34 , H01L27/105 , H01L21/02
CPC分类号： H01L45/147 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/32 , G11C2213/34 , G11C2213/79 , H01L27/2436 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： A variable resistance nonvolatile storage device which includes (i) a semiconductor substrate (301), (ii) a variable resistance element (309) having: lower and upper electrodes (309a, 309c); and a variable resistance layer (309b) whose resistance value reversibly varies based on voltage signals each of which has a different polarity and is applied between the electrodes (309a, 309c), and (iii) a MOS transistor (317) formed on the substrate (301), wherein the variable resistance layer (309b) includes: oxygen-deficient transition metal oxide layers (309b-1, 309b-2) having compositions MOx and MOy (where x
摘要翻译：一种可变电阻非易失性存储装置，包括：（i）半导体衬底（301），（ii）具有下电极和上电极（309a，309c）的可变电阻元件（309）和可变电阻层（309b），其电阻值基于各自具有不同极性的电压信号而被可逆地变化并施加在电极（309a，309c）之间，以及（iii）形成在基板上的MOS晶体管（301），其中所述可变电阻层（309b）包括：具有组成MOx和MOy（其中x

22. 发明申请

US20100172171A1 RESISTANCE VARIABLE MEMORY APPARATUS 有权
标题翻译：电阻可变存储器
公开(公告)号：US20100172171A1
公开(公告)日：2010-07-08
申请号：US12602414
申请日：2008-05-15
申请人： Ryotaro Azuma , Kazuhiko Shimakawa , Satoru Fujii
发明人： Ryotaro Azuma , Kazuhiko Shimakawa , Satoru Fujii
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/003 , G11C13/004 , G11C13/0069 , G11C2013/009 , G11C2213/76 , H01L27/101 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A resistance variable memory apparatus (100) of the present invention includes a current suppressing element (116) which is connected in series with each resistance variable layer (114) and whose threshold voltage is VF, and is configured to apply a first voltage V1 to a first wire (WL) associated with a selected nonvolatile memory element, apply a second voltage V2 to a second wire (BL) associated with the selected nonvolatile memory element, apply a third voltage V3 to a first wire (WL) which is not associated with the selected nonvolatile memory element and apply a fourth voltage V4 to a second wire (BL) which is not associated with the selected memory element when writing data or reading data, wherein V2≦V3
摘要翻译：本发明的电阻可变存储装置（100）具有与各个电阻变化层（114）串联连接且阈值电压为VF的电流抑制元件（116），并且将第一电压V1 与所选择的非易失性存储器元件相关联的第一线（WL）将第二电压V2施加到与所选择的非易失性存储器元件相关联的第二线（BL），将第三电压V3施加到不相关联的第一线（WL）使用所选择的非易失性存储元件，并且在写入数据或读取数据时将第四电压V4施加到与所选择的存储器元件不相关联的第二电线（BL），其中V2＆nlE; V3

23. 发明申请

US20090250678A1 NONVOLATILE MEMORY APPARATUS, NONVOLATILE MEMORY ELEMENT, AND NONVOLATILE ELEMENT ARRAY 有权
标题翻译：非易失性存储设备，非易失性存储元件和非易失性元件阵列
公开(公告)号：US20090250678A1
公开(公告)日：2009-10-08
申请号：US12302468
申请日：2008-03-27
申请人： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
发明人： Koichi Osano , Satoru Fujii , Shunsaku Muraoka
IPC分类号： H01L47/00 , H01L29/12
CPC分类号： G11C13/003 , G11C13/0007 , G11C2213/32 , G11C2213/74 , G11C2213/76 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , Y10S257/904 , Y10S257/924
摘要： A nonvolatile memory apparatus comprises a first electrode (111), a second electrode (112), a variable resistance layer (113) which is disposed between the electrodes, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes, a first terminal (103) connected to the first electrode, and a second terminal (104) connected to the second terminal. The variable resistance layer comprises at least a tantalum oxide, and is configured to satisfy 0
摘要翻译：非易失性存储装置包括第一电极（111），第二电极（112），设置在电极之间的可变电阻层（113），可变电阻层的电阻值在多个电阻状态之间可逆地变化在施加在电极之间的电信号上，连接到第一电极的第一端子（103）和连接到第二电极的第二端子（104）。可变电阻层至少包含氧化钽，并且当钽氧化物由TaOx表示时，其被配置为满足0

24. 发明申请

US20050127795A1 Piezoelectric element, fabrication method for the same, and inkjet head, inkjet recording apparatus and angular velocity sensor including the same 有权
标题翻译：压电元件，其制造方法以及喷墨头，喷墨记录装置和包括该压电元件的角速度传感器
公开(公告)号：US20050127795A1
公开(公告)日：2005-06-16
申请号：US10894474
申请日：2004-07-19
申请人： Hideo Torii , Eiji Fujii , Takeshi Kamada , Satoru Fujii
发明人： Hideo Torii , Eiji Fujii , Takeshi Kamada , Satoru Fujii
IPC分类号： B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , G01C19/56 , G01C19/5628 , H01L29/84 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/316 , H01L41/319 , H01L41/39 , H02N2/00
CPC分类号： C04B35/472 , B41J2/14233 , C04B2235/3206 , C04B2235/3213 , C04B2235/3227 , C04B2235/3262 , C04B2235/787 , G01C19/5621 , G01C19/5628 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/1876 , H01L41/316
摘要： A piezoelectric element includes a first electrode; a piezoelectric layered film composed of a first piezoelectric film formed on the first electrode film and a second piezoelectric film that is formed on the first piezoelectric film and is controlled in crystal orientation thereof by the first piezoelectric film; and a second electrode film formed on the second piezoelectric film. Each of the first and second piezoelectric films is an aggregate of columnar grains grown unidirectionally along a thickness direction of the piezoelectric layered film. A columnar grain of the second piezoelectric film has a larger cross-sectional diameter than a columnar grain of the first piezoelectric film. A ratio l/d of the thickness l of the piezoelectric layered film to the cross-sectional diameter d of the second piezoelectric film is not less than 20 and not more than 60.
摘要翻译：压电元件包括第一电极; 压电层叠膜，由形成在第一电极膜上的第一压电膜和形成在第一压电膜上的第一压电膜组成，并由第一压电膜控制晶体取向; 以及形成在第二压电膜上的第二电极膜。第一和第二压电膜中的每一个是沿着压电层叠膜的厚度方向单向生长的柱状颗粒的集合体。第二压电膜的柱状晶粒的截面直径比第一压电膜的柱状晶粒大。压电体层叠膜的厚度l与第二压电体膜的截面直径d的比l / d为20以上60以下。

25. 发明申请

US20050087689A1 Pyroelectric device, method for manufacturing same and infrared sensor 审中-公开
标题翻译：热电装置，制造方法和红外传感器
公开(公告)号：US20050087689A1
公开(公告)日：2005-04-28
申请号：US10503328
申请日：2003-12-04
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
IPC分类号： G01J5/34 , H01L37/02 , G01J5/00
CPC分类号： G01J5/34 , H01L37/025
摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0
摘要翻译：由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4））O 3（0

26. 发明授权

US5868948A Method for fabricating dielectric device 失效
标题翻译：电介质器件制造方法
公开(公告)号：US5868948A
公开(公告)日：1999-02-09
申请号：US724654
申请日：1996-10-01
申请人： Satoru Fujii , Ryoichi Takayama , Takeshi Kamada , Atsushi Tomozawa
发明人： Satoru Fujii , Ryoichi Takayama , Takeshi Kamada , Atsushi Tomozawa
IPC分类号： H01G4/12 , H01L37/02 , B44C1/22
CPC分类号： H01G4/12 , H01L37/02
摘要： A method for fabricating a dielectric device including a capacitor, a pyroelectric infrared detector, and the like is disclosed. The method comprises the steps of etching a dielectric substance film formed on a substrate to form a predetermined pattern with an etchant comprised of hydrofluoric acid and an oxidizing agent, and removing residues resulting from the etching by treating the etched layer with a first treating solution containing a reducing agent and subsequently with a second treating solution containing an acid.
摘要翻译：公开了一种用于制造包括电容器，热电型红外线检测器等的电介质器件的方法。该方法包括以下步骤：利用由氢氟酸和氧化剂组成的蚀刻剂来蚀刻形成在基板上的电介质膜以形成预定图案，并且用含有第一处理溶液的蚀刻层处理蚀刻层去除残留物还原剂，随后用含有酸的第二处理溶液。

27. 发明授权

US5663089A Method for producing a laminated thin film capacitor 失效
标题翻译：叠层薄膜电容器的制造方法
公开(公告)号：US5663089A
公开(公告)日：1997-09-02
申请号：US465350
申请日：1995-06-05
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01L21/70
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

28. 发明授权

US5174925A Conductive ink composition and method of forming a conductive thick film pattern 失效
标题翻译：导电墨水组合物和形成导电厚膜图案的方法
公开(公告)号：US5174925A
公开(公告)日：1992-12-29
申请号：US683183
申请日：1991-04-11
申请人： Satoru Fujii , Hirotoshi Watanabe
发明人： Satoru Fujii , Hirotoshi Watanabe
IPC分类号： C09D11/00 , H01B1/22 , H05K1/09
CPC分类号： H05K1/092 , C09D11/52 , H01B1/22
摘要： A method of forming a conductive thick film pattern comprises the steps of filling grooves of an intaglio with a conductive ink, transferring the conductive ink in the grooves onto a blanket of which surface is coated with an elastic material, transferring and printing a conductive thick film pattern transferred on the blanket onto a substrate, firing the conductive pattern to scatter the organic matter, and sintering the conductive pattern. A conductive ink comprises conductive metal powder, glass frit, transition metal oxide, dispersing agent, the vehicle containing an organic binder comprising at least one of poly-iso-butyl methacrylate, poly-iso-propyl methacrylate, polymethyl methacrylate, poly-4-fluoroethylene, and poly.alpha.-methyl styrene.

29. 发明授权

US5131043A Method of and apparatus for speech recognition wherein decisions are made based on phonemes 失效
标题翻译：用于语音识别的方法和装置，其中基于音素进行决定
公开(公告)号：US5131043A
公开(公告)日：1992-07-14
申请号：US441225
申请日：1989-11-20
申请人： Satoru Fujii , Katsuyuki Niyada
发明人： Satoru Fujii , Katsuyuki Niyada
IPC分类号： G10L15/00
CPC分类号： G10L15/10
摘要： Linear prediction coefficients of a speech signal including unknown words are derived for each of successive periodic frame intervals. For every frame over the duration of an individual phoneme of the speech signal, the degree of similarity of stored coefficients of known words and derived coefficients of the unknown words are calculated so that at the end of the individual phonemes, the degree of similarity is calculated. Phoneme segmentation data are derived in response to the speech signal and combined with the calculated degree of similarity over the individual phoneme to derive phoneme strings of the speech signal. The derived and stored phoneme strings are compared to indicate the words stored in a word dictionary having the greatest similarity with the derived phoneme strings.
摘要翻译：对于每个连续的周期性帧间隔导出包括未知字的语音信号的线性预测系数。对于在语音信号的单个音素的持续时间内的每个帧，计算已知单词的存储系数和未知单词的导出系数的相似度，使得在单个音素的末尾，计算相似度。音素分割数据是响应于语音信号导出的，并且与计算的各个音素上的相似程度相结合以导出语音信号的音素串。将导出和存储的音素字符串进行比较，以指示与导出的音素串具有最大相似性的词典中存储的词。

30. 发明申请

US20120292588A1 NONVOLATILE MEMORY DEVICE 审中-公开
标题翻译：非易失性存储器件
公开(公告)号：US20120292588A1
公开(公告)日：2012-11-22
申请号：US13503770
申请日：2011-12-15
申请人： Satoru Fujii , Haruyuki Sorada , Takumi Mikawa
发明人： Satoru Fujii , Haruyuki Sorada , Takumi Mikawa
IPC分类号： H01L47/00
CPC分类号： H01L45/145 , H01L27/2418 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/1625 , H01L45/1683
摘要： A nonvolatile memory device including: a strip-shaped first electrode line (151); a third interlayer insulating layer (16); a variable resistance layer having a stacked structure including a first variable resistance layer (18a) comprising an oxygen-deficient transition metal oxide and formed in a memory cell hole (29) to cover a bottom and a side face, and a second variable resistance layer (18b) comprising an oxygen- and/or nitrogen-deficient transition metal oxynitride having a different oxygen content than the first variable resistance layer; a first electrode (19) formed in the memory cell hole; and a strip-shaped first line (22) formed in a direction crossing the first electrode line (151) to cover at least an opening of the memory cell hole, and z>(x+y) is satisfied when the transition metal is represented by M and compositions of the first and the second variable resistance layers by MOz and MOxNy, respectively.
摘要翻译：一种非易失性存储器件，包括：带状第一电极线（151）; 第三层间绝缘层（16）; 具有堆叠结构的可变电阻层，包括由缺氧过渡金属氧化物构成的第一可变电阻层（18a），形成在存储单元孔（29）中以覆盖底部和侧面;以及第二可变电阻层（18b），其包含氧含量低于所述第一可变电阻层的氧和/或氮缺乏的过渡金属氮氧化物; 形成在所述存储单元孔中的第一电极（19）以及沿着与第一电极线（151）交叉的方向形成的带状第一线（22），以覆盖存储单元孔的至少一个开口，并且当表示过渡金属时，满足z>（x + y）分别由M和第一和第二可变电阻层的组成分别由MOz和MOxNy组成。

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